페이지 134 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
GWS9294	Intersil	MOSFET 2N-CH 20V 10.1A 4QFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power - Max: 3.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-VDFN Supplier Device Package: 4-QFN (2x2)	패키지: 4-VDFN	재고7,552	Standard	20V	10.1A (Ta)	13 mOhm @ 6.5A, 4.5V	1.5V @ 1mA	11nC @ 4V	900pF @ 10V	3.6W	-55°C ~ 150°C (TJ)	Surface Mount	4-VDFN	4-QFN (2x2)
GWM160-0055X1-SLSAM	IXYS	MOSFET 6N-CH 55V 150A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	패키지: 17-SMD, Flat Leads	재고7,824	Standard	55V	150A	3.3 mOhm @ 100A, 10V	4.5V @ 1mA	105nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
AO7600	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 20V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA, 600mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고912,768	Logic Level Gate	20V	900mA, 600mA	300 mOhm @ 900mA, 4.5V	900mV @ 250µA	1.9nC @ 4.5V	120pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
NTMD2C02R2G	ON Semiconductor	MOSFET N/P-CH 20V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A, 3.4A Rds On (Max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고908,460	Logic Level Gate	20V	5.2A, 3.4A	43 mOhm @ 4A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1100pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SLA5059	Sanken	MOSFET 3N/3P-CH 60V 4A 12-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 550 mOhm @ 2A, 4V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	패키지: 12-SIP, Exposed Tab	재고23,388	Logic Level Gate	60V	4A	550 mOhm @ 2A, 4V	2V @ 250µA	-	150pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
CSD87355Q5DT	Texas Instruments	MOSFET 2N-CH 30V 45A 8LSON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 15V Power - Max: 2.8W Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	패키지: 8-PowerLDFN	재고7,728	Logic Level Gate, 5V Drive	30V	45A	-	1.9V @ 250µA	13.7nC @ 4.5V	1860pF @ 15V	2.8W	-55°C ~ 155°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (5x6)
NVMFD5877NLWFT3G	ON Semiconductor	MOSFET 2N-CH 60V 6A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power - Max: 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	패키지: 8-PowerTDFN	재고4,784	Logic Level Gate	60V	6A	39 mOhm @ 7.5A, 10V	3V @ 250µA	20nC @ 10V	540pF @ 25V	3.2W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
ECH8655R-R-TL-H	ON Semiconductor	MOSFET 2N-CH 24V 9A ECH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	패키지: 8-SMD, Flat Lead	재고5,792	-	-	-	-	-	-	-	-	-	Surface Mount	8-SMD, Flat Lead	8-ECH
SIZ926DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V POWERPAIR 6X5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V Power - Max: 20.2W, 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair?	패키지: 8-PowerWDFN	재고4,256	Standard	25V	40A (Tc), 60A (Tc)	4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V	2.2V @ 250µA	19nC @ 10V, 41nC @ 10V	925pF @ 10V, 2150pF @ 10V	20.2W, 40W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair?
CSD88537ND	Texas Instruments	MOSFET 2N-CH 60V 15A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고210,000	Standard	60V	15A	15 mOhm @ 8A, 10V	3.6V @ 250µA	18nC @ 10V	1400pF @ 30V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI5515CDC-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	패키지: 8-SMD, Flat Lead	재고5,792	Logic Level Gate	20V	4A (Tc)	36 mOhm @ 6A, 4.5V	800mV @ 250µA	11.3nC @ 5V	632pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
APTM100H45STG	Microsemi Corporation	MOSFET 4N-CH 1000V 18A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고7,776	Standard	1000V (1kV)	18A	540 mOhm @ 9A, 10V	5V @ 2.5mA	154nC @ 10V	4350pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
SI4210DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V Power - Max: 2.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고83,400	Logic Level Gate	30V	6.5A	35.5 mOhm @ 5A, 10V	2.5V @ 250µA	12nC @ 10V	445pF @ 15V	2.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN61D8LVT-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.63A TSOT26 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: SOT-23-6 Thin, TSOT-23-6	재고5,824	Logic Level Gate	60V	630mA	1.8 Ohm @ 150mA, 5V	2V @ 1mA	0.74nC @ 5V	12.9pF @ 12V	820mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
AO4852	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 60V 3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고56,640	Logic Level Gate	60V	3A	90 mOhm @ 3A, 10V	2.6V @ 250µA	9.2nC @ 10V	450pF @ 30V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMC4028SSD-13	Diodes Incorporated	MOSFET N/P-CH 40V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.8A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고144,060	Logic Level Gate	40V	6.5A, 4.8A	28 mOhm @ 6A, 10V	3V @ 250µA	12.9nC @ 10V	604pF @ 20V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4532CDY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 6A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 4.3A Rds On (Max) @ Id, Vgs: 47 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Power - Max: 2.78W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고426,912	Standard	30V	6A, 4.3A	47 mOhm @ 3.5A, 10V	3V @ 250µA	9nC @ 10V	305pF @ 15V	2.78W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM50AM24SG	Microsemi Corporation	MOSFET 2N-CH 500V 150A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고6,024	Standard	500V	150A	28 mOhm @ 75A, 10V	5V @ 6mA	434nC @ 10V	19600pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
SI4963DY	Fairchild Semiconductor	MOSFET 2P-CH 20V 6.2A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 10V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	-	20V	6.2A (Ta)	33mOhm @ 6.2A, 4.5V	1.5V @ 250µA	20nC @ 4.5V	1456pF @ 10V	900mW (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CPH6619-TL-E	onsemi	PCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FS30ASJ-2-T13-B00	Renesas Electronics Corporation	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN10H220LDV-7	Diodes Incorporated	MOSFET 2N-CH 100V PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V Power - Max: 1.8W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	패키지: -	Request a Quote	-	100V	10.5A (Tc)	222mOhm @ 2A, 10V	2.5V @ 250µA	6.7nC @ 10V	366pF @ 50V	1.8W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
DMTH6010LPDW-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI506 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V Power - Max: 2.8W (Ta), 37.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	패키지: -	Request a Quote	-	60V	13.1A (Ta), 47.6A (Tc)	11mOhm @ 20A, 10V	3V @ 250µA	40.2nC @ 10V	2615pF @ 30V	2.8W (Ta), 37.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
2SD1936T-AC	onsemi	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
QH8KB5TCR	Rohm Semiconductor	MOSFET 2N-CH 40V 4.5A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: -	재고2,898	-	40V	4.5A (Ta)	44mOhm @ 4.5A, 10V	2.5V @ 1mA	3.5nC @ 10V	150pF @ 20V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
MCB60P1200TLB-TUB	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	패키지: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
MSCSM120HM083CAG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PJT7838_R1_00001	Panjit International Inc.	MOSFET 2N-CH 50V 0.4A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고32,565	-	50V	400mA (Ta)	1.45Ohm @ 500mA, 10V	1V @ 250µA	0.95nC @ 4.5V	36pF @ 25V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363

GWS9294

Intersil

MOSFET 2N-CH 20V 10.1A 4QFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power - Max: 3.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VDFN
Supplier Device Package: 4-QFN (2x2)

패키지: 4-VDFN

재고7,552

Standard

20V

10.1A (Ta)

13 mOhm @ 6.5A, 4.5V

1.5V @ 1mA

11nC @ 4V

900pF @ 10V

3.6W

-55°C ~ 150°C (TJ)

Surface Mount

4-VDFN

4-QFN (2x2)

GWM160-0055X1-SLSAM

IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Supplier Device Package: ISOPLUS-DIL?

패키지: 17-SMD, Flat Leads

재고7,824

Standard

55V

150A

3.3 mOhm @ 100A, 10V

4.5V @ 1mA

105nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Flat Leads

ISOPLUS-DIL?

AO7600

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 20V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA, 600mA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고912,768

Logic Level Gate

20V

900mA, 600mA

300 mOhm @ 900mA, 4.5V

900mV @ 250µA

1.9nC @ 4.5V

120pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

NTMD2C02R2G

ON Semiconductor

MOSFET N/P-CH 20V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 3.4A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고908,460

Logic Level Gate

20V

5.2A, 3.4A

43 mOhm @ 4A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

1100pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SLA5059

Sanken

MOSFET 3N/3P-CH 60V 4A 12-SIP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 550 mOhm @ 2A, 4V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Power - Max: 5W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

패키지: 12-SIP, Exposed Tab

재고23,388

Logic Level Gate

60V

4A

550 mOhm @ 2A, 4V

2V @ 250µA

-

150pF @ 10V

5W

150°C (TJ)

Through Hole

12-SIP, Exposed Tab

12-SIP

CSD87355Q5DT

Texas Instruments

MOSFET 2N-CH 30V 45A 8LSON

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 15V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (5x6)

패키지: 8-PowerLDFN

재고7,728

Logic Level Gate, 5V Drive

30V

45A

-

1.9V @ 250µA

13.7nC @ 4.5V

1860pF @ 15V

2.8W

-55°C ~ 155°C (TJ)

Surface Mount

8-PowerLDFN

8-LSON (5x6)

NVMFD5877NLWFT3G

ON Semiconductor

MOSFET 2N-CH 60V 6A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

패키지: 8-PowerTDFN

재고4,784

Logic Level Gate

60V

6A

39 mOhm @ 7.5A, 10V

3V @ 250µA

20nC @ 10V

540pF @ 25V

3.2W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

ECH8655R-R-TL-H

ON Semiconductor

MOSFET 2N-CH 24V 9A ECH8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

패키지: 8-SMD, Flat Lead

재고5,792

-

Surface Mount

8-SMD, Flat Lead

8-ECH

SIZ926DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V POWERPAIR 6X5

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Power - Max: 20.2W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair?

패키지: 8-PowerWDFN

재고4,256

Standard

25V

40A (Tc), 60A (Tc)

4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V

2.2V @ 250µA

19nC @ 10V, 41nC @ 10V

925pF @ 10V, 2150pF @ 10V

20.2W, 40W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair?

CSD88537ND

Texas Instruments

MOSFET 2N-CH 60V 15A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고210,000

Standard

60V

15A

15 mOhm @ 8A, 10V

3.6V @ 250µA

18nC @ 10V

1400pF @ 30V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI5515CDC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 4A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

패키지: 8-SMD, Flat Lead

재고5,792

Logic Level Gate

20V

4A (Tc)

36 mOhm @ 6A, 4.5V

800mV @ 250µA

11.3nC @ 5V

632pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

APTM100H45STG

Microsemi Corporation

MOSFET 4N-CH 1000V 18A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고7,776

Standard

1000V (1kV)

18A

540 mOhm @ 9A, 10V

5V @ 2.5mA

154nC @ 10V

4350pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

SI4210DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Power - Max: 2.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고83,400

Logic Level Gate

30V

6.5A

35.5 mOhm @ 5A, 10V

2.5V @ 250µA

12nC @ 10V

445pF @ 15V

2.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN61D8LVT-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.63A TSOT26

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: SOT-23-6 Thin, TSOT-23-6

재고5,824

Logic Level Gate

60V

630mA

1.8 Ohm @ 150mA, 5V

2V @ 1mA

0.74nC @ 5V

12.9pF @ 12V

820mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

AO4852

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 60V 3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고56,640

Logic Level Gate

60V

3A

90 mOhm @ 3A, 10V

2.6V @ 250µA

9.2nC @ 10V

450pF @ 30V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMC4028SSD-13

Diodes Incorporated

MOSFET N/P-CH 40V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.8A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고144,060

Logic Level Gate

40V

6.5A, 4.8A

28 mOhm @ 6A, 10V

3V @ 250µA

12.9nC @ 10V

604pF @ 20V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4532CDY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 6A 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.3A
Rds On (Max) @ Id, Vgs: 47 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고426,912

Standard

30V

6A, 4.3A

47 mOhm @ 3.5A, 10V

3V @ 250µA

9nC @ 10V

305pF @ 15V

2.78W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM50AM24SG

Microsemi Corporation

MOSFET 2N-CH 500V 150A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고6,024

Standard

500V

150A

28 mOhm @ 75A, 10V

5V @ 6mA

434nC @ 10V

19600pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SI4963DY

Fairchild Semiconductor

MOSFET 2P-CH 20V 6.2A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 10V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

-

20V

6.2A (Ta)

33mOhm @ 6.2A, 4.5V

1.5V @ 250µA

20nC @ 4.5V

1456pF @ 10V

900mW (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CPH6619-TL-E

onsemi

PCH+NCH 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FS30ASJ-2-T13-B00

Renesas Electronics Corporation

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

DMN10H220LDV-7

Diodes Incorporated

MOSFET 2N-CH 100V PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V
Power - Max: 1.8W (Ta), 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

패키지: -

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100V

10.5A (Tc)

222mOhm @ 2A, 10V

2.5V @ 250µA

6.7nC @ 10V

366pF @ 50V

1.8W (Ta), 40W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

DMTH6010LPDW-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V
Power - Max: 2.8W (Ta), 37.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

패키지: -

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60V

13.1A (Ta), 47.6A (Tc)

11mOhm @ 20A, 10V

3V @ 250µA

40.2nC @ 10V

2615pF @ 30V

2.8W (Ta), 37.5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

2SD1936T-AC

onsemi

MOSFET P-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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QH8KB5TCR

Rohm Semiconductor

MOSFET 2N-CH 40V 4.5A TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: -

재고2,898

-

40V

4.5A (Ta)

44mOhm @ 4.5A, 10V

2.5V @ 1mA

3.5nC @ 10V

150pF @ 20V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

MCB60P1200TLB-TUB

IXYS

SIC 2N-CH 1200V 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

패키지: -

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-

1200V (1.2kV)

-

Surface Mount

9-PowerSMD

9-SMPD-B

MSCSM120HM083CAG

Microchip Technology

SIC MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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PJT7838_R1_00001

Panjit International Inc.

MOSFET 2N-CH 50V 0.4A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고32,565

-

50V

400mA (Ta)

1.45Ohm @ 500mA, 10V

1V @ 250µA

0.95nC @ 4.5V

36pF @ 25V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363