페이지 110 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7507PBF	Infineon Technologies	MOSFET N/P-CH DUAL 20V MICRO-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고7,952	Logic Level Gate	20V	2.4A, 1.7A	140 mOhm @ 1.7A, 4.5V	700mV @ 250µA (Min)	8nC @ 4.5V	260pF @ 15V	1.25W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
AO4801HL	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 5A 8SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,192	-	-	-	-	-	-	-	-	-	-	-	-
SI4804BDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고45,912	Logic Level Gate	30V	5.7A	22 mOhm @ 7.5A, 10V	3V @ 250µA	11nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI5504DC-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 2.9A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	패키지: 8-SMD, Flat Lead	재고1,545,276	Logic Level Gate	30V	2.9A, 2.1A	85 mOhm @ 2.9A, 10V	1V @ 250µA (Min)	7.5nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
FDS3812	Fairchild/ON Semiconductor	MOSFET 2N-CH 80V 3.4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 74 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 40V Power - Max: 900mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고215,088	Logic Level Gate	80V	3.4A	74 mOhm @ 3.4A, 10V	4V @ 250µA	18nC @ 10V	634pF @ 40V	900mW	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTC60TAM24TPG	Microsemi Corporation	MOSFET 6N-CH 600V 95A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	패키지: SP6	재고3,264	Super Junction	600V	95A	24 mOhm @ 47.5A, 10V	3.9V @ 5mA	300nC @ 10V	14400pF @ 25V	462W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTC60VDAM24T3G	Microsemi Corporation	MOSFET 2N-CH 600V 95A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고5,024	Super Junction	600V	95A	24 mOhm @ 47.5A, 10V	3.9V @ 5mA	300nC @ 10V	14400pF @ 25V	462W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
VMK90-02T2	IXYS	MOSFET 2N-CH 200V 83A TO-240AA FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 83A Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V Power - Max: 380W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA Supplier Device Package: TO-240AA	패키지: TO-240AA	재고5,888	Standard	200V	83A	25 mOhm @ 500mA, 10V	4V @ 3mA	450nC @ 10V	15000pF @ 25V	380W	-40°C ~ 150°C (TJ)	Chassis Mount	TO-240AA	TO-240AA
ALD212908ASAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,184	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AOD607A	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V TO252-4 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V, 27 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V Power - Max: 19W (Tc), 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD	재고7,328	Standard	30V	8A (Tc), 12A (Tc)	25 mOhm @ 8A, 10V, 27 mOhm @ 12A, 10V	2.6V @ 250µA, 2.4V @ 250µA	7nC @ 4.5V, 12nC @ 4.5V	395pF @ 15V, 730pF @ 15V	19W (Tc), 30W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
DMC3025LNS-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI333 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V Power - Max: 1.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	패키지: 8-PowerVDFN	재고3,376	Standard	30V	7.2A (Ta), 6.8A (Ta)	25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V	2V @ 250µA	4.6nC @ 4.5V, 9.5nC @ 4.5V	500pF @ 15V, 1188pF @ 15V	1.2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
ZXMC6A09DN8TA	Diodes Incorporated	MOSFET N/P-CH 60V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.7A Rds On (Max) @ Id, Vgs: 45 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고497,280	Logic Level Gate	60V	3.9A, 3.7A	45 mOhm @ 8.2A, 10V	1V @ 250µA (Min)	24.2nC @ 10V	1407pF @ 40V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SSM6L61NU,LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 4A UDFN6 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고23,022	Standard	20V	4A	-	-	-	-	-	-	Surface Mount	6-WDFN Exposed Pad	6-UDFN (2x2)
SQ9945BEY-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 5.4A FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Power - Max: 4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고25,446	Logic Level Gate	60V	5.4A	64 mOhm @ 3.4A, 10V	2.5V @ 250µA	12nC @ 10V	470pF @ 25V	4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMG4511SK4-13	Diodes Incorporated	MOSFET N/P-CH 35V TO252-4L FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Power - Max: 1.54W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD	재고69,240	Logic Level Gate	35V	5.3A, 5A	35 mOhm @ 8A, 10V	3V @ 250µA	18.7nC @ 10V	850pF @ 25V	1.54W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
FDMB3800N	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 4.8A MICROFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V Power - Max: 750mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-MLP, MicroFET (3x1.9)	패키지: 8-PowerWDFN	재고880,980	Logic Level Gate	30V	4.8A	40 mOhm @ 4.8A, 10V	3V @ 250µA	5.6nC @ 5V	465pF @ 15V	750mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-MLP, MicroFET (3x1.9)
CAB530M12BM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 530A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 530A Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V Vgs(th) (Max) @ Id: 3.6V @ 140mA Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고21	-	1200V (1.2kV)	530A	3.55mOhm @ 530A, 15V	3.6V @ 140mA	1362nC @ 4V	39600pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
FF1MR12KM1HPHPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고48	-	-	-	-	-	-	-	-	-	-	-	-
MTI200WX75GD-SMD	IXYS	MOSFET 6N-CH 75V 255A ISOPLUS FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 255A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL™ Supplier Device Package: ISOPLUS-DIL™	패키지: -	Request a Quote	-	75V	255A (Tc)	1.3mOhm @ 100A, 10V	3.8V @ 275µA	155nC @ 10V	14400pF @ 38V	-	-55°C ~ 175°C (TJ)	Surface Mount	ISOPLUS-DIL™	ISOPLUS-DIL™
UT6JB5TCR	Rohm Semiconductor	MOSFET 2P-CH 40V 3.5A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	패키지: -	재고7,044	-	40V	3.5A (Ta)	122mOhm @ 3.5A, 10V	2.5V @ 1mA	6.2nC @ 10V	265pF @ 20V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
FDW2509NZ	Fairchild Semiconductor	MOSFET 2N-CH 20V 7.1A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1263pF @ 10V Power - Max: 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	Request a Quote	-	20V	7.1A (Ta)	20mOhm @ 7.1A, 4.5V	1.5V @ 250µA	19nC @ 4.5V	1263pF @ 10V	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
6LP04CH-TL-E-SY	Sanyo	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SP8K32HZGTB	Rohm Semiconductor	MOSFET 2N-CH 60V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고6,690	-	60V	4.5A (Ta)	65mOhm @ 4.5A, 10V	2.5V @ 1mA	10nC @ 5V	500pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SIZF928DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 33A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc) Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	재고18,192	-	30V	33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)	2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V	2V @ 250µA	-	-	3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
SP8K3TB1	Rohm Semiconductor	MOSFET 2N-CH 30V 7A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	Logic Level Gate, 4V Drive	30V	7A (Ta)	24mOhm @ 7A, 10V	2.5V @ 1mA	11.8nC @ 5V	600pF @ 10V	2W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
QH8KC6TCR	Rohm Semiconductor	MOSFET 2N-CH 60V 5.5A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: -	재고9,876	-	60V	5.5A (Ta)	30mOhm @ 5.5A, 10V	2.5V @ 1mA	7.6nC @ 10V	460pF @ 30V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
DMN32D0LV-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.68A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V Power - Max: 480mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	-	30V	680mA (Ta)	1.2Ohm @ 100mA, 4V	1.2V @ 250µA	0.62nC @ 4.5V	44.8pF @ 15V	480mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
BUK7K23-80EX	Nexperia USA Inc.	MOSFET 2N-CH 80V 17A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1542pF @ 25V Power - Max: 53W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: -	재고12,225	-	80V	17A (Ta)	23mOhm @ 10A, 10V	4V @ 1mA	22.8nC @ 10V	1542pF @ 25V	53W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D

IRF7507PBF

Infineon Technologies

MOSFET N/P-CH DUAL 20V MICRO-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Power - Max: 1.25W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고7,952

Logic Level Gate

20V

2.4A, 1.7A

140 mOhm @ 1.7A, 4.5V

700mV @ 250µA (Min)

8nC @ 4.5V

260pF @ 15V

1.25W

-

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

AO4801HL

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8SOIC

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,192

-

SI4804BDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고45,912

Logic Level Gate

30V

5.7A

22 mOhm @ 7.5A, 10V

3V @ 250µA

11nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI5504DC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 2.9A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

패키지: 8-SMD, Flat Lead

재고1,545,276

Logic Level Gate

30V

2.9A, 2.1A

85 mOhm @ 2.9A, 10V

1V @ 250µA (Min)

7.5nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

FDS3812

Fairchild/ON Semiconductor

MOSFET 2N-CH 80V 3.4A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 74 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 40V
Power - Max: 900mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고215,088

Logic Level Gate

80V

3.4A

74 mOhm @ 3.4A, 10V

4V @ 250µA

18nC @ 10V

634pF @ 40V

900mW

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTC60TAM24TPG

Microsemi Corporation

MOSFET 6N-CH 600V 95A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

패키지: SP6

재고3,264

Super Junction

600V

95A

24 mOhm @ 47.5A, 10V

3.9V @ 5mA

300nC @ 10V

14400pF @ 25V

462W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTC60VDAM24T3G

Microsemi Corporation

MOSFET 2N-CH 600V 95A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고5,024

Super Junction

600V

95A

24 mOhm @ 47.5A, 10V

3.9V @ 5mA

300nC @ 10V

14400pF @ 25V

462W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

VMK90-02T2

IXYS

MOSFET 2N-CH 200V 83A TO-240AA

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 83A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
Power - Max: 380W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Supplier Device Package: TO-240AA

패키지: TO-240AA

재고5,888

Standard

200V

83A

25 mOhm @ 500mA, 10V

4V @ 3mA

450nC @ 10V

15000pF @ 25V

380W

-40°C ~ 150°C (TJ)

Chassis Mount

TO-240AA

ALD212908ASAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,184

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AOD607A

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V TO252-4

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V, 27 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Power - Max: 19W (Tc), 30W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD

재고7,328

Standard

30V

8A (Tc), 12A (Tc)

25 mOhm @ 8A, 10V, 27 mOhm @ 12A, 10V

2.6V @ 250µA, 2.4V @ 250µA

7nC @ 4.5V, 12nC @ 4.5V

395pF @ 15V, 730pF @ 15V

19W (Tc), 30W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-4L

DMC3025LNS-13

Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Power - Max: 1.2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8

패키지: 8-PowerVDFN

재고3,376

Standard

30V

7.2A (Ta), 6.8A (Ta)

25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V

2V @ 250µA

4.6nC @ 4.5V, 9.5nC @ 4.5V

500pF @ 15V, 1188pF @ 15V

1.2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8

ZXMC6A09DN8TA

Diodes Incorporated

MOSFET N/P-CH 60V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.7A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고497,280

Logic Level Gate

60V

3.9A, 3.7A

45 mOhm @ 8.2A, 10V

1V @ 250µA (Min)

24.2nC @ 10V

1407pF @ 40V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SSM6L61NU,LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 4A UDFN6

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-UDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고23,022

Standard

20V

4A

-

Surface Mount

6-WDFN Exposed Pad

6-UDFN (2x2)

SQ9945BEY-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 5.4A

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Power - Max: 4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고25,446

Logic Level Gate

60V

5.4A

64 mOhm @ 3.4A, 10V

2.5V @ 250µA

12nC @ 10V

470pF @ 25V

4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMG4511SK4-13

Diodes Incorporated

MOSFET N/P-CH 35V TO252-4L

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Power - Max: 1.54W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD

재고69,240

Logic Level Gate

35V

5.3A, 5A

35 mOhm @ 8A, 10V

3V @ 250µA

18.7nC @ 10V

850pF @ 25V

1.54W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-4L

FDMB3800N

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 4.8A MICROFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Power - Max: 750mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP, MicroFET (3x1.9)

패키지: 8-PowerWDFN

재고880,980

Logic Level Gate

30V

4.8A

40 mOhm @ 4.8A, 10V

3V @ 250µA

5.6nC @ 5V

465pF @ 15V

750mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-MLP, MicroFET (3x1.9)

CAB530M12BM3

Wolfspeed, Inc.

SIC 2N-CH 1200V 530A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 530A
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 140mA
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고21

-

1200V (1.2kV)

530A

3.55mOhm @ 530A, 15V

3.6V @ 140mA

1362nC @ 4V

39600pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

FF1MR12KM1HPHPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고48

-

MTI200WX75GD-SMD

IXYS

MOSFET 6N-CH 75V 255A ISOPLUS

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL™
Supplier Device Package: ISOPLUS-DIL™

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-

75V

255A (Tc)

1.3mOhm @ 100A, 10V

3.8V @ 275µA

155nC @ 10V

14400pF @ 38V

-

-55°C ~ 175°C (TJ)

Surface Mount

ISOPLUS-DIL™

UT6JB5TCR

Rohm Semiconductor

MOSFET 2P-CH 40V 3.5A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Supplier Device Package: HUML2020L8

패키지: -

재고7,044

-

40V

3.5A (Ta)

122mOhm @ 3.5A, 10V

2.5V @ 1mA

6.2nC @ 10V

265pF @ 20V

2W (Ta)

150°C (TJ)

Surface Mount

6-PowerUDFN

HUML2020L8

FDW2509NZ

Fairchild Semiconductor

MOSFET 2N-CH 20V 7.1A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1263pF @ 10V
Power - Max: 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

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-

20V

7.1A (Ta)

20mOhm @ 7.1A, 4.5V

1.5V @ 250µA

19nC @ 4.5V

1263pF @ 10V

1.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

6LP04CH-TL-E-SY

Sanyo

MOSFET P-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

SP8K32HZGTB

Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고6,690

-

60V

4.5A (Ta)

65mOhm @ 4.5A, 10V

2.5V @ 1mA

10nC @ 5V

500pF @ 10V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SIZF928DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 33A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

재고18,192

-

30V

33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)

2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V

2V @ 250µA

-

3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

SP8K3TB1

Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

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Logic Level Gate, 4V Drive

30V

7A (Ta)

24mOhm @ 7A, 10V

2.5V @ 1mA

11.8nC @ 5V

600pF @ 10V

2W (Ta)

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

QH8KC6TCR

Rohm Semiconductor

MOSFET 2N-CH 60V 5.5A TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: -

재고9,876

-

60V

5.5A (Ta)

30mOhm @ 5.5A, 10V

2.5V @ 1mA

7.6nC @ 10V

460pF @ 30V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

DMN32D0LV-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.68A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Power - Max: 480mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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30V

680mA (Ta)

1.2Ohm @ 100mA, 4V

1.2V @ 250µA

0.62nC @ 4.5V

44.8pF @ 15V

480mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

BUK7K23-80EX

Nexperia USA Inc.

MOSFET 2N-CH 80V 17A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1542pF @ 25V
Power - Max: 53W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: -

재고12,225

-

80V

17A (Ta)

23mOhm @ 10A, 10V

4V @ 1mA

22.8nC @ 10V

1542pF @ 25V

53W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D