페이지 104 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 807
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  104/138
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
ARF442
Microsemi Corporation

PWR MOSFET RF N-CH 300V TO-247AD

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고3,840
-
-
-
-
-
-
-
-
TO-247-3
TO-247AD
ON5233,118
NXP

MOSFET RF SOT428DPAK

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,376
-
-
-
-
-
-
-
-
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
MRFE6S9135HSR5
NXP

FET RF 66V 940MHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 940MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 39W
  • Voltage - Rated: 66V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
패키지: NI-880S
재고6,304
940MHz
21dB
28V
-
-
1A
39W
66V
NI-880S
NI-880S
hot MRF7S21170HS
NXP

FET RF 65V 2.17GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
패키지: NI-880S
재고4,784
2.17GHz
16dB
28V
-
-
1.4A
50W
65V
NI-880S
NI-880S
MRF5S21130HR3
NXP

FET RF 65V 2.17GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고6,752
2.11GHz ~ 2.17GHz
13.5dB
28V
-
-
1.2A
28W
65V
NI-880
NI-880
MRF5S19060MR1
NXP

FET RF 65V 1.99GHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고5,344
1.93GHz ~ 1.99GHz
14dB
28V
-
-
750mA
12W
65V
TO-270AB
TO-270 WB-4
2N5950_J18Z
Fairchild/ON Semiconductor

JFET N-CH 30V 15MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고5,072
-
-
-
15mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BLF346,112
Ampleon USA Inc.

RF FET NCHA 65V 16DB SOT119A

  • Transistor Type: N-Channel
  • Frequency: 224.25MHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 13A
  • Noise Figure: -
  • Current - Test: 3A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT-119A
  • Supplier Device Package: CDFM6
패키지: SOT-119A
재고5,120
224.25MHz
16.5dB
28V
13A
-
3A
30W
65V
SOT-119A
CDFM6
BF1101,215
NXP

MOSFET N-CH 7V 30MA SOT143B

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: -
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 1.7dB
  • Current - Test: 12mA
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고7,536
800MHz
-
5V
30mA
1.7dB
12mA
-
7V
TO-253-4, TO-253AA
SOT-143B
2735GN-35M
Microsemi Corporation

FETS RF GAN 150V 2.7-3.5GHZ 55QP

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 2.7GHz ~ 3.5GHz
  • Gain: 12.4dB ~ 13.5dB
  • Voltage - Test: 60V
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 45W
  • Voltage - Rated: 150V
  • Package / Case: 55QP
  • Supplier Device Package: 55QP
패키지: 55QP
재고3,104
2.7GHz ~ 3.5GHz
12.4dB ~ 13.5dB
60V
1mA
-
150mA
45W
150V
55QP
55QP
MMRF1020-04GNR3
NXP

FET RF 2CH 105V 920MHZ OM780-4G

  • Transistor Type: LDMOS (Dual)
  • Frequency: 920MHz
  • Gain: 19.5dB
  • Voltage - Test: 48V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 860mA
  • Power - Output: 100W
  • Voltage - Rated: 105V
  • Package / Case: OM-780G-4L
  • Supplier Device Package: OM-780G-4L
패키지: OM-780G-4L
재고3,088
920MHz
19.5dB
48V
-
-
860mA
100W
105V
OM-780G-4L
OM-780G-4L
AFT21S220W02GSR3
NXP

FET RF 65V 2.14GHZ NI-780S-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 19.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-780GS-2
  • Supplier Device Package: NI-780GS-2
패키지: NI-780GS-2
재고2,208
2.14GHz
19.1dB
28V
-
-
1.2A
50W
65V
NI-780GS-2
NI-780GS-2
hot MRF8P9210NR3
NXP

FET RF 2CH 70V 960MHZ OM780-4

  • Transistor Type: N-Channel
  • Frequency: 960MHz
  • Gain: 16.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 63W
  • Voltage - Rated: 70V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
패키지: NI-780-4
재고4,112
960MHz
16.8dB
28V
-
-
750mA
63W
70V
NI-780-4
NI-780-4
hot PD55025-E
STMicroelectronics

FET RF 40V 500MHZ PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 14.5dB
  • Voltage - Test: 12.5V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 25W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
패키지: PowerSO-10 Exposed Bottom Pad
재고29,868
500MHz
14.5dB
12.5V
7A
-
200mA
25W
40V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
NE552R679A-T1A-A
CEL

FET RF 3V 460MHZ 79A-PKG

  • Transistor Type: LDMOS
  • Frequency: 460MHz
  • Gain: 20dB
  • Voltage - Test: 3V
  • Current Rating: 350mA
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 28dbm
  • Voltage - Rated: 3V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
패키지: 4-SMD, Flat Leads
재고6,032
460MHz
20dB
3V
350mA
-
300mA
28dbm
3V
4-SMD, Flat Leads
79A
ATF-551M4-TR2
Broadcom Limited

IC PHEMT 2GHZ 2.7V 10MA MINIPAK

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 17.5dB
  • Voltage - Test: 2.7V
  • Current Rating: 100mA
  • Noise Figure: 0.5dB
  • Current - Test: 10mA
  • Power - Output: 14.6dBm
  • Voltage - Rated: 5V
  • Package / Case: 0505 (1412 Metric)
  • Supplier Device Package: MiniPak 1412
패키지: 0505 (1412 Metric)
재고6,816
2GHz
17.5dB
2.7V
100mA
0.5dB
10mA
14.6dBm
5V
0505 (1412 Metric)
MiniPak 1412
BLF6G10S-45,112
Ampleon USA Inc.

RF FET LDMOS 65V 23DB SOT608B

  • Transistor Type: LDMOS
  • Frequency: 922.5MHz ~ 957.5MHz
  • Gain: 23dB
  • Voltage - Test: 28V
  • Current Rating: 13A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 1W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608B
  • Supplier Device Package: CDFM2
패키지: SOT-608B
재고6,400
922.5MHz ~ 957.5MHz
23dB
28V
13A
-
350mA
1W
65V
SOT-608B
CDFM2
IXZR18N50B-00
IXYS

RF MOSFET N-CHANNEL PLUS247-3

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 350W
  • Voltage - Rated: 500V
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고6,504
-
-
-
1mA
-
-
350W
500V
TO-247-3
PLUS247?-3
VRF2944
Microsemi Corporation

MOSF RF N CH 170V 50A M177

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: 50A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 400W
  • Voltage - Rated: 170V
  • Package / Case: M177
  • Supplier Device Package: M177
패키지: M177
재고5,536
30MHz
22dB
50V
50A
-
250mA
400W
170V
M177
M177
BLF6G21-10G,135
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT538A

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 700mW
  • Voltage - Rated: 65V
  • Package / Case: SOT-538A
  • Supplier Device Package: 2-CDIP
패키지: SOT-538A
재고5,040
2.11GHz ~ 2.17GHz
18.5dB
28V
-
-
100mA
700mW
65V
SOT-538A
2-CDIP
SAV-581
Mini-Circuits

RF MOSFET E-PHEMT 3V MMM1362

  • Transistor Type: E-pHEMT
  • Frequency: 45MHz ~ 6GHz
  • Gain: 22.3dB
  • Voltage - Test: 3 V
  • Current Rating: -
  • Noise Figure: 1.5dB
  • Current - Test: 30 mA
  • Power - Output: 20.5dBm
  • Voltage - Rated: 5 V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: MMM1362
패키지: -
재고3,987
45MHz ~ 6GHz
22.3dB
3 V
-
1.5dB
30 mA
20.5dBm
5 V
SC-82A, SOT-343
MMM1362
PTFA220081M-V4
MACOM Technology Solutions

RF MOSFET LDMOS 28V 10SON

  • Transistor Type: LDMOS
  • Frequency: 940MHz
  • Gain: 20.7dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 8W
  • Voltage - Rated: 65 V
  • Package / Case: 10-LDFN Exposed Pad
  • Supplier Device Package: PG-SON-10
패키지: -
Request a Quote
940MHz
20.7dB
28 V
-
-
100 mA
8W
65 V
10-LDFN Exposed Pad
PG-SON-10
CGH35060F2
MACOM Technology Solutions

RF MOSFET HEMT 28V 440193

  • Transistor Type: HEMT
  • Frequency: 3.1GHz ~ 3.5GHz
  • Gain: 13dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 47.6dBm
  • Voltage - Rated: 125 V
  • Package / Case: 440193
  • Supplier Device Package: 440193
패키지: -
재고111
3.1GHz ~ 3.5GHz
13dB
28 V
-
-
200 mA
47.6dBm
125 V
440193
440193
C4H2350N05X
Ampleon USA Inc.

RF MOSFET 48V 6DFN

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 2.3GHz ~ 5GHz
  • Gain: 18.6dB
  • Voltage - Test: 48 V
  • Current Rating: 133µA
  • Noise Figure: -
  • Current - Test: 10 mA
  • Power - Output: 5W
  • Voltage - Rated: 150 V
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (4.5x4)
패키지: -
Request a Quote
2.3GHz ~ 5GHz
18.6dB
48 V
133µA
-
10 mA
5W
150 V
6-VDFN Exposed Pad
6-DFN (4.5x4)
BLA9H0912L-1200PU
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT539A

  • Transistor Type: LDMOS
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 19dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 75 mA
  • Power - Output: 1200W
  • Voltage - Rated: 106 V
  • Package / Case: SOT-539A
  • Supplier Device Package: SOT539A
패키지: -
재고99
960MHz ~ 1.215GHz
19dB
50 V
2.8µA
-
75 mA
1200W
106 V
SOT-539A
SOT539A
GTRB204402FC-1-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 1.93GHz ~ 2.02GHz
  • Gain: 16.3dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 350W
  • Voltage - Rated: 48 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
패키지: -
Request a Quote
1.93GHz ~ 2.02GHz
16.3dB
-
-
-
-
350W
48 V
H-37248C-4
H-37248C-4
PTFA092201E-V4-R0
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 30 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.85 A
  • Power - Output: 220W
  • Voltage - Rated: 65 V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-36260-2
패키지: -
Request a Quote
920MHz ~ 960MHz
18.5dB
30 V
10µA
-
1.85 A
220W
65 V
2-Flatpack, Fin Leads, Flanged
H-36260-2
UF2840P
MACOM Technology Solutions

RF MOSFET 28V 4L-FLG

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 500MHz
  • Gain: 10dB
  • Voltage - Test: 28 V
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 40W
  • Voltage - Rated: 65 V
  • Package / Case: 4L-FLG
  • Supplier Device Package: 4L-FLG
패키지: -
Request a Quote
500MHz
10dB
28 V
1mA
-
500 mA
40W
65 V
4L-FLG
4L-FLG