페이지 97 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 어레이

기록 5,684
페이지  97/203
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설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF6702M2DTR1PBF
Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
  • Power - Max: 2.7W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DirectFET? Isometric MA
  • Supplier Device Package: DIRECTFET? MA
패키지: DirectFET? Isometric MA
재고2,160
Logic Level Gate
30V
15A
6.6 mOhm @ 15A, 10V
2.35V @ 25µA
14nC @ 4.5V
1380pF @ 15V
2.7W
-55°C ~ 175°C (TJ)
Surface Mount
DirectFET? Isometric MA
DIRECTFET? MA
hot IRF9952
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고557,988
Logic Level Gate
30V
3.5A, 2.3A
100 mOhm @ 2.2A, 10V
1V @ 250µA
14nC @ 10V
190pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AO4822AL_102
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,928
Logic Level Gate
30V
8A
19 mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
888pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI5975DC-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 3.1A CHIPFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 86 mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
패키지: 8-SMD, Flat Lead
재고6,384
Logic Level Gate
12V
3.1A
86 mOhm @ 3.1A, 4.5V
450mV @ 1mA (Min)
9nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
TPCP8401(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V/12V PS-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V, 12V
  • Current - Continuous Drain (Id) @ 25°C: 100mA, 5.5A
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8 (2.9x2.4)
패키지: 8-SMD, Flat Lead
재고7,472
Logic Level Gate
20V, 12V
100mA, 5.5A
3 Ohm @ 10mA, 4V
1.1V @ 100µA
-
9.3pF @ 3V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
PS-8 (2.9x2.4)
BSD235NH6327XTSA1
Infineon Technologies

MOSFET 2N-CH 20V 0.95A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 950mA
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고3,248
Logic Level Gate
20V
950mA
350 mOhm @ 950mA, 4.5V
1.2V @ 1.6µA
0.32nC @ 4.5V
63pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
GMM3X160-0055X2-SMDSAM
IXYS

MOSFET 6N-CH 55V 150A 24-SMD

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SMD, Gull Wing
  • Supplier Device Package: 24-SMD
패키지: 24-SMD, Gull Wing
재고3,424
Standard
55V
150A
-
4V @ 1mA
110nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
24-SMD, Gull Wing
24-SMD
hot FDMS3660S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/30A 8-PQFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A, 30A
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: Power56
패키지: 8-PowerTDFN
재고45,096
Logic Level Gate
30V
13A, 30A
8 mOhm @ 13A, 10V
2.7V @ 250µA
29nC @ 10V
1765pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
Power56
NX138BKSF
Nexperia USA Inc.

NX138BKS/SOT363/SC-88

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,576
-
-
-
-
-
-
-
-
-
-
-
-
CMLDM7002AG TR
Central Semiconductor Corp

MOSFET 2N-CH 60V 0.28A SOT563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고3,376
Standard
60V
280mA
2 Ohm @ 500mA, 10V
2.5V @ 250µA
0.59nC @ 4.5V
50pF @ 25V
350mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
SIB912DK-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 1.5A SC-75-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-75-6L Dual
  • Supplier Device Package: PowerPAK? SC-75-6L Dual
패키지: PowerPAK? SC-75-6L Dual
재고7,440
Logic Level Gate
20V
1.5A
216 mOhm @ 1.8A, 4.5V
1V @ 250µA
3nC @ 8V
95pF @ 10V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Dual
PowerPAK? SC-75-6L Dual
hot SMA5133
Sanken

MOSFET 3N/3P-CH 500V 2.5A 12-SIP

  • FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
패키지: 12-SIP, Exposed Tab
재고41,772
Standard
500V
2.5A
-
-
-
-
-
-
Through Hole
12-SIP, Exposed Tab
12-SIP
IPG20N04S4L07ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
  • Power - Max: 65W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
패키지: 8-PowerVDFN
재고5,568
Logic Level Gate
40V
20A
7.2 mOhm @ 17A, 10V
2.2V @ 30µA
50nC @ 10V
3980pF @ 25V
65W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
hot IRF7904TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 7.6A/11A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
  • Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
  • Power - Max: 1.4W, 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고26,796
Logic Level Gate
30V
7.6A, 11A
16.2 mOhm @ 7.6A, 10V
2.25V @ 25µA
11nC @ 4.5V
910pF @ 15V
1.4W, 2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXMD63N03XTA
Diodes Incorporated

MOSFET 2N-CH 30V 2.3A 8-MSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고101,136
Logic Level Gate
30V
2.3A
135 mOhm @ 1.7A, 10V
1V @ 250µA (Min)
8nC @ 10V
290pF @ 25V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hot DMN3135LVT-7
Diodes Incorporated

MOSFET 2N-CH 30V 3.5A TSOT26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
  • Power - Max: 840mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
패키지: SOT-23-6 Thin, TSOT-23-6
재고288,000
Logic Level Gate
30V
3.5A
60 mOhm @ 3.1A, 10V
2.2V @ 250µA
4.1nC @ 4.5V
305pF @ 15V
840mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
hot SI1024X-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 0.485A SC89-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 485mA
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
패키지: SOT-563, SOT-666
재고943,308
Logic Level Gate
20V
485mA
700 mOhm @ 600mA, 4.5V
900mV @ 250µA
0.75nC @ 4.5V
-
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
SH8K32GZETB
Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고52,338
-
60V
4.5A (Ta)
65mOhm @ 4.5A, 10V
2.5V @ 1mA
10nC @ 5V
500pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
STL76DN4LF7AG
STMicroelectronics

MOSFET 2N-CH 40V 40A POWERFLAT

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 956pF @ 25V
  • Power - Max: 71W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat™ (5x6)
패키지: -
재고9,030
-
40V
40A (Tc)
6mOhm @ 10A, 10V
2.5V @ 250µA
17nC @ 10V
956pF @ 25V
71W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerFlat™ (5x6)
SQJ504EP-T1_GE3
Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
패키지: -
재고8,388
-
40V
30A (Tc)
7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
2.5V @ 250µA
30nC @ 10V, 85nC @ 10V
1900pF @ 25V, 4600pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
DMP2110UFDB-13
Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V
  • Power - Max: 820mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
패키지: -
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20V
3.2A (Ta)
75mOhm @ 2.8A, 4.5V
1V @ 250µA
12.7nC @ 8V
443pF @ 10V
820mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
SH8KA2TB1
Rohm Semiconductor

MOSFET 2N-CH 30V 8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고6,516
-
30V
8A (Ta)
28mOhm @ 8A, 10V
2.5V @ 1mA
8nC @ 10V
330pF @ 15V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HAT2173NWS-E
Renesas Electronics Corporation

MOSFET N-CH 100V 25A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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-
-
-
-
-
-
-
-
-
-
-
-
DMP2900UV-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.85A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: -
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20V
850mA (Ta)
750mOhm @ 430mA, 4.5V
1V @ 250µA
0.7nC @ 4.5V
49pF @ 16V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
PJQ5948-AU_R2_002A1
Panjit International Inc.

MOSFET 2N-CH 40V 10.6A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 37A (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 778pF @ 25V
  • Power - Max: 2.5W (Ta), 30W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8
패키지: -
재고5,928
Logic Level Gate
40V
10.6A (Ta), 37A (Tc)
12.3mOhm @ 10A, 10V
2.3V @ 50µA
13nC @ 10V
778pF @ 25V
2.5W (Ta), 30W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
DFN5060B-8
SIA915DJ-T4-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 3.7A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
  • Power - Max: 1.9W (Ta), 6.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SC-70-6 Dual
  • Supplier Device Package: PowerPAK® SC-70-6 Dual
패키지: -
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30V
3.7A (Ta), 4.5A (Tc)
87mOhm @ 2.9A, 10V
2.2V @ 250µA
9nC @ 10V
275pF @ 15V
1.9W (Ta), 6.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
DMC2710UDW-7
Diodes Incorporated

MOSFET N/P-CH 20V 0.75A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
  • Power - Max: 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
재고7,758
-
20V
750mA (Ta), 600mA (Ta)
450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V, 0.7nC @ 4.5V
42pF @ 16V, 49pF @ 16V
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
G05NP10S
Goford Semiconductor

MOSFET 100V 5A/6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc), 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V, 200mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 797pF @ 25V, 760pF @ 25V
  • Power - Max: 3W (Tc), 2.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
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100V
5A (Tc), 6A (Tc)
170mOhm @ 1A, 10V, 200mOhm @ 6A, 10V
3V @ 250µA
18nC @ 10V, 25nC @ 10V
797pF @ 25V, 760pF @ 25V
3W (Tc), 2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP