페이지 630 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BCP 69-16 E6327	Infineon Technologies	TRANS PNP 20V 1A SOT-223 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Power - Max: 3W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	패키지: TO-261-4, TO-261AA	재고5,040	1A	20V	500mV @ 100mA, 1A	100nA (ICBO)	100 @ 500mA, 1V	3W	100MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
2SC4489T-AN	ON Semiconductor	TRANS NPN 100V 2A NMP Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: 3-NMP	패키지: SC-71	재고3,440	2A	100V	400mV @ 100mA, 1A	100nA (ICBO)	200 @ 100mA, 5V	1W	120MHz	150°C (TJ)	Through Hole	SC-71	3-NMP
2N6517RLRP	ON Semiconductor	TRANS NPN 350V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,872	500mA	350V	1V @ 5mA, 50mA	50nA (ICBO)	20 @ 50mA, 10V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSA1242YTU	Fairchild/ON Semiconductor	TRANS PNP 20V 5A I-PAK Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-Pak	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고6,352	5A	20V	1V @ 100mA, 4A	100µA (ICBO)	160 @ 500mA, 2V	10W	180MHz	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-Pak
2N5086TF	Fairchild/ON Semiconductor	TRANS PNP 50V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100µA, 5V Power - Max: 625mW Frequency - Transition: 40MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,920	100mA	50V	300mV @ 1mA, 10mA	50nA	150 @ 100µA, 5V	625mW	40MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PN2369A	Fairchild/ON Semiconductor	TRANS NPN 15V 0.2A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고2,688	200mA	15V	500mV @ 10mA, 100mA	400nA (ICBO)	40 @ 10mA, 1V	350mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC817K25E6433HTMA1	Infineon Technologies	TRANS NPN 45V 0.5A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 500mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고5,216	500mA	45V	700mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	500mW	170MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
JAN2N918UB	Microsemi Corporation	TRANS NPN 15V 0.05A TO72 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Power - Max: 200mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Non-Standard Supplier Device Package: -	패키지: 3-SMD, Non-Standard	재고7,296	50mA	15V	400mV @ 1mA, 10mA	1µA (ICBO)	20 @ 3mA, 1V	200mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, Non-Standard	-
CPH6102-TL-E	ON Semiconductor	TRANS PNP 50V 1A CPH6 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1.3W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-CPH	패키지: SC-74, SOT-457	재고2,528	1A	50V	500mV @ 50mA, 500mA	100nA (ICBO)	200 @ 100mA, 2V	1.3W	150MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	6-CPH
BC548A A1G	TSC America Inc.	TRANSISTOR, NPN, 30V, 0.1A, 110A Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,328	100mA	30V	-	15nA (ICBO)	110 @ 2mA, 5V	500mW	-	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
TIP107	STMicroelectronics	TRANS PNP DARL 100V 8A TO-220 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고179,568	8A	100V	2.5V @ 80mA, 8A	50µA	1000 @ 3A, 4V	2W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
KSC2073H2TU	Fairchild/ON Semiconductor	TRANS NPN 150V 1.5A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 10V Power - Max: 25W Frequency - Transition: 4MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고9,720	1.5A	150V	1V @ 50mA, 500mA	10µA (ICBO)	60 @ 500mA, 10V	25W	4MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
NSS35200MR6T1G	ON Semiconductor	TRANS PNP 35V 2A TSOP-6 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 35V Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6	재고647,724	2A	35V	310mV @ 20mA, 2A	100nA	100 @ 1.5A, 1.5V	625mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	6-TSOP
MMSTA28T146	Rohm Semiconductor	TRANS NPN 80V 0.3A SMT3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: TO-236-3, SC-59, SOT-23-3	재고20,400	300mA	80V	1.5V @ 100µA, 100mA	500nA	10000 @ 100mA, 5V	200mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
KSC2690AYS	Fairchild/ON Semiconductor	TRANS NPN 160V 1.2A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V Power - Max: 1.2W Frequency - Transition: 155MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	패키지: TO-225AA, TO-126-3	재고19,872	1.2A	160V	700mV @ 200mA, 1A	1µA (ICBO)	35 @ 5mA, 5V	1.2W	155MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
2SA2088T106Q	Rohm Semiconductor	TRANS PNP 60V 0.5A SOT-323 TR Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Power - Max: 200mW Frequency - Transition: 400MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: SC-70, SOT-323	재고1,167,096	500mA	60V	500mV @ 10mA, 100mA	1µA (ICBO)	120 @ 50mA, 2V	200mW	400MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	UMT3
BCW68GLT1G	ON Semiconductor	TRANS PNP 45V 0.8A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Power - Max: 225mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고1,062,480	800mA	45V	1.5V @ 30mA, 300mA	20nA	120 @ 10mA, 1V	225mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
FZT851TA	Diodes Incorporated	TRANS NPN 60V 6A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 375mV @ 300mA, 6A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Power - Max: 3W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고590,316	6A	60V	375mV @ 300mA, 6A	50nA (ICBO)	100 @ 2A, 1V	3W	130MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
NTE2697	NTE Electronics, Inc	TRANS NPN 120V 7A TO220 Transistor Type: NPN Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V Power - Max: 50 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: -	Request a Quote	7 A	120 V	500mV @ 300mA, 3A	100µA (ICBO)	100 @ 3A, 4V	50 W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220
SBC807-40LT3	onsemi	TRANS PNP 45V 0.5A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 300 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: -	Request a Quote	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	250 @ 100mA, 1V	300 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
SSTA56HZGT116	Rohm Semiconductor	TRANS PNP 80V 0.5A SST3 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 200 mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: -	재고18	500 mA	80 V	250mV @ 10mA, 100mA	100nA (ICBO)	100 @ 10mA, 1V	200 mW	50MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
JANTX2N3501U4	Microchip Technology	TRANS NPN 150V 0.3A U4 Transistor Type: NPN Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	패키지: -	Request a Quote	300 mA	150 V	400mV @ 15mA, 150mA	50nA (ICBO)	100 @ 150mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
JANS2N2484UBC	Microchip Technology	TRANS NPN 60V 0.05A UB Transistor Type: NPN Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Power - Max: 360 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	50 mA	60 V	300mV @ 100µA, 1mA	2nA	250 @ 1mA, 5V	360 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB
2SA1208T	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 160 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V Power - Max: 900 mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: 3-MP	패키지: -	Request a Quote	70 mA	160 V	400mV @ 3mA, 30mA	100nA (ICBO)	200 @ 10mA, 5V	900 mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	3-MP
2N5575	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N3506L	Microchip Technology	NPN POWER SILICON TRANSISTORS Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	3 A	40 V	1.5V @ 250mA, 2.5A	1µA	50 @ 500mA, 1V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
BC856AWHE3-TP	Micro Commercial Co	PNP TRANSISTORS, SOT-323 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Power - Max: 150 mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	재고17,850	100 mA	65 V	650mV @ 5mA, 100mA	100nA (ICBO)	125 @ 2mA, 5V	150 mW	100MHz	-65°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2SC3950D	onsemi	POWER BIPOLAR TRANSISTOR NPN Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 800mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Power - Max: 1.3 W Frequency - Transition: 2GHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126ML	패키지: -	Request a Quote	500 mA	20 V	800mV @ 30mA, 300mA	100nA (ICBO)	60 @ 50mA, 5V	1.3 W	2GHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126ML

BCP 69-16 E6327

Infineon Technologies

TRANS PNP 20V 1A SOT-223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Power - Max: 3W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

재고5,040

1A

20V

500mV @ 100mA, 1A

100nA (ICBO)

100 @ 500mA, 1V

3W

100MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

2SC4489T-AN

ON Semiconductor

TRANS NPN 100V 2A NMP

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: 3-NMP

패키지: SC-71

재고3,440

2A

100V

400mV @ 100mA, 1A

100nA (ICBO)

200 @ 100mA, 5V

1W

120MHz

150°C (TJ)

Through Hole

SC-71

3-NMP

2N6517RLRP

ON Semiconductor

TRANS NPN 350V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,872

500mA

350V

1V @ 5mA, 50mA

50nA (ICBO)

20 @ 50mA, 10V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSA1242YTU

Fairchild/ON Semiconductor

TRANS PNP 20V 5A I-PAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Power - Max: 10W
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-Pak

패키지: TO-251-3 Short Leads, IPak, TO-251AA

재고6,352

5A

20V

1V @ 100mA, 4A

100µA (ICBO)

160 @ 500mA, 2V

10W

180MHz

150°C (TJ)

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-Pak

2N5086TF

Fairchild/ON Semiconductor

TRANS PNP 50V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100µA, 5V
Power - Max: 625mW
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,920

100mA

50V

300mV @ 1mA, 10mA

50nA

150 @ 100µA, 5V

625mW

40MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

PN2369A

Fairchild/ON Semiconductor

TRANS NPN 15V 0.2A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고2,688

200mA

15V

500mV @ 10mA, 100mA

400nA (ICBO)

40 @ 10mA, 1V

350mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BC817K25E6433HTMA1

Infineon Technologies

TRANS NPN 45V 0.5A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 500mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고5,216

500mA

45V

700mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

500mW

170MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

JAN2N918UB

Microsemi Corporation

TRANS NPN 15V 0.05A TO72

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Power - Max: 200mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Non-Standard
Supplier Device Package: -

패키지: 3-SMD, Non-Standard

재고7,296

50mA

15V

400mV @ 1mA, 10mA

1µA (ICBO)

20 @ 3mA, 1V

200mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, Non-Standard

-

CPH6102-TL-E

ON Semiconductor

TRANS PNP 50V 1A CPH6

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 1.3W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-CPH

패키지: SC-74, SOT-457

재고2,528

1A

50V

500mV @ 50mA, 500mA

100nA (ICBO)

200 @ 100mA, 2V

1.3W

150MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

6-CPH

BC548A A1G

TSC America Inc.

TRANSISTOR, NPN, 30V, 0.1A, 110A

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,328

100mA

30V

-

15nA (ICBO)

110 @ 2mA, 5V

500mW

-

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92

TIP107

STMicroelectronics

TRANS PNP DARL 100V 8A TO-220

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고179,568

8A

100V

2.5V @ 80mA, 8A

50µA

1000 @ 3A, 4V

2W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

KSC2073H2TU

Fairchild/ON Semiconductor

TRANS NPN 150V 1.5A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 10V
Power - Max: 25W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고9,720

1.5A

150V

1V @ 50mA, 500mA

10µA (ICBO)

60 @ 500mA, 10V

25W

4MHz

150°C (TJ)

Through Hole

TO-220-3

NSS35200MR6T1G

ON Semiconductor

TRANS PNP 35V 2A TSOP-6

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 35V
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6

재고647,724

2A

35V

310mV @ 20mA, 2A

100nA

100 @ 1.5A, 1.5V

625mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

6-TSOP

MMSTA28T146

Rohm Semiconductor

TRANS NPN 80V 0.3A SMT3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

재고20,400

300mA

80V

1.5V @ 100µA, 100mA

500nA

10000 @ 100mA, 5V

200mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

KSC2690AYS

Fairchild/ON Semiconductor

TRANS NPN 160V 1.2A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Power - Max: 1.2W
Frequency - Transition: 155MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

패키지: TO-225AA, TO-126-3

재고19,872

1.2A

160V

700mV @ 200mA, 1A

1µA (ICBO)

35 @ 5mA, 5V

1.2W

155MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

2SA2088T106Q

Rohm Semiconductor

TRANS PNP 60V 0.5A SOT-323 TR

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Power - Max: 200mW
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: SC-70, SOT-323

재고1,167,096

500mA

60V

500mV @ 10mA, 100mA

1µA (ICBO)

120 @ 50mA, 2V

200mW

400MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

UMT3

BCW68GLT1G

ON Semiconductor

TRANS PNP 45V 0.8A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Power - Max: 225mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고1,062,480

800mA

45V

1.5V @ 30mA, 300mA

20nA

120 @ 10mA, 1V

225mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

FZT851TA

Diodes Incorporated

TRANS NPN 60V 6A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 375mV @ 300mA, 6A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Power - Max: 3W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고590,316

6A

60V

375mV @ 300mA, 6A

50nA (ICBO)

100 @ 2A, 1V

3W

130MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

NTE2697

NTE Electronics, Inc

TRANS NPN 120V 7A TO220

Transistor Type: NPN
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Power - Max: 50 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: -

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7 A

120 V

500mV @ 300mA, 3A

100µA (ICBO)

100 @ 3A, 4V

50 W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220

SBC807-40LT3

onsemi

TRANS PNP 45V 0.5A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 300 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: -

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500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

250 @ 100mA, 1V

300 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

SSTA56HZGT116

Rohm Semiconductor

TRANS PNP 80V 0.5A SST3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 200 mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: -

재고18

500 mA

80 V

250mV @ 10mA, 100mA

100nA (ICBO)

100 @ 10mA, 1V

200 mW

50MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

JANTX2N3501U4

Microchip Technology

TRANS NPN 150V 0.3A U4

Transistor Type: NPN
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

패키지: -

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300 mA

150 V

400mV @ 15mA, 150mA

50nA (ICBO)

100 @ 150mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

JANS2N2484UBC

Microchip Technology

TRANS NPN 60V 0.05A UB

Transistor Type: NPN
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Power - Max: 360 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

패키지: -

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50 mA

60 V

300mV @ 100µA, 1mA

2nA

250 @ 1mA, 5V

360 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB

2SA1208T

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Power - Max: 900 mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: 3-MP

패키지: -

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70 mA

160 V

400mV @ 3mA, 30mA

100nA (ICBO)

200 @ 10mA, 5V

900 mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

3-MP

2N5575

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N3506L

Microchip Technology

NPN POWER SILICON TRANSISTORS

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

Request a Quote

3 A

40 V

1.5V @ 250mA, 2.5A

1µA

50 @ 500mA, 1V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

BC856AWHE3-TP

Micro Commercial Co

PNP TRANSISTORS, SOT-323

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 150 mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

재고17,850

100 mA

65 V

650mV @ 5mA, 100mA

100nA (ICBO)

125 @ 2mA, 5V

150 mW

100MHz

-65°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2SC3950D

onsemi

POWER BIPOLAR TRANSISTOR NPN

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Power - Max: 1.3 W
Frequency - Transition: 2GHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126ML

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500 mA

20 V

800mV @ 30mA, 300mA

100nA (ICBO)

60 @ 50mA, 5V

1.3 W

2GHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126ML