페이지 631 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SA2125-S-TD-H	ON Semiconductor	TRANS PNP 50V 3A Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 3.5W Frequency - Transition: 390MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	패키지: TO-243AA	재고5,088	3A	50V	500mV @ 100mA, 2A	1µA (ICBO)	200 @ 100mA, 2V	3.5W	390MHz	-	Surface Mount	TO-243AA	PCP
BDW24C-S	Bourns Inc.	TRANS PNP DARL 100V 6A Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 60mA, 6A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고7,728	6A	100V	3V @ 60mA, 6A	500µA	750 @ 2A, 3V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
2SC1741STPQ	Rohm Semiconductor	TRANS NPN 32V 0.5A SPT Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	패키지: SC-72 Formed Leads	재고60,000	500mA	32V	600mV @ 50mA, 500mA	1µA (ICBO)	120 @ 100mA, 3V	300mW	250MHz	150°C (TJ)	Through Hole	SC-72 Formed Leads	SPT
2SB1241TV2R	Rohm Semiconductor	TRANS PNP 80V 1A ATV Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: ATV	패키지: 3-SIP	재고30,000	1A	80V	400mV @ 50mA, 500mA	1µA (ICBO)	180 @ 100mA, 3V	1W	100MHz	150°C (TJ)	Through Hole	3-SIP	ATV
KSD882YSTSSTU	Fairchild/ON Semiconductor	TRANS NPN 30V 3A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Power - Max: 1W Frequency - Transition: 90MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	패키지: TO-225AA, TO-126-3	재고6,992	3A	30V	500mV @ 200mA, 2A	1µA (ICBO)	160 @ 1A, 2V	1W	90MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
FJX1182OTF	Fairchild/ON Semiconductor	TRANS PNP 30V 0.5A SOT-323 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고5,232	500mA	30V	250mV @ 10mA, 100mA	100nA (ICBO)	70 @ 100mA, 1V	150mW	200MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
KST5088MTF	Fairchild/ON Semiconductor	TRANS NPN 30V 0.05A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V Power - Max: 350mW Frequency - Transition: 50MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고864,000	50mA	30V	500mV @ 1mA, 10mA	50nA (ICBO)	300 @ 100µA, 5V	350mW	50MHz	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2N1711	STMicroelectronics	TRANS NPN 50V 0.5A TO-39 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V Power - Max: 800mW Frequency - Transition: 100MHz Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고7,840	500mA	50V	1.5V @ 15mA, 150mA	10nA (ICBO)	35 @ 100mA, 10V	800mW	100MHz	175°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
JAN2N3792	Microsemi Corporation	TRANS PNP 80V 10A TO-3 Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V Power - Max: 5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3 (TO-204AA)	패키지: TO-3	재고15,300	10A	80V	2.5V @ 2A, 10A	5mA	30 @ 3A, 2V	5W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-3	TO-3 (TO-204AA)
JAN2N6306	Microsemi Corporation	TRANS NPN 250V 8A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 5V Power - Max: 125W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3)	패키지: TO-204AA, TO-3	재고7,296	8A	250V	5V @ 2A, 8A	50µA	15 @ 3A, 5V	125W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-204AA (TO-3)
NJVNJD35N04G	ON Semiconductor	TRANS NPN DARL 350V 4A DPAK-4 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Power - Max: 45W Frequency - Transition: 90MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,136	4A	350V	1.5V @ 20mA, 2A	50µA	2000 @ 2A, 2V	45W	90MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3
CP396V-2N2369A-CT20	Central Semiconductor Corp	TRANS NPN 1=20PCS Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: - Frequency - Transition: 500MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고7,184	200mA	15V	500mV @ 10mA, 100mA	400nA (ICBO)	40 @ 10mA, 1V	-	500MHz	-65°C ~ 200°C (TJ)	Surface Mount	Die	Die
DXT2012P5-13	Diodes Incorporated	TRANS PNP 60V 5.5A POWERDI5 Transistor Type: PNP Current - Collector (Ic) (Max): 5.5A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Power - Max: 3.2W Frequency - Transition: 120MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5	패키지: PowerDI? 5	재고3,792	5.5A	60V	250mV @ 500mA, 5A	20nA (ICBO)	100 @ 2A, 1V	3.2W	120MHz	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI? 5	PowerDI? 5
PN2907ATAR	Fairchild/ON Semiconductor	TRANS PNP 60V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,448	800mA	60V	1.6V @ 50mA, 500mA	20nA (ICBO)	100 @ 150mA, 10V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
NSM6056MT1G	ON Semiconductor	TRANS NPN 40V 0.6A SC74 Transistor Type: NPN + Zener Diode (Isolated) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Power - Max: 380mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SC-74	패키지: SC-74, SOT-457	재고72,000	600mA	40V	750mV @ 50mA, 500mA	-	100 @ 150mA, 1V	380mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	SC-74
ABC856BW-HF	Comchip Technology	TRANS PNP 65V 0.1A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 250MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	100 mA	65 V	650mV @ 5mA, 100mA	15nA (ICBO)	220 @ 2mA, 5V	200 mW	250MHz	-65°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
JANSP2N2906AUB-TR	Microchip Technology	TRANS PNP 60V 0.6A UB Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C	Surface Mount	3-SMD, No Lead	UB
2N5680L	Microchip Technology	PNP POWER TRANSISTOR SILICON AMP Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N5050	Microchip Technology	NPN SILICON TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N5758	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 150 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	패키지: -	Request a Quote	6 A	100 V	-	-	-	150 W	-	-	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
2SB861C	Renesas Electronics Corporation	POWER BIPOLAR TRANSISTOR, PNP Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V Power - Max: 1.8 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	Request a Quote	2 A	150 V	3V @ 50mA, 500mA	1µA (ICBO)	100 @ 500mA, 10V	1.8 W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
2SC2883-Y-TP	Micro Commercial Co	TRANS NPN 30V 1.5A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Power - Max: 500 mW Frequency - Transition: 120MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	1.5 A	30 V	2V @ 30mA, 1.5A	100nA (ICBO)	160 @ 500mA, 2V	500 mW	120MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
BC54-16PAS-QX	Nexperia USA Inc.	POWER BJTS IN DFN Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 420 mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Exposed Pad Supplier Device Package: DFN2020D-3	패키지: -	재고9,000	1 A	45 V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	420 mW	180MHz	150°C (TJ)	Surface Mount	3-UDFN Exposed Pad	DFN2020D-3
2SC1008-O-AP	Micro Commercial Co	TRANS NPN 60V 0.7A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V Power - Max: 800 mW Frequency - Transition: 30MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	패키지: -	Request a Quote	700 mA	60 V	400mV @ 50mA, 500mA	100nA (ICBO)	70 @ 50mA, 2V	800 mW	30MHz	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
NSVS50031SB3T1G	onsemi	TRANS NPN 50V 3A 3CPH Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1.1 W Frequency - Transition: 380MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CPH	패키지: -	재고4,308	3 A	50 V	210mV @ 100mA, 2A	1µA (ICBO)	200 @ 100mA, 2V	1.1 W	380MHz	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CPH
JANSL2N3637UB-TR	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 175 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	1 A	175 V	600mV @ 5mA, 50mA	10µA	100 @ 50mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2SC3787S	onsemi	POWER BIPOLAR TRANSISTOR NPN Transistor Type: NPN Current - Collector (Ic) (Max): 140 mA Voltage - Collector Emitter Breakdown (Max): 160 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Power - Max: 1.3 W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126ML	패키지: -	Request a Quote	140 mA	160 V	300mV @ 5mA, 50mA	100nA (ICBO)	100 @ 10mA, 5V	1.3 W	150MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126ML
JANTX2N3251A	Microsemi Corporation	TRANS PNP 60V 0.2A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 360 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	200 mA	60 V	500mV @ 5mA, 50mA	10µA (ICBO)	100 @ 10mA, 1V	360 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)

2SA2125-S-TD-H

ON Semiconductor

TRANS PNP 50V 3A

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 3.5W
Frequency - Transition: 390MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

패키지: TO-243AA

재고5,088

3A

50V

500mV @ 100mA, 2A

1µA (ICBO)

200 @ 100mA, 2V

3.5W

390MHz

-

Surface Mount

TO-243AA

PCP

BDW24C-S

Bourns Inc.

TRANS PNP DARL 100V 6A

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 60mA, 6A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고7,728

6A

100V

3V @ 60mA, 6A

500µA

750 @ 2A, 3V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

2SC1741STPQ

Rohm Semiconductor

TRANS NPN 32V 0.5A SPT

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 300mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

패키지: SC-72 Formed Leads

재고60,000

500mA

32V

600mV @ 50mA, 500mA

1µA (ICBO)

120 @ 100mA, 3V

300mW

250MHz

150°C (TJ)

Through Hole

SC-72 Formed Leads

SPT

2SB1241TV2R

Rohm Semiconductor

TRANS PNP 80V 1A ATV

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: ATV

패키지: 3-SIP

재고30,000

1A

80V

400mV @ 50mA, 500mA

1µA (ICBO)

180 @ 100mA, 3V

1W

100MHz

150°C (TJ)

Through Hole

3-SIP

ATV

KSD882YSTSSTU

Fairchild/ON Semiconductor

TRANS NPN 30V 3A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: 90MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

패키지: TO-225AA, TO-126-3

재고6,992

3A

30V

500mV @ 200mA, 2A

1µA (ICBO)

160 @ 1A, 2V

1W

90MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

FJX1182OTF

Fairchild/ON Semiconductor

TRANS PNP 30V 0.5A SOT-323

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Power - Max: 150mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고5,232

500mA

30V

250mV @ 10mA, 100mA

100nA (ICBO)

70 @ 100mA, 1V

150mW

200MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

KST5088MTF

Fairchild/ON Semiconductor

TRANS NPN 30V 0.05A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Power - Max: 350mW
Frequency - Transition: 50MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고864,000

50mA

30V

500mV @ 1mA, 10mA

50nA (ICBO)

300 @ 100µA, 5V

350mW

50MHz

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2N1711

STMicroelectronics

TRANS NPN 50V 0.5A TO-39

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V
Power - Max: 800mW
Frequency - Transition: 100MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고7,840

500mA

50V

1.5V @ 15mA, 150mA

10nA (ICBO)

35 @ 100mA, 10V

800mW

100MHz

175°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

JAN2N3792

Microsemi Corporation

TRANS PNP 80V 10A TO-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Power - Max: 5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3
Supplier Device Package: TO-3 (TO-204AA)

패키지: TO-3

재고15,300

10A

80V

2.5V @ 2A, 10A

5mA

30 @ 3A, 2V

5W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-3

TO-3 (TO-204AA)

JAN2N6306

Microsemi Corporation

TRANS NPN 250V 8A TO3

Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 5V
Power - Max: 125W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)

패키지: TO-204AA, TO-3

재고7,296

8A

250V

5V @ 2A, 8A

50µA

15 @ 3A, 5V

125W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-204AA (TO-3)

NJVNJD35N04G

ON Semiconductor

TRANS NPN DARL 350V 4A DPAK-4

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Power - Max: 45W
Frequency - Transition: 90MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,136

4A

350V

1.5V @ 20mA, 2A

50µA

2000 @ 2A, 2V

45W

90MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

CP396V-2N2369A-CT20

Central Semiconductor Corp

TRANS NPN 1=20PCS

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: -
Frequency - Transition: 500MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고7,184

200mA

15V

500mV @ 10mA, 100mA

400nA (ICBO)

40 @ 10mA, 1V

-

500MHz

-65°C ~ 200°C (TJ)

Surface Mount

Die

DXT2012P5-13

Diodes Incorporated

TRANS PNP 60V 5.5A POWERDI5

Transistor Type: PNP
Current - Collector (Ic) (Max): 5.5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Power - Max: 3.2W
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5

패키지: PowerDI? 5

재고3,792

5.5A

60V

250mV @ 500mA, 5A

20nA (ICBO)

100 @ 2A, 1V

3.2W

120MHz

-55°C ~ 150°C (TJ)

Surface Mount

PowerDI? 5

PN2907ATAR

Fairchild/ON Semiconductor

TRANS PNP 60V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,448

800mA

60V

1.6V @ 50mA, 500mA

20nA (ICBO)

100 @ 150mA, 10V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

NSM6056MT1G

ON Semiconductor

TRANS NPN 40V 0.6A SC74

Transistor Type: NPN + Zener Diode (Isolated)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 380mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74

패키지: SC-74, SOT-457

재고72,000

600mA

40V

750mV @ 50mA, 500mA

-

100 @ 150mA, 1V

380mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

SC-74

ABC856BW-HF

Comchip Technology

TRANS PNP 65V 0.1A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 200 mW
Frequency - Transition: 250MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

Request a Quote

100 mA

65 V

650mV @ 5mA, 100mA

15nA (ICBO)

220 @ 2mA, 5V

200 mW

250MHz

-65°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

JANSP2N2906AUB-TR

Microchip Technology

TRANS PNP 60V 0.6A UB

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C

Surface Mount

3-SMD, No Lead

UB

2N5680L

Microchip Technology

PNP POWER TRANSISTOR SILICON AMP

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N5050

Microchip Technology

NPN SILICON TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N5758

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 150 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

패키지: -

Request a Quote

6 A

100 V

-

150 W

-

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

2SB861C

Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR, PNP

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Power - Max: 1.8 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: -

Request a Quote

2 A

150 V

3V @ 50mA, 500mA

1µA (ICBO)

100 @ 500mA, 10V

1.8 W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

2SC2883-Y-TP

Micro Commercial Co

TRANS NPN 30V 1.5A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Power - Max: 500 mW
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

Request a Quote

1.5 A

30 V

2V @ 30mA, 1.5A

100nA (ICBO)

160 @ 500mA, 2V

500 mW

120MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

BC54-16PAS-QX

Nexperia USA Inc.

POWER BJTS IN DFN

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 420 mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Supplier Device Package: DFN2020D-3

패키지: -

재고9,000

1 A

45 V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

420 mW

180MHz

150°C (TJ)

Surface Mount

3-UDFN Exposed Pad

DFN2020D-3

2SC1008-O-AP

Micro Commercial Co

TRANS NPN 60V 0.7A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Power - Max: 800 mW
Frequency - Transition: 30MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

패키지: -

Request a Quote

700 mA

60 V

400mV @ 50mA, 500mA

100nA (ICBO)

70 @ 50mA, 2V

800 mW

30MHz

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

NSVS50031SB3T1G

onsemi

TRANS NPN 50V 3A 3CPH

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 1.1 W
Frequency - Transition: 380MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CPH

패키지: -

재고4,308

3 A

50 V

210mV @ 100mA, 2A

1µA (ICBO)

200 @ 100mA, 2V

1.1 W

380MHz

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CPH

JANSL2N3637UB-TR

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

1 A

175 V

600mV @ 5mA, 50mA

10µA

100 @ 50mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2SC3787S

onsemi

POWER BIPOLAR TRANSISTOR NPN

Transistor Type: NPN
Current - Collector (Ic) (Max): 140 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Power - Max: 1.3 W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126ML

패키지: -

Request a Quote

140 mA

160 V

300mV @ 5mA, 50mA

100nA (ICBO)

100 @ 10mA, 5V

1.3 W

150MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126ML

JANTX2N3251A

Microsemi Corporation

TRANS PNP 60V 0.2A TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 360 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

Request a Quote

200 mA

60 V

500mV @ 5mA, 50mA

10µA (ICBO)

100 @ 10mA, 1V

360 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)