페이지 633 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC 807-16W H6327	Infineon Technologies	TRANS PNP 45V 0.5A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 250mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고5,296	500mA	45V	700mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 1V	250mW	200MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
MMBT2907A-13	Diodes Incorporated	TRANS PNP 60V 600MA SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 310mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,384	600mA	60V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	310mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BC516_J35Z	Fairchild/ON Semiconductor	TRANS PNP DARL 30V 1A TO-92 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,536	1A	30V	1V @ 100µA, 100mA	100nA (ICBO)	30000 @ 20mA, 2V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC237C	ON Semiconductor	TRANS NPN 45V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Power - Max: 350mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,784	100mA	45V	600mV @ 5mA, 100mA	15nA	380 @ 2mA, 5V	350mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC212BRL1	ON Semiconductor	TRANS PNP 50V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V Power - Max: 350mW Frequency - Transition: 280MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,336	100mA	50V	600mV @ 5mA, 100mA	15nA (ICBO)	60 @ 2mA, 5V	350mW	280MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5551ZL1G	ON Semiconductor	TRANS NPN 160V 0.6A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,048	600mA	160V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	625mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N6076_D27Z	Fairchild/ON Semiconductor	TRANS PNP 25V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 625mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,440	500mA	25V	250mV @ 1mA, 10mA	100nA	100 @ 10mA, 1V	625mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
TIP41CN	STMicroelectronics	TRANS NPN 100V 6A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Power - Max: 65W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고2,688	6A	100V	1.5V @ 600mA, 6A	700µA	15 @ 3A, 4V	65W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
SMMBT6521LT1G	ON Semiconductor	TRANS NPN 25V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V Power - Max: 225mW Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고7,216	100mA	25V	500mV @ 5mA, 50mA	500nA (ICBO)	300 @ 2mA, 10V	225mW	-	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
MMBT3906VL	Nexperia USA Inc.	MMBT3906/SOT23/TO-236AB Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,624	-	-	-	-	-	-	-	-	-	-	-
PHPT61002NYCX	Nexperia USA Inc.	TRANS NPN 100V 2A LFPAK Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 75mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1.5V Power - Max: 1.25W Frequency - Transition: 140MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8	패키지: SC-100, SOT-669	재고5,296	2A	100V	75mV @ 50mA, 500mA	100nA (ICBO)	100 @ 500mA, 1.5V	1.25W	140MHz	175°C (TJ)	Surface Mount	SC-100, SOT-669	LFPAK56, Power-SO8
KSC2690AYSTU	Fairchild/ON Semiconductor	TRANS NPN 160V 1.2A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V Power - Max: 1.2W Frequency - Transition: 155MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	패키지: TO-225AA, TO-126-3	재고21,540	1.2A	160V	700mV @ 200mA, 1A	1µA (ICBO)	160 @ 300mA, 5V	1.2W	155MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
PBSS303NX,115	Nexperia USA Inc.	TRANS NPN 30V 5.1A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 5.1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 220mV @ 255mA, 5.1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V Power - Max: 2.1W Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고19,608	5.1A	30V	220mV @ 255mA, 5.1A	100nA (ICBO)	250 @ 2A, 2V	2.1W	130MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
KSH2955TF	Fairchild/ON Semiconductor	TRANS PNP 60V 10A DPAK Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Power - Max: 1.75W Frequency - Transition: 2MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고26,508	10A	60V	8V @ 3.3A, 10A	50µA	20 @ 4A, 4V	1.75W	2MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
DSC2A01S0L	Panasonic Electronic Components	TRANS NPN 40V 0.05A MINI3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2mA, 10V Power - Max: 200mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G3-B	패키지: TO-236-3, SC-59, SOT-23-3	재고2,032	50mA	40V	200mV @ 1mA, 10mA	1µA	600 @ 2mA, 10V	200mW	150MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G3-B
BC807-25WT1G	ON Semiconductor	TRANS PNP 45V 0.5A SC-70 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 460mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	패키지: SC-70, SOT-323	재고218,154	500mA	45V	700mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	460mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
2SC5824T100Q	Rohm Semiconductor	TRANS NPN 60V 3A SOT-89 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	패키지: TO-243AA	재고16,416	3A	60V	500mV @ 200mA, 2A	1µA (ICBO)	120 @ 100mA, 2V	2W	200MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
2SC3837KT146P	Rohm Semiconductor	TRANS NPN 20V 0.05A SOT-346 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V Power - Max: 200mW Frequency - Transition: 1.5GHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: TO-236-3, SC-59, SOT-23-3	재고938,064	50mA	20V	500mV @ 4mA, 20mA	500nA (ICBO)	82 @ 10mA, 10V	200mW	1.5GHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
JANSG2N2221AUA	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 650 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	패키지: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	650 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
CJD47-TR13-PBFREE	Central Semiconductor Corp	TRANS NPN 250V 1A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Power - Max: 1.56 W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	패키지: -	Request a Quote	1 A	250 V	1V @ 200mA, 1A	200µA	30 @ 300mA, 10V	1.56 W	10MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
JANSF2N5154U3	Microchip Technology	TRANS NPN 80V 2A U3 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3 (SMD-0.5)	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U3 (SMD-0.5)
2SC1923-Y-AP	Micro Commercial Co	TRANS NPN 30V 0.02A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 20 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Power - Max: 100 mW Frequency - Transition: 500MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	패키지: -	Request a Quote	20 mA	30 V	-	500nA (ICBO)	100 @ 1mA, 6V	100 mW	500MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
2N5410	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 52 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Supplier Device Package: TO-111	패키지: -	Request a Quote	5 A	80 V	600mV @ 200µA, 2mA	-	-	52 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-111-4, Stud	TO-111
2N5099	Microsemi Corporation	TRANS NPN 800V 1A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 800 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 4 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	1 A	800 V	-	-	-	4 W	-	-	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2SB562CTZ-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANS PNP Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 900 mW Frequency - Transition: 350MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	패키지: -	Request a Quote	1 A	20 V	500mV @ 80mA, 800mA	1µA (ICBO)	120 @ 500mA, 2V	900 mW	350MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
ZXTP19100CZQTA	Diodes Incorporated	PWR LOW SAT TRANSISTOR SOT89 T&R Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1.1 W Frequency - Transition: 142MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: -	재고3,000	2 A	100 V	295mV @ 200mA, 2A	50nA (ICBO)	200 @ 100mA, 2V	1.1 W	142MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
TPC6503-TE85L-F-M	Toshiba Semiconductor and Storage	TRANS NPN 30V 1.5A VS-6 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 150mA, 2V Power - Max: 1.6 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: VS-6 (2.9x2.8)	패키지: -	Request a Quote	1.5 A	30 V	120mV @ 10mA, 500mA	100nA (ICBO)	400 @ 150mA, 2V	1.6 W	-	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	VS-6 (2.9x2.8)
PBHV9560Z-QX	Nexperia USA Inc.	PBHV9560Z-Q/SOT223/SC-73 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 600 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 10V Power - Max: 650 mW Frequency - Transition: 38MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	재고3,000	500 mA	600 V	250mV @ 5mA, 50mA	100nA	70 @ 50mA, 10V	650 mW	38MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223

BC 807-16W H6327

Infineon Technologies

TRANS PNP 45V 0.5A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 250mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고5,296

500mA

45V

700mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 1V

250mW

200MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

MMBT2907A-13

Diodes Incorporated

TRANS PNP 60V 600MA SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 310mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,384

600mA

60V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

310mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BC516_J35Z

Fairchild/ON Semiconductor

TRANS PNP DARL 30V 1A TO-92

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,536

1A

30V

1V @ 100µA, 100mA

100nA (ICBO)

30000 @ 20mA, 2V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC237C

ON Semiconductor

TRANS NPN 45V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,784

100mA

45V

600mV @ 5mA, 100mA

15nA

380 @ 2mA, 5V

350mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BC212BRL1

ON Semiconductor

TRANS PNP 50V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 280MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,336

100mA

50V

600mV @ 5mA, 100mA

15nA (ICBO)

60 @ 2mA, 5V

350mW

280MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N5551ZL1G

ON Semiconductor

TRANS NPN 160V 0.6A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,048

600mA

160V

200mV @ 5mA, 50mA

50nA (ICBO)

80 @ 10mA, 5V

625mW

300MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N6076_D27Z

Fairchild/ON Semiconductor

TRANS PNP 25V 0.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,440

500mA

25V

250mV @ 1mA, 10mA

100nA

100 @ 10mA, 1V

625mW

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

TIP41CN

STMicroelectronics

TRANS NPN 100V 6A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Power - Max: 65W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고2,688

6A

100V

1.5V @ 600mA, 6A

700µA

15 @ 3A, 4V

65W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

SMMBT6521LT1G

ON Semiconductor

TRANS NPN 25V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Power - Max: 225mW
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고7,216

100mA

25V

500mV @ 5mA, 50mA

500nA (ICBO)

300 @ 2mA, 10V

225mW

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

MMBT3906VL

Nexperia USA Inc.

MMBT3906/SOT23/TO-236AB

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,624

-

PHPT61002NYCX

Nexperia USA Inc.

TRANS NPN 100V 2A LFPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 75mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1.5V
Power - Max: 1.25W
Frequency - Transition: 140MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8

패키지: SC-100, SOT-669

재고5,296

2A

100V

75mV @ 50mA, 500mA

100nA (ICBO)

100 @ 500mA, 1.5V

1.25W

140MHz

175°C (TJ)

Surface Mount

SC-100, SOT-669

LFPAK56, Power-SO8

KSC2690AYSTU

Fairchild/ON Semiconductor

TRANS NPN 160V 1.2A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
Power - Max: 1.2W
Frequency - Transition: 155MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

패키지: TO-225AA, TO-126-3

재고21,540

1.2A

160V

700mV @ 200mA, 1A

1µA (ICBO)

160 @ 300mA, 5V

1.2W

155MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

PBSS303NX,115

Nexperia USA Inc.

TRANS NPN 30V 5.1A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 5.1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 255mA, 5.1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Power - Max: 2.1W
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고19,608

5.1A

30V

220mV @ 255mA, 5.1A

100nA (ICBO)

250 @ 2A, 2V

2.1W

130MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

KSH2955TF

Fairchild/ON Semiconductor

TRANS PNP 60V 10A DPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 1.75W
Frequency - Transition: 2MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고26,508

10A

60V

8V @ 3.3A, 10A

50µA

20 @ 4A, 4V

1.75W

2MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

DSC2A01S0L

Panasonic Electronic Components

TRANS NPN 40V 0.05A MINI3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2mA, 10V
Power - Max: 200mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B

패키지: TO-236-3, SC-59, SOT-23-3

재고2,032

50mA

40V

200mV @ 1mA, 10mA

1µA

600 @ 2mA, 10V

200mW

150MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G3-B

BC807-25WT1G

ON Semiconductor

TRANS PNP 45V 0.5A SC-70

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 460mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

패키지: SC-70, SOT-323

재고218,154

500mA

45V

700mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

460mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

2SC5824T100Q

Rohm Semiconductor

TRANS NPN 60V 3A SOT-89

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 2W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

패키지: TO-243AA

재고16,416

3A

60V

500mV @ 200mA, 2A

1µA (ICBO)

120 @ 100mA, 2V

2W

200MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

2SC3837KT146P

Rohm Semiconductor

TRANS NPN 20V 0.05A SOT-346

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
Power - Max: 200mW
Frequency - Transition: 1.5GHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

재고938,064

50mA

20V

500mV @ 4mA, 20mA

500nA (ICBO)

82 @ 10mA, 10V

200mW

1.5GHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

JANSG2N2221AUA

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 650 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

패키지: -

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800 mA

50 V

1V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

650 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

CJD47-TR13-PBFREE

Central Semiconductor Corp

TRANS NPN 250V 1A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Power - Max: 1.56 W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

패키지: -

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1 A

250 V

1V @ 200mA, 1A

200µA

30 @ 300mA, 10V

1.56 W

10MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

JANSF2N5154U3

Microchip Technology

TRANS NPN 80V 2A U3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3 (SMD-0.5)

패키지: -

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2 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U3 (SMD-0.5)

2SC1923-Y-AP

Micro Commercial Co

TRANS NPN 30V 0.02A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Power - Max: 100 mW
Frequency - Transition: 500MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

패키지: -

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20 mA

30 V

-

500nA (ICBO)

100 @ 1mA, 6V

100 mW

500MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

2N5410

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 52 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Supplier Device Package: TO-111

패키지: -

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5 A

80 V

600mV @ 200µA, 2mA

-

52 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-111-4, Stud

TO-111

2N5099

Microsemi Corporation

TRANS NPN 800V 1A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 4 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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1 A

800 V

-

4 W

-

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2SB562CTZ-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANS PNP

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 900 mW
Frequency - Transition: 350MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

패키지: -

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1 A

20 V

500mV @ 80mA, 800mA

1µA (ICBO)

120 @ 500mA, 2V

900 mW

350MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

ZXTP19100CZQTA

Diodes Incorporated

PWR LOW SAT TRANSISTOR SOT89 T&R

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 1.1 W
Frequency - Transition: 142MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: -

재고3,000

2 A

100 V

295mV @ 200mA, 2A

50nA (ICBO)

200 @ 100mA, 2V

1.1 W

142MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

TPC6503-TE85L-F-M

Toshiba Semiconductor and Storage

TRANS NPN 30V 1.5A VS-6

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 150mA, 2V
Power - Max: 1.6 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: VS-6 (2.9x2.8)

패키지: -

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1.5 A

30 V

120mV @ 10mA, 500mA

100nA (ICBO)

400 @ 150mA, 2V

1.6 W

-

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

VS-6 (2.9x2.8)

PBHV9560Z-QX

Nexperia USA Inc.

PBHV9560Z-Q/SOT223/SC-73

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 10V
Power - Max: 650 mW
Frequency - Transition: 38MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

재고3,000

500 mA

600 V

250mV @ 5mA, 50mA

100nA

70 @ 50mA, 10V

650 mW

38MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223