페이지 27 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NE46234-SE-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 2.3dB @ 1GHz Gain: 8.3dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고2,480	12V	6GHz	2.3dB @ 1GHz	8.3dB	1.8W	125 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
BFR93AW,135	NXP	TRANS NPN 12V 35MA 5GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고7,200	12V	5GHz	1.5dB ~ 2.1dB @ 1GHz ~ 2GHz	-	300mW	40 @ 30mA, 5V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
MPSH10_D74Z	Fairchild/ON Semiconductor	TRANS RF NPN 25V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,664	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
UPA814T-A	CEL	TRANSISTOR NPN 9GHZ SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SO	패키지: 6-TSSOP, SC-88, SOT-363	재고2,912	6V	9GHz	1.5dB @ 2GHz	-	200mW	80 @ 3mA, 1V	100mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-SO
UPA802T-T1-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고72,000	10V	7GHz	1.4dB @ 1GHz	12dB	200mW	70 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
KSC1674RTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,312	20V	600MHz	3dB ~ 5dB @ 100MHz	-	250mW	40 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSC2756OMTF	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 30MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 850MHz Noise Figure (dB Typ @ f): 6.5dB @ 200MHz Gain: 15dB ~ 23dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고396,000	20V	850MHz	6.5dB @ 200MHz	15dB ~ 23dB	150mW	90 @ 5mA, 10V	30mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BFQ31ATC	Diodes Incorporated	TRANSISTOR UHF/VHF NPN SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,608	15V	600MHz	6dB @ 60MHz	-	330mW	100 @ 3mA, 1V	100mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
AT-32063-TR1	Broadcom Limited	IC TRANS NPN BIPOLAR SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz Gain: 12.5dB ~ 14.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고835,344	5.5V	-	1.1dB ~ 1.4dB @ 900MHz	12.5dB ~ 14.5dB	150mW	50 @ 5mA, 2.7V	32mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BFS17W,135	NXP	TRANS NPN 15V 50MA 1GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.6GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고6,080	15V	1.6GHz	4.5dB @ 500MHz	-	300mW	25 @ 2mA, 1V	50mA	175°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BFG31,115	NXP	TRANS PNP 10V 5GHZ SOT223 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고7,120	15V	5GHz	-	-	1W	25 @ 70mA, 10V	100mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
PH1090-350L	M/A-Com Technology Solutions	TRANSISTOR 350W 1090MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 80V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.32dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 17A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고3,344	80V	-	-	8.32dB	350W	-	17A	200°C (TJ)	Chassis Mount	-	-
MS2552	Microsemi Corporation	TRANS RF BIPO 880W 24A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.7dB Power - Max: 880W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: 2NLFL Supplier Device Package: 2NLFL	패키지: 2NLFL	재고6,320	65V	1.025GHz ~ 1.15GHz	-	6.7dB	880W	15 @ 1A, 5V	24A	250°C (TJ)	Chassis Mount	2NLFL	2NLFL
MRF392	M/A-Com Technology Solutions	TRANS RF NPN 30V 16A 744A-01 Transistor Type: 2 NPN (Dual) Common Emitter Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V Current - Collector (Ic) (Max): 16A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 744A-01 Supplier Device Package: 744A-01, Style 1	패키지: 744A-01	재고5,888	30V	-	-	10dB	125W	40 @ 1A, 5V	16A	200°C (TJ)	Chassis Mount	744A-01	744A-01, Style 1
SD1275	STMicroelectronics	TRANS NPN RF MICROWAVE VHF M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M135 Supplier Device Package: M135	패키지: M135	재고6,264	16V	-	-	9dB	70W	20 @ 250mA, 5V	8A	200°C (TJ)	Chassis, Stud Mount	M135	M135
MCH4017-TL-H	ON Semiconductor	TRANS NPN 12V 100MA MCPH4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 17dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-MCPH	패키지: 4-SMD, Flat Leads	재고2,912	12V	10GHz	1.2dB @ 1GHz	17dB	450mW	60 @ 50mA, 5V	100mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-MCPH
BFR843EL3E6327XTSA1	Infineon Technologies	TRANSISTOR NPN TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.6V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 25.5dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 55mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: TSLP-3-10	패키지: 3-XFDFN	재고7,040	2.6V	-	-	25.5dB	125mW	-	55mA	150°C (TJ)	Surface Mount	3-XFDFN	TSLP-3-10
BFU520R	NXP	TRANS RF NPN 12V 30MA SOT-143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10.5GHz Noise Figure (dB Typ @ f): 0.65dB @ 900MHz Gain: 20dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고5,056	12V	10.5GHz	0.65dB @ 900MHz	20dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
MCH4009-TL-H	ON Semiconductor	TRANS NPN 3.5V 40MA MCPH4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 2GHz Gain: 13.5dB Power - Max: 120mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-MCPH	패키지: 4-SMD, Flat Leads	재고36,000	3.5V	25GHz	1.1dB @ 2GHz	13.5dB	120mW	50 @ 5mA, 1V	40mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-MCPH
BFQ19SH6327XTSA1	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3dB @ 1.8GHz Gain: 7dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고31,362	15V	5.5GHz	3dB @ 1.8GHz	7dB	1W	70 @ 70mA, 8V	120mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
2224-6P	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1013-20H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RF3358-TP	Micro Commercial Co	Interface Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	18V	6GHz	-	10dB	200mW	130 @ 20mA, 10V	100mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
ON5088	NXP	RF SMALL SIGNAL BIPOLAR TRANSIST Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NSVF5490SKT3G	onsemi	RF-TR 10V 30MA FT=8G NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB @ 1.5GHz Gain: 10dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: SOT-623/SSFP	패키지: -	재고22,986	10V	8GHz	1.4dB @ 1.5GHz	10dB	100mW	90 @ 10mA, 5V	30mA	-55°C ~ 150°C (TJ)	Surface Mount	SOT-623F	SOT-623/SSFP
2SC5772FR-TL-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.9dB @ 900MHz Gain: 13dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 5V Current - Collector (Ic) (Max): 75mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-MPAK	패키지: -	Request a Quote	9V	9GHz	1.9dB @ 900MHz	13dB	700mW	80 @ 20mA, 5V	75mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK
2SC5998YC-TL-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 10.5GHz Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 100mA, 3V Current - Collector (Ic) (Max): 500mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-MPAK	패키지: -	Request a Quote	5V	10.5GHz	-	13dB	700mW	110 @ 100mA, 3V	500mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK
42107HS	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

NE46234-SE-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
Gain: 8.3dB
Power - Max: 1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고2,480

12V

6GHz

2.3dB @ 1GHz

8.3dB

1.8W

125 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

BFR93AW,135

NXP

TRANS NPN 12V 35MA 5GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고7,200

12V

5GHz

1.5dB ~ 2.1dB @ 1GHz ~ 2GHz

-

300mW

40 @ 30mA, 5V

35mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

MPSH10_D74Z

Fairchild/ON Semiconductor

TRANS RF NPN 25V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,664

25V

650MHz

-

350mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

UPA814T-A

CEL

TRANSISTOR NPN 9GHZ SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-SO

패키지: 6-TSSOP, SC-88, SOT-363

재고2,912

6V

9GHz

1.5dB @ 2GHz

-

200mW

80 @ 3mA, 1V

100mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-SO

UPA802T-T1-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고72,000

10V

7GHz

1.4dB @ 1GHz

12dB

200mW

70 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

KSC1674RTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,312

20V

600MHz

3dB ~ 5dB @ 100MHz

-

250mW

40 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSC2756OMTF

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 30MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 850MHz
Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
Gain: 15dB ~ 23dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고396,000

20V

850MHz

6.5dB @ 200MHz

15dB ~ 23dB

150mW

90 @ 5mA, 10V

30mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BFQ31ATC

Diodes Incorporated

TRANSISTOR UHF/VHF NPN SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,608

15V

600MHz

6dB @ 60MHz

-

330mW

100 @ 3mA, 1V

100mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

AT-32063-TR1

Broadcom Limited

IC TRANS NPN BIPOLAR SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 12.5dB ~ 14.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고835,344

5.5V

-

1.1dB ~ 1.4dB @ 900MHz

12.5dB ~ 14.5dB

150mW

50 @ 5mA, 2.7V

32mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BFS17W,135

NXP

TRANS NPN 15V 50MA 1GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.6GHz
Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고6,080

15V

1.6GHz

4.5dB @ 500MHz

-

300mW

25 @ 2mA, 1V

50mA

175°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BFG31,115

NXP

TRANS PNP 10V 5GHZ SOT223

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고7,120

15V

5GHz

-

1W

25 @ 70mA, 10V

100mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

PH1090-350L

M/A-Com Technology Solutions

TRANSISTOR 350W 1090MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 80V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.32dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 17A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,344

80V

-

8.32dB

350W

-

17A

200°C (TJ)

Chassis Mount

-

MS2552

Microsemi Corporation

TRANS RF BIPO 880W 24A M112

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.7dB
Power - Max: 880W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2NLFL
Supplier Device Package: 2NLFL

패키지: 2NLFL

재고6,320

65V

1.025GHz ~ 1.15GHz

-

6.7dB

880W

15 @ 1A, 5V

24A

250°C (TJ)

Chassis Mount

2NLFL

MRF392

M/A-Com Technology Solutions

TRANS RF NPN 30V 16A 744A-01

Transistor Type: 2 NPN (Dual) Common Emitter
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 125W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Current - Collector (Ic) (Max): 16A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 744A-01
Supplier Device Package: 744A-01, Style 1

패키지: 744A-01

재고5,888

30V

-

10dB

125W

40 @ 1A, 5V

16A

200°C (TJ)

Chassis Mount

744A-01

744A-01, Style 1

SD1275

STMicroelectronics

TRANS NPN RF MICROWAVE VHF M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: M135
Supplier Device Package: M135

패키지: M135

재고6,264

16V

-

9dB

70W

20 @ 250mA, 5V

8A

200°C (TJ)

Chassis, Stud Mount

M135

MCH4017-TL-H

ON Semiconductor

TRANS NPN 12V 100MA MCPH4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 17dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH

패키지: 4-SMD, Flat Leads

재고2,912

12V

10GHz

1.2dB @ 1GHz

17dB

450mW

60 @ 50mA, 5V

100mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-MCPH

BFR843EL3E6327XTSA1

Infineon Technologies

TRANSISTOR NPN TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.6V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 25.5dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 55mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: TSLP-3-10

패키지: 3-XFDFN

재고7,040

2.6V

-

25.5dB

125mW

-

55mA

150°C (TJ)

Surface Mount

3-XFDFN

TSLP-3-10

BFU520R

NXP

TRANS RF NPN 12V 30MA SOT-143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10.5GHz
Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
Gain: 20dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고5,056

12V

10.5GHz

0.65dB @ 900MHz

20dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

MCH4009-TL-H

ON Semiconductor

TRANS NPN 3.5V 40MA MCPH4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
Gain: 13.5dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH

패키지: 4-SMD, Flat Leads

재고36,000

3.5V

25GHz

1.1dB @ 2GHz

13.5dB

120mW

50 @ 5mA, 1V

40mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-MCPH

BFQ19SH6327XTSA1

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3dB @ 1.8GHz
Gain: 7dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고31,362

15V

5.5GHz

3dB @ 1.8GHz

7dB

1W

70 @ 70mA, 8V

120mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

2224-6P

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SD1013-20H

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

RF3358-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

Request a Quote

18V

6GHz

-

10dB

200mW

130 @ 20mA, 10V

100mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

ON5088

NXP

RF SMALL SIGNAL BIPOLAR TRANSIST

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

NSVF5490SKT3G

onsemi

RF-TR 10V 30MA FT=8G NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1.5GHz
Gain: 10dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: SOT-623/SSFP

패키지: -

재고22,986

10V

8GHz

1.4dB @ 1.5GHz

10dB

100mW

90 @ 10mA, 5V

30mA

-55°C ~ 150°C (TJ)

Surface Mount

SOT-623F

SOT-623/SSFP

2SC5772FR-TL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB @ 900MHz
Gain: 13dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 5V
Current - Collector (Ic) (Max): 75mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-MPAK

패키지: -

Request a Quote

9V

9GHz

1.9dB @ 900MHz

13dB

700mW

80 @ 20mA, 5V

75mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-MPAK

2SC5998YC-TL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 10.5GHz
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 100mA, 3V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-MPAK

패키지: -

Request a Quote

5V

10.5GHz

-

13dB

700mW

110 @ 100mA, 3V

500mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-MPAK

42107HS

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-