페이지 160 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF9953	Infineon Technologies	MOSFET 2P-CH 30V 2.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고231,708	Logic Level Gate	30V	2.3A	250 mOhm @ 1A, 10V	1V @ 250µA	12nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
RJM0603JSC-00#12	Renesas Electronics America	MOSFET 3N/3P-CH 60V 20A HSOP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Power - Max: 54W Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Supplier Device Package: 20-HSOP	패키지: 20-SOIC (0.433", 11.00mm Width) Exposed Pad	재고6,400	Logic Level Gate, 4.5V Drive	60V	20A	20 mOhm @ 10A, 10V	2.5V @ 1mA	43nC @ 10V	2600pF @ 10V	54W	175°C	Surface Mount	20-SOIC (0.433", 11.00mm Width) Exposed Pad	20-HSOP
ZXMP3F37DN8TA	Diodes Incorporated	MOSFET 2P-CH 30V 5.7A 8SO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1678pF @ 15V Power - Max: 1.81W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고466,992	Logic Level Gate	30V	5.7A	25 mOhm @ 7.1A, 10V	3V @ 250µA	31.6nC @ 10V	1678pF @ 15V	1.81W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1563EDH-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 1.13A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 570mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	패키지: 6-TSSOP, SC-88, SOT-363	재고653,172	Logic Level Gate	20V	1.13A, 880mA	280 mOhm @ 1.13A, 4.5V	1V @ 100µA	1nC @ 4.5V	-	570mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
GMM3X100-01X1-SMDSAM	IXYS	MOSFET 6N-CH 100V 90A 24-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SMD, Gull Wing Supplier Device Package: 24-SMD	패키지: 24-SMD, Gull Wing	재고6,960	Standard	100V	90A	-	4.5V @ 1mA	90nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	24-SMD, Gull Wing	24-SMD
NVMFD5853NWFT1G	ON Semiconductor	MOSFET 2N-CH 40V 12A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V Power - Max: 3.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	패키지: 8-PowerTDFN	재고6,608	Logic Level Gate	40V	12A	10 mOhm @ 15A, 10V	4V @ 250µA	24nC @ 10V	1225pF @ 25V	3.1W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
AON5810	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 7.7A 6DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.7A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: 6-DFN-EP (2x5)	패키지: 6-SMD, Flat Lead Exposed Pad	재고91,800	Logic Level Gate	20V	7.7A	18 mOhm @ 7.7A, 4.5V	1V @ 250µA	13.1nC @ 4.5V	1360pF @ 10V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, Flat Lead Exposed Pad	6-DFN-EP (2x5)
SIA777EDJ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V/12V SC70-6L FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V, 12V Current - Continuous Drain (Id) @ 25°C: 1.5A, 4.5A Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 5W, 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고7,648	Logic Level Gate	20V, 12V	1.5A, 4.5A	225 mOhm @ 1.6A, 4.5V	1V @ 250µA	2.2nC @ 5V	-	5W, 7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
AON6946	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 14A/18A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A, 18A Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V Power - Max: 3.5W, 3.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	패키지: 8-PowerVDFN	재고3,584	Logic Level Gate	30V	14A, 18A	11.6 mOhm @ 13A, 10V	2.2V @ 250µA	15nC @ 10V	485pF @ 15V	3.5W, 3.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
STS5DP3LLH6	STMicroelectronics	MOSFET ARRAY 2P-CH 30V 8SO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V Power - Max: 2.7W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,640	Logic Level Gate, 4.5V Drive	30V	5A (Ta)	56 mOhm @ 2.5A, 10V	2.5V @ 250µA	6nC @ 4.5V	639pF @ 25V	2.7W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NX1029X,115	Nexperia USA Inc.	MOSFET N/P-CH 60V/50V SOT666 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25°C: 330mA, 170mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고225,528	Logic Level Gate	60V, 50V	330mA, 170mA	7.5 Ohm @ 100mA, 10V	2.1V @ 250µA	0.35nC @ 5V	36pF @ 25V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
FDMS3604AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/23A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 23A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고42,996	Logic Level Gate	30V	13A, 23A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1695pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDMS7600AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/22A POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 22A Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	패키지: 8-PowerWDFN	재고366,120	Logic Level Gate	30V	12A, 22A	7.5 mOhm @ 12A, 10V	3V @ 250µA	28nC @ 10V	1750pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
SQJ963EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2P-CH 60V SO8 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TA) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고7,520	Standard	60V	8A (Tc)	85 mOhm @ 3.5A, 10V	2.5V @ 250µA	40nC @ 10V	1140pF @ 30V	27W (Tc)	-55°C ~ 175°C (TA)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
STL40DN3LLH5	STMicroelectronics	MOSFET 2N-CH 30V 40A POWERFLAT56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Power - Max: 60W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	패키지: 8-PowerVDFN	재고6,848	Standard	30V	40A	18 mOhm @ 5.5A, 10V	1.5V @ 250µA	4.5nC @ 4.5V	475pF @ 25V	60W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
DMN2010UDZ-7	Diodes Incorporated	MOSFET 2N-CH 20V 11A U-DFN2535-6 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 7 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2665pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2535-6	패키지: 6-UDFN Exposed Pad	재고4,320	Standard	24V	11A	7 mOhm @ 5.5A, 4.5V	1.5V @ 250µA	33.2nC @ 4.5V	2665pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2535-6
DMC1015UPD-13	Diodes Incorporated	MOSFET 8V 24V POWERDI5060-8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	패키지: 8-PowerTDFN	재고20,202	Standard	12V	9.5A, 6.9A	17 mOhm @ 11.8A, 4.5V	1.5V @ 250µA	15.6nC @ 4.5V	1495pF @ 6V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
NTLUD3A260PZTAG	ON Semiconductor	MOSFET 2P-CH 20V 1.3A UDFN6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 200 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-UDFN (1.6x1.6)	패키지: 6-UFDFN Exposed Pad	재고1,863,720	Logic Level Gate	20V	1.3A	200 mOhm @ 2A, 4.5V	1V @ 250µA	4.2nC @ 4.5V	300pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-UDFN (1.6x1.6)
EFC4630R-TR	onsemi	MOSFET 2N-CH 24V 6A EFCP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Supplier Device Package: EFCP1313-4CC-037	패키지: -	Request a Quote	Logic Level Gate, 2.5V Drive	24V	6A (Ta)	45mOhm @ 3A, 4.5V	1.3V @ 1mA	7nC @ 4.5V	-	1.6W	150°C (TJ)	Surface Mount	4-XFBGA	EFCP1313-4CC-037
UPA2451BTL-E1-A	Renesas Electronics Corporation	MOSFET 2N-CH 30V 8.2A 6HWSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Power - Max: 700mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-VFDFN Exposed Pad Supplier Device Package: 6-HWSON	패키지: -	Request a Quote	Logic Level Gate	30V	8.2A	20mOhm @ 4A, 4.5V	1.5V @ 1mA	9.2nC @ 4V	540pF @ 10V	700mW	-	Surface Mount	6-VFDFN Exposed Pad	6-HWSON
ECH8617-TL-E	onsemi	PCH+PCH 4V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CAB760M12HM3R	Wolfspeed, Inc.	SIC 2N-CH 1200V 1.015KA MODUL FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc) Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Vgs(th) (Max) @ Id: 3.6V @ 280mA Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	-	1200V (1.2kV)	1.015kA (Tc)	1.73mOhm @ 760A, 15V	3.6V @ 280mA	2724nC @ 15V	79400pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
DMN3401LVQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.8A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 490mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고113,010	-	30V	800mA (Ta)	400mOhm @ 590mA, 10V	1.6V @ 100µA	1.2nC @ 10V	50pF @ 15V	490mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN3401LDWQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	30V	800mA (Ta)	400mOhm @ 590mA, 10V	1.6V @ 250µA	1.2nC @ 10V	50pF @ 15V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DF11MR12W1M1PB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V 50A AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 5.55V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B-2	패키지: -	Request a Quote	-	1200V (1.2kV)	50A (Tj)	22.5mOhm @ 50A, 15V	5.55V @ 20mA	124nC @ 15V	3680pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B-2
DI9945T	Diodes Incorporated	MOSFET 2N-CH 60V 3.5A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	-	60V	3.5A	100mOhm @ 3.5A, 10V	-	30nC @ 10V	435pF @ 25V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AO8801A_001	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 4.5A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	Request a Quote	-	20V	4.5A (Ta)	42mOhm @ 4.5A, 4.5V	900mV @ 250µA	11nC @ 4.5V	905pF @ 10V	1.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDI9406	Fairchild Semiconductor	MOSFET N-CH 40V 110A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IRF9953

Infineon Technologies

MOSFET 2P-CH 30V 2.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고231,708

Logic Level Gate

30V

2.3A

250 mOhm @ 1A, 10V

1V @ 250µA

12nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

RJM0603JSC-00#12

Renesas Electronics America

MOSFET 3N/3P-CH 60V 20A HSOP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
Power - Max: 54W
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Supplier Device Package: 20-HSOP

패키지: 20-SOIC (0.433", 11.00mm Width) Exposed Pad

재고6,400

Logic Level Gate, 4.5V Drive

60V

20A

20 mOhm @ 10A, 10V

2.5V @ 1mA

43nC @ 10V

2600pF @ 10V

54W

175°C

Surface Mount

20-SOIC (0.433", 11.00mm Width) Exposed Pad

20-HSOP

ZXMP3F37DN8TA

Diodes Incorporated

MOSFET 2P-CH 30V 5.7A 8SO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1678pF @ 15V
Power - Max: 1.81W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고466,992

Logic Level Gate

30V

5.7A

25 mOhm @ 7.1A, 10V

3V @ 250µA

31.6nC @ 10V

1678pF @ 15V

1.81W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1563EDH-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 1.13A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

패키지: 6-TSSOP, SC-88, SOT-363

재고653,172

Logic Level Gate

20V

1.13A, 880mA

280 mOhm @ 1.13A, 4.5V

1V @ 100µA

1nC @ 4.5V

-

570mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

GMM3X100-01X1-SMDSAM

IXYS

MOSFET 6N-CH 100V 90A 24-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD, Gull Wing
Supplier Device Package: 24-SMD

패키지: 24-SMD, Gull Wing

재고6,960

Standard

100V

90A

-

4.5V @ 1mA

90nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

24-SMD, Gull Wing

24-SMD

NVMFD5853NWFT1G

ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

패키지: 8-PowerTDFN

재고6,608

Logic Level Gate

40V

12A

10 mOhm @ 15A, 10V

4V @ 250µA

24nC @ 10V

1225pF @ 25V

3.1W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

AON5810

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7.7A 6DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: 6-DFN-EP (2x5)

패키지: 6-SMD, Flat Lead Exposed Pad

재고91,800

Logic Level Gate

20V

7.7A

18 mOhm @ 7.7A, 4.5V

1V @ 250µA

13.1nC @ 4.5V

1360pF @ 10V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, Flat Lead Exposed Pad

6-DFN-EP (2x5)

SIA777EDJ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V/12V SC70-6L

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 4.5A
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 5W, 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고7,648

Logic Level Gate

20V, 12V

1.5A, 4.5A

225 mOhm @ 1.6A, 4.5V

1V @ 250µA

2.2nC @ 5V

-

5W, 7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

AON6946

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 14A/18A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A, 18A
Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Power - Max: 3.5W, 3.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

패키지: 8-PowerVDFN

재고3,584

Logic Level Gate

30V

14A, 18A

11.6 mOhm @ 13A, 10V

2.2V @ 250µA

15nC @ 10V

485pF @ 15V

3.5W, 3.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

STS5DP3LLH6

STMicroelectronics

MOSFET ARRAY 2P-CH 30V 8SO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V
Power - Max: 2.7W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,640

Logic Level Gate, 4.5V Drive

30V

5A (Ta)

56 mOhm @ 2.5A, 10V

2.5V @ 250µA

6nC @ 4.5V

639pF @ 25V

2.7W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NX1029X,115

Nexperia USA Inc.

MOSFET N/P-CH 60V/50V SOT666

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 330mA, 170mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

패키지: SOT-563, SOT-666

재고225,528

Logic Level Gate

60V, 50V

330mA, 170mA

7.5 Ohm @ 100mA, 10V

2.1V @ 250µA

0.35nC @ 5V

36pF @ 25V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

FDMS3604AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/23A 8-PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고42,996

Logic Level Gate

30V

13A, 23A

8 mOhm @ 13A, 10V

2.7V @ 250µA

29nC @ 10V

1695pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDMS7600AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/22A POWER56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 22A
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

패키지: 8-PowerWDFN

재고366,120

Logic Level Gate

30V

12A, 22A

7.5 mOhm @ 12A, 10V

3V @ 250µA

28nC @ 10V

1750pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

SQJ963EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2P-CH 60V SO8

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고7,520

Standard

60V

8A (Tc)

85 mOhm @ 3.5A, 10V

2.5V @ 250µA

40nC @ 10V

1140pF @ 30V

27W (Tc)

-55°C ~ 175°C (TA)

Surface Mount

PowerPAK? SO-8 Dual

STL40DN3LLH5

STMicroelectronics

MOSFET 2N-CH 30V 40A POWERFLAT56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Power - Max: 60W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

패키지: 8-PowerVDFN

재고6,848

Standard

30V

40A

18 mOhm @ 5.5A, 10V

1.5V @ 250µA

4.5nC @ 4.5V

475pF @ 25V

60W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

DMN2010UDZ-7

Diodes Incorporated

MOSFET 2N-CH 20V 11A U-DFN2535-6

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 7 mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2665pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2535-6

패키지: 6-UDFN Exposed Pad

재고4,320

Standard

24V

11A

7 mOhm @ 5.5A, 4.5V

1.5V @ 250µA

33.2nC @ 4.5V

2665pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2535-6

DMC1015UPD-13

Diodes Incorporated

MOSFET 8V 24V POWERDI5060-8

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

패키지: 8-PowerTDFN

재고20,202

Standard

12V

9.5A, 6.9A

17 mOhm @ 11.8A, 4.5V

1.5V @ 250µA

15.6nC @ 4.5V

1495pF @ 6V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

NTLUD3A260PZTAG

ON Semiconductor

MOSFET 2P-CH 20V 1.3A UDFN6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 200 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-UDFN (1.6x1.6)

패키지: 6-UFDFN Exposed Pad

재고1,863,720

Logic Level Gate

20V

1.3A

200 mOhm @ 2A, 4.5V

1V @ 250µA

4.2nC @ 4.5V

300pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

6-UDFN (1.6x1.6)

EFC4630R-TR

onsemi

MOSFET 2N-CH 24V 6A EFCP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Supplier Device Package: EFCP1313-4CC-037

패키지: -

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Logic Level Gate, 2.5V Drive

24V

6A (Ta)

45mOhm @ 3A, 4.5V

1.3V @ 1mA

7nC @ 4.5V

-

1.6W

150°C (TJ)

Surface Mount

4-XFBGA

EFCP1313-4CC-037

UPA2451BTL-E1-A

Renesas Electronics Corporation

MOSFET 2N-CH 30V 8.2A 6HWSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Power - Max: 700mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-VFDFN Exposed Pad
Supplier Device Package: 6-HWSON

패키지: -

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Logic Level Gate

30V

8.2A

20mOhm @ 4A, 4.5V

1.5V @ 1mA

9.2nC @ 4V

540pF @ 10V

700mW

-

Surface Mount

6-VFDFN Exposed Pad

6-HWSON

ECH8617-TL-E

onsemi

PCH+PCH 4V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

CAB760M12HM3R

Wolfspeed, Inc.

SIC 2N-CH 1200V 1.015KA MODUL

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

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-

1200V (1.2kV)

1.015kA (Tc)

1.73mOhm @ 760A, 15V

3.6V @ 280mA

2724nC @ 15V

79400pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

DMN3401LVQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 490mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고113,010

-

30V

800mA (Ta)

400mOhm @ 590mA, 10V

1.6V @ 100µA

1.2nC @ 10V

50pF @ 15V

490mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN3401LDWQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

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-

30V

800mA (Ta)

400mOhm @ 590mA, 10V

1.6V @ 250µA

1.2nC @ 10V

50pF @ 15V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DF11MR12W1M1PB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V 50A AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B-2

패키지: -

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-

1200V (1.2kV)

50A (Tj)

22.5mOhm @ 50A, 15V

5.55V @ 20mA

124nC @ 15V

3680pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B-2

DI9945T

Diodes Incorporated

MOSFET 2N-CH 60V 3.5A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

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-

60V

3.5A

100mOhm @ 3.5A, 10V

-

30nC @ 10V

435pF @ 25V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AO8801A_001

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 4.5A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

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-

20V

4.5A (Ta)

42mOhm @ 4.5A, 4.5V

900mV @ 250µA

11nC @ 4.5V

905pF @ 10V

1.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

FDI9406

Fairchild Semiconductor

MOSFET N-CH 40V 110A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-