페이지 54 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NE46134-T1-QS-AZ	CEL	SAME AS 2SC4536 NPN SILICON MEDI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 7dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고5,152	15V	5.5GHz	1.5dB ~ 2dB @ 500MHz ~ 1GHz	7dB	2W	40 @ 50mA, 10V	250mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SA1978-T1B-A	CEL	RF TRANSISTOR PNP SOT-23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 2dB @ 1GHz Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고36,000	12V	5.5GHz	2dB @ 1GHz	10dB	200mW	20 @ 15mA, 10V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE68030-T1-R44-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 9.4dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고3,344	10V	10GHz	1.9dB @ 2GHz	9.4dB	150mW	80 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
PN5179_D75Z	Fairchild/ON Semiconductor	TRANS RF NPN 12V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 5dB @ 200MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,864	12V	2GHz	5dB @ 200MHz	15dB	350mW	25 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SC3931GCL	Panasonic Electronic Components	TRANS NPN 20VCEO 15MA S-MINI 3P Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3.3dB @ 100MHz Gain: 24dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	패키지: SC-85	재고4,178,364	20V	650MHz	3.3dB @ 100MHz	24dB	150mW	65 @ 1mA, 6V	15mA	150°C (TJ)	Surface Mount	SC-85	SMini3-F2
KSC1393YTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 30V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz Gain: 20dB ~ 24dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,752	30V	700MHz	2dB ~ 3dB @ 200MHz	20dB ~ 24dB	250mW	90 @ 2mA, 10V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
SD1405	STMicroelectronics	TRANS NPN RF MCRWAVE HF SSB M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M174 Supplier Device Package: M174	패키지: M174	재고3,232	18V	-	-	13dB	270W	20 @ 5A, 5V	20A	200°C (TJ)	Surface Mount	M174	M174
2N5770_D74Z	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 15V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,808	15V	-	6dB @ 60MHz	15dB	350mW	50 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
NE68530-T1-A	CEL	TRANSISTOR NPN 2GHZ SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz Gain: 7dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고36,000	6V	12GHz	1.5dB ~ 2.5dB @ 2GHz	7dB	150mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
NE68139-T1	CEL	TRANS NPN 1GHZ SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz Gain: 13.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	패키지: TO-253-4, TO-253AA	재고3,840	10V	9GHz	1.2dB ~ 2dB @ 1GHz	13.5dB	200mW	50 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
NE68119-T1	CEL	TRANS NPN 1GHZ SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB ~ 1.8dB @ 1GHz ~ 2GHz Gain: 10dB ~ 14dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: 3-SuperMiniMold (19)	패키지: SOT-523	재고3,488	10V	7GHz	1.4dB ~ 1.8dB @ 1GHz ~ 2GHz	10dB ~ 14dB	100mW	80 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SOT-523	3-SuperMiniMold (19)
NE68019-T1	CEL	TRANS NPN 2GHZ SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.7dB ~ 1.9dB @ 1GHz ~ 2GHz Gain: 9.6dB ~ 13.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고7,360	10V	10GHz	1.7dB ~ 1.9dB @ 1GHz ~ 2GHz	9.6dB ~ 13.5dB	100mW	80 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
BFG520/XR,215	NXP	TRANS RF NPN 9GHZ 15V SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고7,056	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	300mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	SOT-143R	SOT-143R
BFP720FESDH6327XTSA1	Infineon Technologies	TRANS RF NPN 45GHZ 4.7V TSFP-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz Gain: 10dB ~ 29dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: 4-SMD, Flat Leads	재고6,592	4.7V	45GHz	0.5dB ~ 1.3dB @ 150MHz ~ 10GHz	10dB ~ 29dB	100mW	160 @ 15mA, 3V	30mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
AT-32011-TR2G	Broadcom Limited	TRANS NPN BIPO 5.5V 32MA SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 12.5dB ~ 14dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	패키지: TO-253-4, TO-253AA	재고7,328	5.5V	-	1dB ~ 1.3dB @ 900MHz	12.5dB ~ 14dB	200mW	70 @ 2mA, 2.7V	32mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
BFU520WF	NXP	TRANS RF NPN 12V 30MA SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Gain: 13dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고7,792	12V	10GHz	1dB @ 1.8GHz	13dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
NSVF6003SB6T1G	ON Semiconductor	RF TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,288	-	-	-	-	-	-	-	-	-	-	-
2SC5488A-TL-H	ON Semiconductor	TRANS NPN BIPO VHF-UHF SSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SSFP	패키지: 3-SMD, Flat Leads	재고5,952	10V	7GHz	1dB @ 1GHz	12dB	100mW	90 @ 20mA, 5V	70mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SSFP
BFP 182 E7764	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	패키지: TO-253-4, TO-253AA	재고7,120	12V	8GHz	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	22dB	250mW	70 @ 10mA, 8V	35mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	PG-SOT143-4
2SC5632G0L	Panasonic Electronic Components	TRANS NPN 8VCEO 50MA SMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	패키지: SC-85	재고3,472	8V	1.1GHz	-	-	150mW	100 @ 2mA, 4V	50mA	150°C (TJ)	Surface Mount	SC-85	SMini3-F2
UPA804T-T1-A	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): - Gain: 5dB Power - Max: 120mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Current - Collector (Ic) (Max): 60mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SuperMiniMold	패키지: -	Request a Quote	12V	5GHz	-	5dB	120mW	60 @ 5mA, 5V	60mA	125°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-SuperMiniMold
NE85633-A	CEL	RF TRANS NPN 12V 7GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: - Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: -	패키지: -	Request a Quote	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	-	TO-236-3, SC-59, SOT-23-3	-
MS2248	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1332-05H	Microsemi Corporation	RF TRANS NPN 15V 5.5GHZ M150 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 2.5dB @ 1GHz Gain: 17dB Power - Max: 180W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 14mA, 10V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C Mounting Type: Surface Mount Package / Case: M150 Supplier Device Package: M150	패키지: -	Request a Quote	15V	5.5GHz	2.5dB @ 1GHz	17dB	180W	50 @ 14mA, 10V	30A	200°C	Surface Mount	M150	M150
2SC2839E-SPA-AC	onsemi	NPN EPITAXIAL PLANAR SILICON Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 320MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Gain: 25dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V Current - Collector (Ic) (Max): 30mA Operating Temperature: - Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: 3-SPA	패키지: -	Request a Quote	20V	320MHz	3dB @ 100MHz	25dB	150mW	60 @ 1mA, 6V	30mA	-	Through Hole	3-SIP	3-SPA
2SC4957-A	CEL	RF TRANS NPN 6V 12GHZ SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 11dB Power - Max: 180mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: -	패키지: -	Request a Quote	6V	12GHz	1.5dB @ 2GHz	11dB	180mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	-
NTE278	NTE Electronics, Inc	RF TRANS NPN 20V 1.2GHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: 11dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	20V	1.2GHz	3dB @ 200MHz	11dB	1W	40 @ 50mA, 15V	400mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MS2321A	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

NE46134-T1-QS-AZ

CEL

SAME AS 2SC4536 NPN SILICON MEDI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Gain: 7dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고5,152

15V

5.5GHz

1.5dB ~ 2dB @ 500MHz ~ 1GHz

7dB

2W

40 @ 50mA, 10V

250mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SA1978-T1B-A

CEL

RF TRANSISTOR PNP SOT-23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2dB @ 1GHz
Gain: 10dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고36,000

12V

5.5GHz

2dB @ 1GHz

10dB

200mW

20 @ 15mA, 10V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE68030-T1-R44-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 9.4dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고3,344

10V

10GHz

1.9dB @ 2GHz

9.4dB

150mW

80 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

PN5179_D75Z

Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,864

12V

2GHz

5dB @ 200MHz

15dB

350mW

25 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SC3931GCL

Panasonic Electronic Components

TRANS NPN 20VCEO 15MA S-MINI 3P

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
Gain: 24dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2

패키지: SC-85

재고4,178,364

20V

650MHz

3.3dB @ 100MHz

24dB

150mW

65 @ 1mA, 6V

15mA

150°C (TJ)

Surface Mount

SC-85

SMini3-F2

KSC1393YTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
Gain: 20dB ~ 24dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 10V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,752

30V

700MHz

2dB ~ 3dB @ 200MHz

20dB ~ 24dB

250mW

90 @ 2mA, 10V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

SD1405

STMicroelectronics

TRANS NPN RF MCRWAVE HF SSB M174

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: M174
Supplier Device Package: M174

패키지: M174

재고3,232

18V

-

13dB

270W

20 @ 5A, 5V

20A

200°C (TJ)

Surface Mount

M174

2N5770_D74Z

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 15V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,808

15V

-

6dB @ 60MHz

15dB

350mW

50 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

NE68530-T1-A

CEL

TRANSISTOR NPN 2GHZ SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: 7dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고36,000

6V

12GHz

1.5dB ~ 2.5dB @ 2GHz

7dB

150mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

NE68139-T1

CEL

TRANS NPN 1GHZ SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz
Gain: 13.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

패키지: TO-253-4, TO-253AA

재고3,840

10V

9GHz

1.2dB ~ 2dB @ 1GHz

13.5dB

200mW

50 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

NE68119-T1

CEL

TRANS NPN 1GHZ SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 1.8dB @ 1GHz ~ 2GHz
Gain: 10dB ~ 14dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: 3-SuperMiniMold (19)

패키지: SOT-523

재고3,488

10V

7GHz

1.4dB ~ 1.8dB @ 1GHz ~ 2GHz

10dB ~ 14dB

100mW

80 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SOT-523

3-SuperMiniMold (19)

NE68019-T1

CEL

TRANS NPN 2GHZ SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 1.9dB @ 1GHz ~ 2GHz
Gain: 9.6dB ~ 13.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고7,360

10V

10GHz

1.7dB ~ 1.9dB @ 1GHz ~ 2GHz

9.6dB ~ 13.5dB

100mW

80 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SOT-523

BFG520/XR,215

NXP

TRANS RF NPN 9GHZ 15V SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

패키지: SOT-143R

재고7,056

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

300mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

SOT-143R

BFP720FESDH6327XTSA1

Infineon Technologies

TRANS RF NPN 45GHZ 4.7V TSFP-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
Gain: 10dB ~ 29dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

재고6,592

4.7V

45GHz

0.5dB ~ 1.3dB @ 150MHz ~ 10GHz

10dB ~ 29dB

100mW

160 @ 15mA, 3V

30mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

AT-32011-TR2G

Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 12.5dB ~ 14dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

패키지: TO-253-4, TO-253AA

재고7,328

5.5V

-

1dB ~ 1.3dB @ 900MHz

12.5dB ~ 14dB

200mW

70 @ 2mA, 2.7V

32mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

BFU520WF

NXP

TRANS RF NPN 12V 30MA SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 13dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고7,792

12V

10GHz

1dB @ 1.8GHz

13dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

NSVF6003SB6T1G

ON Semiconductor

RF TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,288

-

2SC5488A-TL-H

ON Semiconductor

TRANS NPN BIPO VHF-UHF SSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SSFP

패키지: 3-SMD, Flat Leads

재고5,952

10V

7GHz

1dB @ 1GHz

12dB

100mW

90 @ 20mA, 5V

70mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-SSFP

BFP 182 E7764

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4

패키지: TO-253-4, TO-253AA

재고7,120

12V

8GHz

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

22dB

250mW

70 @ 10mA, 8V

35mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

PG-SOT143-4

2SC5632G0L

Panasonic Electronic Components

TRANS NPN 8VCEO 50MA SMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2

패키지: SC-85

재고3,472

8V

1.1GHz

-

150mW

100 @ 2mA, 4V

50mA

150°C (TJ)

Surface Mount

SC-85

SMini3-F2

UPA804T-T1-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): -
Gain: 5dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-SuperMiniMold

패키지: -

Request a Quote

12V

5GHz

-

5dB

120mW

60 @ 5mA, 5V

60mA

125°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-SuperMiniMold

NE85633-A

CEL

RF TRANS NPN 12V 7GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: -
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: -

패키지: -

Request a Quote

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

-

TO-236-3, SC-59, SOT-23-3

-

MS2248

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SD1332-05H

Microsemi Corporation

RF TRANS NPN 15V 5.5GHZ M150

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2.5dB @ 1GHz
Gain: 17dB
Power - Max: 180W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 14mA, 10V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 200°C
Mounting Type: Surface Mount
Package / Case: M150
Supplier Device Package: M150

패키지: -

Request a Quote

15V

5.5GHz

2.5dB @ 1GHz

17dB

180W

50 @ 14mA, 10V

30A

200°C

Surface Mount

M150

2SC2839E-SPA-AC

onsemi

NPN EPITAXIAL PLANAR SILICON

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 320MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Gain: 25dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: 3-SPA

패키지: -

Request a Quote

20V

320MHz

3dB @ 100MHz

25dB

150mW

60 @ 1mA, 6V

30mA

-

Through Hole

3-SIP

3-SPA

2SC4957-A

CEL

RF TRANS NPN 6V 12GHZ SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 11dB
Power - Max: 180mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: -

패키지: -

Request a Quote

6V

12GHz

1.5dB @ 2GHz

11dB

180mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

-

NTE278

NTE Electronics, Inc

RF TRANS NPN 20V 1.2GHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: 11dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

20V

1.2GHz

3dB @ 200MHz

11dB

1W

40 @ 50mA, 15V

400mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MS2321A

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-