페이지 139 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 어레이

기록 5,684
페이지  139/203
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제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AUIRF7341Q
Infineon Technologies

MOSFET 2N-CH 55V 5.1A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,872
Logic Level Gate
55V
5.1A
50 mOhm @ 5.1A, 10V
3V @ 250µA
44nC @ 10V
780pF @ 25V
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ECH8662-TL-H
ON Semiconductor

MOSFET 2N-CH 40V 6.5A ECH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 20V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
패키지: 8-SMD, Flat Lead
재고4,096
Logic Level Gate
40V
6.5A
30 mOhm @ 3.5A, 4.5V
-
12nC @ 4.5V
1130pF @ 20V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
hot FDW2502P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 4.4A 8-TSSO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 10V
  • Power - Max: 600mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고237,648
Logic Level Gate
20V
4.4A
35 mOhm @ 4.4A, 4.5V
1.5V @ 250µA
21nC @ 5V
1465pF @ 10V
600mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
APTC60HM70T3G
Microsemi Corporation

MOSFET 4N-CH 600V 39A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고5,520
Standard
600V
39A
70 mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
7000pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTM50DHM65T3G
Microsemi Corporation

MOSFET 2N-CH 500V 51A SP3

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 51A
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 42A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고7,664
Standard
500V
51A
78 mOhm @ 42A, 10V
5V @ 2.5mA
340nC @ 10V
10800pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
DMN1029UFDB-13
Diodes Incorporated

MOSFET 2N-CH 12V 5.6A 6UDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
패키지: 6-UDFN Exposed Pad
재고2,848
Standard
12V
5.6A
29 mOhm @ 5A, 4.5V
1V @ 250µA
19.6nC @ 8V
914pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
hot NTMD6N02R2G
ON Semiconductor

MOSFET 2N-CH 20V 3.92A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.92A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
  • Power - Max: 730mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고534,024
Logic Level Gate
20V
3.92A
35 mOhm @ 6A, 4.5V
1.2V @ 250µA
20nC @ 4.5V
1100pF @ 16V
730mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot ZXMD63C03XTA
Diodes Incorporated

MOSFET N/P-CH 30V 8-MSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고1,954,092
Logic Level Gate
30V
-
135 mOhm @ 1.7A, 10V
1V @ 250µA (Min)
8nC @ 10V
290pF @ 25V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hot ZXMN3A04DN8TA
Diodes Incorporated

MOSFET 2N-CH 30V 6.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 12.6A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
  • Power - Max: 1.81W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고64,968
Logic Level Gate
30V
6.5A
20 mOhm @ 12.6A, 10V
1V @ 250µA (Min)
36.8nC @ 10V
1890pF @ 15V
1.81W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN2023UCB4-7
Diodes Incorporated

MOSFET 2N-CH X1-WLB1818-4

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.45W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLBGA
  • Supplier Device Package: X1-WLB1818-4
패키지: 4-XFBGA, WLBGA
재고6,528
Logic Level Gate
-
-
-
-
29nC @ 4.5V
-
1.45W
-55°C ~ 150°C (TJ)
Surface Mount
4-XFBGA, WLBGA
X1-WLB1818-4
hot ZXMP6A16DN8TA
Diodes Incorporated

MOSFET 2P-CH 60V 2.9A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
  • Power - Max: 1.81W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고512,964
Logic Level Gate
60V
2.9A
85 mOhm @ 2.9A, 10V
1V @ 250µA (Min)
24.2nC @ 10V
1021pF @ 30V
1.81W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FDMB2307NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 6-MLP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-MLP (2x3)
패키지: 6-WDFN Exposed Pad
재고158,748
Logic Level Gate
-
-
-
-
28nC @ 5V
-
800mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-MLP (2x3)
hot DMN2016LFG-7
Diodes Incorporated

MOSFET 2N-CH 20V 5.2A 8UDFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1472pF @ 10V
  • Power - Max: 770mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: U-DFN3030-8
패키지: 8-PowerUDFN
재고25,908
Logic Level Gate
20V
5.2A
18 mOhm @ 6A, 4.5V
1.1V @ 250µA
16nC @ 4.5V
1472pF @ 10V
770mW
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerUDFN
U-DFN3030-8
hot SSM6N58NU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
패키지: 6-WDFN Exposed Pad
재고180,000
Logic Level Gate, 1.8V Drive
30V
4A
84 mOhm @ 2A, 4.5V
1V @ 1mA
1.8nC @ 4.5V
129pF @ 15V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
MSCSM120AM02T6LIAG
Microchip Technology

SIC 2N-CH 1200V 947A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 36mA
  • Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
  • Power - Max: 3.75kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
-
1200V (1.2kV)
947A (Tc)
2.6mOhm @ 480A, 20V
2.8V @ 36mA
2784nC @ 20V
36200pF @ 1000V
3.75kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
APTMC120HRM40CT3AG
Microchip Technology

SIC 2N-CH 1200V 73A SP3

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 12.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
  • Power - Max: 375W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3
패키지: -
Request a Quote
-
1200V (1.2kV)
73A (Tc)
34mOhm @ 50A, 20V
3V @ 12.5mA
161nC @ 5V
2788pF @ 1000V
375W
-40°C ~ 150°C (TJ)
Chassis Mount
Module
SP3
MSCSM170TAM23CTPAG
Microchip Technology

SIC 6N-CH 1700V 122A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
  • Power - Max: 588W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
재고15
-
1700V (1.7kV)
122A (Tc)
22.5mOhm @ 60A, 20V
3.2V @ 5mA
356nC @ 20V
6600pF @ 1000V
588W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
HP8JE5TB1
Rohm Semiconductor

-100V 12.5A, DUAL PCH+PCH, HSOP8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V
  • Power - Max: 3W (Ta), 21W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
패키지: -
Request a Quote
-
100V
4.5A (Ta), 12.5A (Tc)
127mOhm @ 4.5A, 10V
2.5V @ 1mA
38nC @ 10V
1370pF @ 50V
3W (Ta), 21W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
MSCSM120AM03T6LIAG
Microchip Technology

SIC 2N-CH 1200V 805A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
  • Power - Max: 3.215kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
-
1200V (1.2kV)
805A (Tc)
3.1mOhm @ 400A, 20V
2.8V @ 30mA
2320nC @ 20V
30200pF @ 1000V
3.215kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
TSM2537CQ
Taiwan Semiconductor Corporation

MOSFET N/P-CH 20V 11.6A/9A 6TDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V
  • Power - Max: 6.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-TDFN (2x2)
패키지: -
Request a Quote
Logic Level Gate, 1.8V Drive
20V
11.6A (Tc), 9A (Tc)
30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
1V @ 250µA
9.1nC @ 4.5V, 9.8nC @ 4.5V
677pF @ 10V, 744pF @ 10V
6.25W
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-TDFN (2x2)
FDSS2407S_B82086
Fairchild Semiconductor

MOSFET 2N-CH 62V 3.3A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 62V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
  • Power - Max: 2.27W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
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Logic Level Gate
62V
3.3A (Ta)
110mOhm @ 3.3A, 10V
3V @ 250µA
4.3nC @ 5V
300pF @ 15V
2.27W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
TSM4953DCS
Taiwan Semiconductor Corporation

MOSFET 2P-CH 30V 4.9A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V
  • Power - Max: 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
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-
30V
4.9A (Ta)
60mOhm @ 4.9A, 10V
3V @ 250µA
28nC @ 10V
745pF @ 15V
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMTH10H038SPDWQ-13
Diodes Incorporated

MOSFET 2N-CH 100V 25A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V
  • Power - Max: 2.7W (Ta), 39W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
패키지: -
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-
100V
25A (Tc)
33mOhm @ 10A, 10V
4V @ 250µA
8nC @ 10V
544pF @ 50V
2.7W (Ta), 39W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
PSMN6R1-40HLX
Nexperia USA Inc.

MOSFET 2N-CH 40V 40A LFPAK56D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Power - Max: 64W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
패키지: -
재고4,788
Logic Level Gate
40V
40A (Ta)
6.1mOhm @ 10A, 10V
2.1V @ 1mA
22.2nC @ 5V
3000pF @ 25V
64W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
PJT7600_R1_00001
Panjit International Inc.

MOSFET N/P-CH 20V 1A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
재고41,052
-
20V
1A (Ta), 700mA (Ta)
150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
1V @ 250µA
1.6nC @ 4.5V, 2.2nC @ 4.5V
92pF @ 10V, 151pF @ 10V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
KFC6B21B70L
Nuvoton Technology Corporation

DUAL NCH MOSFET 12V, 9.0A, 4.6MO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFLGA, CSP
  • Supplier Device Package: 6-CSP (1.24x1.89)
패키지: -
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-
12V
9A (Ta)
5.5mOhm @ 4.5A, 4.5V
1.4V @ 260µA
15nC @ 4V
1810pF @ 10V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-XFLGA, CSP
6-CSP (1.24x1.89)
UT6JC5TCR
Rohm Semiconductor

MOSFET 2P-CH 60V 2.5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
패키지: -
재고7,023
-
60V
2.5A (Ta)
280mOhm @ 2.5A, 10V
2.5V @ 1mA
6.3nC @ 10V
265pF @ 30V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
SQ3989EV-T1_BE3
Vishay Siliconix

MOSFET 2P-CH 30V 2.5A 6TSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.67W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
패키지: -
재고27,000
-
30V
2.5A (Tc)
155mOhm @ 400mA, 10V
1.5V @ 250µA
11.1nC @ 10V
-
1.67W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP