페이지 100 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI1557DH-T1-E3	Vishay Siliconix	MOSFET N/P-CH 12V 1.2A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.2A, 770mA Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 470mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	패키지: 6-TSSOP, SC-88, SOT-363	재고72,000	Logic Level Gate	12V	1.2A, 770mA	235 mOhm @ 1.2A, 4.5V	1V @ 100µA	1.2nC @ 4.5V	-	470mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
NTLJD2104PTAG	ON Semiconductor	MOSFET 2P-CH 12V 2.4A 6WDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고5,248	Logic Level Gate	12V	2.4A	90 mOhm @ 3A, 4.5V	800mV @ 250µA	8nC @ 4.5V	467pF @ 6V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
SI4330DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 6.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고666,552	Logic Level Gate	30V	6.6A	16.5 mOhm @ 8.7A, 10V	3V @ 250µA	20nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM10DUM02G	Microsemi Corporation	MOSFET 2N-CH 100V 495A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 495A Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고3,472	Standard	100V	495A	2.5 mOhm @ 200A, 10V	4V @ 10mA	1360nC @ 10V	40000pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTC90AM60T1G	Microsemi Corporation	MOSFET 2N-CH 900V 59A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고3,488	Super Junction	900V	59A	60 mOhm @ 52A, 10V	3.5V @ 6mA	540nC @ 10V	13600pF @ 100V	462W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
ALD210804PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: 16-DIP (0.300", 7.62mm)	재고3,808	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SIZ700DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 16A PPAK 1212-8 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Power - Max: 2.36W, 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	패키지: 6-PowerPair?	재고2,414,892	Standard	20V	16A	8.6 mOhm @ 15A, 10V	2.2V @ 250µA	35nC @ 10V	1300pF @ 10V	2.36W, 2.8W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
SI1033X-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 0.145A SC89 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 145mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고36,600	Logic Level Gate	20V	145mA	8 Ohm @ 150mA, 4.5V	1.2V @ 250µA	1.5nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
AO6804A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 5A 6TSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 10V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: SC-74, SOT-457	재고629,016	Logic Level Gate	20V	5A	28 mOhm @ 5A, 4.5V	1V @ 250µA	7.5nC @ 4.5V	225pF @ 10V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
EFC4627R-TR	ON Semiconductor	MOSFET 2N-CH 12V 6A CSP4 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: 150°C (TJ) Mounting Type: - Package / Case: 4-XFBGA, FCBGA Supplier Device Package: 4-EFCP (1.01x1.01)	패키지: 4-XFBGA, FCBGA	재고3,184	Logic Level Gate, 2.5V Drive	-	-	-	-	13.4nC @ 4.5V	-	1.4W	150°C (TJ)	-	4-XFBGA, FCBGA	4-EFCP (1.01x1.01)
NX3020NAKV,115	Nexperia USA Inc.	MOSFET 2N-CH 30V 0.2A SOT666 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Power - Max: 375mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고3,488	Logic Level Gate	30V	200mA	4.5 Ohm @ 100mA, 10V	1.5V @ 250µA	0.44nC @ 4.5V	13pF @ 10V	375mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
ZXMN2AMCTA	Diodes Incorporated	MOSFET 2N-CH 20V 2.9A DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (3x2)	패키지: 8-WDFN Exposed Pad	재고36,000	Logic Level Gate	20V	2.9A	120 mOhm @ 4A, 4.5V	3V @ 250µA	3.1nC @ 4.5V	299pF @ 15V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN (3x2)
DMN63D8LV-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.26A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 260mA Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고48,624	Logic Level Gate	30V	260mA	2.8 Ohm @ 250mA, 10V	1.5V @ 250µA	0.87nC @ 10V	22pF @ 25V	450mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
CSD87381PT	Texas Instruments	MOSFET 2N-CH 30V 15A 5PTAB FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 16.3 mOhm @ 8A, 8V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 15V Power - Max: 4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-LGA Supplier Device Package: 5-PTAB (3x2.5)	패키지: 5-LGA	재고25,554	Logic Level Gate	30V	15A	16.3 mOhm @ 8A, 8V	1.9V @ 250µA	5nC @ 4.5V	564pF @ 15V	4W	-55°C ~ 150°C (TJ)	Surface Mount	5-LGA	5-PTAB (3x2.5)
AO4614B	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 40V 6A/5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고372,840	Logic Level Gate	40V	6A, 5A	30 mOhm @ 6A, 10V	3V @ 250µA	10.8nC @ 10V	650pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN601DWK-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.305A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고1,392,264	Logic Level Gate	60V	305mA	2 Ohm @ 500mA, 10V	2.5V @ 1mA	-	50pF @ 25V	200mW	-65°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MSCSM170AM11CT3AG	Microchip Technology	SIC 2N-CH 1700V 240A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V Power - Max: 1.14kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	재고12	-	1700V (1.7kV)	240A (Tc)	11.3mOhm @ 120A, 20V	3.2V @ 10mA	712nC @ 20V	13200pF @ 1000V	1.14kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM170HRM451AG	Microchip Technology	SIC 4N-CH 1700V/1200V 64A/89A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc), 89A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA, 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V, 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V, 3020pF @ 1000V Power - Max: 319W (Tc), 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1700V (1.7kV), 1200V (1.2kV)	64A (Tc), 89A (Tc)	45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V	3.2V @ 2.5mA, 2.8V @ 3mA	178nC @ 20V, 232nC @ 20V	3300pF @ 1000V, 3020pF @ 1000V	319W (Tc), 395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
GSFN0232	Good-Ark Semiconductor	MOSFET 20V 32A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 15V Power - Max: 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-DFN (2x3)	패키지: -	재고17,910	-	20V	32A (Ta)	6.7mOhm @ 5.5A, 4.5V	1.5V @ 250µA	30nC @ 4.5V	1180pF @ 15V	20W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-DFN (2x3)
NDH8502P	Fairchild Semiconductor	MOSFET 2P-CH 30V 2.2A SUPERSOT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSOP (0.130", 3.30mm Width) Supplier Device Package: SuperSOT™-8	패키지: -	Request a Quote	-	30V	2.2A (Ta)	110mOhm @ 2.2A, 10V	3V @ 250µA	14.5nC @ 10V	340pF @ 15V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSOP (0.130", 3.30mm Width)	SuperSOT™-8
SI4946CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 5.2A/6.1A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Power - Max: 2W (Ta), 2.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	-	60V	5.2A (Ta), 6.1A (Tc)	40.9mOhm @ 5.2A, 10V	3V @ 250µA	10nC @ 10V	350pF @ 30V	2W (Ta), 2.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQ1902AEL-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.78A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 780mA (Tc) Rds On (Max) @ Id, Vgs: 415mOhm @ 660mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Power - Max: 430mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	패키지: -	Request a Quote	-	20V	780mA (Tc)	415mOhm @ 660mA, 4.5V	1.5V @ 250µA	1.2nC @ 4.5V	75pF @ 10V	430mW	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
MSCSM120AM042D3AG	Microchip Technology	SIC 2N-CH 1200V 495A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Power - Max: 2.031kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 18mA	1392nC @ 20V	18100pF @ 1000V	2.031kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SP8M51FRATB	Rohm Semiconductor	MOSFET N/P-CH 100V 3A/2.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	-	100V	3A (Ta), 2.5A (Ta)	170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V	2.5V @ 1mA	8.5nC @ 5V, 12.5nC @ 5V	610pF @ 10V, 1550pF @ 25V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PSMN4R2-40VSHX	Nexperia USA Inc.	MOSFET 2N-CH 40V 98A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 98A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V Power - Max: 85W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: -	재고5,436	-	40V	98A (Ta)	4.2mOhm @ 20A, 10V	3.6V @ 1mA	37nC @ 10V	2590pF @ 25V	85W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
FW216A-TL-2WX	onsemi	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PJX8807_R1_00001	Panjit International Inc.	MOSFET 2P-CH 20V 0.5A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고24,000	-	20V	500mA (Ta)	1.2Ohm @ 500mA, 4.5V	1V @ 250µA	1.4nC @ 4.5V	38pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN3060LVT-13	Diodes Incorporated	MOSFET 2N-CH 30V 3.6A TSOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6	패키지: -	Request a Quote	-	30V	3.6A (Ta)	60mOhm @ 3.1A, 10V	1.8V @ 250µA	11.3nC @ 10V	395pF @ 15V	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-23-6

SI1557DH-T1-E3

Vishay Siliconix

MOSFET N/P-CH 12V 1.2A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.2A, 770mA
Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 470mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

패키지: 6-TSSOP, SC-88, SOT-363

재고72,000

Logic Level Gate

12V

1.2A, 770mA

235 mOhm @ 1.2A, 4.5V

1V @ 100µA

1.2nC @ 4.5V

-

470mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

NTLJD2104PTAG

ON Semiconductor

MOSFET 2P-CH 12V 2.4A 6WDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고5,248

Logic Level Gate

12V

2.4A

90 mOhm @ 3A, 4.5V

800mV @ 250µA

8nC @ 4.5V

467pF @ 6V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

SI4330DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 6.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고666,552

Logic Level Gate

30V

6.6A

16.5 mOhm @ 8.7A, 10V

3V @ 250µA

20nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM10DUM02G

Microsemi Corporation

MOSFET 2N-CH 100V 495A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고3,472

Standard

100V

495A

2.5 mOhm @ 200A, 10V

4V @ 10mA

1360nC @ 10V

40000pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTC90AM60T1G

Microsemi Corporation

MOSFET 2N-CH 900V 59A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고3,488

Super Junction

900V

59A

60 mOhm @ 52A, 10V

3.5V @ 6mA

540nC @ 10V

13600pF @ 100V

462W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

ALD210804PCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: 16-DIP (0.300", 7.62mm)

재고3,808

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

SIZ700DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 16A PPAK 1212-8

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Power - Max: 2.36W, 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

패키지: 6-PowerPair?

재고2,414,892

Standard

20V

16A

8.6 mOhm @ 15A, 10V

2.2V @ 250µA

35nC @ 10V

1300pF @ 10V

2.36W, 2.8W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

SI1033X-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 0.145A SC89

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 145mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고36,600

Logic Level Gate

20V

145mA

8 Ohm @ 150mA, 4.5V

1.2V @ 250µA

1.5nC @ 4.5V

-

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

AO6804A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 5A 6TSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 10V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: SC-74, SOT-457

재고629,016

Logic Level Gate

20V

5A

28 mOhm @ 5A, 4.5V

1V @ 250µA

7.5nC @ 4.5V

225pF @ 10V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

EFC4627R-TR

ON Semiconductor

MOSFET 2N-CH 12V 6A CSP4

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: 150°C (TJ)
Mounting Type: -
Package / Case: 4-XFBGA, FCBGA
Supplier Device Package: 4-EFCP (1.01x1.01)

패키지: 4-XFBGA, FCBGA

재고3,184

Logic Level Gate, 2.5V Drive

-

13.4nC @ 4.5V

-

1.4W

150°C (TJ)

-

4-XFBGA, FCBGA

4-EFCP (1.01x1.01)

NX3020NAKV,115

Nexperia USA Inc.

MOSFET 2N-CH 30V 0.2A SOT666

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Power - Max: 375mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

패키지: SOT-563, SOT-666

재고3,488

Logic Level Gate

30V

200mA

4.5 Ohm @ 100mA, 10V

1.5V @ 250µA

0.44nC @ 4.5V

13pF @ 10V

375mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

ZXMN2AMCTA

Diodes Incorporated

MOSFET 2N-CH 20V 2.9A DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN (3x2)

패키지: 8-WDFN Exposed Pad

재고36,000

Logic Level Gate

20V

2.9A

120 mOhm @ 4A, 4.5V

3V @ 250µA

3.1nC @ 4.5V

299pF @ 15V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN (3x2)

DMN63D8LV-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.26A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 260mA
Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Power - Max: 450mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고48,624

Logic Level Gate

30V

260mA

2.8 Ohm @ 250mA, 10V

1.5V @ 250µA

0.87nC @ 10V

22pF @ 25V

450mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

CSD87381PT

Texas Instruments

MOSFET 2N-CH 30V 15A 5PTAB

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 16.3 mOhm @ 8A, 8V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 15V
Power - Max: 4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-LGA
Supplier Device Package: 5-PTAB (3x2.5)

패키지: 5-LGA

재고25,554

Logic Level Gate

30V

15A

16.3 mOhm @ 8A, 8V

1.9V @ 250µA

5nC @ 4.5V

564pF @ 15V

4W

-55°C ~ 150°C (TJ)

Surface Mount

5-LGA

5-PTAB (3x2.5)

AO4614B

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 6A/5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고372,840

Logic Level Gate

40V

6A, 5A

30 mOhm @ 6A, 10V

3V @ 250µA

10.8nC @ 10V

650pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN601DWK-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.305A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 200mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고1,392,264

Logic Level Gate

60V

305mA

2 Ohm @ 500mA, 10V

2.5V @ 1mA

-

50pF @ 25V

200mW

-65°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

MSCSM170AM11CT3AG

Microchip Technology

SIC 2N-CH 1700V 240A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Power - Max: 1.14kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

재고12

-

1700V (1.7kV)

240A (Tc)

11.3mOhm @ 120A, 20V

3.2V @ 10mA

712nC @ 20V

13200pF @ 1000V

1.14kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM170HRM451AG

Microchip Technology

SIC 4N-CH 1700V/1200V 64A/89A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc), 89A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 2.5mA, 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V, 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V, 3020pF @ 1000V
Power - Max: 319W (Tc), 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

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1700V (1.7kV), 1200V (1.2kV)

64A (Tc), 89A (Tc)

45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V

3.2V @ 2.5mA, 2.8V @ 3mA

178nC @ 20V, 232nC @ 20V

3300pF @ 1000V, 3020pF @ 1000V

319W (Tc), 395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

GSFN0232

Good-Ark Semiconductor

MOSFET 20V 32A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 15V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Supplier Device Package: 6-DFN (2x3)

패키지: -

재고17,910

-

20V

32A (Ta)

6.7mOhm @ 5.5A, 4.5V

1.5V @ 250µA

30nC @ 4.5V

1180pF @ 15V

20W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-WFDFN Exposed Pad

6-DFN (2x3)

NDH8502P

Fairchild Semiconductor

MOSFET 2P-CH 30V 2.2A SUPERSOT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
Power - Max: 800mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSOP (0.130", 3.30mm Width)
Supplier Device Package: SuperSOT™-8

패키지: -

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30V

2.2A (Ta)

110mOhm @ 2.2A, 10V

3V @ 250µA

14.5nC @ 10V

340pF @ 15V

800mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSOP (0.130", 3.30mm Width)

SuperSOT™-8

SI4946CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 5.2A/6.1A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power - Max: 2W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

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60V

5.2A (Ta), 6.1A (Tc)

40.9mOhm @ 5.2A, 10V

3V @ 250µA

10nC @ 10V

350pF @ 30V

2W (Ta), 2.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQ1902AEL-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 20V 0.78A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 780mA (Tc)
Rds On (Max) @ Id, Vgs: 415mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Power - Max: 430mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

패키지: -

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20V

780mA (Tc)

415mOhm @ 660mA, 4.5V

1.5V @ 250µA

1.2nC @ 4.5V

75pF @ 10V

430mW

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

MSCSM120AM042D3AG

Microchip Technology

SIC 2N-CH 1200V 495A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Power - Max: 2.031kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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1200V (1.2kV)

495A (Tc)

5.2mOhm @ 240A, 20V

2.8V @ 18mA

1392nC @ 20V

18100pF @ 1000V

2.031kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

SP8M51FRATB

Rohm Semiconductor

MOSFET N/P-CH 100V 3A/2.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

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100V

3A (Ta), 2.5A (Ta)

170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V

2.5V @ 1mA

8.5nC @ 5V, 12.5nC @ 5V

610pF @ 10V, 1550pF @ 25V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PSMN4R2-40VSHX

Nexperia USA Inc.

MOSFET 2N-CH 40V 98A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 98A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V
Power - Max: 85W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: -

재고5,436

-

40V

98A (Ta)

4.2mOhm @ 20A, 10V

3.6V @ 1mA

37nC @ 10V

2590pF @ 25V

85W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

FW216A-TL-2WX

onsemi

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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PJX8807_R1_00001

Panjit International Inc.

MOSFET 2P-CH 20V 0.5A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고24,000

-

20V

500mA (Ta)

1.2Ohm @ 500mA, 4.5V

1V @ 250µA

1.4nC @ 4.5V

38pF @ 10V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN3060LVT-13

Diodes Incorporated

MOSFET 2N-CH 30V 3.6A TSOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6

패키지: -

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30V

3.6A (Ta)

60mOhm @ 3.1A, 10V

1.8V @ 250µA

11.3nC @ 10V

395pF @ 15V

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-23-6