페이지 167 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF9395MTR1PBF	Infineon Technologies	MOSFET 2P-CH 30V 14A DIRECTFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V Power - Max: 2.1W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET? Isometric MC Supplier Device Package: DIRECTFET? MC	패키지: DirectFET? Isometric MC	재고6,960	Logic Level Gate	30V	14A	7 mOhm @ 14A, 10V	2.4V @ 50µA	64nC @ 10V	3241pF @ 15V	2.1W	-40°C ~ 150°C (TJ)	Surface Mount	DirectFET? Isometric MC	DIRECTFET? MC
IRF7101PBF	Infineon Technologies	MOSFET 2N-CH 20V 3.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,032	Logic Level Gate	20V	3.5A	100 mOhm @ 1.8A, 10V	3V @ 250µA	15nC @ 10V	320pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7901D1TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 6.2A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고131,220	Logic Level Gate	30V	6.2A	38 mOhm @ 5A, 4.5V	1V @ 250µA	10.5nC @ 5V	780pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
EFC6617R-TF	ON Semiconductor	MOSFET 2N-CH EFCP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,312	-	-	-	-	-	-	-	-	-	-	-	-
AON3810	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 8.5A 8-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (2.9x2.3)	패키지: 8-SMD, Flat Lead	재고5,424	Logic Level Gate	20V	-	24 mOhm @ 7A, 10V	1V @ 250µA	5.2nC @ 4.5V	280pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (2.9x2.3)
NTZD5110NT5G	ON Semiconductor	MOSFET 2N-CH 60V 0.294A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 294mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고51,120	Logic Level Gate	60V	294mA	1.6 Ohm @ 500mA, 10V	2.5V @ 250µA	0.7nC @ 4.5V	24.5pF @ 20V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
MMDF2P02ER2G	ON Semiconductor	MOSFET 2P-CH 25V 2.5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 250 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고413,352	Logic Level Gate	25V	2.5A	250 mOhm @ 2A, 10V	3V @ 250µA	15nC @ 10V	475pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
APTM50AM38SCTG	Microsemi Corporation	MOSFET 2N-CH 500V 90A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고4,576	Silicon Carbide (SiC)	500V	90A	45 mOhm @ 45A, 10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
SMA5112	Sanken	MOSFET 6N-CH 250V 7A 12-SIP FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V Power - Max: 4W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	패키지: 12-SIP, Exposed Tab	재고3,744	Standard	250V	7A	500 mOhm @ 3.5A, 10V	4V @ 1mA	-	450pF @ 10V	4W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
FDG1024NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 1.2A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A Rds On (Max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고758,196	Logic Level Gate	20V	1.2A	175 mOhm @ 1.2A, 4.5V	1V @ 250µA	2.6nC @ 4.5V	150pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
NTHD4102PT1G	ON Semiconductor	MOSFET 2P-CH 20V 2.9A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	패키지: 8-SMD, Flat Lead	재고1,423,812	Logic Level Gate	20V	2.9A	80 mOhm @ 2.9A, 4.5V	1.5V @ 250µA	8.6nC @ 4.5V	750pF @ 16V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
AON6994	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 19A/26A FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-DFN-EP (5x6)	패키지: 8-PowerWDFN	재고6,096	Logic Level Gate	30V	19A, 26A	5.2 mOhm @ 20A, 10V	2.2V @ 250µA	13nC @ 10V	820pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-DFN-EP (5x6)
STS5DPF20L	STMicroelectronics	MOSFET 2P-CH 20V 5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 16V Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고21,804	Logic Level Gate	20V	5A	55 mOhm @ 2.5A, 10V	2.5V @ 250µA	16nC @ 5V	1350pF @ 16V	1.6W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7501DN-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 5.4A 1212-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	패키지: -	Request a Quote	Logic Level Gate	30V	5.4A, 4.5A	35mOhm @ 7.7A, 10V	3V @ 250µA	14nC @ 10V	-	1.6W	-	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
SP8K52HZGTB	Rohm Semiconductor	MOSFET 2N-CH 100V 3A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고7,062	-	100V	3A (Ta)	170mOhm @ 3A, 10V	2.5V @ 1mA	8.5nC @ 5V	610pF @ 25V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMP2040USD-13	Diodes Incorporated	MOSFET 2P-CH 20V 6.5A/12A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V Power - Max: 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	재고4,950	-	20V	6.5A (Ta), 12A (Tc)	33mOhm @ 8.9A, 4.5V	1.5V @ 250µA	19nC @ 8V	834pF @ 10V	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
VEC2315-TL-H	onsemi	MOSFET 2P-CH 60V 2.5A SOT28 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 137mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	패키지: -	Request a Quote	Logic Level Gate	60V	2.5A	137mOhm @ 1.5A, 10V	-	11nC @ 10V	420pF @ 20V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8
NVMFD5C446NT1G	onsemi	MOSFET 2N-CH 40V 24A/127A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V Power - Max: 3.2W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	패키지: -	재고4,500	-	40V	24A (Ta), 127A (Tc)	2.9mOhm @ 30A, 10V	3.5V @ 250µA	38nC @ 10V	2450pF @ 25V	3.2W (Ta), 89W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
MSCSM120HM31TBL2NG	Microchip Technology	SIC 4N-CH 1200V 79A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 310W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	79A	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	310W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
PJX8805_R1_00001	Panjit International Inc.	MOSFET 2P-CH 30V 0.5A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	-	30V	500mA (Ta)	390mOhm @ 500mA, 4.5V	1.3V @ 250µA	1.6nC @ 4.5V	137pF @ 15V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
IRF7342QTRPBF	Infineon Technologies	MOSFET 2P-CH 55V 3.4A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	Logic Level Gate	55V	3.4A	105mOhm @ 3.4A, 10V	1V @ 250µA	38nC @ 10V	690pF @ 25V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7844DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 6.4A PPAK SO-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	Request a Quote	Logic Level Gate	30V	6.4A	22mOhm @ 10A, 10V	2.4V @ 250µA	20nC @ 10V	-	1.4W	-	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
FW282-V-TL-E	onsemi	NCH+NCH 4V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IRFHM792TR2PBF	Infineon Technologies	MOSFET 2N-CH 100V 2.3A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V Power - Max: 2.3W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN-Dual (3.3x3.3)	패키지: -	Request a Quote	-	100V	2.3A	195mOhm @ 2.9A, 10V	4V @ 10µA	6.3nC @ 10V	251pF @ 25V	2.3W	-	Surface Mount	8-PowerVDFN	8-PQFN-Dual (3.3x3.3)
DMTH4008LPDWQ-13	Diodes Incorporated	MOSFET 2N-CH 40V 10A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V Power - Max: 2.67W (Ta), 39.4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	패키지: -	재고27,990	-	40V	10A (Ta), 46.2A (Tc)	12.3mOhm @ 20A, 10V	2.3V @ 250µA	12.3nC @ 10V	881pF @ 20V	2.67W (Ta), 39.4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
SH8KB6TB1	Rohm Semiconductor	MOSFET 2N-CH 40V 8.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 19.4mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고43,392	-	40V	8.5A (Ta)	19.4mOhm @ 8.5A, 10V	2.5V @ 1mA	10.6nC @ 10V	530pF @ 20V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
BSC112N06LDATMA1	Infineon Technologies	MOSFET 2N-CH 60V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 28µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V Power - Max: 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: -	재고36,963	Logic Level Gate	60V	20A (Tc)	11.2mOhm @ 17A, 10V	2.2V @ 28µA	55nC @ 10V	4020pF @ 30V	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
MSCSM70XM45CTYZBNMG	Microchip Technology	PM-MOSFET-SIC-SBD-6HPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 52A (Tc), 110A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 99nC @ 20V, 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 700V, 4500pF @ 700V Power - Max: 141W (Tc), 292W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	700V	52A (Tc), 110A (Tc)	44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V	2.7V @ 2mA, 2.4V @ 4mA	99nC @ 20V, 215nC @ 20V	2010pF @ 700V, 4500pF @ 700V	141W (Tc), 292W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-

IRF9395MTR1PBF

Infineon Technologies

MOSFET 2P-CH 30V 14A DIRECTFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V
Power - Max: 2.1W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET? Isometric MC
Supplier Device Package: DIRECTFET? MC

패키지: DirectFET? Isometric MC

재고6,960

Logic Level Gate

30V

14A

7 mOhm @ 14A, 10V

2.4V @ 50µA

64nC @ 10V

3241pF @ 15V

2.1W

-40°C ~ 150°C (TJ)

Surface Mount

DirectFET? Isometric MC

DIRECTFET? MC

IRF7101PBF

Infineon Technologies

MOSFET 2N-CH 20V 3.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,032

Logic Level Gate

20V

3.5A

100 mOhm @ 1.8A, 10V

3V @ 250µA

15nC @ 10V

320pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7901D1TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고131,220

Logic Level Gate

30V

6.2A

38 mOhm @ 5A, 4.5V

1V @ 250µA

10.5nC @ 5V

780pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

EFC6617R-TF

ON Semiconductor

MOSFET 2N-CH EFCP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,312

-

AON3810

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 8.5A 8-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (2.9x2.3)

패키지: 8-SMD, Flat Lead

재고5,424

Logic Level Gate

20V

-

24 mOhm @ 7A, 10V

1V @ 250µA

5.2nC @ 4.5V

280pF @ 10V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (2.9x2.3)

NTZD5110NT5G

ON Semiconductor

MOSFET 2N-CH 60V 0.294A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 294mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고51,120

Logic Level Gate

60V

294mA

1.6 Ohm @ 500mA, 10V

2.5V @ 250µA

0.7nC @ 4.5V

24.5pF @ 20V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

MMDF2P02ER2G

ON Semiconductor

MOSFET 2P-CH 25V 2.5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고413,352

Logic Level Gate

25V

2.5A

250 mOhm @ 2A, 10V

3V @ 250µA

15nC @ 10V

475pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

APTM50AM38SCTG

Microsemi Corporation

MOSFET 2N-CH 500V 90A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고4,576

Silicon Carbide (SiC)

500V

90A

45 mOhm @ 45A, 10V

5V @ 5mA

246nC @ 10V

11200pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

SMA5112

Sanken

MOSFET 6N-CH 250V 7A 12-SIP

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Power - Max: 4W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

패키지: 12-SIP, Exposed Tab

재고3,744

Standard

250V

7A

500 mOhm @ 3.5A, 10V

4V @ 1mA

-

450pF @ 10V

4W

150°C (TJ)

Through Hole

12-SIP, Exposed Tab

12-SIP

FDG1024NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 1.2A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Rds On (Max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고758,196

Logic Level Gate

20V

1.2A

175 mOhm @ 1.2A, 4.5V

1V @ 250µA

2.6nC @ 4.5V

150pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

NTHD4102PT1G

ON Semiconductor

MOSFET 2P-CH 20V 2.9A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

패키지: 8-SMD, Flat Lead

재고1,423,812

Logic Level Gate

20V

2.9A

80 mOhm @ 2.9A, 4.5V

1.5V @ 250µA

8.6nC @ 4.5V

750pF @ 16V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

AON6994

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 19A/26A

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 26A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-DFN-EP (5x6)

패키지: 8-PowerWDFN

재고6,096

Logic Level Gate

30V

19A, 26A

5.2 mOhm @ 20A, 10V

2.2V @ 250µA

13nC @ 10V

820pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-DFN-EP (5x6)

STS5DPF20L

STMicroelectronics

MOSFET 2P-CH 20V 5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 16V
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고21,804

Logic Level Gate

20V

5A

55 mOhm @ 2.5A, 10V

2.5V @ 250µA

16nC @ 5V

1350pF @ 16V

1.6W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7501DN-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 5.4A 1212-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

패키지: -

Request a Quote

Logic Level Gate

30V

5.4A, 4.5A

35mOhm @ 7.7A, 10V

3V @ 250µA

14nC @ 10V

-

1.6W

-

Surface Mount

PowerPAK® 1212-8 Dual

SP8K52HZGTB

Rohm Semiconductor

MOSFET 2N-CH 100V 3A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고7,062

-

100V

3A (Ta)

170mOhm @ 3A, 10V

2.5V @ 1mA

8.5nC @ 5V

610pF @ 25V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMP2040USD-13

Diodes Incorporated

MOSFET 2P-CH 20V 6.5A/12A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V
Power - Max: 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

재고4,950

-

20V

6.5A (Ta), 12A (Tc)

33mOhm @ 8.9A, 4.5V

1.5V @ 250µA

19nC @ 8V

834pF @ 10V

1.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

VEC2315-TL-H

onsemi

MOSFET 2P-CH 60V 2.5A SOT28

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 137mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

패키지: -

Request a Quote

Logic Level Gate

60V

2.5A

137mOhm @ 1.5A, 10V

-

11nC @ 10V

420pF @ 20V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8

NVMFD5C446NT1G

onsemi

MOSFET 2N-CH 40V 24A/127A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
Power - Max: 3.2W (Ta), 89W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

패키지: -

재고4,500

-

40V

24A (Ta), 127A (Tc)

2.9mOhm @ 30A, 10V

3.5V @ 250µA

38nC @ 10V

2450pF @ 25V

3.2W (Ta), 89W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

MSCSM120HM31TBL2NG

Microchip Technology

SIC 4N-CH 1200V 79A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 310W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

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1200V (1.2kV)

79A

31mOhm @ 40A, 20V

2.8V @ 3mA

232nC @ 20V

3020pF @ 1000V

310W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

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PJX8805_R1_00001

Panjit International Inc.

MOSFET 2P-CH 30V 0.5A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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30V

500mA (Ta)

390mOhm @ 500mA, 4.5V

1.3V @ 250µA

1.6nC @ 4.5V

137pF @ 15V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

IRF7342QTRPBF

Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

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Logic Level Gate

55V

3.4A

105mOhm @ 3.4A, 10V

1V @ 250µA

38nC @ 10V

690pF @ 25V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7844DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

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Logic Level Gate

30V

6.4A

22mOhm @ 10A, 10V

2.4V @ 250µA

20nC @ 10V

-

1.4W

-

Surface Mount

PowerPAK® SO-8 Dual

FW282-V-TL-E

onsemi

NCH+NCH 4V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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IRFHM792TR2PBF

Infineon Technologies

MOSFET 2N-CH 100V 2.3A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
Power - Max: 2.3W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)

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100V

2.3A

195mOhm @ 2.9A, 10V

4V @ 10µA

6.3nC @ 10V

251pF @ 25V

2.3W

-

Surface Mount

8-PowerVDFN

8-PQFN-Dual (3.3x3.3)

DMTH4008LPDWQ-13

Diodes Incorporated

MOSFET 2N-CH 40V 10A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Power - Max: 2.67W (Ta), 39.4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

패키지: -

재고27,990

-

40V

10A (Ta), 46.2A (Tc)

12.3mOhm @ 20A, 10V

2.3V @ 250µA

12.3nC @ 10V

881pF @ 20V

2.67W (Ta), 39.4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

SH8KB6TB1

Rohm Semiconductor

MOSFET 2N-CH 40V 8.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고43,392

-

40V

8.5A (Ta)

19.4mOhm @ 8.5A, 10V

2.5V @ 1mA

10.6nC @ 10V

530pF @ 20V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

BSC112N06LDATMA1

Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Power - Max: 65W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

패키지: -

재고36,963

Logic Level Gate

60V

20A (Tc)

11.2mOhm @ 17A, 10V

2.2V @ 28µA

55nC @ 10V

4020pF @ 30V

65W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

MSCSM70XM45CTYZBNMG

Microchip Technology

PM-MOSFET-SIC-SBD-6HPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc), 110A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 20V, 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 700V, 4500pF @ 700V
Power - Max: 141W (Tc), 292W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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700V

52A (Tc), 110A (Tc)

44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V

2.7V @ 2mA, 2.4V @ 4mA

99nC @ 20V, 215nC @ 20V

2010pF @ 700V, 4500pF @ 700V

141W (Tc), 292W (Tc)

-55°C ~ 175°C (TJ)

Chassis Mount

Module

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