페이지 34 - 트랜지스터 - 양극(BJT) - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - 양극(BJT) - 어레이

기록 2,013
페이지  34/72
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC846PNE6327BTSA1
Infineon Technologies

TRANS NPN/PNP 65V 0.1A SOT363-6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고3,056
100mA
65V
650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BC856BS/DG/B3X
Nexperia USA Inc.

TRANS GEN PURPOSE SC-88

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,128
-
-
-
-
-
-
-
-
-
-
-
hot ZDT1147TA
Diodes Incorporated

TRANS 2PNP 12V 5A SOT223

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 380mV @ 50mA, 5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
  • Power - Max: 2.75W
  • Frequency - Transition: 115MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: TO-261-4, TO-261AA
재고129,000
5A
12V
380mV @ 50mA, 5A
100nA
250 @ 500mA, 2V
2.75W
115MHz
-
Surface Mount
TO-261-4, TO-261AA
SOT-223
XP0653400L
Panasonic Electronic Components

TRANS 2NPN 20V 0.015A SMINI6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 15mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 650MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SMINI6-G1
패키지: 6-TSSOP, SC-88, SOT-363
재고2,864
15mA
20V
-
-
40 @ 1mA, 6V
150mW
650MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SMINI6-G1
EMZ1DXV6T1G
ON Semiconductor

TRANS NPN/PNP 60V 0.1A SOT563

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 500mW
  • Frequency - Transition: 180MHz, 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고6,256
100mA
60V
400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
500nA (ICBO)
120 @ 1mA, 6V
500mW
180MHz, 140MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot ZDT6705TA
Diodes Incorporated

TRANS NPN/PNP DARL 120V 1A SM8

  • Transistor Type: NPN, PNP Darlington (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
  • Power - Max: 2.75W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8
패키지: SOT-223-8
재고53,376
1A
120V
1.5V @ 1mA, 1A
10µA
2000 @ 1A, 5V
2.75W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SM8
SMBT3906UE6327HTSA1
Infineon Technologies

TRANS 2PNP 40V 0.2A SC74-6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: PG-SC74-6
패키지: SC-74, SOT-457
재고6,432
200mA
40V
400mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
330mW
250MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
PG-SC74-6
hot ZHB6718TA
Diodes Incorporated

TRANS 2NPN/2PNP 20V 2.5A SOT223

  • Transistor Type: 2 NPN, 2 PNP (H-Bridge)
  • Current - Collector (Ic) (Max): 2.5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SOT-223
패키지: SOT-223-8
재고546,480
2.5A
20V
200mV @ 50mA, 2.5A
100µA
200 @ 2A, 2V
1.25W
140MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SOT-223
hot NST3904DXV6T5G
ON Semiconductor

TRANS 2NPN 40V 0.2A SOT563

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고941,640
200mA
40V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
500mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
PBSS4230PAN,115
Nexperia USA Inc.

TRANS 30V 2A 6HUSON

  • Transistor Type: -
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
패키지: 6-UDFN Exposed Pad
재고4,640
2A
30V
290mV @ 200mA, 2A
100nA (ICBO)
200 @ 1A, 2V
510mW
120MHz
150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
DST3906DJ-7
Diodes Incorporated

TRANS 2PNP 40V 0.2A SOT963

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
패키지: SOT-963
재고3,600
200mA
40V
400mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
300mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
DMMT5551-7
Diodes Incorporated

TRANS 2NPN 160V 0.2A SOT26

  • Transistor Type: 2 NPN (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
패키지: SOT-23-6
재고29,418
200mA
160V
200mV @ 5mA, 50mA
50nA (ICBO)
80 @ 10mA, 5V
300mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
PMP5201G,135
Nexperia USA Inc.

TRANS 2PNP 45V 0.1A SOT-353

  • Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 175MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: 5-TSSOP
패키지: 5-TSSOP, SC-70-5, SOT-353
재고7,552
100mA
45V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
300mW
175MHz
150°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
5-TSSOP
CMKT3906 TR
Central Semiconductor Corp

TRANS 2PNP 40V 0.2A SOD-363

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고22,722
200mA
40V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
350mW
250MHz
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
HN1C01FE-Y,LF
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: SOT-563, SOT-666
재고35,664
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
100mW
80MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
DME501010R
Panasonic Electronic Components

TRANS NPN/PNP 50V 0.1A SMINI5

  • Transistor Type: NPN, PNP (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-SMD, Flat Leads
  • Supplier Device Package: SMini5-F3-B
패키지: 5-SMD, Flat Leads
재고24,168
100mA
50V
300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
100µA
210 @ 2mA, 10V
150mW
150MHz
150°C (TJ)
Surface Mount
5-SMD, Flat Leads
SMini5-F3-B
DMC506010R
Panasonic Electronic Components

TRANS 2NPN 50V 0.1A SMINI6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: SMini6-F3-B
패키지: 6-SMD, Flat Leads
재고27,774
100mA
50V
300mV @ 10mA, 100mA
100µA
210 @ 2mA, 10V
150mW
150MHz
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
SMini6-F3-B
UMT1NFHATN
Rohm Semiconductor

PNP+PNP GENERAL PURPOSE AMPLIFIC

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: -
재고18,066
150mA
50V
500mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
150mW
140MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
MJEC15033TR
onsemi

IC

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANTXV2N5793A
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
패키지: -
Request a Quote
600mA
40V
900mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
600mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
JAN2N5796A
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
패키지: -
Request a Quote
600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
600mW
-
-65°C ~ 175°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
BC846BS-QF
Nexperia USA Inc.

TRANS 2NPN 65V 0.1A 6TSSOP

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
Request a Quote
100mA
65V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
200mW
100MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
JANSL2N3810L
Microchip Technology

DUAL RH SMALL-SIGNAL BJT

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
패키지: -
Request a Quote
50mA
60V
250mV @ 100µA, 1mA
10µA (ICBO)
150 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
JANSL2N3810U
Microchip Technology

DUAL RH SMALL-SIGNAL BJT

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: U
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50mA
60V
250mV @ 100µA, 1mA
10µA (ICBO)
150 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
U
CMKT3904-TR-PBFREE
Central Semiconductor Corp

TRANS 2NPN 60V 0.2A SOT363

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
재고68,376
200mA
40V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
350mW
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
MPQ7091
onsemi

POWER BIPOLAR TRANSISTOR, PNP

  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 10mA, 10V
  • Power - Max: 750mW
  • Frequency - Transition: 70MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-PDIP
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500mA
150V
500mV @ 2mA, 20mA
250nA (ICBO)
35 @ 10mA, 10V
750mW
70MHz
-55°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-PDIP
2N2975
Microchip Technology

DUAL SMALL-SIGNAL BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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-
-
-
-
-
-
-
-
-
-
-
PBSS4260PANS-QX
Nexperia USA Inc.

PBSS4260PANS-Q/SOT1118/HUSON6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
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2A
60V
350mV @ 200mA, 1A
100nA
250 @ 100mA, 2V
510mW
140MHz
150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020D-6