페이지 169 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AUIRF7313Q	Infineon Technologies	MOSFET 2N-CH 30V 6.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	패키지: 8-SOIC	재고6,384	Logic Level Gate	30V	6.9A	29 mOhm @ 6.9A, 10V	3V @ 250µA	33nC @ 10V	755pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SO
VQ2001P	Vishay Siliconix	MOSFET 4P-CH 30V 0.6A 14DIP FET Type: 4 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 12V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고144,000	Standard	30V	600mA	2 Ohm @ 1A, 12V	4.5V @ 1mA	-	150pF @ 15V	2W	-55°C ~ 150°C (TJ)	-	-	-
SI5903DC-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 2.1A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	패키지: 8-SMD, Flat Lead	재고20,808	Logic Level Gate	20V	2.1A	155 mOhm @ 2.1A, 4.5V	600mV @ 250µA (Min)	6nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
BSL314PEH6327XTSA1	Infineon Technologies	MOSFET 2P-CH 30V 1.5A 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2V @ 6.3µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고3,120	Logic Level Gate, 4.5V Drive	30V	1.5A	140 mOhm @ 1.5A, 10V	2V @ 6.3µA	2.9nC @ 10V	294pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
SI6975DQ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 4.3A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 5mA (Min) Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고9,936	Logic Level Gate	12V	4.3A	27 mOhm @ 5.1A, 4.5V	450mV @ 5mA (Min)	30nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AON2801	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 3A DFN2X2-6L FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-DFN-EP (2x2)	패키지: 6-WDFN Exposed Pad	재고110,628	Logic Level Gate	20V	3A	120 mOhm @ 3A, 4.5V	1V @ 250µA	6.5nC @ 4.5V	700pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-DFN-EP (2x2)
NTZD3152PT1H	ON Semiconductor	MOSFET 2P-CH 20V 0.43A SOT563 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 430mA Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563-6	패키지: SOT-563, SOT-666	재고182,892	Standard	20V	430mA	900 mOhm @ 430mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	175pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563-6
APTM20AM04FG	Microsemi Corporation	MOSFET 2N-CH 200V 372A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 372A Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고7,456	Standard	200V	372A	5 mOhm @ 186A, 10V	5V @ 10mA	560nC @ 10V	28900pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
ALD1102APAL	Advanced Linear Devices Inc.	MOSFET 2P-CH 10.6V 8DIP FET Type: 2 P-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고4,928	Standard	10.6V	-	270 Ohm @ 5V	1.2V @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
CSD88537NDT	Texas Instruments	MOSFET 2N-CH 60V 15A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고14,352	Standard	60V	15A	15 mOhm @ 8A, 10V	3.6V @ 250µA	18nC @ 10V	1400pF @ 30V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
QS8J13TR	Rohm Semiconductor	MOSFET 2P-CH 12V 5.5A TSMT8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 22 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 6V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고6,416	Logic Level Gate	12V	5.5A	22 mOhm @ 5.5A, 4.5V	1V @ 1mA	60nC @ 4.5V	6300pF @ 6V	1.25W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
SI1034CX-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V SC89-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 610mA (Ta) Rds On (Max) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 220mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고1,913,280	Logic Level Gate	20V	610mA (Ta)	396 mOhm @ 500mA, 4.5V	1V @ 250µA	2nC @ 8V	43pF @ 10V	220mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
AON3611	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 5A/6A 8DFN FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 6A Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Power - Max: 2.1W, 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (2.9x2.3)	패키지: 8-SMD, Flat Lead	재고128,352	Logic Level Gate	30V	5A, 6A	50 mOhm @ 5A, 10V	2.5V @ 250µA	10nC @ 10V	170pF @ 15V	2.1W, 2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (2.9x2.3)
SIA931DJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 4.5A SC70-6L FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고144,000	Logic Level Gate	30V	4.5A	65 mOhm @ 3A, 10V	2.2V @ 250µA	13nC @ 10V	445pF @ 15V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
TPS1120DR	Texas Instruments	MOSFET 2P-CH 15V 1.17A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.17A Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 840mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고306,444	Logic Level Gate	15V	1.17A	180 mOhm @ 1.5A, 10V	1.5V @ 250µA	5.45nC @ 10V	-	840mW	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDS8958A_F085	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 7A/5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고43,818	Logic Level Gate	30V	7A, 5A	28 mOhm @ 7A, 10V	3V @ 250µA	16nC @ 10V	575pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4840	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 40V 6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고415,344	Logic Level Gate	40V	6A	30 mOhm @ 6A, 10V	3V @ 250µA	10.8nC @ 10V	650pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMTH4014LPDQ-13	Diodes Incorporated	MOSFET 2N-CH 40V 10.6A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V Power - Max: 2.41W (Ta), 42.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	패키지: -	재고7,500	-	40V	10.6A (Ta), 43.6A (Tc)	15mOhm @ 20A, 10V	3V @ 250µA	10.2nC @ 10V	733pF @ 20V	2.41W (Ta), 42.8W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
QS8M51HZGTR	Rohm Semiconductor	100V NCH + PCH SMALL SIGNAL MOSF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta) Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V Power - Max: 1.1W (Ta) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: -	재고8,910	-	100V	2A (Ta), 1.5A (Ta)	325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V	2.5V @ 1mA	4.7nC @ 5V, 17nC @ 5V	290pF @ 25V, 950pF @ 25V	1.1W (Ta)	-55°C ~ 150°C	Surface Mount	8-SMD, Flat Lead	TSMT8
MSCSM170HM087CAG	Microchip Technology	SIC 4N-CH 1700V 238A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V Power - Max: 1.114kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	재고27	-	1700V (1.7kV)	238A (Tc)	11.3mOhm @ 120A, 20V	3.2V @ 10mA	712nC @ 20V	13200pF @ 1000V	1.114kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
OP524-005	WeEn Semiconductors	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SH8K52GZETB	Rohm Semiconductor	MOSFET 2N-CH 100V 3A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고29,685	-	100V	3A (Ta)	170mOhm @ 3A, 10V	2.5V @ 1mA	8.5nC @ 5V	610pF @ 25V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SFT1405-TL-E	onsemi	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
2N7002KDW-TP	Micro Commercial Co	MOSFET 2N-CH 60V 0.34A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고4,233	-	60V	340mA	5Ohm @ 500mA, 10V	2.5V @ 1mA	-	40pF @ 10V	150mW	-55°C ~ 150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMC31D5UDAQ-7B	Diodes Incorporated	MOSFET N/P-CH 30V 0.4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V Power - Max: 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	패키지: -	Request a Quote	-	30V	400mA (Ta), 220mA (Ta)	1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V	1V @ 250µA	0.38nC @ 4.5V, 0.35nC @ 4.5V	22.6pF @ 15V, 21.8pF @ 15V	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6
UPA2381AT1P-E1-A	Renesas Electronics Corporation	MOSFET N-CH DUAL LGA FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IRF810	Harris Corporation	MOSFET N-CH 500V 8A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MCQ03N06-TP	Micro Commercial Co	MOSFET 2N-CH 60V 3A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 30V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	-	60V	3A	105mOhm @ 3A, 10V	1.4V @ 250µA	6nC @ 4.5V	247pF @ 30V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP

AUIRF7313Q

Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

패키지: 8-SOIC

재고6,384

Logic Level Gate

30V

6.9A

29 mOhm @ 6.9A, 10V

3V @ 250µA

33nC @ 10V

755pF @ 25V

2.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC

8-SO

VQ2001P

Vishay Siliconix

MOSFET 4P-CH 30V 0.6A 14DIP

FET Type: 4 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고144,000

Standard

30V

600mA

2 Ohm @ 1A, 12V

4.5V @ 1mA

-

150pF @ 15V

2W

-55°C ~ 150°C (TJ)

-

SI5903DC-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 2.1A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

패키지: 8-SMD, Flat Lead

재고20,808

Logic Level Gate

20V

2.1A

155 mOhm @ 2.1A, 4.5V

600mV @ 250µA (Min)

6nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

BSL314PEH6327XTSA1

Infineon Technologies

MOSFET 2P-CH 30V 1.5A 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고3,120

Logic Level Gate, 4.5V Drive

30V

1.5A

140 mOhm @ 1.5A, 10V

2V @ 6.3µA

2.9nC @ 10V

294pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

SI6975DQ-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 4.3A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 5mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고9,936

Logic Level Gate

12V

4.3A

27 mOhm @ 5.1A, 4.5V

450mV @ 5mA (Min)

30nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AON2801

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 3A DFN2X2-6L

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-DFN-EP (2x2)

패키지: 6-WDFN Exposed Pad

재고110,628

Logic Level Gate

20V

3A

120 mOhm @ 3A, 4.5V

1V @ 250µA

6.5nC @ 4.5V

700pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-DFN-EP (2x2)

NTZD3152PT1H

ON Semiconductor

MOSFET 2P-CH 20V 0.43A SOT563

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563-6

패키지: SOT-563, SOT-666

재고182,892

Standard

20V

430mA

900 mOhm @ 430mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

175pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563-6

APTM20AM04FG

Microsemi Corporation

MOSFET 2N-CH 200V 372A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고7,456

Standard

200V

372A

5 mOhm @ 186A, 10V

5V @ 10mA

560nC @ 10V

28900pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

ALD1102APAL

Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8DIP

FET Type: 2 P-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고4,928

Standard

10.6V

-

270 Ohm @ 5V

1.2V @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

CSD88537NDT

Texas Instruments

MOSFET 2N-CH 60V 15A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고14,352

Standard

60V

15A

15 mOhm @ 8A, 10V

3.6V @ 250µA

18nC @ 10V

1400pF @ 30V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

QS8J13TR

Rohm Semiconductor

MOSFET 2P-CH 12V 5.5A TSMT8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 6V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고6,416

Logic Level Gate

12V

5.5A

22 mOhm @ 5.5A, 4.5V

1V @ 1mA

60nC @ 4.5V

6300pF @ 6V

1.25W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

SI1034CX-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V SC89-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Rds On (Max) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Power - Max: 220mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고1,913,280

Logic Level Gate

20V

610mA (Ta)

396 mOhm @ 500mA, 4.5V

1V @ 250µA

2nC @ 8V

43pF @ 10V

220mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

AON3611

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 5A/6A 8DFN

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Power - Max: 2.1W, 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (2.9x2.3)

패키지: 8-SMD, Flat Lead

재고128,352

Logic Level Gate

30V

5A, 6A

50 mOhm @ 5A, 10V

2.5V @ 250µA

10nC @ 10V

170pF @ 15V

2.1W, 2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (2.9x2.3)

SIA931DJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 4.5A SC70-6L

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고144,000

Logic Level Gate

30V

4.5A

65 mOhm @ 3A, 10V

2.2V @ 250µA

13nC @ 10V

445pF @ 15V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

TPS1120DR

Texas Instruments

MOSFET 2P-CH 15V 1.17A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 1.17A
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 840mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고306,444

Logic Level Gate

15V

1.17A

180 mOhm @ 1.5A, 10V

1.5V @ 250µA

5.45nC @ 10V

-

840mW

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FDS8958A_F085

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 7A/5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고43,818

Logic Level Gate

30V

7A, 5A

28 mOhm @ 7A, 10V

3V @ 250µA

16nC @ 10V

575pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO4840

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고415,344

Logic Level Gate

40V

6A

30 mOhm @ 6A, 10V

3V @ 250µA

10.8nC @ 10V

650pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMTH4014LPDQ-13

Diodes Incorporated

MOSFET 2N-CH 40V 10.6A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Power - Max: 2.41W (Ta), 42.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

패키지: -

재고7,500

-

40V

10.6A (Ta), 43.6A (Tc)

15mOhm @ 20A, 10V

3V @ 250µA

10.2nC @ 10V

733pF @ 20V

2.41W (Ta), 42.8W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

QS8M51HZGTR

Rohm Semiconductor

100V NCH + PCH SMALL SIGNAL MOSF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Power - Max: 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: -

재고8,910

-

100V

2A (Ta), 1.5A (Ta)

325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V

2.5V @ 1mA

4.7nC @ 5V, 17nC @ 5V

290pF @ 25V, 950pF @ 25V

1.1W (Ta)

-55°C ~ 150°C

Surface Mount

8-SMD, Flat Lead

TSMT8

MSCSM170HM087CAG

Microchip Technology

SIC 4N-CH 1700V 238A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Power - Max: 1.114kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

재고27

-

1700V (1.7kV)

238A (Tc)

11.3mOhm @ 120A, 20V

3.2V @ 10mA

712nC @ 20V

13200pF @ 1000V

1.114kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

OP524-005

WeEn Semiconductors

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

SH8K52GZETB

Rohm Semiconductor

MOSFET 2N-CH 100V 3A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고29,685

-

100V

3A (Ta)

170mOhm @ 3A, 10V

2.5V @ 1mA

8.5nC @ 5V

610pF @ 25V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SFT1405-TL-E

onsemi

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

2N7002KDW-TP

Micro Commercial Co

MOSFET 2N-CH 60V 0.34A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고4,233

-

60V

340mA

5Ohm @ 500mA, 10V

2.5V @ 1mA

-

40pF @ 10V

150mW

-55°C ~ 150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMC31D5UDAQ-7B

Diodes Incorporated

MOSFET N/P-CH 30V 0.4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V
Power - Max: 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

패키지: -

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-

30V

400mA (Ta), 220mA (Ta)

1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V

1V @ 250µA

0.38nC @ 4.5V, 0.35nC @ 4.5V

22.6pF @ 15V, 21.8pF @ 15V

370mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X2-DFN0806-6

UPA2381AT1P-E1-A

Renesas Electronics Corporation

MOSFET N-CH DUAL LGA

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IRF810

Harris Corporation

MOSFET N-CH 500V 8A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

MCQ03N06-TP

Micro Commercial Co

MOSFET 2N-CH 60V 3A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 30V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

-

60V

3A

105mOhm @ 3A, 10V

1.4V @ 250µA

6nC @ 4.5V

247pF @ 30V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP