페이지 56 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MRF553T	Microsemi Corporation	TRANS NPN 16V 500MA POWERMACRO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 11.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	패키지: Power Macro	재고6,080	16V	175MHz	-	11.5dB	3W	30 @ 250mA, 5V	500mA	-	Surface Mount	Power Macro	Power Macro
MS1202	Microsemi Corporation	TRANS RF BIPO 15W 1A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 118MHz ~ 136MHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 15W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M135 Supplier Device Package: M135	패키지: M135	재고3,120	35V	118MHz ~ 136MHz	-	8.4dB	15W	5 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	M135	M135
NE66219-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 21GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 14dB Power - Max: 115mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고36,000	3.3V	21GHz	1.2dB @ 2GHz	14dB	115mW	60 @ 5mA, 2V	35mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
MRF555	Microsemi Corporation	TRANS NPN 16V 500MA POWERMACRO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 11dB ~ 13dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	패키지: Power Macro	재고7,664	16V	-	-	11dB ~ 13dB	3W	30 @ 250mA, 5V	500mA	-	Surface Mount	Power Macro	Power Macro
MSC3930-BT1	ON Semiconductor	TRANS NPN RF BIPO 20V SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	패키지: SC-70, SOT-323	재고360,000	20V	150MHz	-	-	200mW	70 @ 1mA, 10V	30mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
AT-41532-BLKG	Broadcom Limited	TRANS NPN BIPO 12V 50MA SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz Gain: 9dB ~ 15.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3	패키지: SC-70, SOT-323	재고2,032	12V	-	1dB ~ 1.9dB @ 900MHz ~ 2.4GHz	9dB ~ 15.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3
NESG2046M33-A	CEL	TRANS NPN 2GHZ M33 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 18GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.5dB @ 2GHz Gain: 9.5dB ~ 11.5dB Power - Max: 130mW DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SuperMiniMold (M33)	패키지: 3-SMD, Flat Leads	재고2,416	5V	18GHz	0.8dB ~ 1.5dB @ 2GHz	9.5dB ~ 11.5dB	130mW	140 @ 2mA, 1V	40mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SuperMiniMold (M33)
KSC1674RBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고7,104	20V	600MHz	3dB ~ 5dB @ 100MHz	-	250mW	40 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSC2757RMTF	Fairchild/ON Semiconductor	TRANSISTOR NPN 15V 50MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고1,548,000	15V	1.1GHz	-	-	150mW	60 @ 5mA, 10V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
NE68133-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고4,416	10V	9GHz	1.2dB @ 1GHz	13dB	200mW	50 @ 20mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC39320SL	Panasonic Electronic Components	TRANS NPN 20VCEO 50MA SMINI-3P Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.6GHz Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	패키지: SC-70, SOT-323	재고2,032	20V	1.6GHz	-	20dB	150mW	1000 @ 2mA, 10V	50mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SMini3-G1
BFG425W,115	NXP	TRANS NPN 4.5V 25GHZ SOT-343R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz Gain: 20dB Power - Max: 135mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	패키지: SC-82A, SOT-343	재고4,304	4.5V	25GHz	0.8dB ~ 1.2dB @ 900MHz ~ 2GHz	20dB	135mW	50 @ 25mA, 2V	30mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
BFR520,215	NXP	TRANS NPN 70MA 15V 9GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고3,232	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	300mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
PH3134-55L	M/A-Com Technology Solutions	TRANSISTOR BIPOLAR 3.10-3.40GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 55W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 6.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고5,104	65V	-	-	7.5dB	55W	-	6.5A	200°C (TJ)	Chassis Mount	-	-
15GN03CA-TB-E	ON Semiconductor	TRANS NPN BIPO 70MA 10V CP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz Gain: 13dB @ 0.4GHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	패키지: TO-236-3, SC-59, SOT-23-3	재고5,024	10V	1.5GHz	1.6dB @ 0.4GHz	13dB @ 0.4GHz	200mW	100 @ 10mA, 5V	70mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
HFA3102BZ	Intersil	IC TRANS ARRAY DUAL NPN 14-SOIC Transistor Type: 6 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz Gain: 12.4dB ~ 17.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고5,328	12V	10GHz	1.8dB ~ 2.1dB @ 500MHz ~ 1GHz	12.4dB ~ 17.5dB	250mW	40 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
CMPTH81 TR	Central Semiconductor Corp	TRANS PNP 20V 50MA SOT23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고2,880	20V	600MHz	-	-	225mW	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MMBTH24	Fairchild/ON Semiconductor	TRANSISTOR RF NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고37,908	30V	400MHz	-	-	225mW	30 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BFP740FESDH6327XTSA1	Infineon Technologies	TRANS RF NPN 42GHZ 4.7V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 47GHz Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz Gain: 9dB ~ 31dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: 4-SMD, Flat Leads	재고27,360	4.7V	47GHz	0.5dB ~ 1.45dB @ 150MHz ~ 10GHz	9dB ~ 31dB	160mW	160 @ 25mA, 3V	45mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
BFP540H6327XTSA1	Infineon Technologies	TRANS RF NPN 4.5V 80MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 16dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고142,932	5V	30GHz	0.9dB ~ 1.4dB @ 1.8GHz	16dB	250mW	50 @ 20mA, 3.5V	80mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
HFA3127BZ	Intersil	IC TRANSISTOR ARRAY UHF 16-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고6,336	12V	8GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
SD1372-01H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SA1461-T2B-A	Renesas Electronics Corporation	HIGH FREQUENCY PNP TRANSISTOR Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 510MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 1V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	패키지: -	Request a Quote	40V	510MHz	-	-	200mW	75 @ 10mA, 1V	200mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
MS1076C	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BFR193L3E6327XTMA1	Infineon Technologies	RF TRANS NPN 12V 8GHZ TSLP-3-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 12.5dB ~ 19dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-1	패키지: -	Request a Quote	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	12.5dB ~ 19dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3-1
NTE224	NTE Electronics, Inc	RF TRANS NPN 60V 300MHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 300MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 2A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-39 W/flange Supplier Device Package: TO-39 W/flange	패키지: -	Request a Quote	60V	300MHz	-	-	10W	10 @ 500mA, 5V	2A	175°C (TJ)	Through Hole	TO-39 W/flange	TO-39 W/flange
CP229-2N5109-WN	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: 11dB Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	20V	1.2GHz	3dB @ 200MHz	11dB	-	40 @ 50mA, 15V	400mA	-65°C ~ 200°C (TJ)	Surface Mount	Die	Die
MS2502A	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

MRF553T

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 11.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Power Macro
Supplier Device Package: Power Macro

패키지: Power Macro

재고6,080

16V

175MHz

-

11.5dB

3W

30 @ 250mA, 5V

500mA

-

Surface Mount

Power Macro

MS1202

Microsemi Corporation

TRANS RF BIPO 15W 1A M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 118MHz ~ 136MHz
Noise Figure (dB Typ @ f): -
Gain: 8.4dB
Power - Max: 15W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M135
Supplier Device Package: M135

패키지: M135

재고3,120

35V

118MHz ~ 136MHz

-

8.4dB

15W

5 @ 100mA, 5V

1A

200°C (TJ)

Chassis Mount

M135

NE66219-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 21GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 14dB
Power - Max: 115mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고36,000

3.3V

21GHz

1.2dB @ 2GHz

14dB

115mW

60 @ 5mA, 2V

35mA

150°C (TJ)

Surface Mount

SOT-523

MRF555

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 11dB ~ 13dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Power Macro
Supplier Device Package: Power Macro

패키지: Power Macro

재고7,664

16V

-

11dB ~ 13dB

3W

30 @ 250mA, 5V

500mA

-

Surface Mount

Power Macro

MSC3930-BT1

ON Semiconductor

TRANS NPN RF BIPO 20V SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

패키지: SC-70, SOT-323

재고360,000

20V

150MHz

-

200mW

70 @ 1mA, 10V

30mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

AT-41532-BLKG

Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
Gain: 9dB ~ 15.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3

패키지: SC-70, SOT-323

재고2,032

12V

-

1dB ~ 1.9dB @ 900MHz ~ 2.4GHz

9dB ~ 15.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3

NESG2046M33-A

CEL

TRANS NPN 2GHZ M33

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 18GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.5dB @ 2GHz
Gain: 9.5dB ~ 11.5dB
Power - Max: 130mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SuperMiniMold (M33)

패키지: 3-SMD, Flat Leads

재고2,416

5V

18GHz

0.8dB ~ 1.5dB @ 2GHz

9.5dB ~ 11.5dB

130mW

140 @ 2mA, 1V

40mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-SuperMiniMold (M33)

KSC1674RBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고7,104

20V

600MHz

3dB ~ 5dB @ 100MHz

-

250mW

40 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSC2757RMTF

Fairchild/ON Semiconductor

TRANSISTOR NPN 15V 50MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고1,548,000

15V

1.1GHz

-

150mW

60 @ 5mA, 10V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

NE68133-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고4,416

10V

9GHz

1.2dB @ 1GHz

13dB

200mW

50 @ 20mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SC39320SL

Panasonic Electronic Components

TRANS NPN 20VCEO 50MA SMINI-3P

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.6GHz
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

패키지: SC-70, SOT-323

재고2,032

20V

1.6GHz

-

20dB

150mW

1000 @ 2mA, 10V

50mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SMini3-G1

BFG425W,115

NXP

TRANS NPN 4.5V 25GHZ SOT-343R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain: 20dB
Power - Max: 135mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

패키지: SC-82A, SOT-343

재고4,304

4.5V

25GHz

0.8dB ~ 1.2dB @ 900MHz ~ 2GHz

20dB

135mW

50 @ 25mA, 2V

30mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

BFR520,215

NXP

TRANS NPN 70MA 15V 9GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고3,232

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

300mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

PH3134-55L

M/A-Com Technology Solutions

TRANSISTOR BIPOLAR 3.10-3.40GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 7.5dB
Power - Max: 55W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 6.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,104

65V

-

7.5dB

55W

-

6.5A

200°C (TJ)

Chassis Mount

-

15GN03CA-TB-E

ON Semiconductor

TRANS NPN BIPO 70MA 10V CP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Gain: 13dB @ 0.4GHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

패키지: TO-236-3, SC-59, SOT-23-3

재고5,024

10V

1.5GHz

1.6dB @ 0.4GHz

13dB @ 0.4GHz

200mW

100 @ 10mA, 5V

70mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

HFA3102BZ

Intersil

IC TRANS ARRAY DUAL NPN 14-SOIC

Transistor Type: 6 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
Gain: 12.4dB ~ 17.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고5,328

12V

10GHz

1.8dB ~ 2.1dB @ 500MHz ~ 1GHz

12.4dB ~ 17.5dB

250mW

40 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

CMPTH81 TR

Central Semiconductor Corp

TRANS PNP 20V 50MA SOT23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고2,880

20V

600MHz

-

225mW

60 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MMBTH24

Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고37,908

30V

400MHz

-

225mW

30 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BFP740FESDH6327XTSA1

Infineon Technologies

TRANS RF NPN 42GHZ 4.7V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Gain: 9dB ~ 31dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

재고27,360

4.7V

47GHz

0.5dB ~ 1.45dB @ 150MHz ~ 10GHz

9dB ~ 31dB

160mW

160 @ 25mA, 3V

45mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

BFP540H6327XTSA1

Infineon Technologies

TRANS RF NPN 4.5V 80MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Gain: 16dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고142,932

5V

30GHz

0.9dB ~ 1.4dB @ 1.8GHz

16dB

250mW

50 @ 20mA, 3.5V

80mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

HFA3127BZ

Intersil

IC TRANSISTOR ARRAY UHF 16-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고6,336

12V

8GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

SD1372-01H

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SA1461-T2B-A

Renesas Electronics Corporation

HIGH FREQUENCY PNP TRANSISTOR

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 510MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 1V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

패키지: -

Request a Quote

40V

510MHz

-

200mW

75 @ 10mA, 1V

200mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

MS1076C

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BFR193L3E6327XTMA1

Infineon Technologies

RF TRANS NPN 12V 8GHZ TSLP-3-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 12.5dB ~ 19dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1

패키지: -

Request a Quote

12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

12.5dB ~ 19dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3-1

NTE224

NTE Electronics, Inc

RF TRANS NPN 60V 300MHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 300MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 2A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-39 W/flange
Supplier Device Package: TO-39 W/flange

패키지: -

Request a Quote

60V

300MHz

-

10W

10 @ 500mA, 5V

2A

175°C (TJ)

Through Hole

TO-39 W/flange

CP229-2N5109-WN

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: 11dB
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

20V

1.2GHz

3dB @ 200MHz

11dB

-

40 @ 50mA, 15V

400mA

-65°C ~ 200°C (TJ)

Surface Mount

Die

MS2502A

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-