페이지 201 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7751	Infineon Technologies	MOSFET 2P-CH 30V 4.5A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고34,716	Logic Level Gate	30V	4.5A	35 mOhm @ 4.5A, 10V	2.5V @ 250µA	44nC @ 10V	1464pF @ 25V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4942DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 5.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고105,588	Logic Level Gate	40V	5.3A	21 mOhm @ 7.4A, 10V	3V @ 250µA	32nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
GWM220-004P3-SL SAM	IXYS	MOSFET 6N-CH 40V 180A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	패키지: 17-SMD, Flat Leads	재고2,336	Standard	40V	180A	-	4V @ 1mA	94nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
SI1025X-T1-E3	Vishay Siliconix	MOSFET 2P-CH 60V 0.19A SOT563F FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 190mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고3,029,664	Logic Level Gate	60V	190mA	4 Ohm @ 500mA, 10V	3V @ 250µA	1.7nC @ 15V	23pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
VHM40-06P1	IXYS	MOSFET 2N-CH 600V 38A ECO-PAC2 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38A Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	패키지: ECO-PAC2	재고7,008	Standard	600V	38A	70 mOhm @ 25A, 10V	5.5V @ 3mA	220nC @ 10V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	ECO-PAC2	ECO-PAC2
ALD1103SBL	Advanced Linear Devices Inc.	MOSFET 2N/2P-CH 10.6V 14SOIC FET Type: 2 N and 2 P-Channel Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고6,360	Standard	10.6V	40mA, 16mA	75 Ohm @ 5V	1V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
SI9926CDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,409,876	Logic Level Gate	20V	8A	18 mOhm @ 8.3A, 4.5V	1.5V @ 250µA	33nC @ 10V	1200pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
HP8KA1TB	Rohm Semiconductor	MOSFET 2N-CH 30V 14A HSOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A Rds On (Max) @ Id, Vgs: 5 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V Power - Max: 3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	패키지: 8-PowerTDFN	재고5,056	Logic Level Gate	30V	14A	5 mOhm @ 14A, 10V	2.5V @ 10mA	24nC @ 4.5V	2550pF @ 15V	3W	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
FDC6302P	Fairchild/ON Semiconductor	MOSFET 2P-CH 25V 0.12A SSOT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 120mA Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고37,920	Logic Level Gate	25V	120mA	10 Ohm @ 200mA, 4.5V	1.5V @ 250µA	0.31nC @ 4.5V	11pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
QH8MA2TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 4.5A/3A TSMT8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고7,248	Logic Level Gate	30V	4.5A, 3A	35 mOhm @ 4.5A, 10V	2.5V @ 1mA	8.4nC @ 10V	365pF @ 10V	1.25W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
DMN5010VAK-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고36,000	Logic Level Gate	50V	280mA	2 Ohm @ 50mA, 5V	1V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
APTM100H45SCTG	Microsemi Corporation	MOSFET 4N-CH 1000V 18A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고5,776	Standard	1000V (1kV)	18A	540 mOhm @ 9A, 10V	5V @ 2.5mA	154nC @ 10V	4350pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
SI5517DU-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 8.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	패키지: PowerPAK? ChipFET? Dual	재고7,704	Logic Level Gate	20V	6A	39 mOhm @ 4.4A, 4.5V	1V @ 250µA	16nC @ 8V	520pF @ 10V	8.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
SIA922EDJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 64 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고144,000	Logic Level Gate	30V	4.5A	64 mOhm @ 3A, 4.5V	1.4V @ 250µA	12nC @ 10V	-	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
PJT138L_R1_00001	Panjit International Inc.	MOSFET 2N-CH 60V 0.2A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 15V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고13,044	-	60V	200mA (Ta)	4.2Ohm @ 200mA, 10V	1.5V @ 250µA	0.7nC @ 4.5V	15pF @ 15V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMN52D0UVTQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	50V	430mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.4nC @ 10V	41pF @ 25V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
NTTBC070NP10M5L	onsemi	MOSFET N/P-CH 100V 3.5A 8WDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WDFN (3x3)	패키지: -	재고8,028	-	100V	3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)	70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V	3V @ 24µA, 4V @ 40µA	5.6nC @ 10V, 7.3nC @ 10V	252pF @ 50V, 256pF @ 50V	1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-WDFN (3x3)
PJQ5866A_R2_00001	Panjit International Inc.	MOSFET 2N-CH 60V 7A/40A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V Power - Max: 1.7W (Ta), 56W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	패키지: -	재고8,184	-	60V	7A (Ta), 40A (Tc)	17mOhm @ 20A, 10V	2.5V @ 250µA	13.5nC @ 4.5V	1574pF @ 25V	1.7W (Ta), 56W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8
DMN2024UDH-7	Diodes Incorporated	MOSFET 2N-CH 20V 5.2A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 950mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8	패키지: -	Request a Quote	-	20V	5.2A (Ta)	23mOhm @ 6.5A, 4.5V	1V @ 250µA	7.1nC @ 4.5V	647pF @ 10V	950mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerUDFN	U-DFN3030-8
G120N03D32	Goford Semiconductor	MOSFET 2N-CH 30V 28A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V Power - Max: 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (3.15x3.05)	패키지: -	재고14,985	-	30V	28A (Tc)	12mOhm @ 10A, 10V	2.2V @ 250µA	18nC @ 10V	1089pF @ 15V	20W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (3.15x3.05)
DMNH6065SSD-13	Diodes Incorporated	MOSFET 2N-CH 60V 3.8A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	-	60V	3.8A (Ta)	65mOhm @ 3A, 10V	3V @ 250µA	11.3nC @ 10V	446pF @ 30V	1.5W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NVMFWD024N06CT1G	onsemi	MOSFET 2N-CH 60V 8A/24A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V Power - Max: 3.1W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	패키지: -	Request a Quote	-	60V	8A (Ta), 24A (Tc)	22.6mOhm @ 3A, 10V	4V @ 20µA	5.7nC @ 10V	333pF @ 30V	3.1W (Ta), 28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
NVMFD5C650NLWFT1G	onsemi	MOSFET 2N-CH 60V 21A/111A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 98µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V Power - Max: 3.5W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	패키지: -	Request a Quote	-	60V	21A (Ta), 111A (Tc)	4.2mOhm @ 20A, 10V	2.2V @ 98µA	16nC @ 4.5V	2546pF @ 25V	3.5W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
FF2MR12KM1PHOSA1	Infineon Technologies	SIC 2N-CH 1200V 500A AG-62MM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Vgs(th) (Max) @ Id: 5.15V @ 224mA Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MM	패키지: -	Request a Quote	-	1200V (1.2kV)	500A (Tc)	2.13mOhm @ 500A, 15V	5.15V @ 224mA	1340nC @ 15V	39700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-62MM
MCQD08P06Y-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 85mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 15V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	-	60V	8A	85mOhm @ 4.3A, 10V	2.5V @ 250µA	4.27nC @ 4.5V	505pF @ 15V	1.9W	-55°C ~ 150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
TSM8588CV-RGG	Taiwan Semiconductor Corporation	-60V, -4.5A, COMPLEMENTARY P-CHA FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고30,000	-	-	-	-	-	-	-	-	-	-	-	-
PJL9807_R2_00001	Panjit International Inc.	MOSFET 2P-CH 30V 4A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 516pF @ 15V Power - Max: 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	-	30V	4A (Ta)	52mOhm @ 3A, 10V	2.5V @ 250µA	4.8nC @ 4.5V	516pF @ 15V	1.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AON5802BG	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 10A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-DFN-EP (2x5)	패키지: -	Request a Quote	-	30V	10A (Ta)	18mOhm @ 7A, 4.5V	1.5V @ 250µA	32nC @ 10V	1050pF @ 15V	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-DFN-EP (2x5)

IRF7751

Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고34,716

Logic Level Gate

30V

4.5A

35 mOhm @ 4.5A, 10V

2.5V @ 250µA

44nC @ 10V

1464pF @ 25V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4942DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 5.3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고105,588

Logic Level Gate

40V

5.3A

21 mOhm @ 7.4A, 10V

3V @ 250µA

32nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

GWM220-004P3-SL SAM

IXYS

MOSFET 6N-CH 40V 180A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Supplier Device Package: ISOPLUS-DIL?

패키지: 17-SMD, Flat Leads

재고2,336

Standard

40V

180A

-

4V @ 1mA

94nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Flat Leads

ISOPLUS-DIL?

SI1025X-T1-E3

Vishay Siliconix

MOSFET 2P-CH 60V 0.19A SOT563F

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고3,029,664

Logic Level Gate

60V

190mA

4 Ohm @ 500mA, 10V

3V @ 250µA

1.7nC @ 15V

23pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

VHM40-06P1

IXYS

MOSFET 2N-CH 600V 38A ECO-PAC2

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

패키지: ECO-PAC2

재고7,008

Standard

600V

38A

70 mOhm @ 25A, 10V

5.5V @ 3mA

220nC @ 10V

-

-40°C ~ 150°C (TJ)

Chassis Mount

ECO-PAC2

ALD1103SBL

Advanced Linear Devices Inc.

MOSFET 2N/2P-CH 10.6V 14SOIC

FET Type: 2 N and 2 P-Channel Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA
Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고6,360

Standard

10.6V

40mA, 16mA

75 Ohm @ 5V

1V @ 10µA

-

10pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

SI9926CDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,409,876

Logic Level Gate

20V

8A

18 mOhm @ 8.3A, 4.5V

1.5V @ 250µA

33nC @ 10V

1200pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

HP8KA1TB

Rohm Semiconductor

MOSFET 2N-CH 30V 14A HSOP8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Power - Max: 3W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

패키지: 8-PowerTDFN

재고5,056

Logic Level Gate

30V

14A

5 mOhm @ 14A, 10V

2.5V @ 10mA

24nC @ 4.5V

2550pF @ 15V

3W

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

FDC6302P

Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.12A SSOT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 120mA
Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고37,920

Logic Level Gate

25V

120mA

10 Ohm @ 200mA, 4.5V

1.5V @ 250µA

0.31nC @ 4.5V

11pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

QH8MA2TCR

Rohm Semiconductor

MOSFET N/P-CH 30V 4.5A/3A TSMT8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고7,248

Logic Level Gate

30V

4.5A, 3A

35 mOhm @ 4.5A, 10V

2.5V @ 1mA

8.4nC @ 10V

365pF @ 10V

1.25W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

DMN5010VAK-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고36,000

Logic Level Gate

50V

280mA

2 Ohm @ 50mA, 5V

1V @ 250µA

-

50pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

APTM100H45SCTG

Microsemi Corporation

MOSFET 4N-CH 1000V 18A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고5,776

Standard

1000V (1kV)

18A

540 mOhm @ 9A, 10V

5V @ 2.5mA

154nC @ 10V

4350pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

SI5517DU-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 6A CHIPFET

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 8.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

패키지: PowerPAK? ChipFET? Dual

재고7,704

Logic Level Gate

20V

6A

39 mOhm @ 4.4A, 4.5V

1V @ 250µA

16nC @ 8V

520pF @ 10V

8.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

SIA922EDJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4.5A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 64 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고144,000

Logic Level Gate

30V

4.5A

64 mOhm @ 3A, 4.5V

1.4V @ 250µA

12nC @ 10V

-

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

PJT138L_R1_00001

Panjit International Inc.

MOSFET 2N-CH 60V 0.2A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 15V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고13,044

-

60V

200mA (Ta)

4.2Ohm @ 200mA, 10V

1.5V @ 250µA

0.7nC @ 4.5V

15pF @ 15V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMN52D0UVTQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

Request a Quote

-

50V

430mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.4nC @ 10V

41pF @ 25V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

NTTBC070NP10M5L

onsemi

MOSFET N/P-CH 100V 3.5A 8WDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V
Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3x3)

패키지: -

재고8,028

-

100V

3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)

70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V

3V @ 24µA, 4V @ 40µA

5.6nC @ 10V, 7.3nC @ 10V

252pF @ 50V, 256pF @ 50V

1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-WDFN (3x3)

PJQ5866A_R2_00001

Panjit International Inc.

MOSFET 2N-CH 60V 7A/40A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V
Power - Max: 1.7W (Ta), 56W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: DFN5060B-8

패키지: -

재고8,184

-

60V

7A (Ta), 40A (Tc)

17mOhm @ 20A, 10V

2.5V @ 250µA

13.5nC @ 4.5V

1574pF @ 25V

1.7W (Ta), 56W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

DFN5060B-8

DMN2024UDH-7

Diodes Incorporated

MOSFET 2N-CH 20V 5.2A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Power - Max: 950mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Supplier Device Package: U-DFN3030-8

패키지: -

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20V

5.2A (Ta)

23mOhm @ 6.5A, 4.5V

1V @ 250µA

7.1nC @ 4.5V

647pF @ 10V

950mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerUDFN

U-DFN3030-8

G120N03D32

Goford Semiconductor

MOSFET 2N-CH 30V 28A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (3.15x3.05)

패키지: -

재고14,985

-

30V

28A (Tc)

12mOhm @ 10A, 10V

2.2V @ 250µA

18nC @ 10V

1089pF @ 15V

20W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (3.15x3.05)

DMNH6065SSD-13

Diodes Incorporated

MOSFET 2N-CH 60V 3.8A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

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60V

3.8A (Ta)

65mOhm @ 3A, 10V

3V @ 250µA

11.3nC @ 10V

446pF @ 30V

1.5W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NVMFWD024N06CT1G

onsemi

MOSFET 2N-CH 60V 8A/24A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Power - Max: 3.1W (Ta), 28W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

패키지: -

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-

60V

8A (Ta), 24A (Tc)

22.6mOhm @ 3A, 10V

4V @ 20µA

5.7nC @ 10V

333pF @ 30V

3.1W (Ta), 28W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

NVMFD5C650NLWFT1G

onsemi

MOSFET 2N-CH 60V 21A/111A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Power - Max: 3.5W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

패키지: -

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-

60V

21A (Ta), 111A (Tc)

4.2mOhm @ 20A, 10V

2.2V @ 98µA

16nC @ 4.5V

2546pF @ 25V

3.5W (Ta), 125W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

FF2MR12KM1PHOSA1

Infineon Technologies

SIC 2N-CH 1200V 500A AG-62MM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MM

패키지: -

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-

1200V (1.2kV)

500A (Tc)

2.13mOhm @ 500A, 15V

5.15V @ 224mA

1340nC @ 15V

39700pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-62MM

MCQD08P06Y-TP

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 85mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 15V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

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-

60V

8A

85mOhm @ 4.3A, 10V

2.5V @ 250µA

4.27nC @ 4.5V

505pF @ 15V

1.9W

-55°C ~ 150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

TSM8588CV-RGG

Taiwan Semiconductor Corporation

-60V, -4.5A, COMPLEMENTARY P-CHA

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고30,000

-

PJL9807_R2_00001

Panjit International Inc.

MOSFET 2P-CH 30V 4A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 516pF @ 15V
Power - Max: 1.7W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

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30V

4A (Ta)

52mOhm @ 3A, 10V

2.5V @ 250µA

4.8nC @ 4.5V

516pF @ 15V

1.7W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AON5802BG

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 10A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Power - Max: 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Supplier Device Package: 6-DFN-EP (2x5)

패키지: -

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-

30V

10A (Ta)

18mOhm @ 7A, 4.5V

1.5V @ 250µA

32nC @ 10V

1050pF @ 15V

3.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-WFDFN Exposed Pad

6-DFN-EP (2x5)