페이지 173 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
ECH8662-TL-HX	ON Semiconductor	MOSFET N-CH ECH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,512	-	-	-	-	-	-	-	-	-	-	-	-
AON7804_102	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 9A 8DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (3x3)	패키지: 8-PowerSMD, Flat Leads	재고3,584	Logic Level Gate	30V	9A	21 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (3x3)
SI7842DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6.3A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고55,824	Logic Level Gate	30V	6.3A	22 mOhm @ 7.5A, 10V	2.4V @ 250µA	20nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
NTZD3156CT2G	ON Semiconductor	MOSFET N/P-CH 20V SOT-563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고4,032	Logic Level Gate	20V	540mA, 430mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	72pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SI7960DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 60V 6.2A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고15,120	Logic Level Gate	60V	6.2A	21 mOhm @ 9.7A, 10V	3V @ 250µA	75nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI6943BDQ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 2.3A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고104,520	Logic Level Gate	12V	2.3A	80 mOhm @ 2.5A, 4.5V	800mV @ 250µA	10nC @ 4.5V	-	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NTJD2152PT4	ON Semiconductor	MOSFET 2P-CH 8V 0.775A SOT-363 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 775mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고2,672	Logic Level Gate	8V	775mA	300 mOhm @ 570mA, 4.5V	1V @ 250µA	4nC @ 4.5V	225pF @ 8V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
SLA5041	Sanken	MOSFET 4N-CH 200V 10A 12SIP FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 175 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	패키지: 12-SIP, Exposed Tab	재고6,288	Logic Level Gate	200V	10A	175 mOhm @ 5A, 10V	4V @ 1mA	-	850pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
ALD1101ASAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,648	Standard	10.6V	-	75 Ohm @ 5V	1V @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
APTC60TDUM35PG	Microsemi Corporation	MOSFET 6N-CH 600V 72A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 416W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	패키지: SP6	재고7,056	Standard	600V	72A	35 mOhm @ 72A, 10V	3.9V @ 5.4mA	518nC @ 10V	14000pF @ 25V	416W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
ALD1107SBL	Advanced Linear Devices Inc.	MOSFET 4P-CH 10.6V 14SOIC FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고6,640	Standard	10.6V	-	1800 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
BSO211PNTMA1	Infineon Technologies	MOSFET 2P-CH 20V 4.7A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,992	Logic Level Gate	20V	4.7A	67 mOhm @ 4.7A, 4.5V	1.2V @ 25µA	23.9nC @ 4.5V	920pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	P-DSO-8
DMTH4007SPD-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI506 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14.2A Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V Power - Max: 2.6W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	패키지: 8-PowerTDFN	재고7,152	Standard	40V	14.2A	8.6 mOhm @ 17A, 10V	4V @ 250µA	41.9nC @ 10V	2026pF @ 30V	2.6W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
TT8J11TCR	Rohm Semiconductor	MOSFET 2P-CH 12V 3.5A TSST8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V Power - Max: 650mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	패키지: 8-SMD, Flat Lead	재고86,508	Logic Level Gate, 1.5V Drive	12V	3.5A	43 mOhm @ 3.5A, 4.5V	1V @ 1mA	22nC @ 4.5V	2600pF @ 6V	650mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
SI6954ADQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 3.1A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고9,696	Logic Level Gate	30V	3.1A	53 mOhm @ 3.4A, 10V	1V @ 250µA (Min)	16nC @ 10V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SIA914ADJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.5A SC70-6L FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고42,360	Logic Level Gate	20V	4.5A	43 mOhm @ 3.7A, 4.5V	900mV @ 250µA	12.5nC @ 8V	470pF @ 10V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
SI4946BEY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V Power - Max: 3.7W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고14,088	Logic Level Gate	60V	6.5A	41 mOhm @ 5.3A, 10V	3V @ 250µA	25nC @ 10V	840pF @ 30V	3.7W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4800BL	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 6.9A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Power - Max: 1.9W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	-	30V	6.9A (Ta)	27mOhm @ 6.9A, 10V	1.5V @ 250µA	12nC @ 4.5V	1100pF @ 15V	1.9W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQJ202EP-T2_GE3	Vishay Siliconix	MOSFET 2N-CH 12V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	패키지: -	재고27,000	-	12V	20A (Tc), 60A (Tc)	6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V	2V @ 250µA	22nC @ 10V, 54nC @ 10V	975pF @ 6V, 2525pF @ 6V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
PJT7801_R1_00001	Panjit International Inc.	MOSFET 2P-CH 20V 0.7A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고25,710	-	20V	700mA (Ta)	325mOhm @ 700mA, 4.5V	1V @ 250µA	2.2nC @ 4.5V	165pF @ 10V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
RFIS40N10LE	Harris Corporation	MOSFET N-CH 100V 40A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PJS6830_S1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 2A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: -	Request a Quote	-	20V	2A (Ta)	150mOhm @ 2A, 4.5V	1V @ 250µA	1.8nC @ 4.5V	92pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
NTMFD1D4N02P1E	onsemi	MOSFET 2N-CH 25V 13A/74A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 2V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V, 21.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 13V, 3603pF @ 13V Power - Max: 960mW (Ta), 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (5x6)	패키지: -	재고8,820	-	25V	13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)	3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V	2V @ 250µA, 2V @ 800µA	7.2nC @ 4.5V, 21.5nC @ 4.5V	1180pF @ 13V, 3603pF @ 13V	960mW (Ta), 1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PQFN (5x6)
AOCR36330	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 40A 18RIGIDCSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 18-SMD, No Lead Supplier Device Package: 18-RigidCSP (6.22x2.5)	패키지: -	Request a Quote	-	30V	40A (Ta)	1.4mOhm @ 6A, 10V	2V @ 250µA	128nC @ 10V	-	3.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	18-SMD, No Lead	18-RigidCSP (6.22x2.5)
PJX8803_R1_00001	Panjit International Inc.	MOSFET 2P-CH 20V 0.6A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고10,845	-	20V	600mA (Ta)	340mOhm @ 600mA, 4.5V	1V @ 250µA	2.2nC @ 4.5V	151pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NP29N04QUK-E1-AY	Renesas Electronics Corporation	MOSFET 2N-CH 40V 30A 8HSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 10.1mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Power - Max: 1W (Ta), 44W (Tc) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-HSON (5x5.4)	패키지: -	재고7,500	-	40V	30A (Tc)	10.1mOhm @ 15A, 10V	4V @ 250µA	29nC @ 10V	1500pF @ 25V	1W (Ta), 44W (Tc)	175°C	Surface Mount	8-PowerLDFN	8-HSON (5x5.4)
DI006H03SQ	Diotec Semiconductor	MOSFET SO8 N+P 30V 0.025OHM 150C FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	-	30V	6A (Ta), 4.2A (Ta)	25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V	2V @ 250µA	11.7nC @ 10V, 11.4nC @ 10V	590pF @ 15V, 631pF @ 15V	1.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMP31D1UVTQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	30V	760mA (Ta)	1Ohm @ 400mA, 4.5V	1.1V @ 250µA	1.6nC @ 8V	54pF @ 15V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26

ECH8662-TL-HX

ON Semiconductor

MOSFET N-CH ECH8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,512

-

AON7804_102

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9A 8DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (3x3)

패키지: 8-PowerSMD, Flat Leads

재고3,584

Logic Level Gate

30V

9A

21 mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerSMD, Flat Leads

8-DFN (3x3)

SI7842DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6.3A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고55,824

Logic Level Gate

30V

6.3A

22 mOhm @ 7.5A, 10V

2.4V @ 250µA

20nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

NTZD3156CT2G

ON Semiconductor

MOSFET N/P-CH 20V SOT-563

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고4,032

Logic Level Gate

20V

540mA, 430mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

72pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SI7960DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 60V 6.2A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고15,120

Logic Level Gate

60V

6.2A

21 mOhm @ 9.7A, 10V

3V @ 250µA

75nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI6943BDQ-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 2.3A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고104,520

Logic Level Gate

12V

2.3A

80 mOhm @ 2.5A, 4.5V

800mV @ 250µA

10nC @ 4.5V

-

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

NTJD2152PT4

ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 775mA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고2,672

Logic Level Gate

8V

775mA

300 mOhm @ 570mA, 4.5V

1V @ 250µA

4nC @ 4.5V

225pF @ 8V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

SLA5041

Sanken

MOSFET 4N-CH 200V 10A 12SIP

FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 175 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Power - Max: 5W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

패키지: 12-SIP, Exposed Tab

재고6,288

Logic Level Gate

200V

10A

175 mOhm @ 5A, 10V

4V @ 1mA

-

850pF @ 10V

5W

150°C (TJ)

Through Hole

12-SIP, Exposed Tab

12-SIP

ALD1101ASAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,648

Standard

10.6V

-

75 Ohm @ 5V

1V @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

APTC60TDUM35PG

Microsemi Corporation

MOSFET 6N-CH 600V 72A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Power - Max: 416W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

패키지: SP6

재고7,056

Standard

600V

72A

35 mOhm @ 72A, 10V

3.9V @ 5.4mA

518nC @ 10V

14000pF @ 25V

416W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

ALD1107SBL

Advanced Linear Devices Inc.

MOSFET 4P-CH 10.6V 14SOIC

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고6,640

Standard

10.6V

-

1800 Ohm @ 5V

1V @ 1µA

-

3pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

BSO211PNTMA1

Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: P-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,992

Logic Level Gate

20V

4.7A

67 mOhm @ 4.7A, 4.5V

1.2V @ 25µA

23.9nC @ 4.5V

920pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

P-DSO-8

DMTH4007SPD-13

Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI506

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Power - Max: 2.6W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

패키지: 8-PowerTDFN

재고7,152

Standard

40V

14.2A

8.6 mOhm @ 17A, 10V

4V @ 250µA

41.9nC @ 10V

2026pF @ 30V

2.6W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

TT8J11TCR

Rohm Semiconductor

MOSFET 2P-CH 12V 3.5A TSST8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
Power - Max: 650mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

패키지: 8-SMD, Flat Lead

재고86,508

Logic Level Gate, 1.5V Drive

12V

3.5A

43 mOhm @ 3.5A, 4.5V

1V @ 1mA

22nC @ 4.5V

2600pF @ 6V

650mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

SI6954ADQ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 3.1A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고9,696

Logic Level Gate

30V

3.1A

53 mOhm @ 3.4A, 10V

1V @ 250µA (Min)

16nC @ 10V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SIA914ADJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6L

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고42,360

Logic Level Gate

20V

4.5A

43 mOhm @ 3.7A, 4.5V

900mV @ 250µA

12.5nC @ 8V

470pF @ 10V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

SI4946BEY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 6.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
Power - Max: 3.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고14,088

Logic Level Gate

60V

6.5A

41 mOhm @ 5.3A, 10V

3V @ 250µA

25nC @ 10V

840pF @ 30V

3.7W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO4800BL

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6.9A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power - Max: 1.9W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

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30V

6.9A (Ta)

27mOhm @ 6.9A, 10V

1.5V @ 250µA

12nC @ 4.5V

1100pF @ 15V

1.9W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQJ202EP-T2_GE3

Vishay Siliconix

MOSFET 2N-CH 12V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

패키지: -

재고27,000

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12V

20A (Tc), 60A (Tc)

6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V

2V @ 250µA

22nC @ 10V, 54nC @ 10V

975pF @ 6V, 2525pF @ 6V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

PJT7801_R1_00001

Panjit International Inc.

MOSFET 2P-CH 20V 0.7A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고25,710

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20V

700mA (Ta)

325mOhm @ 700mA, 4.5V

1V @ 250µA

2.2nC @ 4.5V

165pF @ 10V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

RFIS40N10LE

Harris Corporation

MOSFET N-CH 100V 40A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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PJS6830_S1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 2A SOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: -

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20V

2A (Ta)

150mOhm @ 2A, 4.5V

1V @ 250µA

1.8nC @ 4.5V

92pF @ 10V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

NTMFD1D4N02P1E

onsemi

MOSFET 2N-CH 25V 13A/74A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V, 21.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 13V, 3603pF @ 13V
Power - Max: 960mW (Ta), 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PQFN (5x6)

패키지: -

재고8,820

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25V

13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)

3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V

2V @ 250µA, 2V @ 800µA

7.2nC @ 4.5V, 21.5nC @ 4.5V

1180pF @ 13V, 3603pF @ 13V

960mW (Ta), 1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PQFN (5x6)

AOCR36330

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 40A 18RIGIDCSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-SMD, No Lead
Supplier Device Package: 18-RigidCSP (6.22x2.5)

패키지: -

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30V

40A (Ta)

1.4mOhm @ 6A, 10V

2V @ 250µA

128nC @ 10V

-

3.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

18-SMD, No Lead

18-RigidCSP (6.22x2.5)

PJX8803_R1_00001

Panjit International Inc.

MOSFET 2P-CH 20V 0.6A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고10,845

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20V

600mA (Ta)

340mOhm @ 600mA, 4.5V

1V @ 250µA

2.2nC @ 4.5V

151pF @ 10V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NP29N04QUK-E1-AY

Renesas Electronics Corporation

MOSFET 2N-CH 40V 30A 8HSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Power - Max: 1W (Ta), 44W (Tc)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-HSON (5x5.4)

패키지: -

재고7,500

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40V

30A (Tc)

10.1mOhm @ 15A, 10V

4V @ 250µA

29nC @ 10V

1500pF @ 25V

1W (Ta), 44W (Tc)

175°C

Surface Mount

8-PowerLDFN

8-HSON (5x5.4)

DI006H03SQ

Diotec Semiconductor

MOSFET SO8 N+P 30V 0.025OHM 150C

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

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30V

6A (Ta), 4.2A (Ta)

25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V

2V @ 250µA

11.7nC @ 10V, 11.4nC @ 10V

590pF @ 15V, 631pF @ 15V

1.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMP31D1UVTQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

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30V

760mA (Ta)

1Ohm @ 400mA, 4.5V

1.1V @ 250µA

1.6nC @ 8V

54pF @ 15V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26