페이지 172 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FW389-TL-2WX	ON Semiconductor	MOSFET N-CH 100V 8SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,576	-	-	-	-	-	-	-	-	-	-	-	-
ECH8649-TL-H	ON Semiconductor	MOSFET 2N-CH 20V 7.5A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 17 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	패키지: 8-SMD, Flat Lead	재고3,376	Logic Level Gate	20V	7.5A	17 mOhm @ 4A, 4.5V	-	10.8nC @ 4.5V	1060pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
SI6973DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.1A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고35,604	Logic Level Gate	20V	4.1A	30 mOhm @ 4.8A, 4.5V	450mV @ 250µA (Min)	30nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4622DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V Power - Max: 3.3W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고452,268	Standard	30V	8A	16 mOhm @ 9.6A, 10V	2.5V @ 1mA	60nC @ 10V	2458pF @ 15V	3.3W, 3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI3948DV-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 6-TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고335,868	Logic Level Gate	30V	-	105 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	3.2nC @ 5V	-	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
VMM650-01F	IXYS	MOSFET 2N-CH 100V 680A Y3-LI FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 680A Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 500A, 10V Vgs(th) (Max) @ Id: 4V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-Li Supplier Device Package: Y3-Li	패키지: Y3-Li	재고6,304	Standard	100V	680A	2.2 mOhm @ 500A, 10V	4V @ 30mA	1440nC @ 10V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-Li	Y3-Li
TC1550TG-G	Microchip Technology	MOSFET N/P-CH 500V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,472	Standard	500V	-	60 Ohm @ 50mA, 10V	4V @ 1mA	-	55pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AON3816	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 4A 8-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (2.9x2.3)	패키지: 8-SMD, Flat Lead	재고167,988	Logic Level Gate	20V	-	22 mOhm @ 4A, 4.5V	1.1V @ 250µA	13nC @ 4.5V	1100pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (2.9x2.3)
DMN1250UFEL-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V U-QFN1515-1 FET Type: 8 N-Channel, Common Gate, Common Source FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 450 mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V Power - Max: 660mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-UFQFN Exposed Pad Supplier Device Package: U-QFN1515-12	패키지: 12-UFQFN Exposed Pad	재고5,760	Standard	12V	2A	450 mOhm @ 200mA, 4.5V	1V @ 250µA	1.9nC @ 4.5V	190pF @ 6V	660mW	-55°C ~ 150°C (TJ)	Surface Mount	12-UFQFN Exposed Pad	U-QFN1515-12
MCQ4559-TP	Micro Commercial Co	N&P-CHANNEL MOSFET, SOP-8 PACKAG FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,368	-	60V	4.5A, 3.5A	80 mOhm @ 3.1A, 10V	3V @ 250µA	9nC @ 4.5V	665pF @ 15V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN3190LDW-13	Diodes Incorporated	MOSFET 2N-CH 30V 1A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고3,216	Logic Level Gate	30V	1A	190 mOhm @ 1.3A, 10V	2.8V @ 250µA	2nC @ 10V	87pF @ 20V	320mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
ZDM4306NTC	Diodes Incorporated	MOSFET 2N-CH 60V 2A SOT-223-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power - Max: 3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SOT-223	패키지: SOT-223-8	재고3,200	Standard	60V	2A	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SOT-223
SI5936DU-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6A PWRPK CHPFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Power - Max: 10.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	패키지: PowerPAK? ChipFET? Dual	재고3,616	Logic Level Gate	30V	6A	30 mOhm @ 5A, 10V	2.2V @ 250µA	11nC @ 10V	320pF @ 15V	10.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
CJ3139KDW-G	Comchip Technology	MOSFET 2PCH 20V 660MA SOT363 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Rds On (Max) @ Id, Vgs: 520 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V Power - Max: 150mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고4,896	Standard	20V	660mA (Ta)	520 mOhm @ 1A, 4.5V	1.1V @ 250µA	-	170pF @ 16V	150mW	-40°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BUK9K17-60EX	Nexperia USA Inc.	MOSFET 2N-CH 60V 26A 56LFPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 26A Rds On (Max) @ Id, Vgs: 15.6 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2223pF @ 25V Power - Max: 53W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: SOT-1205, 8-LFPAK56	재고25,728	Logic Level Gate	60V	26A	15.6 mOhm @ 10A, 10V	2.1V @ 1mA	16.5nC @ 5V	2223pF @ 25V	53W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
SI7956DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 150V 2.6A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고238,572	Logic Level Gate	150V	2.6A	105 mOhm @ 4.1A, 10V	4V @ 250µA	26nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI9926CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고510,372	Logic Level Gate	20V	8A	18 mOhm @ 8.3A, 4.5V	1.5V @ 250µA	33nC @ 10V	1200pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMDXB600UNE	Nexperia USA Inc.	MOSFET 2N-CH 20V 0.6A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Power - Max: 265mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: 6-DFN (1.1x1)	패키지: 6-XFDFN Exposed Pad	재고231,534	Logic Level Gate	20V	600mA	620 mOhm @ 600mA, 4.5V	950mV @ 250µA	0.7nC @ 4.5V	21.3pF @ 10V	265mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	6-DFN (1.1x1)
PSMN013-40VLDX	Nexperia USA Inc.	MOSFET 2N-CH 40V 42A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Power - Max: 46W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: -	재고17,955	-	40V	42A (Ta)	13.6mOhm @ 10A, 10V	2.2V @ 1mA	19.4nC @ 10V	1160pF @ 25V	46W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
AO4614BL_DELTA	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 40V 6A/5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V, 1175pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	-	40V	6A (Ta), 5A (Ta)	30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V	3V @ 250µA	10.8nC @ 10V, 22nC @ 10V	650pF @ 20V, 1175pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI3139KDW-TP	Micro Commercial Co	MOSFET 2P-CH 20V 0.66A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Power - Max: 150mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	20V	660mA	520mOhm @ 1A, 4.5V	1.1V @ 250µA	-	175pF @ 16V	150mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMP31D7LDW-13	Diodes Incorporated	MOSFET 2P-CH 0.55A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고30,000	-	-	550mA (Ta)	900mOhm @ 420mA, 10V	2.6V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
CAB011A12GM3	Wolfspeed, Inc.	SIC, MODULE, 11M, 1200V, 48 MM, FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 141A (Tj) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V Vgs(th) (Max) @ Id: 3.9V @ 34mA Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V Power - Max: 10mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	-	1200V (1.2kV)	141A (Tj)	13.9mOhm @ 150A, 15V	3.9V @ 34mA	354nC @ 15V	11000pF @ 1000V	10mW	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
MSCMC120AM03CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 631A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 631A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 500A, 20V Vgs(th) (Max) @ Id: 4V @ 150mA Gate Charge (Qg) (Max) @ Vgs: 1610nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27900pF @ 1000V Power - Max: 2778W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	패키지: -	Request a Quote	-	1200V (1.2kV)	631A (Tc)	3.4mOhm @ 500A, 20V	4V @ 150mA	1610nC @ 20V	27900pF @ 1000V	2778W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
RJK03P7DPA-00-J5A	Renesas Electronics Corporation	MOSFET 2N-CH 30V 15A/30A 8WPAK FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A, 30A Rds On (Max) @ Id, Vgs: 9.4mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 10W, 20W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-WPAK	패키지: -	Request a Quote	Logic Level Gate, 4.5V Drive	30V	15A, 30A	9.4mOhm @ 7.5A, 10V	-	7.1nC @ 4.5V	1190pF @ 10V	10W, 20W	150°C (TJ)	Surface Mount	8-WFDFN Exposed Pad	8-WPAK
SIZF906ADT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 27A 8POWERPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	Request a Quote	-	30V	27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)	3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V	2.2V @ 250µA	49nC @ 10V, 200nC @ 10V	2000pF @ 15V, 8200pF @ 15V	4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
UT6MA2TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 4A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	패키지: -	재고98,130	-	30V	4A (Ta)	46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V	2.5V @ 1mA	4.3nC @ 10V, 6.7nC @ 10V	180pF @ 15V, 305pF @ 15V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
DMN1003UCA6-7	Diodes Incorporated	MOSFET 2N-CH X3-DSN3518-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V Power - Max: 2.67W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN3518-6	패키지: -	재고9,000	-	-	-	-	1.3V @ 1mA	56.5nC @ 4.5V	3315pF @ 6V	2.67W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X3-DSN3518-6

FW389-TL-2WX

ON Semiconductor

MOSFET N-CH 100V 8SOIC

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,576

-

ECH8649-TL-H

ON Semiconductor

MOSFET 2N-CH 20V 7.5A ECH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

패키지: 8-SMD, Flat Lead

재고3,376

Logic Level Gate

20V

7.5A

17 mOhm @ 4A, 4.5V

-

10.8nC @ 4.5V

1060pF @ 10V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

SI6973DQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.1A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고35,604

Logic Level Gate

20V

4.1A

30 mOhm @ 4.8A, 4.5V

450mV @ 250µA (Min)

30nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4622DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V
Power - Max: 3.3W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고452,268

Standard

30V

8A

16 mOhm @ 9.6A, 10V

2.5V @ 1mA

60nC @ 10V

2458pF @ 15V

3.3W, 3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI3948DV-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 6-TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고335,868

Logic Level Gate

30V

-

105 mOhm @ 2.5A, 10V

1V @ 250µA (Min)

3.2nC @ 5V

-

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

VMM650-01F

IXYS

MOSFET 2N-CH 100V 680A Y3-LI

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 680A
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 500A, 10V
Vgs(th) (Max) @ Id: 4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Supplier Device Package: Y3-Li

패키지: Y3-Li

재고6,304

Standard

100V

680A

2.2 mOhm @ 500A, 10V

4V @ 30mA

1440nC @ 10V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Y3-Li

TC1550TG-G

Microchip Technology

MOSFET N/P-CH 500V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,472

Standard

500V

-

60 Ohm @ 50mA, 10V

4V @ 1mA

-

55pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AON3816

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4A 8-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (2.9x2.3)

패키지: 8-SMD, Flat Lead

재고167,988

Logic Level Gate

20V

-

22 mOhm @ 4A, 4.5V

1.1V @ 250µA

13nC @ 4.5V

1100pF @ 10V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (2.9x2.3)

DMN1250UFEL-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V U-QFN1515-1

FET Type: 8 N-Channel, Common Gate, Common Source
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 450 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Power - Max: 660mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-UFQFN Exposed Pad
Supplier Device Package: U-QFN1515-12

패키지: 12-UFQFN Exposed Pad

재고5,760

Standard

12V

2A

450 mOhm @ 200mA, 4.5V

1V @ 250µA

1.9nC @ 4.5V

190pF @ 6V

660mW

-55°C ~ 150°C (TJ)

Surface Mount

12-UFQFN Exposed Pad

U-QFN1515-12

MCQ4559-TP

Micro Commercial Co

N&P-CHANNEL MOSFET, SOP-8 PACKAG

FET Type: N and P-Channel
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,368

-

60V

4.5A, 3.5A

80 mOhm @ 3.1A, 10V

3V @ 250µA

9nC @ 4.5V

665pF @ 15V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN3190LDW-13

Diodes Incorporated

MOSFET 2N-CH 30V 1A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Power - Max: 320mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고3,216

Logic Level Gate

30V

1A

190 mOhm @ 1.3A, 10V

2.8V @ 250µA

2nC @ 10V

87pF @ 20V

320mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

ZDM4306NTC

Diodes Incorporated

MOSFET 2N-CH 60V 2A SOT-223-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SOT-223

패키지: SOT-223-8

재고3,200

Standard

60V

2A

330 mOhm @ 3A, 10V

3V @ 1mA

-

350pF @ 25V

3W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SOT-223

SI5936DU-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6A PWRPK CHPFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Power - Max: 10.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

패키지: PowerPAK? ChipFET? Dual

재고3,616

Logic Level Gate

30V

6A

30 mOhm @ 5A, 10V

2.2V @ 250µA

11nC @ 10V

320pF @ 15V

10.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

CJ3139KDW-G

Comchip Technology

MOSFET 2PCH 20V 660MA SOT363

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 520 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V
Power - Max: 150mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고4,896

Standard

20V

660mA (Ta)

520 mOhm @ 1A, 4.5V

1.1V @ 250µA

-

170pF @ 16V

150mW

-40°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BUK9K17-60EX

Nexperia USA Inc.

MOSFET 2N-CH 60V 26A 56LFPAK

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 26A
Rds On (Max) @ Id, Vgs: 15.6 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2223pF @ 25V
Power - Max: 53W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: SOT-1205, 8-LFPAK56

재고25,728

Logic Level Gate

60V

26A

15.6 mOhm @ 10A, 10V

2.1V @ 1mA

16.5nC @ 5V

2223pF @ 25V

53W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

SI7956DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 150V 2.6A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고238,572

Logic Level Gate

150V

2.6A

105 mOhm @ 4.1A, 10V

4V @ 250µA

26nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI9926CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고510,372

Logic Level Gate

20V

8A

18 mOhm @ 8.3A, 4.5V

1.5V @ 250µA

33nC @ 10V

1200pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

PMDXB600UNE

Nexperia USA Inc.

MOSFET 2N-CH 20V 0.6A 6DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Power - Max: 265mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: 6-DFN (1.1x1)

패키지: 6-XFDFN Exposed Pad

재고231,534

Logic Level Gate

20V

600mA

620 mOhm @ 600mA, 4.5V

950mV @ 250µA

0.7nC @ 4.5V

21.3pF @ 10V

265mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

6-DFN (1.1x1)

PSMN013-40VLDX

Nexperia USA Inc.

MOSFET 2N-CH 40V 42A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Power - Max: 46W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: -

재고17,955

-

40V

42A (Ta)

13.6mOhm @ 10A, 10V

2.2V @ 1mA

19.4nC @ 10V

1160pF @ 25V

46W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

AO4614BL_DELTA

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 6A/5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V, 1175pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

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-

40V

6A (Ta), 5A (Ta)

30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V

3V @ 250µA

10.8nC @ 10V, 22nC @ 10V

650pF @ 20V, 1175pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI3139KDW-TP

Micro Commercial Co

MOSFET 2P-CH 20V 0.66A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Power - Max: 150mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

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-

20V

660mA

520mOhm @ 1A, 4.5V

1.1V @ 250µA

-

175pF @ 16V

150mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMP31D7LDW-13

Diodes Incorporated

MOSFET 2P-CH 0.55A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고30,000

-

550mA (Ta)

900mOhm @ 420mA, 10V

2.6V @ 250µA

-

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

CAB011A12GM3

Wolfspeed, Inc.

SIC, MODULE, 11M, 1200V, 48 MM,

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Power - Max: 10mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

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-

1200V (1.2kV)

141A (Tj)

13.9mOhm @ 150A, 15V

3.9V @ 34mA

354nC @ 15V

11000pF @ 1000V

10mW

-40°C ~ 150°C (TJ)

Chassis Mount

Module

MSCMC120AM03CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 631A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 631A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 500A, 20V
Vgs(th) (Max) @ Id: 4V @ 150mA
Gate Charge (Qg) (Max) @ Vgs: 1610nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27900pF @ 1000V
Power - Max: 2778W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

패키지: -

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-

1200V (1.2kV)

631A (Tc)

3.4mOhm @ 500A, 20V

4V @ 150mA

1610nC @ 20V

27900pF @ 1000V

2778W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

RJK03P7DPA-00-J5A

Renesas Electronics Corporation

MOSFET 2N-CH 30V 15A/30A 8WPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A, 30A
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Power - Max: 10W, 20W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-WPAK

패키지: -

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Logic Level Gate, 4.5V Drive

30V

15A, 30A

9.4mOhm @ 7.5A, 10V

-

7.1nC @ 4.5V

1190pF @ 10V

10W, 20W

150°C (TJ)

Surface Mount

8-WFDFN Exposed Pad

8-WPAK

SIZF906ADT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 27A 8POWERPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

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-

30V

27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)

3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V

2.2V @ 250µA

49nC @ 10V, 200nC @ 10V

2000pF @ 15V, 8200pF @ 15V

4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

UT6MA2TCR

Rohm Semiconductor

MOSFET N/P-CH 30V 4A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Supplier Device Package: HUML2020L8

패키지: -

재고98,130

-

30V

4A (Ta)

46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V

2.5V @ 1mA

4.3nC @ 10V, 6.7nC @ 10V

180pF @ 15V, 305pF @ 15V

2W (Ta)

150°C (TJ)

Surface Mount

6-PowerUDFN

HUML2020L8

DMN1003UCA6-7

Diodes Incorporated

MOSFET 2N-CH X3-DSN3518-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V
Power - Max: 2.67W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X3-DSN3518-6

패키지: -

재고9,000

-

1.3V @ 1mA

56.5nC @ 4.5V

3315pF @ 6V

2.67W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X3-DSN3518-6