페이지 32 - 트랜지스터 - 양극(BJT) - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC847PNE6327BTSA1	Infineon Technologies	TRANS NPN/PNP 45V 0.1A SOT363-6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	패키지: 6-VSSOP, SC-88, SOT-363	재고5,104	100mA	45V	650mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250mW	250MHz	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
CEN955 W/DATA	Central Semiconductor Corp	TRANSISTOR DUAL TO78 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고4,272	-	-	-	-	-	-	-	-	Through Hole	TO-78-6 Metal Can	TO-78-6
2N3810	Central Semiconductor Corp	TRANS 2PNP 50MA 60V TO78-6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고6,464	50mA	60V	250mV @ 1mA, 100µA	10nA (ICBO)	150 @ 1mA, 5V	600mW	100MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N3809	Central Semiconductor Corp	TRANS 2PNP 50MA 60V TO78-6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 100MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고17,880	50mA	60V	-	-	300 @ 1mA, 5V	600mW	100MHz	-	Through Hole	TO-78-6 Metal Can	TO-78-6
ZDT795ATC	Diodes Incorporated	TRANS 2PNP 140V 0.5A SM8 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Power - Max: 2.75W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	패키지: SOT-223-8	재고2,896	500mA	140V	250mV @ 50mA, 500mA	100nA (ICBO)	300 @ 10mA, 2V	2.75W	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
ZDT690TC	Diodes Incorporated	TRANS 2NPN 45V 2A SM8 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V Power - Max: 2.75W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	패키지: SOT-223-8	재고2,192	2A	45V	500mV @ 5mA, 1A	100nA (ICBO)	400 @ 1A, 2V	2.75W	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
MMDT5401-7	Diodes Incorporated	TRANS 2PNP 150V 0.2A SOT363 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 200mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고2,288	200mA	150V	500mV @ 5mA, 50mA	50nA (ICBO)	60 @ 10mA, 5V	200mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SSM2212RZ-RL	Analog Devices Inc.	TRANS 2NPN 40V 0.02A 8SOIC Transistor Type: 2 NPN (Dual) Matched Pair Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA Current - Collector Cutoff (Max): 500pA DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: 200MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,016	20mA	40V	200mV @ 100µA, 1mA	500pA	-	-	200MHz	-65°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
HN1B04FU-GR,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 0.15A US6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: 6-TSSOP, SC-88, SOT-363	재고5,264	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	200mW	150MHz	125°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
MAT01GH	Analog Devices Inc.	TRANS 2NPN 45V 0.025A TO78-6 Transistor Type: 2 NPN (Dual) Matched Pair Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 500mW Frequency - Transition: 450MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고7,600	25mA	45V	800mV @ 1mA, 10mA	400nA	-	500mW	450MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
PBSS5350SS,115	Nexperia USA Inc.	TRANS 2PNP 50V 2.7A 8SO Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 2.7A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 370mV @ 270mA, 2.7A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Power - Max: 750mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고19,188	2.7A	50V	370mV @ 270mA, 2.7A	100nA	180 @ 1A, 2V	750mW	-	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PBSS4160PAN,115	Nexperia USA Inc.	TRANS 2NPN 60V 1A 6HUSON Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Power - Max: 510mW Frequency - Transition: 175MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	패키지: 6-UDFN Exposed Pad	재고4,192	1A	60V	120mV @ 50mA, 500mA	100nA (ICBO)	150 @ 500mA, 2V	510mW	175MHz	150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
JANTX2N4854	Microsemi Corporation	TRANS NPN/PNP 40V 0.6A TO78 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 600mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고10,248	600mA	40V	400mV @ 15mA, 150mA	10µA (ICBO)	100 @ 150mA, 10V	600mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
DMC904010R	Panasonic Electronic Components	TRANS 2NPN 50V 0.1A SSMINI6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Power - Max: 125mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMini6-F3-B	패키지: SOT-563, SOT-666	재고3,568	100mA	50V	300mV @ 10mA, 100mA	100µA	210 @ 2mA, 10V	125mW	150MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	SSMini6-F3-B
MMDT4401-TP	Micro Commercial Co	TRANS 2NPN 40V 0.6A SOT363 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고3,328	600mA	40V	750mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 1V	200mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SLA6023	Sanken	TRANS 3NPN/3PNP DARL 60V 12SIP Transistor Type: 3 NPN, 3 PNP Darlington (3-Phase Bridge) Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 4V Power - Max: 5W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	패키지: 12-SIP, Exposed Tab	재고10,524	6A	60V	1.5V @ 10mA, 5A	10µA (ICBO)	2000 @ 5A, 4V	5W	80MHz	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
CMLT3904EG TR	Central Semiconductor Corp	TRANS NPN 60V 0.2A SOT563 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고24,744	200mA	40V	100mV @ 5mA, 50mA	-	30 @ 100mA, 1V	150mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
BC857CDW1T1G	ON Semiconductor	TRANS 2PNP 45V 0.1A SOT363 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 380mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고26,514	100mA	45V	650mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	380mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
JANKCAD2N3810	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: -	Request a Quote	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
BC846BDW1T1H	onsemi	GENERAL PURPOSE TRANSISTO Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 380mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: -	Request a Quote	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	380mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
HN1B04FE-Y-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q PNP + NPN TR VCEO:-50 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고23,994	150mA	50V	250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
MPQ3904-PBFREE	Central Semiconductor Corp	TRANS 4NPN 40V 0.2A Transistor Type: 4 NPN (Quad) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 1V Power - Max: 500mW Frequency - Transition: 250MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: TO-116	패키지: -	Request a Quote	200mA	40V	200mV @ 1mA, 10mA	50nA (ICBO)	75 @ 10mA, 1V	500mW	250MHz	-65°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	TO-116
JANSD2N3810L	Microchip Technology	DUAL RH SMALL-SIGNAL BJT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: -	Request a Quote	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
PMP5201Y-QX	Nexperia USA Inc.	PMP5201Y-Q/SOT363/SC-88 Transistor Type: 2 PNP (Dual) Matched Pair Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 175MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: -	재고8,856	100mA	45V	400mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	200mW	175MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
MMDT2907AQ_R1_00001	Panjit International Inc.	SOT-363, TRANSISTOR Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 150mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고52,857	600mA	60V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	150mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
UPA2002GR-E1-A	Renesas Electronics Corporation	DARLINGTON TRANSISTOR ARRAY Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PMBT3906YS-QX	Nexperia USA Inc.	PMBT3906YS-Q/SOT363/SC-88 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 230mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: -	Request a Quote	200mA	40V	400mV @ 5mA, 50mA	50nA (ICBO)	100 @ 10mA, 1V	230mW	250MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
BC846S-TPQ2	Micro Commercial Co	Interface Transistor Type: 2 NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	100mA	65V	300mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	200mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363

BC847PNE6327BTSA1

Infineon Technologies

TRANS NPN/PNP 45V 0.1A SOT363-6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

재고5,104

100mA

45V

650mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250mW

250MHz

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

CEN955 W/DATA

Central Semiconductor Corp

TRANSISTOR DUAL TO78

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고4,272

-

Through Hole

TO-78-6 Metal Can

TO-78-6

2N3810

Central Semiconductor Corp

TRANS 2PNP 50MA 60V TO78-6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 600mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고6,464

50mA

60V

250mV @ 1mA, 100µA

10nA (ICBO)

150 @ 1mA, 5V

600mW

100MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

2N3809

Central Semiconductor Corp

TRANS 2PNP 50MA 60V TO78-6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 600mW
Frequency - Transition: 100MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고17,880

50mA

60V

-

300 @ 1mA, 5V

600mW

100MHz

-

Through Hole

TO-78-6 Metal Can

TO-78-6

ZDT795ATC

Diodes Incorporated

TRANS 2PNP 140V 0.5A SM8

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Power - Max: 2.75W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

패키지: SOT-223-8

재고2,896

500mA

140V

250mV @ 50mA, 500mA

100nA (ICBO)

300 @ 10mA, 2V

2.75W

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

ZDT690TC

Diodes Incorporated

TRANS 2NPN 45V 2A SM8

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V
Power - Max: 2.75W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

패키지: SOT-223-8

재고2,192

2A

45V

500mV @ 5mA, 1A

100nA (ICBO)

400 @ 1A, 2V

2.75W

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

MMDT5401-7

Diodes Incorporated

TRANS 2PNP 150V 0.2A SOT363

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 200mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고2,288

200mA

150V

500mV @ 5mA, 50mA

50nA (ICBO)

60 @ 10mA, 5V

200mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SSM2212RZ-RL

Analog Devices Inc.

TRANS 2NPN 40V 0.02A 8SOIC

Transistor Type: 2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500pA
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: 200MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,016

20mA

40V

200mV @ 100µA, 1mA

500pA

-

200MHz

-65°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

HN1B04FU-GR,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 150MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

재고5,264

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

200mW

150MHz

125°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

MAT01GH

Analog Devices Inc.

TRANS 2NPN 45V 0.025A TO78-6

Transistor Type: 2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 500mW
Frequency - Transition: 450MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고7,600

25mA

45V

800mV @ 1mA, 10mA

400nA

-

500mW

450MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

PBSS5350SS,115

Nexperia USA Inc.

TRANS 2PNP 50V 2.7A 8SO

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 2.7A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 370mV @ 270mA, 2.7A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Power - Max: 750mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고19,188

2.7A

50V

370mV @ 270mA, 2.7A

100nA

180 @ 1A, 2V

750mW

-

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

PBSS4160PAN,115

Nexperia USA Inc.

TRANS 2NPN 60V 1A 6HUSON

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Power - Max: 510mW
Frequency - Transition: 175MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

패키지: 6-UDFN Exposed Pad

재고4,192

1A

60V

120mV @ 50mA, 500mA

100nA (ICBO)

150 @ 500mA, 2V

510mW

175MHz

150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

JANTX2N4854

Microsemi Corporation

TRANS NPN/PNP 40V 0.6A TO78

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고10,248

600mA

40V

400mV @ 15mA, 150mA

10µA (ICBO)

100 @ 150mA, 10V

600mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

DMC904010R

Panasonic Electronic Components

TRANS 2NPN 50V 0.1A SSMINI6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 125mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMini6-F3-B

패키지: SOT-563, SOT-666

재고3,568

100mA

50V

300mV @ 10mA, 100mA

100µA

210 @ 2mA, 10V

125mW

150MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

SSMini6-F3-B

MMDT4401-TP

Micro Commercial Co

TRANS 2NPN 40V 0.6A SOT363

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고3,328

600mA

40V

750mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 1V

200mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SLA6023

Sanken

TRANS 3NPN/3PNP DARL 60V 12SIP

Transistor Type: 3 NPN, 3 PNP Darlington (3-Phase Bridge)
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 4V
Power - Max: 5W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

패키지: 12-SIP, Exposed Tab

재고10,524

6A

60V

1.5V @ 10mA, 5A

10µA (ICBO)

2000 @ 5A, 4V

5W

80MHz

150°C (TJ)

Through Hole

12-SIP, Exposed Tab

12-SIP

CMLT3904EG TR

Central Semiconductor Corp

TRANS NPN 60V 0.2A SOT563

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고24,744

200mA

40V

100mV @ 5mA, 50mA

-

30 @ 100mA, 1V

150mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

BC857CDW1T1G

ON Semiconductor

TRANS 2PNP 45V 0.1A SOT363

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 380mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고26,514

100mA

45V

650mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

380mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

JANKCAD2N3810

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: -

Request a Quote

50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

BC846BDW1T1H

onsemi

GENERAL PURPOSE TRANSISTO

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 380mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: -

Request a Quote

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

380mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

HN1B04FE-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고23,994

150mA

50V

250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

MPQ3904-PBFREE

Central Semiconductor Corp

TRANS 4NPN 40V 0.2A

Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 1V
Power - Max: 500mW
Frequency - Transition: 250MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: TO-116

패키지: -

Request a Quote

200mA

40V

200mV @ 1mA, 10mA

50nA (ICBO)

75 @ 10mA, 1V

500mW

250MHz

-65°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

TO-116

JANSD2N3810L

Microchip Technology

DUAL RH SMALL-SIGNAL BJT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: -

Request a Quote

50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

PMP5201Y-QX

Nexperia USA Inc.

PMP5201Y-Q/SOT363/SC-88

Transistor Type: 2 PNP (Dual) Matched Pair
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 175MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: -

재고8,856

100mA

45V

400mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

200mW

175MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

MMDT2907AQ_R1_00001

Panjit International Inc.

SOT-363, TRANSISTOR

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 150mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고52,857

600mA

60V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

150mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

UPA2002GR-E1-A

Renesas Electronics Corporation

DARLINGTON TRANSISTOR ARRAY

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

PMBT3906YS-QX

Nexperia USA Inc.

PMBT3906YS-Q/SOT363/SC-88

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 230mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: -

Request a Quote

200mA

40V

400mV @ 5mA, 50mA

50nA (ICBO)

100 @ 10mA, 1V

230mW

250MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

BC846S-TPQ2

Micro Commercial Co

Interface

Transistor Type: 2 NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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100mA

65V

300mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

200mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363