페이지 182 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO4822L_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,008	Standard	30V	8A	19 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
TMC1320-LA	Trinamic Motion Control GmbH	MOSFET N/P-CH 30V 8PQFN FET Type: N and P-Channel, Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A, 5.3A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PQFN (3x3)	패키지: 8-PowerTDFN	재고6,864	Standard	30V	7.3A, 5.3A	30 mOhm @ 4A, 10V	3V @ 250µA	7.2nC @ 4.5V	400pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PQFN (3x3)
SI7222DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 6A PPAK 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V Power - Max: 17.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고6,528	Standard	40V	6A	42 mOhm @ 5.7A, 10V	1.6V @ 250µA	29nC @ 10V	700pF @ 20V	17.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI4906DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 6.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고10,092	Standard	40V	6.6A	39 mOhm @ 5A, 10V	2.2V @ 250µA	22nC @ 10V	625pF @ 20V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4830ADY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고955,176	Logic Level Gate	30V	5.7A	22 mOhm @ 7.5A, 10V	3V @ 250µA	11nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDZ2554PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 6.5A BGA FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 10V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 18-WFBGA Supplier Device Package: 18-BGA (2.5x4)	패키지: 18-WFBGA	재고5,360	Logic Level Gate	20V	6.5A	28 mOhm @ 6.5A, 4.5V	1.5V @ 250µA	21nC @ 4.5V	1430pF @ 10V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	18-WFBGA	18-BGA (2.5x4)
IPG20N10S4L35AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 35 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.1V @ 16µA Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V Power - Max: 43W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	패키지: 8-PowerVDFN	재고6,736	Logic Level Gate	100V	20A	35 mOhm @ 17A, 10V	2.1V @ 16µA	17.4nC @ 10V	1105pF @ 25V	43W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
SI3993DV-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 1.8A 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 133 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고453,612	Logic Level Gate	30V	1.8A	133 mOhm @ 2.2A, 10V	3V @ 250µA	5nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SIA920DJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 8V 4.5A SC-70 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.3A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 4V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고5,552	Logic Level Gate	8V	4.5A	27 mOhm @ 5.3A, 4.5V	700mV @ 250µA	7.5nC @ 4.5V	470pF @ 4V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
ALD114813SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 2.7V Vgs(th) (Max) @ Id: 1.26V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고6,336	Depletion Mode	10.6V	12mA, 3mA	500 Ohm @ 2.7V	1.26V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
MCMNP517-TP	Micro Commercial Co	MOSFET N/P-CH 12V 6A/4.1A FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A, 4.1A Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: DFN2020-6U	패키지: 6-VDFN Exposed Pad	재고3,248	Standard	12V	6A, 4.1A	24 mOhm @ 6A, 10V	1V @ 250µA	12nC @ 10V	630pF @ 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	DFN2020-6U
MCH6602-TL-E	ON Semiconductor	MOSFET 2N-CH 30V 0.35A MCPH6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-MCPH	패키지: 6-SMD, Flat Leads	재고23,376	Logic Level Gate	30V	350mA	3.7 Ohm @ 80mA, 4V	-	1.58nC @ 10V	7pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, Flat Leads	6-MCPH
IRF7311TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 6.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,108,992	Logic Level Gate	20V	6.6A	29 mOhm @ 6A, 4.5V	700mV @ 250µA	27nC @ 4.5V	900pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF9952TRPBF	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고963,480	Logic Level Gate	30V	3.5A, 2.3A	100 mOhm @ 2.2A, 10V	1V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1035X-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V SC-89 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고457,200	Logic Level Gate	20V	180mA, 145mA	5 Ohm @ 200mA, 4.5V	400mV @ 250µA (Min)	0.75nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
CCB032M12FM3T	Wolfspeed, Inc.	SIC 6N-CH 1200V 40A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고132	-	1200V (1.2kV)	40A (Tj)	42.6mOhm @ 30A, 15V	3.6V @ 11.5mA	118nC @ 15V	3400pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
TSM076NH04LDCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 40V 14A/34A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V Power - Max: 55.6W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	패키지: -	재고14,970	-	40V	14A (Ta), 34A (Tc)	7.6mOhm @ 17A, 10V	2.2V @ 250µA	22.4nC @ 10V	1344pF @ 25V	55.6W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFNU (5x6)
SQJ264EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	패키지: -	재고17,100	-	60V	20A (Tc), 54A (Tc)	20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V	3.5V @ 250µA	16nC @ 10V, 32nC @ 10V	1000pF @ 25V, 2100pF @ 25V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
AOTS32338C	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 3.8A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V Power - Max: 1.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: -	Request a Quote	-	30V	3.8A (Ta)	50mOhm @ 3.8A, 10V	1.5V @ 250µA	16nC @ 10V	340pF @ 15V	1.2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
GCMX010A120B3B1P	SemiQ	SIC 1200V 10M MOSFET HALF-BRIDGE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 4V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 800V Power - Max: 577W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	재고30	-	1200V (1.2kV)	173A (Tc)	14mOhm @ 100A, 20V	4V @ 40mA	483nC @ 20V	13800pF @ 800V	577W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
BSS84V-7-79	Diodes Incorporated	MOSFET 2P-CH 50V 0.13A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power - Max: 150mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	-	50V	130mA (Ta)	10Ohm @ 100mA, 5V	2V @ 1mA	-	45pF @ 25V	150mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SCH2408-TL-E	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMP2075UFDB-7	Diodes Incorporated	MOSFET 2P-CH 20V 3.8A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: -	재고225,333	-	20V	3.8A (Ta)	75mOhm @ 2.9A, 4.5V	1.4V @ 250µA	8.8nC @ 4.5V	642pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SSM6N37FE-LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.25A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고10,455	Logic Level Gate	20V	250mA	2.2Ohm @ 100mA, 4.5V	1V @ 1mA	-	12pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
DMN62D2UV-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	-	60V	450mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
2N7002KDW_R1_00001	Panjit International Inc.	MOSFET 2N-CH 60V 0.115A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Power - Max: 200mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고78,792	-	60V	115mA (Ta)	3Ohm @ 500mA, 10V	2.5V @ 250µA	0.8nC @ 4.5V	35pF @ 25V	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
NP16N06QLK-E1-AY	Renesas Electronics Corporation	MOSFET 2N-CH 60V 16A 8HSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Power - Max: 1W (Ta), 25W (Tc) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-HSON (5x5.4)	패키지: -	재고12,930	-	60V	16A (Tc)	39mOhm @ 8A, 10V	2.5V @ 250µA	17nC @ 10V	750pF @ 25V	1W (Ta), 25W (Tc)	175°C	Surface Mount	8-PowerLDFN	8-HSON (5x5.4)
NP30N04QUK-E1-AY	Renesas Electronics Corporation	MOSFET 2N-CH 40V 30A 8HSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power - Max: 1W (Ta), 59W (Tc) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-HSON (5x5.4)	패키지: -	재고14,970	-	40V	30A (Tc)	8mOhm @ 15A, 10V	4V @ 250µA	41nC @ 10V	2400pF @ 25V	1W (Ta), 59W (Tc)	175°C	Surface Mount	8-PowerLDFN	8-HSON (5x5.4)

AO4822L_101

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,008

Standard

30V

8A

19 mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

TMC1320-LA

Trinamic Motion Control GmbH

MOSFET N/P-CH 30V 8PQFN

FET Type: N and P-Channel, Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A, 5.3A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (3x3)

패키지: 8-PowerTDFN

재고6,864

Standard

30V

7.3A, 5.3A

30 mOhm @ 4A, 10V

3V @ 250µA

7.2nC @ 4.5V

400pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PQFN (3x3)

SI7222DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 6A PPAK 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
Power - Max: 17.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고6,528

Standard

40V

6A

42 mOhm @ 5.7A, 10V

1.6V @ 250µA

29nC @ 10V

700pF @ 20V

17.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI4906DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 6.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고10,092

Standard

40V

6.6A

39 mOhm @ 5A, 10V

2.2V @ 250µA

22nC @ 10V

625pF @ 20V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4830ADY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고955,176

Logic Level Gate

30V

5.7A

22 mOhm @ 7.5A, 10V

3V @ 250µA

11nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDZ2554PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 6.5A BGA

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 10V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-WFBGA
Supplier Device Package: 18-BGA (2.5x4)

패키지: 18-WFBGA

재고5,360

Logic Level Gate

20V

6.5A

28 mOhm @ 6.5A, 4.5V

1.5V @ 250µA

21nC @ 4.5V

1430pF @ 10V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

18-WFBGA

18-BGA (2.5x4)

IPG20N10S4L35AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Power - Max: 43W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

패키지: 8-PowerVDFN

재고6,736

Logic Level Gate

100V

20A

35 mOhm @ 17A, 10V

2.1V @ 16µA

17.4nC @ 10V

1105pF @ 25V

43W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

SI3993DV-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 1.8A 6-TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 133 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고453,612

Logic Level Gate

30V

1.8A

133 mOhm @ 2.2A, 10V

3V @ 250µA

5nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SIA920DJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 8V 4.5A SC-70

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 4V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고5,552

Logic Level Gate

8V

4.5A

27 mOhm @ 5.3A, 4.5V

700mV @ 250µA

7.5nC @ 4.5V

470pF @ 4V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

ALD114813SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 2.7V
Vgs(th) (Max) @ Id: 1.26V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고6,336

Depletion Mode

10.6V

12mA, 3mA

500 Ohm @ 2.7V

1.26V @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

MCMNP517-TP

Micro Commercial Co

MOSFET N/P-CH 12V 6A/4.1A

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.1A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: DFN2020-6U

패키지: 6-VDFN Exposed Pad

재고3,248

Standard

12V

6A, 4.1A

24 mOhm @ 6A, 10V

1V @ 250µA

12nC @ 10V

630pF @ 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

DFN2020-6U

MCH6602-TL-E

ON Semiconductor

MOSFET 2N-CH 30V 0.35A MCPH6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH

패키지: 6-SMD, Flat Leads

재고23,376

Logic Level Gate

30V

350mA

3.7 Ohm @ 80mA, 4V

-

1.58nC @ 10V

7pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, Flat Leads

6-MCPH

IRF7311TRPBF

Infineon Technologies

MOSFET 2N-CH 20V 6.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,108,992

Logic Level Gate

20V

6.6A

29 mOhm @ 6A, 4.5V

700mV @ 250µA

27nC @ 4.5V

900pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF9952TRPBF

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고963,480

Logic Level Gate

30V

3.5A, 2.3A

100 mOhm @ 2.2A, 10V

1V @ 250µA

14nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1035X-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V SC-89

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고457,200

Logic Level Gate

20V

180mA, 145mA

5 Ohm @ 200mA, 4.5V

400mV @ 250µA (Min)

0.75nC @ 4.5V

-

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

CCB032M12FM3T

Wolfspeed, Inc.

SIC 6N-CH 1200V 40A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고132

-

1200V (1.2kV)

40A (Tj)

42.6mOhm @ 30A, 15V

3.6V @ 11.5mA

118nC @ 15V

3400pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

TSM076NH04LDCR-RLG

Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 14A/34A 8PDFNU

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V
Power - Max: 55.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFNU (5x6)

패키지: -

재고14,970

-

40V

14A (Ta), 34A (Tc)

7.6mOhm @ 17A, 10V

2.2V @ 250µA

22.4nC @ 10V

1344pF @ 25V

55.6W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFNU (5x6)

SQJ264EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

패키지: -

재고17,100

-

60V

20A (Tc), 54A (Tc)

20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V

3.5V @ 250µA

16nC @ 10V, 32nC @ 10V

1000pF @ 25V, 2100pF @ 25V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

AOTS32338C

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 3.8A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
Power - Max: 1.2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: -

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-

30V

3.8A (Ta)

50mOhm @ 3.8A, 10V

1.5V @ 250µA

16nC @ 10V

340pF @ 15V

1.2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

GCMX010A120B3B1P

SemiQ

SIC 1200V 10M MOSFET HALF-BRIDGE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 800V
Power - Max: 577W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

재고30

-

1200V (1.2kV)

173A (Tc)

14mOhm @ 100A, 20V

4V @ 40mA

483nC @ 20V

13800pF @ 800V

577W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

BSS84V-7-79

Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Power - Max: 150mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

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-

50V

130mA (Ta)

10Ohm @ 100mA, 5V

2V @ 1mA

-

45pF @ 25V

150mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SCH2408-TL-E

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

DMP2075UFDB-7

Diodes Incorporated

MOSFET 2P-CH 20V 3.8A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: -

재고225,333

-

20V

3.8A (Ta)

75mOhm @ 2.9A, 4.5V

1.4V @ 250µA

8.8nC @ 4.5V

642pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SSM6N37FE-LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A ES6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고10,455

Logic Level Gate

20V

250mA

2.2Ohm @ 100mA, 4.5V

1V @ 1mA

-

12pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

DMN62D2UV-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

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-

60V

450mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

2N7002KDW_R1_00001

Panjit International Inc.

MOSFET 2N-CH 60V 0.115A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Power - Max: 200mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고78,792

-

60V

115mA (Ta)

3Ohm @ 500mA, 10V

2.5V @ 250µA

0.8nC @ 4.5V

35pF @ 25V

200mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

NP16N06QLK-E1-AY

Renesas Electronics Corporation

MOSFET 2N-CH 60V 16A 8HSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Power - Max: 1W (Ta), 25W (Tc)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-HSON (5x5.4)

패키지: -

재고12,930

-

60V

16A (Tc)

39mOhm @ 8A, 10V

2.5V @ 250µA

17nC @ 10V

750pF @ 25V

1W (Ta), 25W (Tc)

175°C

Surface Mount

8-PowerLDFN

8-HSON (5x5.4)

NP30N04QUK-E1-AY

Renesas Electronics Corporation

MOSFET 2N-CH 40V 30A 8HSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Power - Max: 1W (Ta), 59W (Tc)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-HSON (5x5.4)

패키지: -

재고14,970

-

40V

30A (Tc)

8mOhm @ 15A, 10V

4V @ 250µA

41nC @ 10V

2400pF @ 25V

1W (Ta), 59W (Tc)

175°C

Surface Mount

8-PowerLDFN

8-HSON (5x5.4)