페이지 96 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 어레이

기록 5,684
페이지  96/203
이미지
부품 번호
제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSO204PNTMA1
Infineon Technologies

MOSFET 2P-CH 20V 7A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1513pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: P-DSO-8
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,296
Logic Level Gate
20V
7A
30 mOhm @ 7A, 4.5V
1.2V @ 60µA
35.8nC @ 4.5V
1513pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-DSO-8
hot IRF7755
Infineon Technologies

MOSFET 2P-CH 20V 3.9A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고95,316
Logic Level Gate
20V
3.9A
51 mOhm @ 3.7A, 4.5V
1.2V @ 250µA
17nC @ 4.5V
1090pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot FDQ7238AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 14A/11A 14SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A, 11A
  • Rds On (Max) @ Id, Vgs: 13.2 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
  • Power - Max: 1.3W, 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SO
패키지: 14-SOIC (0.154", 3.90mm Width)
재고72,000
Logic Level Gate
30V
14A, 11A
13.2 mOhm @ 11A, 10V
3V @ 250µA
24nC @ 10V
920pF @ 15V
1.3W, 1.1W
-55°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SO
hot MMDF1N05ER2G
ON Semiconductor

MOSFET 2N-CH 50V 2A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고437,568
Logic Level Gate
50V
2A
300 mOhm @ 1.5A, 10V
3V @ 250µA
12.5nC @ 10V
330pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot FDQ7236AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 14A/11A 14-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A, 11A
  • Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
  • Power - Max: 1.3W, 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SO
패키지: 14-SOIC (0.154", 3.90mm Width)
재고96,912
Logic Level Gate
30V
14A, 11A
8.7 mOhm @ 14A, 10V
3V @ 250µA
24nC @ 15V
920pF @ 15V
1.3W, 1.1W
-55°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SO
SSM6N37CTD(TPL3)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A CST6D

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Power - Max: 140mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: CST6D
패키지: 6-SMD, Flat Leads
재고4,592
Logic Level Gate
20V
250mA
2.2 Ohm @ 100mA, 4.5V
1V @ 1mA
-
12pF @ 10V
140mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
CST6D
hot NTHD4401PT1G
ON Semiconductor

MOSFET 2P-CH 20V 2.1A CHIPFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
패키지: 8-SMD, Flat Lead
재고6,000,000
Logic Level Gate
20V
2.1A
155 mOhm @ 2.1A, 4.5V
1.2V @ 250µA
6nC @ 4.5V
300pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
APTM50DUM38TG
Microsemi Corporation

MOSFET 2N-CH 500V 90A SP4

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
패키지: SP4
재고6,144
Standard
500V
90A
45 mOhm @ 45A, 10V
5V @ 5mA
246nC @ 10V
11200pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
VWM200-01P
IXYS

MOSFET 6N-CH 100V 210A V2

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 210A
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: V2-PAK
  • Supplier Device Package: V2-PAK
패키지: V2-PAK
재고7,968
Standard
100V
210A
5.2 mOhm @ 100A, 10V
4V @ 2mA
430nC @ 10V
-
-
-40°C ~ 175°C (TJ)
Through Hole
V2-PAK
V2-PAK
hot ZXMD63N02XTC
Diodes Incorporated

MOSFET 2N-CH 20V 2.5A 8MSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고60,012
Logic Level Gate
20V
2.5A
130 mOhm @ 1.7A, 4.5V
3V @ 250µA
6nC @ 4.5V
700pF @ 15V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
ALD1115SAL
Advanced Linear Devices Inc.

MOSFET N/P-CH 10.6V 8SOIC

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,136
Standard
10.6V
-
1800 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
FDPC3D5N025X9D
Fairchild/ON Semiconductor

25V SYMMETRIC DUAL N-CHANNEL MOS

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 74A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 26W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,360
Standard
25V
74A
-
3V @ 250µA
24nC @ 4.5V
-
26W
-55°C ~ 150°C (TJ)
Surface Mount
-
-
hot SUD50NP04-77P-T4E3
Vishay Siliconix

MOSFET N/P-CH 40V 8A TO252-4

  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
  • Power - Max: 10.8W, 24W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: TO-252-4L
패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD
재고6,792
Standard
40V
8A
37 mOhm @ 5A, 10V
2.5V @ 250µA
20nC @ 10V
640pF @ 20V
10.8W, 24W
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-5, DPak (4 Leads + Tab), TO-252AD
TO-252-4L
EFC4621R-TR
ON Semiconductor

MOSFET 2N-CH EFCP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA
  • Supplier Device Package: 4-EFCP (1.61x1.61)
패키지: 4-XFBGA
재고4,528
Logic Level Gate, 2.5V Drive
-
-
-
-
29nC @ 4.5V
-
1.6W
150°C (TJ)
Surface Mount
4-XFBGA
4-EFCP (1.61x1.61)
EFC3C001NUZTCG
ON Semiconductor

MOSFET 2N-CH 4WLCSP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLCSP
  • Supplier Device Package: 4-WLCSP (1.26x1.26)
패키지: 4-XFBGA, WLCSP
재고3,072
Logic Level Gate, 2.5V Drive
-
-
-
1.3V @ 1mA
15nC @ 4.5V
-
1.6W
150°C (TJ)
Surface Mount
4-XFBGA, WLCSP
4-WLCSP (1.26x1.26)
hot FDS6892A
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고116,184
Logic Level Gate
20V
7.5A
18 mOhm @ 7.5A, 4.5V
1.5V @ 250µA
17nC @ 4.5V
1333pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
PMDXB600UNEZ
Nexperia USA Inc.

MOSFET 2N-CH 20V 0.6A 6DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
  • Power - Max: 265mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
패키지: 6-XFDFN Exposed Pad
재고220,614
Logic Level Gate
20V
600mA
620 mOhm @ 600mA, 4.5V
950mV @ 250µA
0.7nC @ 4.5V
21.3pF @ 10V
265mW
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
DFN1010B-6
hot DMN26D0UDJ-7
Diodes Incorporated

MOSFET 2N-CH 20V 0.24A SOT963

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 240mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.05V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 14.1pF @ 15V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
패키지: SOT-963
재고242,400
Logic Level Gate
20V
240mA
3 Ohm @ 100mA, 4.5V
1.05V @ 250µA
-
14.1pF @ 15V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
TC8020K6-G
Microchip Technology

MOSFET 6N/6P-CH 200V 56VQFN

  • FET Type: 6 N and 6 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFQFN Exposed Pad
  • Supplier Device Package: 56-QFN (8x8)
패키지: 56-VFQFN Exposed Pad
재고22,200
Standard
200V
-
8 Ohm @ 1A, 10V
2.4V @ 1mA
-
50pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
56-VFQFN Exposed Pad
56-QFN (8x8)
SQJB00EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 60V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8
  • Supplier Device Package: PowerPAK® SO-8
패키지: -
재고6,708
-
60V
30A (Tc)
13mOhm @ 10A, 10V
3.5V @ 250µA
35nC @ 10V
1700pF @ 25V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
6LP04CH-TL-E
onsemi

MOSFET P-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
NTMFD6H852NLT1G
onsemi

MOSFET 2N-CH 80V 0.295A 8DFN

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 295mA
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
  • Power - Max: 250mW (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
패키지: -
Request a Quote
-
80V
295mA
1.6Ohm @ 500mA, 10V
2.5V @ 250µA
5nC @ 4.5V
26pF @ 20V
250mW (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
UM6K1NA-TP
Micro Commercial Co

MOSFET 2N-CH 30V 0.5A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
재고17,670
-
30V
500mA
750mOhm @ 300mA, 10V
1.5V @ 250µA
1.28nC @ 10V
28pF @ 15V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
MKE38P600TLB
IXYS

MOSFET 600V 50A ISOPLUS-SMPD

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD™.B
패키지: -
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-
600V
50A (Tc)
-
-
-
-
-
-
Surface Mount
9-SMD Module
ISOPLUS-SMPD™.B
RJK0230DPA-00-J5A
Renesas Electronics Corporation

MOSFET 2N-CH 25V 20A/50A 8WPAK

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 20A, 50A
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
  • Power - Max: 15W, 35W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-WPAK-D
패키지: -
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Logic Level Gate
25V
20A, 50A
7mOhm @ 10A, 10V
-
7.7nC @ 4.5V
1650pF @ 10V
15W, 35W
150°C (TJ)
Surface Mount
8-PowerVDFN
8-WPAK-D
2N7002DW-7-G
Diodes Incorporated

MOSFET 2N-CH 60V SOT-363

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
KGF16N05D-400
Renesas Electronics Corporation

MOSFET 2N-CH 5.5V 16A 20WLCSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 5.5V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Rds On (Max) @ Id, Vgs: 0.95mOhm @ 8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5V
  • Power - Max: 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-UFLGA, CSP
  • Supplier Device Package: 20-WLCSP (2.48x1.17)
패키지: -
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-
5.5V
16A (Ta)
0.95mOhm @ 8A, 4.5V
900mV @ 250µA
5.5nC @ 4.5V
600pF @ 5V
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
20-UFLGA, CSP
20-WLCSP (2.48x1.17)
PJS6603_S2_00001
Panjit International Inc.

MOSFET N/P-CH 30V 4.4A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: -
재고110,664
-
30V
4.4A (Ta), 2.9A (Ta)
48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
2.1V @ 250µA
5.8nC @ 10V, 9.8nC @ 10V
235pF @ 15V, 396pF @ 15V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6