페이지 199 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO4813_002	Alpha & Omega Semiconductor Inc.	MOSFET P-CH DUAL 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,928	Standard	30V	7.1A (Ta)	25 mOhm @ 7A, 10V	2.5V @ 250µA	19nC @ 10V	1250pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ECH8653-S-TL-H	ON Semiconductor	MOSFET 2N-CH 20V 7.5A ECH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	패키지: 8-SMD, Flat Lead	재고306,408	-	-	-	-	-	-	-	-	-	Surface Mount	8-SMD, Flat Lead	8-ECH
AOC2800	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 4WLCSP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WLCSP (1.57x1.57)	패키지: 4-UFBGA, WLCSP	재고3,552	Logic Level Gate	-	-	-	-	9.1nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	4-UFBGA, WLCSP	4-WLCSP (1.57x1.57)
AO8818	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 7A 8TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고47,280	Logic Level Gate	30V	-	18 mOhm @ 7A, 10V	1.5V @ 250µA	14nC @ 4.5V	1060pF @ 15V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SQJ941EP-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 8A PPAK SO-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Power - Max: 55W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고7,296	Logic Level Gate	30V	8A	24 mOhm @ 9A, 10V	2.5V @ 250µA	55nC @ 10V	1800pF @ 10V	55W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
BSC0923NDIATMA1	Infineon Technologies	MOSFET 2N-CH 30V 17A/32A TISON8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 32A Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	패키지: 8-PowerTDFN	재고5,408	Logic Level Gate, 4.5V Drive	30V	17A, 32A	5 mOhm @ 20A, 10V	2V @ 250µA	10nC @ 4.5V	1160pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
SP8J5FU6TB	Rohm Semiconductor	MOSFET 2P-CH 30V 7A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고293,808	Logic Level Gate	30V	7A	28 mOhm @ 7A, 10V	2.5V @ 1mA	25nC @ 5V	2600pF @ 10V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMPH6050SPDQ-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V POWERDI506 FET Type: 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	패키지: 8-PowerTDFN	재고4,960	Standard	-	26A (Tc)	48 mOhm @ 5A, 10V	3V @ 250µA	14.5nC @ 4.5V	1525pF @ 30V	-	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
SP8J3FU6TB	Rohm Semiconductor	MOSFET 2P-CH 30V 3.5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고30,000	Logic Level Gate	30V	3.5A	90 mOhm @ 3.5A, 10V	2.5V @ 1mA	5.5nC @ 5V	490pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
VEC2315-TL-W	ON Semiconductor	MOSFET 2P-CH 60V 2.5A VEC8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 137 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	패키지: 8-SMD, Flat Lead	재고4,032	Logic Level Gate, 4V Drive	60V	2.5A	137 mOhm @ 1.5A, 10V	2.6V @ 1mA	11nC @ 10V	420pF @ 20V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8
EFC6604R-TR	ON Semiconductor	MOSFET 2N-CH EFCP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA Supplier Device Package: 6-EFCP (1.9x1.46)	패키지: 6-XFBGA	재고7,424	Logic Level Gate, 2.5V Drive	-	-	-	-	29nC @ 4.5V	-	1.6W	150°C (TJ)	Surface Mount	6-XFBGA	6-EFCP (1.9x1.46)
CSD86350Q5D	Texas Instruments	MOSFET 2N-CH 25V 40A 8SON FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 8V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V Power - Max: 13W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	패키지: 8-PowerLDFN	재고289,596	Logic Level Gate	25V	40A	6 mOhm @ 20A, 8V	2.1V @ 250µA	10.7nC @ 4.5V	1870pF @ 12.5V	13W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (5x6)
AAT7347IAS-T1	Skyworks Solutions Inc.	MOSFET 8SOP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고20,280	-	-	-	-	-	-	-	-	-	-	-	-
2N7002VA-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.28A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고2,133,000	Standard	60V	280mA	7.5 Ohm @ 50mA, 5V	2.5V @ 250µA	-	50pF @ 25V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NTMD5838NLR2G	ON Semiconductor	MOSFET 2N-CH 40V 7.4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.4A Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 20V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고61,620	Logic Level Gate	40V	7.4A	25 mOhm @ 7A, 10V	3V @ 250µA	17nC @ 10V	785pF @ 20V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMC3021LSD-13	Diodes Incorporated	MOSFET N/P-CH 30V 8.5A/7A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고144,360	Logic Level Gate	30V	8.5A, 7A	21 mOhm @ 7A, 10V	2.1V @ 250µA	16.1nC @ 10V	767pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
EPC2103ENGRT	EPC	TRANS GAN SYM HALF BRDG 80V FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고46,464	GaNFET (Gallium Nitride)	80V	23A	5.5 mOhm @ 20A, 5V	2.5V @ 7mA	6.5nC @ 5V	7600pF @ 40V	-	-	Surface Mount	Die	Die
MCH6620-TL-E	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMC2991UDJ-7	Diodes Incorporated	MOSFET N/P-CH 20V 0.5A SOT963 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V Power - Max: 380mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: -	재고29,715	-	20V	500mA (Ta), 360mA (Ta)	990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V	1V @ 250µA	0.35nC @ 4.5V, 0.3nC @ 4.5V	21.5pF @ 15V, 17pF @ 16V	380mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
SQ4946CEY-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 7A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V Power - Max: 4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고32,814	-	60V	7A (Tc)	40mOhm @ 4.5A, 10V	2.5V @ 250µA	22nC @ 10V	865pF @ 25V	4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
HUFA76413DK8T-F085P	onsemi	MOSFET 2N-CH 60V 5.1A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	Logic Level Gate	60V	5.1A (Tc)	49mOhm @ 5.1A, 10V	3V @ 250µA	23nC @ 10V	620pF @ 25V	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN2024UTS-13	Diodes Incorporated	MOSFET 2N-CH 20V 6.2A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 890mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	재고7,470	-	20V	6.2A (Ta), 15.2A (Tc)	24mOhm @ 6.5A, 4.5V	950mV @ 250µA	0.9nC @ 10V	647pF @ 10V	890mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CMSBN6601-HF	Comchip Technology	MOSFET 2N-CH 20V 13A 6CSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: CSPB2718-6	패키지: -	Request a Quote	-	20V	13A (Ta)	11.5mOhm @ 3A, 4.5V	1.3V @ 1mA	25.4nC @ 10V	-	2W (Ta)	150°C	Surface Mount	6-SMD, No Lead	CSPB2718-6
SIX3439KA-TP	Micro Commercial Co	MOSFET N/P-CH 20V 0.75A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	Logic Level Gate	20V	750mA, 600mA	300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V	1.1V @ 250µA	0.8nC @ 4.5V, 0.86nC @ 4.5V	33pF @ 16V, 40pF @ 16V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
G1008B	Goford Semiconductor	MOSFET 100V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Power - Max: 3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고10,500	-	100V	8A (Tc)	130mOhm @ 2A, 10V	3V @ 250µA	15.5nC @ 10V	690pF @ 25V	3W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDPC1012S	Fairchild Semiconductor	MOSFET 2N-CH 25V 13A PWRCLIP-33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V, 3456pF @ 13V Power - Max: 800mW (Ta), 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Powerclip-33	패키지: -	Request a Quote	-	25V	13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)	7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V	2.2V @ 250µA, 2.2V @ 1mA	8nC @ 4.5V, 25nC @ 4.5V	1075pF @ 13V, 3456pF @ 13V	800mW (Ta), 900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Powerclip-33
EFC2J022NUZTCG	onsemi	MOSFET N-CH 12V 2.2MOHM WLCSP10 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SIL3439KA-TP	Micro Commercial Co	MOSFET N/P-CH 20V 1.2A SOT23-6L FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A, 1A Rds On (Max) @ Id, Vgs: 300mOhm @ 650mA, 4.5V, 850mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	패키지: -	Request a Quote	Logic Level Gate	20V	1.2A, 1A	300mOhm @ 650mA, 4.5V, 850mOhm @ 1A, 4.5V	1.1V @ 250µA	0.8nC @ 4.5V, 0.86nC @ 4.5V	33pF @ 16V, 40pF @ 16V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L

AO4813_002

Alpha & Omega Semiconductor Inc.

MOSFET P-CH DUAL 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,928

Standard

30V

7.1A (Ta)

25 mOhm @ 7A, 10V

2.5V @ 250µA

19nC @ 10V

1250pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

ECH8653-S-TL-H

ON Semiconductor

MOSFET 2N-CH 20V 7.5A ECH8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

패키지: 8-SMD, Flat Lead

재고306,408

-

Surface Mount

8-SMD, Flat Lead

8-ECH

AOC2800

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 4WLCSP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WLCSP (1.57x1.57)

패키지: 4-UFBGA, WLCSP

재고3,552

Logic Level Gate

-

9.1nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

4-UFBGA, WLCSP

4-WLCSP (1.57x1.57)

AO8818

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 7A 8TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고47,280

Logic Level Gate

30V

-

18 mOhm @ 7A, 10V

1.5V @ 250µA

14nC @ 4.5V

1060pF @ 15V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SQJ941EP-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 8A PPAK SO-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Power - Max: 55W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고7,296

Logic Level Gate

30V

8A

24 mOhm @ 9A, 10V

2.5V @ 250µA

55nC @ 10V

1800pF @ 10V

55W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

BSC0923NDIATMA1

Infineon Technologies

MOSFET 2N-CH 30V 17A/32A TISON8

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

패키지: 8-PowerTDFN

재고5,408

Logic Level Gate, 4.5V Drive

30V

17A, 32A

5 mOhm @ 20A, 10V

2V @ 250µA

10nC @ 4.5V

1160pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PG-TISON-8

SP8J5FU6TB

Rohm Semiconductor

MOSFET 2P-CH 30V 7A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고293,808

Logic Level Gate

30V

7A

28 mOhm @ 7A, 10V

2.5V @ 1mA

25nC @ 5V

2600pF @ 10V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMPH6050SPDQ-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V POWERDI506

FET Type: 2 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

패키지: 8-PowerTDFN

재고4,960

Standard

-

26A (Tc)

48 mOhm @ 5A, 10V

3V @ 250µA

14.5nC @ 4.5V

1525pF @ 30V

-

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

SP8J3FU6TB

Rohm Semiconductor

MOSFET 2P-CH 30V 3.5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고30,000

Logic Level Gate

30V

3.5A

90 mOhm @ 3.5A, 10V

2.5V @ 1mA

5.5nC @ 5V

490pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

VEC2315-TL-W

ON Semiconductor

MOSFET 2P-CH 60V 2.5A VEC8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 137 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

패키지: 8-SMD, Flat Lead

재고4,032

Logic Level Gate, 4V Drive

60V

2.5A

137 mOhm @ 1.5A, 10V

2.6V @ 1mA

11nC @ 10V

420pF @ 20V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8

EFC6604R-TR

ON Semiconductor

MOSFET 2N-CH EFCP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA
Supplier Device Package: 6-EFCP (1.9x1.46)

패키지: 6-XFBGA

재고7,424

Logic Level Gate, 2.5V Drive

-

29nC @ 4.5V

-

1.6W

150°C (TJ)

Surface Mount

6-XFBGA

6-EFCP (1.9x1.46)

CSD86350Q5D

Texas Instruments

MOSFET 2N-CH 25V 40A 8SON

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 8V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V
Power - Max: 13W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (5x6)

패키지: 8-PowerLDFN

재고289,596

Logic Level Gate

25V

40A

6 mOhm @ 20A, 8V

2.1V @ 250µA

10.7nC @ 4.5V

1870pF @ 12.5V

13W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

8-LSON (5x6)

AAT7347IAS-T1

Skyworks Solutions Inc.

MOSFET 8SOP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고20,280

-

2N7002VA-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.28A SOT-563

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고2,133,000

Standard

60V

280mA

7.5 Ohm @ 50mA, 5V

2.5V @ 250µA

-

50pF @ 25V

150mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NTMD5838NLR2G

ON Semiconductor

MOSFET 2N-CH 40V 7.4A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 20V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고61,620

Logic Level Gate

40V

7.4A

25 mOhm @ 7A, 10V

3V @ 250µA

17nC @ 10V

785pF @ 20V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMC3021LSD-13

Diodes Incorporated

MOSFET N/P-CH 30V 8.5A/7A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고144,360

Logic Level Gate

30V

8.5A, 7A

21 mOhm @ 7A, 10V

2.1V @ 250µA

16.1nC @ 10V

767pF @ 10V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

EPC2103ENGRT

EPC

TRANS GAN SYM HALF BRDG 80V

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고46,464

GaNFET (Gallium Nitride)

80V

23A

5.5 mOhm @ 20A, 5V

2.5V @ 7mA

6.5nC @ 5V

7600pF @ 40V

-

Surface Mount

Die

MCH6620-TL-E

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

DMC2991UDJ-7

Diodes Incorporated

MOSFET N/P-CH 20V 0.5A SOT963

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Power - Max: 380mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: -

재고29,715

-

20V

500mA (Ta), 360mA (Ta)

990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V

1V @ 250µA

0.35nC @ 4.5V, 0.3nC @ 4.5V

21.5pF @ 15V, 17pF @ 16V

380mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

SQ4946CEY-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 7A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V
Power - Max: 4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고32,814

-

60V

7A (Tc)

40mOhm @ 4.5A, 10V

2.5V @ 250µA

22nC @ 10V

865pF @ 25V

4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

HUFA76413DK8T-F085P

onsemi

MOSFET 2N-CH 60V 5.1A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Power - Max: 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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Logic Level Gate

60V

5.1A (Tc)

49mOhm @ 5.1A, 10V

3V @ 250µA

23nC @ 10V

620pF @ 25V

2.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMN2024UTS-13

Diodes Incorporated

MOSFET 2N-CH 20V 6.2A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Power - Max: 890mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

재고7,470

-

20V

6.2A (Ta), 15.2A (Tc)

24mOhm @ 6.5A, 4.5V

950mV @ 250µA

0.9nC @ 10V

647pF @ 10V

890mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CMSBN6601-HF

Comchip Technology

MOSFET 2N-CH 20V 13A 6CSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: CSPB2718-6

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-

20V

13A (Ta)

11.5mOhm @ 3A, 4.5V

1.3V @ 1mA

25.4nC @ 10V

-

2W (Ta)

150°C

Surface Mount

6-SMD, No Lead

CSPB2718-6

SIX3439KA-TP

Micro Commercial Co

MOSFET N/P-CH 20V 0.75A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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Logic Level Gate

20V

750mA, 600mA

300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V

1.1V @ 250µA

0.8nC @ 4.5V, 0.86nC @ 4.5V

33pF @ 16V, 40pF @ 16V

150mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

G1008B

Goford Semiconductor

MOSFET 100V 8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Power - Max: 3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고10,500

-

100V

8A (Tc)

130mOhm @ 2A, 10V

3V @ 250µA

15.5nC @ 10V

690pF @ 25V

3W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDPC1012S

Fairchild Semiconductor

MOSFET 2N-CH 25V 13A PWRCLIP-33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V, 3456pF @ 13V
Power - Max: 800mW (Ta), 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Powerclip-33

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-

25V

13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)

7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V

2.2V @ 250µA, 2.2V @ 1mA

8nC @ 4.5V, 25nC @ 4.5V

1075pF @ 13V, 3456pF @ 13V

800mW (Ta), 900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Powerclip-33

EFC2J022NUZTCG

onsemi

MOSFET N-CH 12V 2.2MOHM WLCSP10

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

SIL3439KA-TP

Micro Commercial Co

MOSFET N/P-CH 20V 1.2A SOT23-6L

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A, 1A
Rds On (Max) @ Id, Vgs: 300mOhm @ 650mA, 4.5V, 850mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

패키지: -

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Logic Level Gate

20V

1.2A, 1A

300mOhm @ 650mA, 4.5V, 850mOhm @ 1A, 4.5V

1.1V @ 250µA

0.8nC @ 4.5V, 0.86nC @ 4.5V

33pF @ 16V, 40pF @ 16V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L