트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BF799E6327HTSA1	Infineon Technologies	TRANSISTOR NPN RF 20V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,016	20V	800MHz	3dB @ 100MHz	-	280mW	40 @ 20mA, 10V	35mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BFR 93AW E6327	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 15.5dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 90mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고6,336	12V	6GHz	1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz	10.5dB ~ 15.5dB	300mW	70 @ 30mA, 8V	90mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
JAN2N2857	Microsemi Corporation	TRANS NPN 15V 0.04A TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	패키지: TO-72-3 Metal Can	재고5,568	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
MS2228	Microsemi Corporation	TRANS RF BIPO 175W 5.4A M214 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 5.4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	패키지: M214	재고5,888	65V	1.03GHz ~ 1.09GHz	-	9dB	175W	10 @ 1A, 5V	5.4A	200°C (TJ)	Chassis Mount	M214	M214
MS2202	Microsemi Corporation	TRANS BIPO NPN M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	패키지: M115	재고7,248	3.5V	1.025GHz ~ 1.15GHz	-	9dB	10W	30 @ 100mA, 5V	250mA	200°C (TJ)	Chassis Mount	M115	M115
NESG7030M04-A	CEL	DISCRETE RF DIODE Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.3V Frequency - Transition: 5.8GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz Gain: 14dB ~ 21dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: M04	패키지: SOT-343F	재고5,280	4.3V	5.8GHz	0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz	14dB ~ 21dB	125mW	200 @ 5mA, 2V	30mA	150°C (TJ)	Surface Mount	SOT-343F	M04
MRF559G	Microsemi Corporation	TRANS NPN 16V 150MA MACRO X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	패키지: Micro-X ceramic (84C)	재고4,992	16V	870MHz	-	9.5dB	2W	30 @ 50mA, 10V	150mA	-	Surface Mount	Micro-X ceramic (84C)	Micro-X ceramic (84C)
MSC2295-CT1G	ON Semiconductor	TRANS NPN RF BIPO 20V SC-59 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	패키지: TO-236-3, SC-59, SOT-23-3	재고5,840	20V	150MHz	-	-	200mW	110 @ 1mA, 10V	30mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
MPS5179RLRAG	ON Semiconductor	TRANSISTOR NPN RF BIPO 12V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,136	12V	2GHz	-	-	200W	25 @ 3mA, 1V	50mA	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
AT-41511-TR2G	Broadcom Limited	TRANS NPN BIPO 12V 50MA SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz Gain: 11dB ~ 15.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	패키지: TO-253-4, TO-253AA	재고2,704	12V	-	1dB ~ 1.7dB @ 900MHz ~ 2.4GHz	11dB ~ 15.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
NE68519-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 11dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고5,296	6V	12GHz	1.5dB @ 2GHz	11dB	125mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
MMBT5770	Fairchild/ON Semiconductor	TRANSISTOR RF NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 10mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고432,000	15V	600MHz	-	-	225mW	30 @ 3mA, 1V	10mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
KSC2756YMTF	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 30MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 850MHz Noise Figure (dB Typ @ f): 6.5dB @ 200MHz Gain: 15dB ~ 23dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,088,000	20V	850MHz	6.5dB @ 200MHz	15dB ~ 23dB	150mW	120 @ 5mA, 10V	30mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
UPA800T-T1-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 7.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고22,512	10V	8GHz	1.9dB @ 2GHz	7.5dB	200mW	80 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BFG540W,115	NXP	TRANS RF NPN 15V 9GHZ SOT343N Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343 Reverse Pinning Supplier Device Package: 4-SO	패키지: SOT-343 Reverse Pinning	재고5,312	15V	9GHz	1.3dB ~ 1.8dB @ 900MHz	-	500mW	100 @ 40mA, 8V	120mA	175°C (TJ)	Surface Mount	SOT-343 Reverse Pinning	4-SO
BFR360FH6765XTSA1	Infineon Technologies	TRANS RF NPN 6V 35MA TSFP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Gain: 15.5dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	패키지: SOT-723	재고5,824	9V	14GHz	1dB @ 1.8GHz	15.5dB	210mW	90 @ 15mA, 3V	35mA	150°C (TJ)	Surface Mount	SOT-723	PG-TSFP-3
DME500	Microsemi Corporation	TRANS RF BIPO 1700W 40A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6dB ~ 6.5dB Power - Max: 1700W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	패키지: 55KT	재고5,776	55V	1.025GHz ~ 1.15GHz	-	6dB ~ 6.5dB	1700W	10 @ 500mA, 5V	40A	200°C (TJ)	Chassis Mount	55KT	55KT
BFU530XVL	NXP	TRANS RF NPN 12V 40MA SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 16.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V Current - Collector (Ic) (Max): 40mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고7,888	12V	11GHz	1.1dB @ 1.8GHz	16.5dB	450mW	60 @ 10mA, 8V	40mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
BFT25,215	NXP	TRANS RF NPN 5V 2.3GHZ SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 2.3GHz Noise Figure (dB Typ @ f): 5.5dB @ 500MHz Gain: - Power - Max: 30mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 1V Current - Collector (Ic) (Max): 6.5mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고4,736	5V	2.3GHz	5.5dB @ 500MHz	-	30mW	20 @ 1mA, 1V	6.5mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFG403W,115	NXP	TRANS NPN 4.5V 17GHZ SOT343R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 17GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2GHz Gain: 20dB ~ 22dB Power - Max: 16mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3mA, 2V Current - Collector (Ic) (Max): 3.6mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	패키지: SC-82A, SOT-343	재고2,208	4.5V	17GHz	1dB ~ 1.6dB @ 900MHz ~ 2GHz	20dB ~ 22dB	16mW	50 @ 3mA, 2V	3.6mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
MRF422	M/A-Com Technology Solutions	TRANS RF NPN 35V 20A 211-11 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 150W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 211-11, Style 2 Supplier Device Package: 211-11, Style 2	패키지: 211-11, Style 2	재고6,252	35V	-	-	13dB	150W	15 @ 5A, 5V	20A	-	Chassis Mount	211-11, Style 2	211-11, Style 2
2N5179	Central Semiconductor Corp	TRANS NPN 12V 0.05A TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: TO-206AF, TO-72-4 Metal Can	재고17,928	12V	2GHz	4.5dB @ 200MHz	15dB	200mW	25 @ 3mA, 1V	50mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
2SC5066-O,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: SC-75, SOT-416	재고22,500	12V	7GHz	1dB @ 500MHz	-	100mW	80 @ 10mA, 5V	30mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
BFU550R	NXP	TRANS RF NPN 12V 50MA SOT-143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 0.7dB @ 900MHz Gain: 21dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고90,948	12V	11GHz	0.7dB @ 900MHz	21dB	450mW	60 @ 15mA, 8V	50mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
MRFC544	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MS1701	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PH9034	MACOM Technology Solutions	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CP616-2N5160-WN	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	40V	500MHz	-	-	-	10 @ 50mA, 5V	400mA	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die

BF799E6327HTSA1

Infineon Technologies

TRANSISTOR NPN RF 20V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,016

20V

800MHz

3dB @ 100MHz

-

280mW

40 @ 20mA, 10V

35mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BFR 93AW E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고6,336

12V

6GHz

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

10.5dB ~ 15.5dB

300mW

70 @ 30mA, 8V

90mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

JAN2N2857

Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 12.5dB ~ 21dB @ 450MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

패키지: TO-72-3 Metal Can

재고5,568

15V

500MHz

4.5dB @ 450MHz

12.5dB ~ 21dB @ 450MHz

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

MS2228

Microsemi Corporation

TRANS RF BIPO 175W 5.4A M214

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 5.4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M214
Supplier Device Package: M214

패키지: M214

재고5,888

65V

1.03GHz ~ 1.09GHz

-

9dB

175W

10 @ 1A, 5V

5.4A

200°C (TJ)

Chassis Mount

M214

MS2202

Microsemi Corporation

TRANS BIPO NPN M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

패키지: M115

재고7,248

3.5V

1.025GHz ~ 1.15GHz

-

9dB

10W

30 @ 100mA, 5V

250mA

200°C (TJ)

Chassis Mount

M115

NESG7030M04-A

CEL

DISCRETE RF DIODE

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.3V
Frequency - Transition: 5.8GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz
Gain: 14dB ~ 21dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: M04

패키지: SOT-343F

재고5,280

4.3V

5.8GHz

0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz

14dB ~ 21dB

125mW

200 @ 5mA, 2V

30mA

150°C (TJ)

Surface Mount

SOT-343F

M04

MRF559G

Microsemi Corporation

TRANS NPN 16V 150MA MACRO X

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Micro-X ceramic (84C)
Supplier Device Package: Micro-X ceramic (84C)

패키지: Micro-X ceramic (84C)

재고4,992

16V

870MHz

-

9.5dB

2W

30 @ 50mA, 10V

150mA

-

Surface Mount

Micro-X ceramic (84C)

MSC2295-CT1G

ON Semiconductor

TRANS NPN RF BIPO 20V SC-59

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

패키지: TO-236-3, SC-59, SOT-23-3

재고5,840

20V

150MHz

-

200mW

110 @ 1mA, 10V

30mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

MPS5179RLRAG

ON Semiconductor

TRANSISTOR NPN RF BIPO 12V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,136

12V

2GHz

-

200W

25 @ 3mA, 1V

50mA

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

AT-41511-TR2G

Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
Gain: 11dB ~ 15.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

패키지: TO-253-4, TO-253AA

재고2,704

12V

-

1dB ~ 1.7dB @ 900MHz ~ 2.4GHz

11dB ~ 15.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

NE68519-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 11dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고5,296

6V

12GHz

1.5dB @ 2GHz

11dB

125mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SOT-523

MMBT5770

Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고432,000

15V

600MHz

-

225mW

30 @ 3mA, 1V

10mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

KSC2756YMTF

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 30MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 850MHz
Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
Gain: 15dB ~ 23dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,088,000

20V

850MHz

6.5dB @ 200MHz

15dB ~ 23dB

150mW

120 @ 5mA, 10V

30mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

UPA800T-T1-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 7.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고22,512

10V

8GHz

1.9dB @ 2GHz

7.5dB

200mW

80 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BFG540W,115

NXP

TRANS RF NPN 15V 9GHZ SOT343N

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343 Reverse Pinning
Supplier Device Package: 4-SO

패키지: SOT-343 Reverse Pinning

재고5,312

15V

9GHz

1.3dB ~ 1.8dB @ 900MHz

-

500mW

100 @ 40mA, 8V

120mA

175°C (TJ)

Surface Mount

SOT-343 Reverse Pinning

4-SO

BFR360FH6765XTSA1

Infineon Technologies

TRANS RF NPN 6V 35MA TSFP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

패키지: SOT-723

재고5,824

9V

14GHz

1dB @ 1.8GHz

15.5dB

210mW

90 @ 15mA, 3V

35mA

150°C (TJ)

Surface Mount

SOT-723

PG-TSFP-3

DME500

Microsemi Corporation

TRANS RF BIPO 1700W 40A 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6dB ~ 6.5dB
Power - Max: 1700W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

패키지: 55KT

재고5,776

55V

1.025GHz ~ 1.15GHz

-

6dB ~ 6.5dB

1700W

10 @ 500mA, 5V

40A

200°C (TJ)

Chassis Mount

55KT

BFU530XVL

NXP

TRANS RF NPN 12V 40MA SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 16.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고7,888

12V

11GHz

1.1dB @ 1.8GHz

16.5dB

450mW

60 @ 10mA, 8V

40mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

BFT25,215

NXP

TRANS RF NPN 5V 2.3GHZ SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): 5.5dB @ 500MHz
Gain: -
Power - Max: 30mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 1V
Current - Collector (Ic) (Max): 6.5mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고4,736

5V

2.3GHz

5.5dB @ 500MHz

-

30mW

20 @ 1mA, 1V

6.5mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFG403W,115

NXP

TRANS NPN 4.5V 17GHZ SOT343R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 17GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2GHz
Gain: 20dB ~ 22dB
Power - Max: 16mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3mA, 2V
Current - Collector (Ic) (Max): 3.6mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

패키지: SC-82A, SOT-343

재고2,208

4.5V

17GHz

1dB ~ 1.6dB @ 900MHz ~ 2GHz

20dB ~ 22dB

16mW

50 @ 3mA, 2V

3.6mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

MRF422

M/A-Com Technology Solutions

TRANS RF NPN 35V 20A 211-11

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 150W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 211-11, Style 2
Supplier Device Package: 211-11, Style 2

패키지: 211-11, Style 2

재고6,252

35V

-

13dB

150W

15 @ 5A, 5V

20A

-

Chassis Mount

211-11, Style 2

2N5179

Central Semiconductor Corp

TRANS NPN 12V 0.05A TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Gain: 15dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: TO-206AF, TO-72-4 Metal Can

재고17,928

12V

2GHz

4.5dB @ 200MHz

15dB

200mW

25 @ 3mA, 1V

50mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

2SC5066-O,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: SC-75, SOT-416

재고22,500

12V

7GHz

1dB @ 500MHz

-

100mW

80 @ 10mA, 5V

30mA

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

BFU550R

NXP

TRANS RF NPN 12V 50MA SOT-143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
Gain: 21dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고90,948

12V

11GHz

0.7dB @ 900MHz

21dB

450mW

60 @ 15mA, 8V

50mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

MRFC544

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MS1701

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

PH9034

MACOM Technology Solutions

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CP616-2N5160-WN

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

40V

500MHz

-

10 @ 50mA, 5V

400mA

-65°C ~ 150°C (TJ)

Surface Mount

Die