페이지 179 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7752TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 4.6A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고4,704	Logic Level Gate	30V	4.6A	30 mOhm @ 4.6A, 10V	2V @ 250µA	9nC @ 4.5V	861pF @ 25V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
BSL315PL6327HTSA1	Infineon Technologies	MOSFET 2P-CH 30V 1.5A TSOP-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고6,224	Logic Level Gate	30V	1.5A	150 mOhm @ 1.5A, 10V	2V @ 11µA	2.3nC @ 5V	282pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
IRF9953TR	Infineon Technologies	MOSFET 2P-CH 30V 2.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고346,992	Logic Level Gate	30V	2.3A	250 mOhm @ 1A, 10V	1V @ 250µA	12nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC6070LFDH-7	Diodes Incorporated	MOSFET N/P-CH 60V V-DFN3030-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Supplier Device Package: V-DFN3030-8	패키지: 8-WDFN	재고4,576	Logic Level Gate	60V	3.1A, 2.4A	85 mOhm @ 1.5A, 10V	3V @ 250µA	11.5nC @ 10V	731pF @ 20V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN	V-DFN3030-8
APTJC120AM25VCT1AG	Microsemi Corporation	MOSFET MODULE FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,624	-	-	-	-	-	-	-	-	-	-	-	-
SI4501ADY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8-SOIC FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 8V Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,248	Logic Level Gate	30V, 8V	6.3A, 4.1A	18 mOhm @ 8.8A, 10V	1.8V @ 250µA	20nC @ 5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI8901EDB-T2-E1	Vishay Siliconix	MOSFET 2P-CH 20V 3.5A 6-MFP FET Type: 2 P-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1V @ 350µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-MICRO FOOT?CSP Supplier Device Package: 6-Micro Foot?	패키지: 6-MICRO FOOT?CSP	재고77,172	Logic Level Gate	20V	3.5A	-	1V @ 350µA	-	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-MICRO FOOT?CSP	6-Micro Foot?
SI5513DC-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 3.1A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.1A Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	패키지: 8-SMD, Flat Lead	재고341,736	Logic Level Gate	20V	3.1A, 2.1A	75 mOhm @ 3.1A, 4.5V	1.5V @ 250µA	6nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
NTHD5902T1	ON Semiconductor	MOSFET 2N-CH 30V 2.9A CHIPFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	패키지: 8-SMD, Flat Lead	재고360,000	Logic Level Gate	30V	2.9A	85 mOhm @ 2.9A, 10V	1V @ 250µA	7.5 nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
NVMFD5483NLWFT1G	ON Semiconductor	MOSFET 2N-CH 60V 6.4A 8DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V Power - Max: 3.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	패키지: 8-PowerTDFN	재고3,520	Logic Level Gate	60V	6.4A	36 mOhm @ 15A, 10V	2.5V @ 250µA	23.4nC @ 10V	668pF @ 25V	3.1W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
SI4943CDY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V Power - Max: 3.1W Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고153,144	Logic Level Gate	20V	8A	19.2 mOhm @ 8.3A, 10V	3V @ 250µA	62nC @ 10V	1945pF @ 10V	3.1W	-50°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
TSM6968DCA RVG	TSC America Inc.	MOSFET, DUAL, N-CHANNEL, TRENCH, FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Power - Max: 1.04W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고4,928	Standard	20V	6.5A (Tc)	22 mOhm @ 6A, 4.5V	1V @ 250µA	15nC @ 4.5V	950pF @ 10V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4288DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 9.2A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.2A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고27,600	Logic Level Gate	40V	9.2A	20 mOhm @ 10A, 10V	2.5V @ 250µA	15nC @ 10V	580pF @ 20V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMTH6016LSDQ-13	Diodes Incorporated	MOSFET ARRAY N-CH 60V 7.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Power - Max: 1.4W, 1.9W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,296	Standard	60V	7.6A (Ta)	19.5 mOhm @ 10A, 10V	2.5V @ 250µA	17nC @ 10V	864pF @ 30V	1.4W, 1.9W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7904BDN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Power - Max: 17.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고19,860	Logic Level Gate	20V	6A	30 mOhm @ 7.1A, 4.5V	1V @ 250µA	24nC @ 8V	860pF @ 10V	17.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
DMNH4015SSDQ-13	Diodes Incorporated	MOSFET ARRAY N-CH 40V 8.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,056	Standard	40V	8.6A (Ta)	15 mOhm @ 12A, 10V	3V @ 250µA	33nC @ 10V	1938pF @ 15V	1.4W, 2W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMP6A17DN8TA	Diodes Incorporated	MOSFET 2P-CH 60V 2.7A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V Power - Max: 1.81W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고43,164	Logic Level Gate	60V	2.7A	125 mOhm @ 2.3A, 10V	1V @ 250µA (Min)	17.7nC @ 10V	637pF @ 30V	1.81W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AO4805	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고11,011,824	Logic Level Gate	30V	9A	19 mOhm @ 8A, 10V	2.8V @ 250µA	39nC @ 10V	2600pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
GSFK3420	Good-Ark Semiconductor	MOSFET N/P-CH 30V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V, 1Ohm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V, 6.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V Power - Max: 275mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고17,850	-	30V	800mA (Tc), 400mA (Tc)	450mOhm @ 300mA, 4.5V, 1Ohm @ 300mA, 4.5V	1.2V @ 250µA	5.2nC @ 4.5V, 6.2nC @ 4.5V	146pF @ 15V	275mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SP8M3FU7TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 5A/4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	-	30V	5A (Ta), 4.5A (Ta)	51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V	2.5V @ 1mA	3.9nC @ 5V, 8.5nC @ 5V	230pF @ 10V, 850pF @ 10V	2W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMC2053UFDB-7	Diodes Incorporated	MOSFET N/P-CH 20V 4.6A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Power - Max: 820mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: -	Request a Quote	-	20V	4.6A (Ta), 3.1A (Ta)	35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V	1V @ 250µA	7.7nC @ 10V, 12.7nC @ 8V	369pF @ 10V, 440pF @ 10V	820mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
PJT7808_R1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 0.5A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고17,577	Logic Level Gate, 1.2V Drive	20V	500mA (Ta)	400mOhm @ 500mA, 4.5V	900mV @ 250µA	1.4nC @ 4.5V	67pF @ 10V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DI035N06PQ2-AQ	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 30V Power - Max: 35.7W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: TDSON-8-4	패키지: -	Request a Quote	Logic Level Gate	60V	35A (Tc)	15mOhm @ 12A, 10V	2.5V @ 250µA	14.6nC @ 10V	782pF @ 30V	35.7W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	TDSON-8-4
FDG6321C-F169	onsemi	MOSFET N/P-CH 25V 0.5A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 410mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V, 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 62pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	Request a Quote	Logic Level Gate	25V	500mA (Ta), 410mA (Ta)	450mOhm @ 500mA, 4.5V, 1.1Ohm @ 410mA, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V, 1.5nC @ 4.5V	50pF @ 10V, 62pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
FDG6332C-F085P	onsemi	MOSFET N/P-CH 20V 0.7A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 600mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V, 114pF @ 10V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	Request a Quote	-	20V	700mA (Ta), 600mA (Ta)	300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V, 2nC @ 4.5V	113pF @ 10V, 114pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
6706A	Goford Semiconductor	MOSFET 30V 6.5A/5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), 5A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V Power - Max: 2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고12,000	-	30V	6.5A (Tc), 5A (Tc)	30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V	2V @ 250µA, 2.5V @ 250µA	5.2nC @ 10V, 9.2nC @ 10V	255pF @ 15V, 520pF @ 15V	2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IRF7316QTRPBF	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	Logic Level Gate	30V	4.9A	58mOhm @ 4.9A, 10V	1V @ 250µA	34nC @ 10V	710pF @ 25V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
TM3055-TL-E-ON	onsemi	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IRF7752TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 4.6A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고4,704

Logic Level Gate

30V

4.6A

30 mOhm @ 4.6A, 10V

2V @ 250µA

9nC @ 4.5V

861pF @ 25V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

BSL315PL6327HTSA1

Infineon Technologies

MOSFET 2P-CH 30V 1.5A TSOP-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고6,224

Logic Level Gate

30V

1.5A

150 mOhm @ 1.5A, 10V

2V @ 11µA

2.3nC @ 5V

282pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

IRF9953TR

Infineon Technologies

MOSFET 2P-CH 30V 2.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고346,992

Logic Level Gate

30V

2.3A

250 mOhm @ 1A, 10V

1V @ 250µA

12nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC6070LFDH-7

Diodes Incorporated

MOSFET N/P-CH 60V V-DFN3030-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN
Supplier Device Package: V-DFN3030-8

패키지: 8-WDFN

재고4,576

Logic Level Gate

60V

3.1A, 2.4A

85 mOhm @ 1.5A, 10V

3V @ 250µA

11.5nC @ 10V

731pF @ 20V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN

V-DFN3030-8

APTJC120AM25VCT1AG

Microsemi Corporation

MOSFET MODULE

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,624

-

SI4501ADY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V/8V 8-SOIC

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,248

Logic Level Gate

30V, 8V

6.3A, 4.1A

18 mOhm @ 8.8A, 10V

1.8V @ 250µA

20nC @ 5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI8901EDB-T2-E1

Vishay Siliconix

MOSFET 2P-CH 20V 3.5A 6-MFP

FET Type: 2 P-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-MICRO FOOT?CSP
Supplier Device Package: 6-Micro Foot?

패키지: 6-MICRO FOOT?CSP

재고77,172

Logic Level Gate

20V

3.5A

-

1V @ 350µA

-

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-MICRO FOOT?CSP

6-Micro Foot?

SI5513DC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 3.1A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.1A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

패키지: 8-SMD, Flat Lead

재고341,736

Logic Level Gate

20V

3.1A, 2.1A

75 mOhm @ 3.1A, 4.5V

1.5V @ 250µA

6nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

NTHD5902T1

ON Semiconductor

MOSFET 2N-CH 30V 2.9A CHIPFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

패키지: 8-SMD, Flat Lead

재고360,000

Logic Level Gate

30V

2.9A

85 mOhm @ 2.9A, 10V

1V @ 250µA

7.5 nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

NVMFD5483NLWFT1G

ON Semiconductor

MOSFET 2N-CH 60V 6.4A 8DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

패키지: 8-PowerTDFN

재고3,520

Logic Level Gate

60V

6.4A

36 mOhm @ 15A, 10V

2.5V @ 250µA

23.4nC @ 10V

668pF @ 25V

3.1W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

SI4943CDY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 8A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Power - Max: 3.1W
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고153,144

Logic Level Gate

20V

8A

19.2 mOhm @ 8.3A, 10V

3V @ 250µA

62nC @ 10V

1945pF @ 10V

3.1W

-50°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

TSM6968DCA RVG

TSC America Inc.

MOSFET, DUAL, N-CHANNEL, TRENCH,

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Power - Max: 1.04W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고4,928

Standard

20V

6.5A (Tc)

22 mOhm @ 6A, 4.5V

1V @ 250µA

15nC @ 4.5V

950pF @ 10V

1.04W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4288DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 9.2A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고27,600

Logic Level Gate

40V

9.2A

20 mOhm @ 10A, 10V

2.5V @ 250µA

15nC @ 10V

580pF @ 20V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMTH6016LSDQ-13

Diodes Incorporated

MOSFET ARRAY N-CH 60V 7.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Power - Max: 1.4W, 1.9W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,296

Standard

60V

7.6A (Ta)

19.5 mOhm @ 10A, 10V

2.5V @ 250µA

17nC @ 10V

864pF @ 30V

1.4W, 1.9W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7904BDN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 6A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Power - Max: 17.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고19,860

Logic Level Gate

20V

6A

30 mOhm @ 7.1A, 4.5V

1V @ 250µA

24nC @ 8V

860pF @ 10V

17.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

DMNH4015SSDQ-13

Diodes Incorporated

MOSFET ARRAY N-CH 40V 8.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V
Power - Max: 1.4W, 2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,056

Standard

40V

8.6A (Ta)

15 mOhm @ 12A, 10V

3V @ 250µA

33nC @ 10V

1938pF @ 15V

1.4W, 2W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXMP6A17DN8TA

Diodes Incorporated

MOSFET 2P-CH 60V 2.7A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Power - Max: 1.81W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고43,164

Logic Level Gate

60V

2.7A

125 mOhm @ 2.3A, 10V

1V @ 250µA (Min)

17.7nC @ 10V

637pF @ 30V

1.81W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AO4805

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고11,011,824

Logic Level Gate

30V

9A

19 mOhm @ 8A, 10V

2.8V @ 250µA

39nC @ 10V

2600pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

GSFK3420

Good-Ark Semiconductor

MOSFET N/P-CH 30V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V, 1Ohm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V, 6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V
Power - Max: 275mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고17,850

-

30V

800mA (Tc), 400mA (Tc)

450mOhm @ 300mA, 4.5V, 1Ohm @ 300mA, 4.5V

1.2V @ 250µA

5.2nC @ 4.5V, 6.2nC @ 4.5V

146pF @ 15V

275mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SP8M3FU7TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

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-

30V

5A (Ta), 4.5A (Ta)

51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V

2.5V @ 1mA

3.9nC @ 5V, 8.5nC @ 5V

230pF @ 10V, 850pF @ 10V

2W (Ta)

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMC2053UFDB-7

Diodes Incorporated

MOSFET N/P-CH 20V 4.6A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
Power - Max: 820mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: -

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-

20V

4.6A (Ta), 3.1A (Ta)

35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V

1V @ 250µA

7.7nC @ 10V, 12.7nC @ 8V

369pF @ 10V, 440pF @ 10V

820mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

PJT7808_R1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 0.5A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고17,577

Logic Level Gate, 1.2V Drive

20V

500mA (Ta)

400mOhm @ 500mA, 4.5V

900mV @ 250µA

1.4nC @ 4.5V

67pF @ 10V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DI035N06PQ2-AQ

Diotec Semiconductor

IC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 30V
Power - Max: 35.7W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: TDSON-8-4

패키지: -

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Logic Level Gate

60V

35A (Tc)

15mOhm @ 12A, 10V

2.5V @ 250µA

14.6nC @ 10V

782pF @ 30V

35.7W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

TDSON-8-4

FDG6321C-F169

onsemi

MOSFET N/P-CH 25V 0.5A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 410mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V, 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 62pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

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Logic Level Gate

25V

500mA (Ta), 410mA (Ta)

450mOhm @ 500mA, 4.5V, 1.1Ohm @ 410mA, 4.5V

1.5V @ 250µA

2.3nC @ 4.5V, 1.5nC @ 4.5V

50pF @ 10V, 62pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

FDG6332C-F085P

onsemi

MOSFET N/P-CH 20V 0.7A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 600mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V, 114pF @ 10V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

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-

20V

700mA (Ta), 600mA (Ta)

300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V

1.5V @ 250µA

1.5nC @ 4.5V, 2nC @ 4.5V

113pF @ 10V, 114pF @ 10V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

6706A

Goford Semiconductor

MOSFET 30V 6.5A/5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), 5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V, 520pF @ 15V
Power - Max: 2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고12,000

-

30V

6.5A (Tc), 5A (Tc)

30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V

2V @ 250µA, 2.5V @ 250µA

5.2nC @ 10V, 9.2nC @ 10V

255pF @ 15V, 520pF @ 15V

2W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IRF7316QTRPBF

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

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Logic Level Gate

30V

4.9A

58mOhm @ 4.9A, 10V

1V @ 250µA

34nC @ 10V

710pF @ 25V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

TM3055-TL-E-ON

onsemi

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-