페이지 158 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 어레이

기록 5,684
페이지  158/203
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제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7751TRPBF
Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고31,176
Logic Level Gate
30V
4.5A
35 mOhm @ 4.5A, 10V
2.5V @ 250µA
44nC @ 10V
1464pF @ 25V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
EPC2103ENG
EPC

TRANS GAN 2N-CH 80V BUMPED DIE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 23A
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 7mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고2,768
GaNFET (Gallium Nitride)
80V
23A
5.5 mOhm @ 20A, 5V
2.5V @ 7mA
6.5nC @ 5V
760pF @ 40V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
APTC60DSKM45CT1G
Microsemi Corporation

MOSFET 2N-CH 600V 49A SP1

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 49A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고4,240
Super Junction
600V
49A
45 mOhm @ 24.5A, 10V
3.9V @ 3mA
150nC @ 10V
7200pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
hot TPC8208(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 5A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
패키지: 8-SOIC (0.173", 4.40mm Width)
재고19,932
Logic Level Gate
20V
5A
50 mOhm @ 2.5A, 4V
1.2V @ 200µA
9.5nC @ 5V
780pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
hot SI4914DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 5.5A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.7A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W, 1.16W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고856,104
Logic Level Gate
30V
5.5A, 5.7A
23 mOhm @ 7A, 10V
2.5V @ 250µA
8.5nC @ 4.5V
-
1.1W, 1.16W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SSD2007ASTF
Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 2A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,672
Logic Level Gate
50V
2A
300 mOhm @ 1.5A, 10V
4V @ 250µA
15nC @ 10V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
ZDM4206NTA
Diodes Incorporated

MOSFET 2N-CH 60V 1A SOT-223-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1A
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
  • Power - Max: 2.75W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SOT-223
패키지: SOT-223-8
재고5,792
Logic Level Gate
60V
1A
1 Ohm @ 1.5A, 10V
3V @ 1mA
-
100pF @ 25V
2.75W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SOT-223
VMM90-09F
IXYS

MOSFET 2N-CH 900V 85A Y3-LI

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 85A
  • Rds On (Max) @ Id, Vgs: 76 mOhm @ 65A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 960nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y3-Li
  • Supplier Device Package: Y3-Li
패키지: Y3-Li
재고3,792
Standard
900V
85A
76 mOhm @ 65A, 10V
5V @ 30mA
960nC @ 10V
-
-
-40°C ~ 150°C (TJ)
Chassis Mount
Y3-Li
Y3-Li
APTM100H35FTG
Microsemi Corporation

MOSFET 4N-CH 1000V 22A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 22A
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
패키지: SP4
재고6,048
Standard
1000V (1kV)
22A
420 mOhm @ 11A, 10V
5V @ 2.5mA
186nC @ 10V
5200pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
NVMFD5853NT1G
ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고2,048
Logic Level Gate
40V
12A
10 mOhm @ 15A, 10V
4V @ 250µA
24nC @ 10V
1225pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMD6P02R2G
ON Semiconductor

MOSFET 2P-CH 20V 4.8A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V
  • Power - Max: 750mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,376
Logic Level Gate
20V
4.8A
33 mOhm @ 6.2A, 4.5V
1.2V @ 250µA
35nC @ 4.5V
1700pF @ 16V
750mW
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMG6301UDW-13
Diodes Incorporated

MOSFET 2N-CH 25V 0.24A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 240mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고4,592
Standard
25V
240mA
4 Ohm @ 400mA, 4.5V
1.5V @ 250µA
0.36nC @ 4.5V
27.9pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot IRF7301TRPBF
Infineon Technologies

MOSFET 2N-CH 20V 5.2A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,496
Logic Level Gate
20V
5.2A
50 mOhm @ 2.6A, 4.5V
700mV @ 250µA
20nC @ 4.5V
660pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
VT6J1T2CR
Rohm Semiconductor

MOSFET 2P-CH 20V 0.1A VMT6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Power - Max: 120mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: VMT6
패키지: 6-SMD, Flat Leads
재고2,944
Logic Level Gate, 1.2V Drive
20V
100mA
3.8 Ohm @ 100mA, 4.5V
1V @ 100µA
-
15pF @ 10V
120mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
VMT6
HS8K11TB
Rohm Semiconductor

MOSFET 2N-CH 30V 7A/11A HSML

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 11A
  • Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: HSML3030L10
패키지: 8-UDFN Exposed Pad
재고29,604
Logic Level Gate
30V
7A, 11A
17.9 mOhm @ 7A, 10V
2.5V @ 1mA
11.1nC @ 10V
500pF @ 15V
2W
150°C (TJ)
Surface Mount
8-UDFN Exposed Pad
HSML3030L10
hot DMC2020USD-13
Diodes Incorporated

MOSFET N/P-CH 20V 7.8A/6.3A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A, 6.3A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고830,028
Logic Level Gate
20V
7.8A, 6.3A
20 mOhm @ 7A, 4.5V
1.5V @ 250µA
11.6nC @ 4.5V
1149pF @ 10V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDPC8012S
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 13A/26A PWR CLP

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 13A, 26A
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 12A, 4.5V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
  • Power - Max: 800mW, 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: Powerclip-33
패키지: 8-PowerWDFN
재고28,608
Logic Level Gate
25V
13A, 26A
7 mOhm @ 12A, 4.5V
2.2V @ 250µA
8nC @ 4.5V
1075pF @ 13V
800mW, 900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
Powerclip-33
FDMA3027PZ-F130
onsemi

SMALL SIGNAL N-CHANNEL MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-MicroFET (2x2)
패키지: -
Request a Quote
-
-
-
-
-
-
-
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-MicroFET (2x2)
SK2S240-45
SMC Diode Solutions

45V, 240A, SOT-227, POWER MODULE

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고108
-
-
-
-
-
-
-
-
-
-
-
-
NVMJD016N06CTWG
onsemi

MOSFET N-CH 60V LFPAK56

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MSCSM170TLM11CAG
Microchip Technology

SIC 4N-CH 1700V 238A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
  • Power - Max: 1114W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
패키지: -
재고15
-
1700V (1.7kV)
238A (Tc)
11.3mOhm @ 120A, 20V
3.2V @ 10mA
712nC @ 20V
13200pF @ 1000V
1114W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
AON6984
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 19A/50A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 50A (Tc), 26A (Ta), 82A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V, 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 15V, 2120pF @ 15V
  • Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-DFN (5x6)
패키지: -
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30V
19A (Ta), 50A (Tc), 26A (Ta), 82A (Tc)
5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
2.2V @ 250µA, 1.9V @ 250µA
12.8nC @ 10V, 37nC @ 10V
810pF @ 15V, 2120pF @ 15V
3.1W (Ta), 21W (Tc), 3.1W (Ta), 31W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-DFN (5x6)
CAB006A12GM3T
Wolfspeed, Inc.

SIC 2N-CH 1200V 200A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
  • Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 69mA
  • Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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-
1200V (1.2kV)
200A (Tj)
6.9mOhm @ 200A, 15V
3.6V @ 69mA
708nC @ 15V
20400pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
DMN12M3UCA6-7
Diodes Incorporated

MOSFET 2N-CH 14V X4-DSN3118-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 14V
  • Current - Continuous Drain (Id) @ 25°C: 24.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1.41mA
  • Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 4593pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X4-DSN3118-6
패키지: -
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14V
24.4A (Ta)
2.75mOhm @ 6A, 4.5V
1.4V @ 1.41mA
68.6nC @ 4V
4593pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X4-DSN3118-6
GCMX080A120B2H1P
SemiQ

SIC 1200V 80M MOSFET FULL-BRIDGE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
  • Power - Max: 119W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
재고90
-
1200V (1.2kV)
27A (Tc)
100mOhm @ 20A, 20V
4V @ 10mA
56nC @ 20V
1362pF @ 800V
119W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70AM07T3AG
Microchip Technology

SIC 2N-CH 700V 353A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
  • Power - Max: 988W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
재고18
-
700V
353A (Tc)
6.4mOhm @ 120A, 20V
2.4V @ 12mA
645nC @ 20V
13500pF @ 700V
988W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120AM50T1AG
Microchip Technology

SIC 2N-CH 1200V 55A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
  • Power - Max: 245W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
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1200V (1.2kV)
55A (Tc)
50mOhm @ 40A, 20V
2.7V @ 1mA
137nC @ 20V
1990pF @ 1000V
245W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
SIZ980DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 20A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
  • Power - Max: 20W, 66W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
패키지: -
재고21,444
-
30V
20A (Tc), 60A (Tc)
6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
2.2V @ 250µA
8.1nC @ 4.5V, 35nC @ 4.5V
930pF @ 15V, 4600pF @ 15V
20W, 66W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)