페이지 178 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7755TR	Infineon Technologies	MOSFET 2P-CH 20V 3.9A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고47,760	Logic Level Gate	20V	3.9A	51 mOhm @ 3.7A, 4.5V	1.2V @ 250µA	17nC @ 4.5V	1090pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
PHKD13N03LT,118	Nexperia USA Inc.	MOSFET 2N-CH 30V 10.4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.4A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Power - Max: 3.57W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,416	Logic Level Gate	30V	10.4A	20 mOhm @ 8A, 10V	2V @ 250µA	10.7nC @ 5V	752pF @ 15V	3.57W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4650DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,048	Standard	30V	8A	18 mOhm @ 8A, 10V	3V @ 1mA	40nC @ 10V	1550pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM50AM25FTG	Microsemi Corporation	MOSFET 2N-CH 500V 149A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 149A Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고7,280	Standard	500V	149A	25 mOhm @ 74.5A, 10V	4V @ 8mA	1200nC @ 10V	29600pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
FDS8958	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 7A/5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,840	Logic Level Gate	30V	7A, 5A	28 mOhm @ 7A, 10V	3V @ 250µA	26nC @ 10V	789pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ALD210800PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 25 Ohm Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: 16-DIP (0.300", 7.62mm)	재고6,896	Logic Level Gate	10.6V	80mA	25 Ohm	20mV @ 10µA	-	15pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
ALD212900ASAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 14 Ohm Vgs(th) (Max) @ Id: 10mV @ 20µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,888	Logic Level Gate	10.6V	80mA	14 Ohm	10mV @ 20µA	-	30pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MCH6663-TL-W	ON Semiconductor	MOSFET N/P-CH 30V 1.8/1.5A MCPH6 FET Type: N and P-Channel FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A, 1.5A Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: SC-88FL/ MCPH6	패키지: 6-SMD, Flat Leads	재고2,816	Logic Level Gate, 4V Drive	30V	1.8A, 1.5A	188 mOhm @ 900mA, 10V	2.6V @ 1mA	2nC @ 10V	88pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, Flat Leads	SC-88FL/ MCPH6
SIA921EDJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고3,040,632	Logic Level Gate	20V	4.5A	59 mOhm @ 3.6A, 4.5V	1.4V @ 250µA	23nC @ 10V	-	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
ALD1105SBL	Advanced Linear Devices Inc.	MOSFET 2N/2P-CH 10.6V 14SOIC FET Type: 2 N and 2 P-Channel Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고6,688	Standard	10.6V	-	500 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
FDMD8260LET60	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 15A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V Power - Max: 1.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-Power3.3x5	패키지: 12-PowerWDFN	재고4,864	Standard	60V	15A	5.8 mOhm @ 15A, 10V	3V @ 250µA	68nC @ 10V	5245pF @ 30V	1.1W	-55°C ~ 175°C (TJ)	Surface Mount	12-PowerWDFN	12-Power3.3x5
SIZ914DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16A PWRPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 40A Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V Power - Max: 22.7W, 100W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-PowerPair?	패키지: 8-WDFN Exposed Pad	재고5,888	Logic Level Gate	30V	16A, 40A	6.4 mOhm @ 19A, 10V	2.4V @ 250µA	26nC @ 10V	1208pF @ 15V	22.7W, 100W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-PowerPair?
SH8J31GZETB	Rohm Semiconductor	60V PCH+PCH MIDDLE POWER MOSFET FET Type: 2 P-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 70 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,568	-	60V	4.5A	70 mOhm @ 4.5A, 10V	3V @ 1mA	40nC @ 10V	2500pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
CSD85302LT	Texas Instruments	MOSFET 2N-CH FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFLGA Supplier Device Package: 4-Picostar (1.31x1.31)	패키지: 4-XFLGA	재고32,436	Standard	-	-	-	-	7.8nC @ 4.5V	-	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	4-XFLGA	4-Picostar (1.31x1.31)
DMC31D5UDJ-7B	Diodes Incorporated	MOSFET N/P-CH 30V SOT963 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: SOT-963	재고78,582	Logic Level Gate	30V	220mA, 200mA	1.5 Ohm @ 100mA, 4.5V	1V @ 250µA	0.38nC @ 4.5V	22.6pF @ 15V	350mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
DMG6602SVTQ-7	Diodes Incorporated	MOSFET N/P-CH 30V TSOT26 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 840mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: SOT-23-6 Thin, TSOT-23-6	재고54,840	Logic Level Gate	30V	3.4A, 2.8A	60 mOhm @ 3.1A, 10V	2.3V @ 250µA	13nC @ 10V	400pF @ 15V	840mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
SI7232DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 25A PPAK 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V Power - Max: 23W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고75,822	Logic Level Gate	20V	25A	16.4 mOhm @ 10A, 4.5V	1V @ 250µA	32nC @ 8V	1220pF @ 10V	23W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
TSM110NB04LDCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 40V 10A/48A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V Power - Max: 2W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	패키지: -	재고12,705	-	40V	10A (Ta), 48A (Tc)	11mOhm @ 10A, 10V	2.5V @ 250µA	23nC @ 10V	1269pF @ 20V	2W (Ta), 48W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFN (5x6)
DMT32M6LDG-7	Diodes Incorporated	MOSFET 2N-CH 30V 21A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2.2V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Power - Max: 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type G)	패키지: -	재고5,970	-	30V	21A (Ta), 47A (Tc)	2.5mOhm @ 18A, 10V	2.2V @ 400µA	15.6nC @ 4.5V	2101pF @ 15V	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type G)
QH8K51TR	Rohm Semiconductor	MOSFET 2N-CH 100V 2A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: -	재고48,780	-	100V	2A (Ta)	325mOhm @ 2A, 10V	2.5V @ 1mA	4.7nC @ 5V	290pF @ 25V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
UPA675T-T1-A	Renesas Electronics Corporation	MOSFET 2N-CH 16V 0.1A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 3V Power - Max: 200mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88	패키지: -	Request a Quote	-	16V	100mA	12Ohm @ 10mA, 4V	1.1V @ 10µA	-	10pF @ 3V	200mW	-	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88
CSD87330Q3DT	Texas Instruments	MOSFET 2N-CH 30V 20A 8LSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 11.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 1632pF @ 15V Power - Max: 6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (3.3x3.3)	패키지: -	Request a Quote	-	30V	20A (Ta)	9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V	2.1V @ 250µA, 1.15V @ 250µA	5.8nC @ 4.5V, 11.5nC @ 4.5V	900pF @ 15V, 1632pF @ 15V	6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (3.3x3.3)
WAB400M12BM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 468A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 468A (Tc) Rds On (Max) @ Id, Vgs: 4.25mOhm @ 400A, 15V Vgs(th) (Max) @ Id: 3.6V @ 106mA Gate Charge (Qg) (Max) @ Vgs: 1040nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고63	-	1200V (1.2kV)	468A (Tc)	4.25mOhm @ 400A, 15V	3.6V @ 106mA	1040nC @ 15V	29700pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
SQ3985EV-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 20V 3.9A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Power - Max: 3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: -	재고12,420	-	20V	3.9A (Tc)	145mOhm @ 2.8A, 4.5V	1.5V @ 250µA	4.6nC @ 4.5V	350pF @ 10V	3W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
QH8KE5TCR	Rohm Semiconductor	100V 2.0A, DUAL NCH+NCH, TSMT8, FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 202mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Power - Max: 1.5W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: -	재고9,000	-	100V	2A (Ta)	202mOhm @ 2A, 10V	2.5V @ 1mA	2.8nC @ 10V	90pF @ 50V	1.5W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
SP8M3HZGTB	Rohm Semiconductor	MOSFET N/P-CH 30V 5A/4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고6,975	-	30V	5A (Ta), 4.5A (Ta)	51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V	2.5V @ 1mA	3.9nC @ 5V, 8.5nC @ 5V	230pF @ 10V, 850pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN62D2UVTQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	60V	455mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
NTTFD021N08C	onsemi	MOSFET 2N-CH 80V 6A/24A 12WQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V Power - Max: 1.7W (Ta), 26W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWQFN Supplier Device Package: 12-WQFN (3.3x3.3)	패키지: -	재고8,073	-	80V	6A (Ta), 24A (Tc)	21mOhm @ 7.8A, 10V	4V @ 44µA	8.4nC @ 10V	572pF @ 40V	1.7W (Ta), 26W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWQFN	12-WQFN (3.3x3.3)

IRF7755TR

Infineon Technologies

MOSFET 2P-CH 20V 3.9A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고47,760

Logic Level Gate

20V

3.9A

51 mOhm @ 3.7A, 4.5V

1.2V @ 250µA

17nC @ 4.5V

1090pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

PHKD13N03LT,118

Nexperia USA Inc.

MOSFET 2N-CH 30V 10.4A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.4A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Power - Max: 3.57W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,416

Logic Level Gate

30V

10.4A

20 mOhm @ 8A, 10V

2V @ 250µA

10.7nC @ 5V

752pF @ 15V

3.57W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4650DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,048

Standard

30V

8A

18 mOhm @ 8A, 10V

3V @ 1mA

40nC @ 10V

1550pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM50AM25FTG

Microsemi Corporation

MOSFET 2N-CH 500V 149A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 149A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고7,280

Standard

500V

149A

25 mOhm @ 74.5A, 10V

4V @ 8mA

1200nC @ 10V

29600pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

FDS8958

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 7A/5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,840

Logic Level Gate

30V

7A, 5A

28 mOhm @ 7A, 10V

3V @ 250µA

26nC @ 10V

789pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ALD210800PCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 25 Ohm
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: 16-DIP (0.300", 7.62mm)

재고6,896

Logic Level Gate

10.6V

80mA

25 Ohm

20mV @ 10µA

-

15pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

ALD212900ASAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 14 Ohm
Vgs(th) (Max) @ Id: 10mV @ 20µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,888

Logic Level Gate

10.6V

80mA

14 Ohm

10mV @ 20µA

-

30pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MCH6663-TL-W

ON Semiconductor

MOSFET N/P-CH 30V 1.8/1.5A MCPH6

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A, 1.5A
Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SC-88FL/ MCPH6

패키지: 6-SMD, Flat Leads

재고2,816

Logic Level Gate, 4V Drive

30V

1.8A, 1.5A

188 mOhm @ 900mA, 10V

2.6V @ 1mA

2nC @ 10V

88pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, Flat Leads

SC-88FL/ MCPH6

SIA921EDJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고3,040,632

Logic Level Gate

20V

4.5A

59 mOhm @ 3.6A, 4.5V

1.4V @ 250µA

23nC @ 10V

-

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

ALD1105SBL

Advanced Linear Devices Inc.

MOSFET 2N/2P-CH 10.6V 14SOIC

FET Type: 2 N and 2 P-Channel Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고6,688

Standard

10.6V

-

500 Ohm @ 5V

1V @ 1µA

-

3pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

FDMD8260LET60

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 15A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Supplier Device Package: 12-Power3.3x5

패키지: 12-PowerWDFN

재고4,864

Standard

60V

15A

5.8 mOhm @ 15A, 10V

3V @ 250µA

68nC @ 10V

5245pF @ 30V

1.1W

-55°C ~ 175°C (TJ)

Surface Mount

12-PowerWDFN

12-Power3.3x5

SIZ914DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 16A PWRPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Power - Max: 22.7W, 100W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-PowerPair?

패키지: 8-WDFN Exposed Pad

재고5,888

Logic Level Gate

30V

16A, 40A

6.4 mOhm @ 19A, 10V

2.4V @ 250µA

26nC @ 10V

1208pF @ 15V

22.7W, 100W

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-PowerPair?

SH8J31GZETB

Rohm Semiconductor

60V PCH+PCH MIDDLE POWER MOSFET

FET Type: 2 P-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,568

-

60V

4.5A

70 mOhm @ 4.5A, 10V

3V @ 1mA

40nC @ 10V

2500pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

CSD85302LT

Texas Instruments

MOSFET 2N-CH

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFLGA
Supplier Device Package: 4-Picostar (1.31x1.31)

패키지: 4-XFLGA

재고32,436

Standard

-

7.8nC @ 4.5V

-

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

4-XFLGA

4-Picostar (1.31x1.31)

DMC31D5UDJ-7B

Diodes Incorporated

MOSFET N/P-CH 30V SOT963

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: SOT-963

재고78,582

Logic Level Gate

30V

220mA, 200mA

1.5 Ohm @ 100mA, 4.5V

1V @ 250µA

0.38nC @ 4.5V

22.6pF @ 15V

350mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

DMG6602SVTQ-7

Diodes Incorporated

MOSFET N/P-CH 30V TSOT26

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 840mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: SOT-23-6 Thin, TSOT-23-6

재고54,840

Logic Level Gate

30V

3.4A, 2.8A

60 mOhm @ 3.1A, 10V

2.3V @ 250µA

13nC @ 10V

400pF @ 15V

840mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

SI7232DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 25A PPAK 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Power - Max: 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고75,822

Logic Level Gate

20V

25A

16.4 mOhm @ 10A, 4.5V

1V @ 250µA

32nC @ 8V

1220pF @ 10V

23W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

TSM110NB04LDCR-RLG

Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 10A/48A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Power - Max: 2W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)

패키지: -

재고12,705

-

40V

10A (Ta), 48A (Tc)

11mOhm @ 10A, 10V

2.5V @ 250µA

23nC @ 10V

1269pF @ 20V

2W (Ta), 48W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFN (5x6)

DMT32M6LDG-7

Diodes Incorporated

MOSFET 2N-CH 30V 21A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
Power - Max: 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type G)

패키지: -

재고5,970

-

30V

21A (Ta), 47A (Tc)

2.5mOhm @ 18A, 10V

2.2V @ 400µA

15.6nC @ 4.5V

2101pF @ 15V

1.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type G)

QH8K51TR

Rohm Semiconductor

MOSFET 2N-CH 100V 2A TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: -

재고48,780

-

100V

2A (Ta)

325mOhm @ 2A, 10V

2.5V @ 1mA

4.7nC @ 5V

290pF @ 25V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

UPA675T-T1-A

Renesas Electronics Corporation

MOSFET 2N-CH 16V 0.1A SC88

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 16V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 3V
Power - Max: 200mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88

패키지: -

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-

16V

100mA

12Ohm @ 10mA, 4V

1.1V @ 10µA

-

10pF @ 3V

200mW

-

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88

CSD87330Q3DT

Texas Instruments

MOSFET 2N-CH 30V 20A 8LSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 11.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 1632pF @ 15V
Power - Max: 6W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (3.3x3.3)

패키지: -

Request a Quote

-

30V

20A (Ta)

9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V

2.1V @ 250µA, 1.15V @ 250µA

5.8nC @ 4.5V, 11.5nC @ 4.5V

900pF @ 15V, 1632pF @ 15V

6W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

8-LSON (3.3x3.3)

WAB400M12BM3

Wolfspeed, Inc.

SIC 2N-CH 1200V 468A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 468A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 400A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 106mA
Gate Charge (Qg) (Max) @ Vgs: 1040nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고63

-

1200V (1.2kV)

468A (Tc)

4.25mOhm @ 400A, 15V

3.6V @ 106mA

1040nC @ 15V

29700pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SQ3985EV-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 20V 3.9A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Power - Max: 3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: -

재고12,420

-

20V

3.9A (Tc)

145mOhm @ 2.8A, 4.5V

1.5V @ 250µA

4.6nC @ 4.5V

350pF @ 10V

3W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

QH8KE5TCR

Rohm Semiconductor

100V 2.0A, DUAL NCH+NCH, TSMT8,

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 202mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Power - Max: 1.5W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: -

재고9,000

-

100V

2A (Ta)

202mOhm @ 2A, 10V

2.5V @ 1mA

2.8nC @ 10V

90pF @ 50V

1.5W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

SP8M3HZGTB

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고6,975

-

30V

5A (Ta), 4.5A (Ta)

51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V

2.5V @ 1mA

3.9nC @ 5V, 8.5nC @ 5V

230pF @ 10V, 850pF @ 10V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN62D2UVTQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

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-

60V

455mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

NTTFD021N08C

onsemi

MOSFET 2N-CH 80V 6A/24A 12WQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V
Power - Max: 1.7W (Ta), 26W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Supplier Device Package: 12-WQFN (3.3x3.3)

패키지: -

재고8,073

-

80V

6A (Ta), 24A (Tc)

21mOhm @ 7.8A, 10V

4V @ 44µA

8.4nC @ 10V

572pF @ 40V

1.7W (Ta), 26W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWQFN

12-WQFN (3.3x3.3)