페이지 109 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
VQ1006P-2	Vishay Siliconix	MOSFET 4N-CH 90V 0.4A 14DIP FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 400mA Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: - Supplier Device Package: 14-DIP	패키지: -	재고7,616	Logic Level Gate	90V	400mA	4.5 Ohm @ 1A, 10V	2.5V @ 1mA	-	60pF @ 25V	2W	-55°C ~ 150°C (TJ)	Through Hole	-	14-DIP
APTM20DHM08G	Microsemi Corporation	MOSFET 2N-CH 200V 208A SP6 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고3,376	Standard	200V	208A	10 mOhm @ 104A, 10V	5V @ 5mA	280nC @ 10V	14400pF @ 25V	781W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTC80H15T3G	Microsemi Corporation	MOSFET 4N-CH 800V 28A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Power - Max: 277W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고4,352	Standard	800V	28A	150 mOhm @ 14A, 10V	3.9V @ 2mA	180nC @ 10V	4507pF @ 25V	277W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
CSD88599Q5DC	Texas Instruments	MOSFET ARRAY 2N-CH 60A 22VSON FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 30V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerTFDFN Supplier Device Package: 22-VSON-CLIP (5x6)	패키지: 22-PowerTFDFN	재고5,648	Standard	60V	-	2.1 mOhm @ 30A, 10V	2.5V @ 250µA	27nC @ 4.5V	4840pF @ 30V	12W	-55°C ~ 150°C (TJ)	Surface Mount	22-PowerTFDFN	22-VSON-CLIP (5x6)
AO4620	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고567,240	Logic Level Gate	30V	-	24 mOhm @ 7.2A, 10V	2.6V @ 250µA	11nC @ 10V	448pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ALD210800ASCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 25 Ohm Vgs(th) (Max) @ Id: 10mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고7,344	Logic Level Gate	10.6V	80mA	25 Ohm	10mV @ 10µA	-	15pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
SH8K41GZETB	Rohm Semiconductor	MOSFET 2N-CH 80V 3.4A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 1.4W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,408	Logic Level Gate	80V	3.4A	130 mOhm @ 3.4A, 10V	2.5V @ 1mA	6.6nC @ 5V	600pF @ 10V	1.4W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDS6986AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고983,376	Logic Level Gate	30V	6.5A, 7.9A	29 mOhm @ 6.5A, 10V	3V @ 250µA	17nC @ 10V	720pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDPC8016S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 8PWRCLIP FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A, 35A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	패키지: 8-PowerWDFN	재고4,160	Logic Level Gate	25V	20A, 35A	3.8 mOhm @ 20A, 10V	2.5V @ 250µA	35nC @ 10V	2375pF @ 13V	2.1W, 2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power Clip 56
ZDM4306NTA	Diodes Incorporated	MOSFET 2N-CH 60V 2A SOT-223-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power - Max: 3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	패키지: SOT-223-8	재고19,950	Standard	60V	2A	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
FDS6898AZ_F085	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 9.4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고23,760	Logic Level Gate	20V	9.4A	14 mOhm @ 9.4A, 4.5V	1.5V @ 250µA	23nC @ 4.5V	1821pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7923DN-T1-E3	Vishay Siliconix	MOSFET 2P-CH 30V 4.3A 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고67,332	Logic Level Gate	30V	4.3A	47 mOhm @ 6.4A, 10V	3V @ 250µA	21nC @ 10V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
DMN32D2LDF-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.4A SOT353 FET Type: 2 N-Channel (Dual) Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V Power - Max: 280mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SOT-353	패키지: 5-TSSOP, SC-70-5, SOT-353	재고1,320,000	Logic Level Gate	30V	400mA	1.2 Ohm @ 100mA, 4V	1.2V @ 250µA	-	39pF @ 3V	280mW	-55°C ~ 150°C (TJ)	Surface Mount	5-TSSOP, SC-70-5, SOT-353	SOT-353
SI7288DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 20A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 20V Power - Max: 15.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고104,772	Standard	40V	20A	19 mOhm @ 10A, 10V	2.8V @ 250µA	15nC @ 10V	565pF @ 20V	15.6W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
FDC6506P	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 1.8A SSOT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고3,992,724	Logic Level Gate	30V	1.8A	170 mOhm @ 1.8A, 10V	3V @ 250µA	3.5nC @ 10V	190pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
DI2A8N03PWK2	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 387pF @ 15V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-QFN (2x2)	패키지: -	Request a Quote	-	30V	2.8A (Ta)	72mOhm @ 2A, 4.5V	1.2V @ 250µA	6.8nC @ 4.5V	387pF @ 15V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	6-QFN (2x2)
MCACD20N06HE3-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1191pF @ 25V Power - Max: 35.7W (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PDFN5060-8D	패키지: -	Request a Quote	-	60V	20A (Tc)	30mOhm @ 20A, 10V	2.5V @ 250µA	23nC @ 10V	1191pF @ 25V	35.7W (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PDFN5060-8D
SI1926DL-T1-BE3	Vishay Siliconix	MOSFET 2N-CH 60V 0.34A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta), 370mA (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V Power - Max: 300mW (Ta), 510mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	재고5,400	-	60V	340mA (Ta), 370mA (Tc)	1.4Ohm @ 340mA, 10V	2.5V @ 250µA	1.4nC @ 10V	18.5pF @ 30V	300mW (Ta), 510mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
DMTH4011SPDQ-13	Diodes Incorporated	MOSFET 2N-CH 40V 11.1A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Power - Max: 2.6W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	패키지: -	재고24,369	-	40V	11.1A (Ta), 42A (Tc)	15mOhm @ 20A, 10V	4V @ 250µA	10.6nC @ 10V	805pF @ 20V	2.6W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
AOCA24106E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 20A 6ALPHADFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-AlphaDFN (1.9x1.6)	패키지: -	재고23,940	-	12V	20A (Ta)	5.6mOhm @ 4A, 4.5V	1.1V @ 250µA	18nC @ 4.5V	-	2.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	6-AlphaDFN (1.9x1.6)
MSCSM70TAM19CT3AG	Microchip Technology	SIC 6N-CH 700V 124A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Power - Max: 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	패키지: -	재고9	-	700V	124A (Tc)	19mOhm @ 40A, 20V	2.4V @ 4mA	215nC @ 20V	4500pF @ 700V	365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
AONP38324	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 29A/134A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 134A (Tc), 29A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V, 2.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 15V, 1890pF @ 15V Power - Max: 3.2W (Ta), 69W (Tc), 3.2W (Ta), 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN-EP (3.3x3.3)	패키지: -	Request a Quote	-	30V	29A (Ta), 134A (Tc), 29A (Ta), 110A (Tc)	2.4mOhm @ 20A, 10V, 2.3mOhm @ 20A, 10V	1.8V @ 250µA, 1.9V @ 250µA	38nC @ 10V	1940pF @ 15V, 1890pF @ 15V	3.2W (Ta), 69W (Tc), 3.2W (Ta), 46W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN-EP (3.3x3.3)
CPH6612-TL-E	onsemi	NCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CAB006A12GM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 200A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Vgs(th) (Max) @ Id: 3.6V @ 69mA Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	재고51	-	1200V (1.2kV)	200A (Tj)	6.9mOhm @ 200A, 15V	3.6V @ 69mA	708nC @ 15V	20400pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
DMP2110UVT-7	Diodes Incorporated	MOSFET 2P-CH 20V 1.8A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V Power - Max: 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	재고9,000	-	20V	1.8A (Ta)	150mOhm @ 2.8A, 4.5V	1V @ 250µA	6nC @ 4.5V	443pF @ 6V	740mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN2024LCA4-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V X4-DSN1313- FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN3003LCA8-7	Diodes Incorporated	MOSFET 2N-CH 30V 25A X2-TSN6025 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3722pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, No Lead Supplier Device Package: X2-TSN6025-8	패키지: -	Request a Quote	-	30V	25A (Ta)	2.6mOhm @ 10A, 10V	2.2V @ 1mA	45.5nC @ 4.5V	3722pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, No Lead	X2-TSN6025-8
DI048N04PQ2	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: TDSON-8-4	패키지: -	Request a Quote	-	40V	48A (Tc)	9.6mOhm @ 12A, 10V	2.5V @ 250µA	48nC @ 10V	2270pF @ 20V	27W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	TDSON-8-4

VQ1006P-2

Vishay Siliconix

MOSFET 4N-CH 90V 0.4A 14DIP

FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 400mA
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: 14-DIP

패키지: -

재고7,616

Logic Level Gate

90V

400mA

4.5 Ohm @ 1A, 10V

2.5V @ 1mA

-

60pF @ 25V

2W

-55°C ~ 150°C (TJ)

Through Hole

-

14-DIP

APTM20DHM08G

Microsemi Corporation

MOSFET 2N-CH 200V 208A SP6

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 781W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고3,376

Standard

200V

208A

10 mOhm @ 104A, 10V

5V @ 5mA

280nC @ 10V

14400pF @ 25V

781W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTC80H15T3G

Microsemi Corporation

MOSFET 4N-CH 800V 28A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Power - Max: 277W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고4,352

Standard

800V

28A

150 mOhm @ 14A, 10V

3.9V @ 2mA

180nC @ 10V

4507pF @ 25V

277W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

CSD88599Q5DC

Texas Instruments

MOSFET ARRAY 2N-CH 60A 22VSON

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 30V
Power - Max: 12W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerTFDFN
Supplier Device Package: 22-VSON-CLIP (5x6)

패키지: 22-PowerTFDFN

재고5,648

Standard

60V

-

2.1 mOhm @ 30A, 10V

2.5V @ 250µA

27nC @ 4.5V

4840pF @ 30V

12W

-55°C ~ 150°C (TJ)

Surface Mount

22-PowerTFDFN

22-VSON-CLIP (5x6)

AO4620

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고567,240

Logic Level Gate

30V

-

24 mOhm @ 7.2A, 10V

2.6V @ 250µA

11nC @ 10V

448pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

ALD210800ASCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 25 Ohm
Vgs(th) (Max) @ Id: 10mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고7,344

Logic Level Gate

10.6V

80mA

25 Ohm

10mV @ 10µA

-

15pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

SH8K41GZETB

Rohm Semiconductor

MOSFET 2N-CH 80V 3.4A 8SOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 1.4W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,408

Logic Level Gate

80V

3.4A

130 mOhm @ 3.4A, 10V

2.5V @ 1mA

6.6nC @ 5V

600pF @ 10V

1.4W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDS6986AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고983,376

Logic Level Gate

30V

6.5A, 7.9A

29 mOhm @ 6.5A, 10V

3V @ 250µA

17nC @ 10V

720pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDPC8016S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 8PWRCLIP

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A, 35A
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V
Power - Max: 2.1W, 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power Clip 56

패키지: 8-PowerWDFN

재고4,160

Logic Level Gate

25V

20A, 35A

3.8 mOhm @ 20A, 10V

2.5V @ 250µA

35nC @ 10V

2375pF @ 13V

2.1W, 2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power Clip 56

ZDM4306NTA

Diodes Incorporated

MOSFET 2N-CH 60V 2A SOT-223-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

패키지: SOT-223-8

재고19,950

Standard

60V

2A

330 mOhm @ 3A, 10V

3V @ 1mA

-

350pF @ 25V

3W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

FDS6898AZ_F085

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 9.4A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고23,760

Logic Level Gate

20V

9.4A

14 mOhm @ 9.4A, 4.5V

1.5V @ 250µA

23nC @ 4.5V

1821pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7923DN-T1-E3

Vishay Siliconix

MOSFET 2P-CH 30V 4.3A 1212-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고67,332

Logic Level Gate

30V

4.3A

47 mOhm @ 6.4A, 10V

3V @ 250µA

21nC @ 10V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

DMN32D2LDF-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.4A SOT353

FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Power - Max: 280mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SOT-353

패키지: 5-TSSOP, SC-70-5, SOT-353

재고1,320,000

Logic Level Gate

30V

400mA

1.2 Ohm @ 100mA, 4V

1.2V @ 250µA

-

39pF @ 3V

280mW

-55°C ~ 150°C (TJ)

Surface Mount

5-TSSOP, SC-70-5, SOT-353

SOT-353

SI7288DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 20A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 20V
Power - Max: 15.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고104,772

Standard

40V

20A

19 mOhm @ 10A, 10V

2.8V @ 250µA

15nC @ 10V

565pF @ 20V

15.6W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

FDC6506P

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 1.8A SSOT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고3,992,724

Logic Level Gate

30V

1.8A

170 mOhm @ 1.8A, 10V

3V @ 250µA

3.5nC @ 10V

190pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

DI2A8N03PWK2

Diotec Semiconductor

IC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 387pF @ 15V
Power - Max: 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-QFN (2x2)

패키지: -

Request a Quote

-

30V

2.8A (Ta)

72mOhm @ 2A, 4.5V

1.2V @ 250µA

6.8nC @ 4.5V

387pF @ 15V

1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

6-QFN (2x2)

MCACD20N06HE3-TP

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1191pF @ 25V
Power - Max: 35.7W (Tj)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PDFN5060-8D

패키지: -

Request a Quote

-

60V

20A (Tc)

30mOhm @ 20A, 10V

2.5V @ 250µA

23nC @ 10V

1191pF @ 25V

35.7W (Tj)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PDFN5060-8D

SI1926DL-T1-BE3

Vishay Siliconix

MOSFET 2N-CH 60V 0.34A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta), 370mA (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Power - Max: 300mW (Ta), 510mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

재고5,400

-

60V

340mA (Ta), 370mA (Tc)

1.4Ohm @ 340mA, 10V

2.5V @ 250µA

1.4nC @ 10V

18.5pF @ 30V

300mW (Ta), 510mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

DMTH4011SPDQ-13

Diodes Incorporated

MOSFET 2N-CH 40V 11.1A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Power - Max: 2.6W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

패키지: -

재고24,369

-

40V

11.1A (Ta), 42A (Tc)

15mOhm @ 20A, 10V

4V @ 250µA

10.6nC @ 10V

805pF @ 20V

2.6W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

AOCA24106E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 20A 6ALPHADFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.7W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-AlphaDFN (1.9x1.6)

패키지: -

재고23,940

-

12V

20A (Ta)

5.6mOhm @ 4A, 4.5V

1.1V @ 250µA

18nC @ 4.5V

-

2.7W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

6-AlphaDFN (1.9x1.6)

MSCSM70TAM19CT3AG

Microchip Technology

SIC 6N-CH 700V 124A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Power - Max: 365W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

패키지: -

재고9

-

700V

124A (Tc)

19mOhm @ 40A, 20V

2.4V @ 4mA

215nC @ 20V

4500pF @ 700V

365W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

AONP38324

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 29A/134A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 134A (Tc), 29A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V, 2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 15V, 1890pF @ 15V
Power - Max: 3.2W (Ta), 69W (Tc), 3.2W (Ta), 46W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)

패키지: -

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-

30V

29A (Ta), 134A (Tc), 29A (Ta), 110A (Tc)

2.4mOhm @ 20A, 10V, 2.3mOhm @ 20A, 10V

1.8V @ 250µA, 1.9V @ 250µA

38nC @ 10V

1940pF @ 15V, 1890pF @ 15V

3.2W (Ta), 69W (Tc), 3.2W (Ta), 46W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN-EP (3.3x3.3)

CPH6612-TL-E

onsemi

NCH+NCH 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

CAB006A12GM3

Wolfspeed, Inc.

SIC 2N-CH 1200V 200A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

재고51

-

1200V (1.2kV)

200A (Tj)

6.9mOhm @ 200A, 15V

3.6V @ 69mA

708nC @ 15V

20400pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

DMP2110UVT-7

Diodes Incorporated

MOSFET 2P-CH 20V 1.8A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
Power - Max: 740mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

재고9,000

-

20V

1.8A (Ta)

150mOhm @ 2.8A, 4.5V

1V @ 250µA

6nC @ 4.5V

443pF @ 6V

740mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN2024LCA4-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V X4-DSN1313-

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

DMN3003LCA8-7

Diodes Incorporated

MOSFET 2N-CH 30V 25A X2-TSN6025

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3722pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, No Lead
Supplier Device Package: X2-TSN6025-8

패키지: -

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-

30V

25A (Ta)

2.6mOhm @ 10A, 10V

2.2V @ 1mA

45.5nC @ 4.5V

3722pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, No Lead

X2-TSN6025-8

DI048N04PQ2

Diotec Semiconductor

IC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: TDSON-8-4

패키지: -

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-

40V

48A (Tc)

9.6mOhm @ 12A, 10V

2.5V @ 250µA

48nC @ 10V

2270pF @ 20V

27W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

TDSON-8-4