페이지 28 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BF 775 E6327	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16dB Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고3,568	15V	5GHz	1.4dB ~ 2dB @ 900MHz ~ 1.8GHz	10.5dB ~ 16dB	280mW	70 @ 15mA, 8V	45mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
NE67818-T1-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고108,000	6V	12GHz	1.7dB @ 2GHz	10dB	200mW	75 @ 30mA, 3V	100mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
2SC5010-T1-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 8.5dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고851,880	6V	12GHz	1.5dB @ 2GHz	8.5dB	125mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
0105-50	Microsemi Corporation	TRANS RF BIPO 140W 500MHZ 55JT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 100MHz ~ 500MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 10dB Power - Max: 140W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JT Supplier Device Package: 55JT	패키지: 55JT	재고6,528	65V	100MHz ~ 500MHz	-	8.5dB ~ 10dB	140W	10 @ 1A, 5V	7A	200°C (TJ)	Chassis Mount	55JT	55JT
MS2472	Microsemi Corporation	TRANS RF BIPO 1350W 40A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 5.6dB Power - Max: 1350W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	패키지: M112	재고2,864	65V	1.025GHz ~ 1.15GHz	-	5.6dB	1350W	5 @ 250mA, 5V	40A	200°C (TJ)	Chassis Mount	M112	M112
BFR94AW,115	NXP	TRANS NPN 5GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고6,512	15V	5GHz	2dB ~ 3dB @ 1GHz ~ 2GHz	-	300mW	65 @ 15mA, 10V	25mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
PN5179_D26Z	Fairchild/ON Semiconductor	TRANS RF NPN 12V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 5dB @ 200MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,808	12V	2GHz	5dB @ 200MHz	15dB	350mW	25 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MMBTH81_D87Z	Fairchild/ON Semiconductor	TRANS RF PNP 20V 50MA SOT-23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고4,528	20V	600MHz	-	-	225mW	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
UPA895TS-A	CEL	TRANSISTOR NPN DUAL 6-SMINI Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 130mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-Super Lead-Less MiniMold	패키지: 6-SMD, Flat Leads	재고2,128	5.5V	6.5GHz	1.9dB ~ 2.5dB @ 2GHz	-	130mW	100 @ 5mA, 1V	100mA	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	6-Super Lead-Less MiniMold
NE68539-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 11dB Power - Max: 180mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	패키지: TO-253-4, TO-253AA	재고7,904	6V	12GHz	1.5dB @ 2GHz	11dB	180mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
MPSH10	Fairchild/ON Semiconductor	TRANSISTOR NPN RF VHF/UHF TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고714,540	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFG541,115	NXP	TRANS NPN 15V 9GHZ SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz Gain: - Power - Max: 650mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고5,056	15V	9GHz	1.3dB ~ 2.4dB @ 900MHz	-	650mW	60 @ 40mA, 8V	120mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BFG505,215	NXP	TRANS NPN 6V 18MA SOT343N Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V Current - Collector (Ic) (Max): 18mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고5,968	15V	9GHz	1.2dB ~ 2.1dB @ 900MHz	-	150mW	60 @ 5mA, 6V	18mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
0510-50A	Microsemi Corporation	TRANS RF BIPO 50W 1000MHZ 55AV2 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 27V Frequency - Transition: 500MHz ~ 1GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 3.7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AV Supplier Device Package: 55AV	패키지: 55AV	재고2,464	27V	500MHz ~ 1GHz	-	7dB	50W	10 @ 500mA, 5V	3.7A	200°C (TJ)	Chassis Mount	55AV	55AV
1517-20M	Microsemi Corporation	TRANS RF BIPO 175W 3A 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.48GHz ~ 1.65GHz Noise Figure (dB Typ @ f): - Gain: 7.6dB ~ 9.3dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 55LV-1 Supplier Device Package: 55LV-1	패키지: 55LV-1	재고3,232	65V	1.48GHz ~ 1.65GHz	-	7.6dB ~ 9.3dB	175W	20 @ 500mA, 5V	3A	-	Chassis Mount	55LV-1	55LV-1
MS652S	Microsemi Corporation	TRANS RF BIPO 25W 2A M123 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 450MHz ~ 512MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M123 Supplier Device Package: M123	패키지: M123	재고3,584	16V	450MHz ~ 512MHz	-	10dB	25W	10 @ 200mA, 5V	2A	200°C (TJ)	Chassis Mount	M123	M123
HFA3135IHZ96	Intersil	IC TRANS ARRAY PNP MATCH SOT23-6 Transistor Type: 2 PNP (Dual) Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 5.2dB @ 900MHz Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10mA, 2V Current - Collector (Ic) (Max): 26mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: SOT-23-6	재고5,040	9V	7GHz	5.2dB @ 900MHz	-	-	15 @ 10mA, 2V	26mA	150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
BFU550AVL	NXP	TRANS RF NPN 12V 50MA TO-236AB Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz Gain: 12dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,128	12V	11GHz	1.4dB @ 1.8GHz	12dB	450mW	60 @ 15mA, 8V	50mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
MRF10350	M/A-Com Technology Solutions	TRANS NPN 350W 1025MHZ-1150MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 31A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 355E-01 Supplier Device Package: 355E-01, Style 1	패키지: 355E-01	재고4,800	65V	-	-	9dB	350W	20 @ 5A, 5V	31A	200°C (TJ)	Chassis Mount	355E-01	355E-01, Style 1
2SC4093-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 14.2dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	패키지: TO-253-4, TO-253AA	재고47,076	12V	7GHz	1.1dB @ 1GHz	14.2dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
2SC2714-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN S-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Gain: 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	패키지: TO-236-3, SC-59, SOT-23-3	재고100,962	30V	550MHz	2.5dB @ 100MHz	23dB	100mW	100 @ 1mA, 6V	20mA	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
2SC2714-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 30V 550MHZ S-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Gain: 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	패키지: TO-236-3, SC-59, SOT-23-3	재고21,624	30V	550MHz	2.5dB @ 100MHz	23dB	100mW	70 @ 1mA, 6V	20mA	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
MPSH10RLRA	onsemi	TRANS NPN VHF/UHF SS 25V TO92 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC5010-A	CEL	RF TRANS NPN 6V 12GHZ SOT523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 8.5dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: -	패키지: -	Request a Quote	6V	12GHz	1.5dB @ 2GHz	8.5dB	125mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SOT-523	-
S9018	EVVO	TRANS NPN 1V5 SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고8,700	15V	800MHz	-	-	200mW	70 @ 1mA, 5V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2N3866-TRAY	Central Semiconductor Corp	RF TRANS NPN 30V 500MHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	30V	500MHz	-	10dB	5W	10 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
SD1430-02	Microsemi Corporation	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1330-05C	Microsemi Corporation	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BF 775 E6327

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16dB
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고3,568

15V

5GHz

1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

10.5dB ~ 16dB

280mW

70 @ 15mA, 8V

45mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

NE67818-T1-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 10dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고108,000

6V

12GHz

1.7dB @ 2GHz

10dB

200mW

75 @ 30mA, 3V

100mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

2SC5010-T1-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 8.5dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고851,880

6V

12GHz

1.5dB @ 2GHz

8.5dB

125mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SOT-523

0105-50

Microsemi Corporation

TRANS RF BIPO 140W 500MHZ 55JT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 100MHz ~ 500MHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 10dB
Power - Max: 140W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 7A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55JT
Supplier Device Package: 55JT

패키지: 55JT

재고6,528

65V

100MHz ~ 500MHz

-

8.5dB ~ 10dB

140W

10 @ 1A, 5V

7A

200°C (TJ)

Chassis Mount

55JT

MS2472

Microsemi Corporation

TRANS RF BIPO 1350W 40A M112

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 5.6dB
Power - Max: 1350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112

패키지: M112

재고2,864

65V

1.025GHz ~ 1.15GHz

-

5.6dB

1350W

5 @ 250mA, 5V

40A

200°C (TJ)

Chassis Mount

M112

BFR94AW,115

NXP

TRANS NPN 5GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고6,512

15V

5GHz

2dB ~ 3dB @ 1GHz ~ 2GHz

-

300mW

65 @ 15mA, 10V

25mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

PN5179_D26Z

Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,808

12V

2GHz

5dB @ 200MHz

15dB

350mW

25 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MMBTH81_D87Z

Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA SOT-23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고4,528

20V

600MHz

-

225mW

60 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

UPA895TS-A

CEL

TRANSISTOR NPN DUAL 6-SMINI

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 130mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-Super Lead-Less MiniMold

패키지: 6-SMD, Flat Leads

재고2,128

5.5V

6.5GHz

1.9dB ~ 2.5dB @ 2GHz

-

130mW

100 @ 5mA, 1V

100mA

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

6-Super Lead-Less MiniMold

NE68539-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 11dB
Power - Max: 180mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

패키지: TO-253-4, TO-253AA

재고7,904

6V

12GHz

1.5dB @ 2GHz

11dB

180mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

MPSH10

Fairchild/ON Semiconductor

TRANSISTOR NPN RF VHF/UHF TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고714,540

25V

650MHz

-

350mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFG541,115

NXP

TRANS NPN 15V 9GHZ SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Gain: -
Power - Max: 650mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고5,056

15V

9GHz

1.3dB ~ 2.4dB @ 900MHz

-

650mW

60 @ 40mA, 8V

120mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BFG505,215

NXP

TRANS NPN 6V 18MA SOT343N

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Current - Collector (Ic) (Max): 18mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고5,968

15V

9GHz

1.2dB ~ 2.1dB @ 900MHz

-

150mW

60 @ 5mA, 6V

18mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

0510-50A

Microsemi Corporation

TRANS RF BIPO 50W 1000MHZ 55AV2

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 27V
Frequency - Transition: 500MHz ~ 1GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 3.7A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AV
Supplier Device Package: 55AV

패키지: 55AV

재고2,464

27V

500MHz ~ 1GHz

-

7dB

50W

10 @ 500mA, 5V

3.7A

200°C (TJ)

Chassis Mount

55AV

1517-20M

Microsemi Corporation

TRANS RF BIPO 175W 3A 55LV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.48GHz ~ 1.65GHz
Noise Figure (dB Typ @ f): -
Gain: 7.6dB ~ 9.3dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 55LV-1
Supplier Device Package: 55LV-1

패키지: 55LV-1

재고3,232

65V

1.48GHz ~ 1.65GHz

-

7.6dB ~ 9.3dB

175W

20 @ 500mA, 5V

3A

-

Chassis Mount

55LV-1

MS652S

Microsemi Corporation

TRANS RF BIPO 25W 2A M123

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 450MHz ~ 512MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M123
Supplier Device Package: M123

패키지: M123

재고3,584

16V

450MHz ~ 512MHz

-

10dB

25W

10 @ 200mA, 5V

2A

200°C (TJ)

Chassis Mount

M123

HFA3135IHZ96

Intersil

IC TRANS ARRAY PNP MATCH SOT23-6

Transistor Type: 2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 5.2dB @ 900MHz
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10mA, 2V
Current - Collector (Ic) (Max): 26mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: SOT-23-6

재고5,040

9V

7GHz

5.2dB @ 900MHz

-

15 @ 10mA, 2V

26mA

150°C (TJ)

Surface Mount

SOT-23-6

BFU550AVL

NXP

TRANS RF NPN 12V 50MA TO-236AB

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
Gain: 12dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,128

12V

11GHz

1.4dB @ 1.8GHz

12dB

450mW

60 @ 15mA, 8V

50mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

MRF10350

M/A-Com Technology Solutions

TRANS NPN 350W 1025MHZ-1150MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 31A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 355E-01
Supplier Device Package: 355E-01, Style 1

패키지: 355E-01

재고4,800

65V

-

9dB

350W

20 @ 5A, 5V

31A

200°C (TJ)

Chassis Mount

355E-01

355E-01, Style 1

2SC4093-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 14.2dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

패키지: TO-253-4, TO-253AA

재고47,076

12V

7GHz

1.1dB @ 1GHz

14.2dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

2SC2714-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN S-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Gain: 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

패키지: TO-236-3, SC-59, SOT-23-3

재고100,962

30V

550MHz

2.5dB @ 100MHz

23dB

100mW

100 @ 1mA, 6V

20mA

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

2SC2714-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ S-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Gain: 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

패키지: TO-236-3, SC-59, SOT-23-3

재고21,624

30V

550MHz

2.5dB @ 100MHz

23dB

100mW

70 @ 1mA, 6V

20mA

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

MPSH10RLRA

onsemi

TRANS NPN VHF/UHF SS 25V TO92

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC5010-A

CEL

RF TRANS NPN 6V 12GHZ SOT523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 8.5dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: -

패키지: -

Request a Quote

6V

12GHz

1.5dB @ 2GHz

8.5dB

125mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SOT-523

-

S9018

EVVO

TRANS NPN 1V5 SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고8,700

15V

800MHz

-

200mW

70 @ 1mA, 5V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2N3866-TRAY

Central Semiconductor Corp

RF TRANS NPN 30V 500MHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

30V

500MHz

-

10dB

5W

10 @ 50mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

SD1430-02

Microsemi Corporation

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SD1330-05C

Microsemi Corporation

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-