페이지 136 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7902PBF	Infineon Technologies	MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A Rds On (Max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,224	Logic Level Gate	30V	6.4A, 9.7A	22.6 mOhm @ 6.4A, 10V	2.25V @ 25µA	6.9nC @ 4.5V	580pF @ 15V	1.4W, 2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7331	Infineon Technologies	MOSFET 2N-CH 20V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고540,156	Logic Level Gate	20V	7A	30 mOhm @ 7A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1340pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS8947A	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 4A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 52 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,000	Logic Level Gate	30V	4A	52 mOhm @ 4A, 10V	3V @ 250µA	27nC @ 10V	730pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
XP0187800L	Panasonic Electronic Components	MOSFET 2N-CH 50V .1A S MINI-5P FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SMini5-G1	패키지: 5-TSSOP, SC-70-5, SOT-353	재고5,216	Logic Level Gate	50V	100mA	12 Ohm @ 10mA, 4V	1.5V @ 1µA	-	12pF @ 3V	150mW	150°C (TJ)	Surface Mount	5-TSSOP, SC-70-5, SOT-353	SMini5-G1
IRF7309PBF	Infineon Technologies	MOSFET N/P-CH 30V 4A/3A 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,904	Standard	30V	4A, 3A	50 mOhm @ 2.4A, 10V	1V @ 250µA	25nC @ 4.5V	520pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM10AM05FTG	Microsemi Corporation	MOSFET 2N-CH 100V 278A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 278A Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고2,384	Standard	100V	278A	5 mOhm @ 125A, 10V	4V @ 5mA	700nC @ 10V	20000pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
VKM40-06P1	IXYS	MOSFET 4N-CH 600V 38A ECO-PAC2 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38A Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	패키지: ECO-PAC2	재고5,200	Standard	600V	38A	70 mOhm @ 25A, 10V	5.5V @ 3mA	220nC @ 10V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	ECO-PAC2	ECO-PAC2
ALD114804ASCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V Vgs(th) (Max) @ Id: 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고5,360	Depletion Mode	10.6V	12mA, 3mA	500 Ohm @ 3.6V	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
SI7214DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.6A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고401,940	Logic Level Gate	30V	4.6A	40 mOhm @ 6.4A, 10V	3V @ 250µA	6.5nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
DMNH6042SSD-13	Diodes Incorporated	MOSFET N-CH FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V Power - Max: 2.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,280	Standard	60V	16.7A (Tc)	50 mOhm @ 5.1A, 10V	3V @ 250µA	4.2nC @ 4.5V	584pF @ 25V	2.1W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO8820	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 7A 8-TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고9,101,088	Logic Level Gate	20V	7A	21 mOhm @ 7A, 10V	1.1V @ 250µA	9nC @ 4.5V	500pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
TSM9933DCS RLG	TSC America Inc.	MOSFET, DUAL, P-CHANNEL, -20V, - FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,216	Standard	20V	4.7A (Tc)	60 mOhm @ 4.7A, 4.5V	1.4V @ 250µA	8.5nC @ 4.5V	640pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SSM6N7002KFU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.3A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power - Max: 285mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: 6-TSSOP, SC-88, SOT-363	재고3,024	Standard	60V	300mA	1.5 Ohm @ 100mA, 10V	2.1V @ 250µA	0.6nC @ 4.5V	40pF @ 10V	285mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
IRF7319TRPBF	Infineon Technologies	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고444,180	Standard	30V	-	29 mOhm @ 5.8A, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
QH8KA2TCR	Rohm Semiconductor	30V NCH+NCH POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V Power - Max: 2.4W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고7,264	-	30V	4.5A	73 mOhm @ 4.5A, 10V	2.5V @ 1mA	3nC @ 10V	125pf @ 15V	2.4W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
EPC2104ENGRT	EPC	MOSFET 2NCH 100V 23A DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고24,582	GaNFET (Gallium Nitride)	100V	23A	6.3 mOhm @ 20A, 5V	2.5V @ 5.5mA	7nC @ 5V	800pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
FCAB21490L1	Panasonic Electronic Components	GATE RESISTOR INTEGRATED DUAL NC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 3570pF @ 10V Power - Max: 3.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-SMD	패키지: 10-SMD, No Lead	재고19,998	Standard	-	-	-	1.4V @ 1.11mA	25nC @ 4V	3570pF @ 10V	3.5W (Ta)	150°C	Surface Mount	10-SMD, No Lead	10-SMD
CSD87335Q3D	Texas Instruments	MOSFET N-CH 30V POWERBLOCK FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (3.3x3.3)	패키지: 8-PowerLDFN	재고43,110	Standard	30V	-	-	1.9V @ 250µA	7.4nC @ 4.5V	1050pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (3.3x3.3)
2N7002PS,115	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.32A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 420mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: 6-TSSOP, SC-88, SOT-363	재고220,128	Logic Level Gate	60V	320mA	1.6 Ohm @ 500mA, 10V	2.4V @ 250µA	0.8nC @ 4.5V	50pF @ 10V	420mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
ZXMHC6A07T8TA	Diodes Incorporated	MOSFET 2N/2P-CH 60V SM8 FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A, 1.3A Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	패키지: SOT-223-8	재고209,964	Logic Level Gate	60V	1.6A, 1.3A	300 mOhm @ 1.8A, 10V	3V @ 250µA	3.2nC @ 10V	166pF @ 40V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
SI4931DY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 6.7A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.7A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,696	Logic Level Gate	12V	6.7A	18 mOhm @ 8.9A, 4.5V	1V @ 350µA	52nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DF11MR12W1M1HFB67BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	패키지: -	재고120	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
SQ4282EY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2367pF @ 15V Power - Max: 3.9W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고7,488	-	30V	8A (Tc)	12.3mOhm @ 15A, 10V	2.5V @ 250µA	47nC @ 10V	2367pF @ 15V	3.9W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDS6900S	Fairchild Semiconductor	MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 8.2A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V, 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 771pF @ 15V, 1238pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	Logic Level Gate	30V	6.9A (Ta), 8.2A (Ta)	30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V	3V @ 250µA, 3V @ 1mA	11nC @ 5V, 17nC @ 5V	771pF @ 15V, 1238pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
UT6JE5TCR	Rohm Semiconductor	MOSFET 2P-CH 100V 1A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	패키지: -	재고8,856	-	100V	1A (Ta)	840mOhm @ 1A, 10V	2.5V @ 1mA	6.7nC @ 10V	90pF @ 50V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
MSQ30C01D	Bruckewell	N+P-Channel MOSFET,dual,30V,TO-2 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (Tc) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	-	30V	5.3A (Ta), 7A (Ta)	28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V	2.5V @ 250µA	-	-	-	-55°C ~ 150°C (Tc)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NXH003P120M3F2PTHG	onsemi	ELITESIC, 3 MOHM SIC M3S MOSFET, FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 350A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V Vgs(th) (Max) @ Id: 4.4V @ 160mA Gate Charge (Qg) (Max) @ Vgs: 1195nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V Power - Max: 979W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: 36-PIM (56.7x62.8)	패키지: -	재고114	-	1200V (1.2kV)	350A (Tc)	5mOhm @ 200A, 18V	4.4V @ 160mA	1195nC @ 20V	20889pF @ 800V	979W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	36-PIM (56.7x62.8)
DMN1001UCA10-7	Diodes Incorporated	MOSFET 2N-CH 12V 20A X2-TSN1820 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 870µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 6V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: X2-TSN1820-10	패키지: -	재고8,967	-	12V	20A (Ta)	3.55mOhm @ 5A, 4.5V	1.4V @ 870µA	29nC @ 4V	2865pF @ 6V	1W	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	X2-TSN1820-10

IRF7902PBF

Infineon Technologies

MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A
Rds On (Max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Power - Max: 1.4W, 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,224

Logic Level Gate

30V

6.4A, 9.7A

22.6 mOhm @ 6.4A, 10V

2.25V @ 25µA

6.9nC @ 4.5V

580pF @ 15V

1.4W, 2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7331

Infineon Technologies

MOSFET 2N-CH 20V 7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고540,156

Logic Level Gate

20V

7A

30 mOhm @ 7A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

1340pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS8947A

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 4A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 52 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,000

Logic Level Gate

30V

4A

52 mOhm @ 4A, 10V

3V @ 250µA

27nC @ 10V

730pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

XP0187800L

Panasonic Electronic Components

MOSFET 2N-CH 50V .1A S MINI-5P

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SMini5-G1

패키지: 5-TSSOP, SC-70-5, SOT-353

재고5,216

Logic Level Gate

50V

100mA

12 Ohm @ 10mA, 4V

1.5V @ 1µA

-

12pF @ 3V

150mW

150°C (TJ)

Surface Mount

5-TSSOP, SC-70-5, SOT-353

SMini5-G1

IRF7309PBF

Infineon Technologies

MOSFET N/P-CH 30V 4A/3A 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,904

Standard

30V

4A, 3A

50 mOhm @ 2.4A, 10V

1V @ 250µA

25nC @ 4.5V

520pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM10AM05FTG

Microsemi Corporation

MOSFET 2N-CH 100V 278A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 278A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고2,384

Standard

100V

278A

5 mOhm @ 125A, 10V

4V @ 5mA

700nC @ 10V

20000pF @ 25V

780W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

VKM40-06P1

IXYS

MOSFET 4N-CH 600V 38A ECO-PAC2

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

패키지: ECO-PAC2

재고5,200

Standard

600V

38A

70 mOhm @ 25A, 10V

5.5V @ 3mA

220nC @ 10V

-

-40°C ~ 150°C (TJ)

Chassis Mount

ECO-PAC2

ALD114804ASCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V
Vgs(th) (Max) @ Id: 380mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고5,360

Depletion Mode

10.6V

12mA, 3mA

500 Ohm @ 3.6V

380mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

SI7214DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4.6A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고401,940

Logic Level Gate

30V

4.6A

40 mOhm @ 6.4A, 10V

3V @ 250µA

6.5nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

DMNH6042SSD-13

Diodes Incorporated

MOSFET N-CH

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,280

Standard

60V

16.7A (Tc)

50 mOhm @ 5.1A, 10V

3V @ 250µA

4.2nC @ 4.5V

584pF @ 25V

2.1W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO8820

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7A 8-TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고9,101,088

Logic Level Gate

20V

7A

21 mOhm @ 7A, 10V

1.1V @ 250µA

9nC @ 4.5V

500pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

TSM9933DCS RLG

TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -20V, -

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,216

Standard

20V

4.7A (Tc)

60 mOhm @ 4.7A, 4.5V

1.4V @ 250µA

8.5nC @ 4.5V

640pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.3A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Power - Max: 285mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

재고3,024

Standard

60V

300mA

1.5 Ohm @ 100mA, 10V

2.1V @ 250µA

0.6nC @ 4.5V

40pF @ 10V

285mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

IRF7319TRPBF

Infineon Technologies

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고444,180

Standard

30V

-

29 mOhm @ 5.8A, 10V

1V @ 250µA

33nC @ 10V

650pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

QH8KA2TCR

Rohm Semiconductor

30V NCH+NCH POWER MOSFET

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Power - Max: 2.4W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고7,264

-

30V

4.5A

73 mOhm @ 4.5A, 10V

2.5V @ 1mA

3nC @ 10V

125pf @ 15V

2.4W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

EPC2104ENGRT

EPC

MOSFET 2NCH 100V 23A DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고24,582

GaNFET (Gallium Nitride)

100V

23A

6.3 mOhm @ 20A, 5V

2.5V @ 5.5mA

7nC @ 5V

800pF @ 50V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

FCAB21490L1

Panasonic Electronic Components

GATE RESISTOR INTEGRATED DUAL NC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 3570pF @ 10V
Power - Max: 3.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-SMD

패키지: 10-SMD, No Lead

재고19,998

Standard

-

1.4V @ 1.11mA

25nC @ 4V

3570pF @ 10V

3.5W (Ta)

150°C

Surface Mount

10-SMD, No Lead

10-SMD

CSD87335Q3D

Texas Instruments

MOSFET N-CH 30V POWERBLOCK

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (3.3x3.3)

패키지: 8-PowerLDFN

재고43,110

Standard

30V

-

1.9V @ 250µA

7.4nC @ 4.5V

1050pF @ 15V

6W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

8-LSON (3.3x3.3)

2N7002PS,115

Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 420mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: 6-TSSOP, SC-88, SOT-363

재고220,128

Logic Level Gate

60V

320mA

1.6 Ohm @ 500mA, 10V

2.4V @ 250µA

0.8nC @ 4.5V

50pF @ 10V

420mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

ZXMHC6A07T8TA

Diodes Incorporated

MOSFET 2N/2P-CH 60V SM8

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.6A, 1.3A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

패키지: SOT-223-8

재고209,964

Logic Level Gate

60V

1.6A, 1.3A

300 mOhm @ 1.8A, 10V

3V @ 250µA

3.2nC @ 10V

166pF @ 40V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

SI4931DY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 6.7A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,696

Logic Level Gate

12V

6.7A

18 mOhm @ 8.9A, 4.5V

1V @ 350µA

52nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DF11MR12W1M1HFB67BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

패키지: -

재고120

-

1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B

SQ4282EY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2367pF @ 15V
Power - Max: 3.9W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고7,488

-

30V

8A (Tc)

12.3mOhm @ 15A, 10V

2.5V @ 250µA

47nC @ 10V

2367pF @ 15V

3.9W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FDS6900S

Fairchild Semiconductor

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V, 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 771pF @ 15V, 1238pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

Logic Level Gate

30V

6.9A (Ta), 8.2A (Ta)

30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V

3V @ 250µA, 3V @ 1mA

11nC @ 5V, 17nC @ 5V

771pF @ 15V, 1238pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

UT6JE5TCR

Rohm Semiconductor

MOSFET 2P-CH 100V 1A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Supplier Device Package: HUML2020L8

패키지: -

재고8,856

-

100V

1A (Ta)

840mOhm @ 1A, 10V

2.5V @ 1mA

6.7nC @ 10V

90pF @ 50V

2W (Ta)

150°C (TJ)

Surface Mount

6-PowerUDFN

HUML2020L8

MSQ30C01D

Bruckewell

N+P-Channel MOSFET,dual,30V,TO-2

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (Tc)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

-

30V

5.3A (Ta), 7A (Ta)

28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V

2.5V @ 250µA

-

-55°C ~ 150°C (Tc)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NXH003P120M3F2PTHG

onsemi

ELITESIC, 3 MOHM SIC M3S MOSFET,

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V
Vgs(th) (Max) @ Id: 4.4V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 1195nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V
Power - Max: 979W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: 36-PIM (56.7x62.8)

패키지: -

재고114

-

1200V (1.2kV)

350A (Tc)

5mOhm @ 200A, 18V

4.4V @ 160mA

1195nC @ 20V

20889pF @ 800V

979W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

36-PIM (56.7x62.8)

DMN1001UCA10-7

Diodes Incorporated

MOSFET 2N-CH 12V 20A X2-TSN1820

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 870µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 6V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: X2-TSN1820-10

패키지: -

재고8,967

-

12V

20A (Ta)

3.55mOhm @ 5A, 4.5V

1.4V @ 870µA

29nC @ 4V

2865pF @ 6V

1W

-55°C ~ 150°C (TJ)

Surface Mount

10-SMD, No Lead

X2-TSN1820-10