페이지 162 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 어레이

기록 5,684
페이지  162/203
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제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IPG20N06S415ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
패키지: 8-PowerVDFN
재고4,000
Standard
60V
20A
15.5 mOhm @ 17A, 10V
4V @ 20µA
29nC @ 10V
2260pF @ 25V
50W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
AOD607_001
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V TO252-4

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: TO-252-4L
패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD
재고3,616
Standard
30V
12A (Tc)
-
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-5, DPak (4 Leads + Tab), TO-252AD
TO-252-4L
UPA2373T1P-E4-A
Renesas Electronics America

MOSFET 2N-CH 24V

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA
  • Supplier Device Package: 4-EFLIP-LGA (1.62x1.62)
패키지: 4-XFBGA
재고6,368
Logic Level Gate, 2.5V Drive
-
-
-
-
22nC @ 4V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
4-XFBGA
4-EFLIP-LGA (1.62x1.62)
hot AON6970
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 24A/42A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A, 42A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V
  • Power - Max: 5W, 4.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-DFN-EP (5x6)
패키지: 8-PowerWDFN
재고33,540
Logic Level Gate
30V
24A, 42A
5.4 mOhm @ 20A, 10V
2.3V @ 250µA
23nC @ 10V
1171pF @ 15V
5W, 4.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-DFN-EP (5x6)
hot SI6967DQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 8V 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고216,000
Logic Level Gate
8V
-
30 mOhm @ 5A, 4.5V
450mV @ 250µA (Min)
40nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
FDS4885C
Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 7.5A/6A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A, 6A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 20V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,544
Standard
40V
7.5A, 6A
22 mOhm @ 7.5A, 10V
5V @ 250µA
21nC @ 10V
900pF @ 20V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NTHD5904T1
ON Semiconductor

MOSFET 2N-CH 20V 3.1A CHIPFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
패키지: 8-SMD, Flat Lead
재고4,080
Logic Level Gate
20V
3.1A
75 mOhm @ 3.1A, 4.5V
600mV @ 250µA
6nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
hot IRF9956TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 3.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고568,848
Logic Level Gate
30V
3.5A
100 mOhm @ 2.2A, 10V
1V @ 250µA
14nC @ 10V
190pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMN3033LSDQ-13
Diodes Incorporated

MOSFET 2N-CH 30V 6.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,584
Standard
30V
6.9A
20 mOhm @ 6.9A, 10V
2.1V @ 250µA
13nC @ 10V
725pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AO6602L
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6-TSOP

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
패키지: SC-74, SOT-457
재고954,576
Logic Level Gate
30V
-
75 mOhm @ 3.1A, 10V
3V @ 250µA
8.5nC @ 10V
240pF @ 15V
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
DMTH6010LPDQ-13
Diodes Incorporated

MOSFET 2NCH 60V 13.1A POWERDI

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V
  • Power - Max: 2.8W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
패키지: 8-PowerTDFN
재고5,232
Standard
60V
13.1A (Ta), 47.6A (Tc)
11 mOhm @ 20A, 10V
3V @ 250µA
40.2nC @ 10V
2615pF @ 30V
2.8W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
ALD310700ASCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고6,384
Standard
8V
-
-
20mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
IPG20N06S2L35ATMA1
Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8-4

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 27µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
  • Power - Max: 65W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
패키지: 8-PowerVDFN
재고5,776
Logic Level Gate
55V
20A
35 mOhm @ 15A, 10V
2V @ 27µA
23nC @ 10V
790pF @ 25V
65W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
hot SH8K5TB1
Rohm Semiconductor

MOSFET 2N-CH 30V 3.5A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고13,368
Logic Level Gate
30V
3.5A
83 mOhm @ 3.5A, 10V
2.5V @ 1mA
3.5nC @ 5V
140pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FDMS3660S-F121
onsemi

MOSFET 2N-CH 30V 13A/30A POWER56

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A, 30A
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: Power56
패키지: -
Request a Quote
Logic Level Gate
30V
13A, 30A
8mOhm @ 13A, 10V
2.7V @ 250µA
29nC @ 10V
1765pF @ 15V
1W
-
Surface Mount
8-PowerTDFN
Power56
DMN2710UDW-7
Diodes Incorporated

MOSFET 2N-CH 20V 0.8A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
  • Power - Max: 360mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
재고12,351
-
20V
800mA (Ta)
450mOhm @ 600mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V
42pF @ 16V
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
UPA2324T1P-E1-A
Renesas Electronics Corporation

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
NVMFD5877NLWFT1G-UM
onsemi

MOSFET 2N-CH 60V 6A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Power - Max: 3.2W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
패키지: -
Request a Quote
Logic Level Gate
60V
6A (Ta)
39mOhm @ 7.5A, 10V
3V @ 250µA
20nC @ 10V
540pF @ 25V
3.2W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
MSCSM120AM31CTBL1NG
Microchip Technology

SIC 2N-CH 1200V 79A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 310W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
-
1200V (1.2kV)
79A
31mOhm @ 40A, 20V
2.8V @ 1mA
232nC @ 20V
3020pF @ 1000V
310W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70TAM19T3AG
Microchip Technology

SIC 6N-CH 700V 124A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
  • Power - Max: 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
재고3
-
700V
124A (Tc)
19mOhm @ 40A, 20V
2.4V @ 4mA
215nC @ 20V
4500pF @ 700V
365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
SH8K3TB1
Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고4,689
-
30V
7A (Ta)
24mOhm @ 7A, 10V
2.5V @ 1mA
11.8nC @ 5V
600pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SSM6N62TU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
패키지: -
재고26,832
Logic Level Gate, 1.2V Drive
20V
800mA (Ta)
85mOhm @ 800mA, 4.5V
1V @ 1mA
2nC @ 4.5V
177pF @ 10V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
NXH040F120MNF1PG
onsemi

SIC 4N-CH 1200V 30A 22PIM

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
  • Power - Max: 74W (Tj)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 22-PIM (33.8x42.5)
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1200V (1.2kV)
30A (Tc)
56mOhm @ 25A, 20V
4.3V @ 10mA
122.1nC @ 20V
1505pF @ 800V
74W (Tj)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
22-PIM (33.8x42.5)
DMN5L06VK-13
Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: -
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-
50V
280mA (Ta)
2Ohm @ 50mA, 5V
1.2V @ 250µA
-
50pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMC6022SSD-13
Diodes Incorporated

MOSFET N/P-CH 60V 6A/5A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, 30.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 30V, 1525pF @ 30V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: -
재고9,249
-
60V
6A (Ta), 5A (Ta)
29mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
3V @ 250µA
32nC @ 10V, 30.6nC @ 10V
2110pF @ 30V, 1525pF @ 30V
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC4028SSDQ-13
Diodes Incorporated

MOSFET N/P-CH 40V 5.4A/4A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 50mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V, 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V, 674pF @ 20V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
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40V
5.4A (Ta), 4A (Ta)
28mOhm @ 6A, 10V, 50mOhm @ 6A, 10V
3V @ 250µA
12.9nC @ 10V, 14nC @ 10V
604pF @ 20V, 674pF @ 20V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
2N7002PSZ
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 280mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
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Logic Level Gate
60V
320mA (Ta)
1.6Ohm @ 500mA, 10V
2.4V @ 250µA
0.8nC @ 4.5V
50pF @ 10V
280mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
SSM6N67NU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN (2x2)
패키지: -
재고31,257
Logic Level Gate, 1.8V Drive
30V
4A (Ta)
39.1mOhm @ 2A, 4.5V
1V @ 1mA
3.2nC @ 4.5V
310pF @ 15V
2W (Ta)
150°C
Surface Mount
6-WDFN Exposed Pad
6-µDFN (2x2)