페이지 107 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  107/138
이미지
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제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA092211FLV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.75A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-34288-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고7,408
920MHz ~ 960MHz
18dB
30V
-
-
1.75A
50W
65V
2-Flatpack, Fin Leads, Flanged
H-34288-2
PTFA041501HL V1
Infineon Technologies

IC FET RF LDMOS 150W PG-64248-2

  • Transistor Type: LDMOS
  • Frequency: 470MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: PG-64248-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고6,032
470MHz
21dB
28V
1µA
-
900mA
150W
65V
2-Flatpack, Fin Leads, Flanged
PG-64248-2
NE3513M04-A
CEL

FET RF 4V 12GHZ M04 4SMD

  • Transistor Type: N-Channel GaAs HJ-FET
  • Frequency: 12GHz
  • Gain: 13dB
  • Voltage - Test: 2V
  • Current Rating: 60mA
  • Noise Figure: 0.65dB
  • Current - Test: 10mA
  • Power - Output: 125mW
  • Voltage - Rated: 4V
  • Package / Case: SOT-343F
  • Supplier Device Package: M04
패키지: SOT-343F
재고3,904
12GHz
13dB
2V
60mA
0.65dB
10mA
125mW
4V
SOT-343F
M04
MRF8S21120HR3
NXP

FET RF 65V 2.17GHZ NI780H

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고3,248
2.17GHz
17.6dB
28V
-
-
850mA
28W
65V
NI-780
NI-780
NE3510M04-A
CEL

FET RF 4V 4GHZ M04

  • Transistor Type: HFET
  • Frequency: 4GHz
  • Gain: 16dB
  • Voltage - Test: 2V
  • Current Rating: 97mA
  • Noise Figure: 0.45dB
  • Current - Test: 15mA
  • Power - Output: 11dBm
  • Voltage - Rated: 4V
  • Package / Case: SOT-343F
  • Supplier Device Package: M04
패키지: SOT-343F
재고5,120
4GHz
16dB
2V
97mA
0.45dB
15mA
11dBm
4V
SOT-343F
M04
PD57018
STMicroelectronics

FET RF 65V 945MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 2.5A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 18W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
패키지: PowerSO-10 Exposed Bottom Pad
재고2,960
945MHz
16.5dB
28V
2.5A
-
100mA
18W
65V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
hot MMBF4416LT1G
ON Semiconductor

JFET N-CH 30V 15MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
패키지: TO-236-3, SC-59, SOT-23-3
재고57,000
-
-
-
15mA
-
-
-
30V
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
MMBFJ212
Fairchild/ON Semiconductor

JFET N-CH 25V 40MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 40mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고4,512
-
-
-
40mA
-
-
-
25V
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BLF7G22L-200,118
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.62A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고3,952
2.11GHz ~ 2.17GHz
18.5dB
28V
-
-
1.62A
55W
65V
SOT-502A
LDMOST
PTVA123501FCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,048
-
-
-
-
-
-
-
-
-
-
PTFA041501EV4R250XTMA1
Infineon Technologies

FET RF LDMOS 150W H36248-2

  • Transistor Type: LDMOS
  • Frequency: 470MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
패키지: 2-Flatpack, Fin Leads
재고5,728
470MHz
21dB
28V
-
-
900mA
150W
65V
2-Flatpack, Fin Leads
H-36248-2
STAC2942BW
STMicroelectronics

TRANS RF PWR N-CH 350W STAC244B

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: -
  • Voltage - Test: 50V
  • Current Rating: 40A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 450W
  • Voltage - Rated: 130V
  • Package / Case: STAC244F
  • Supplier Device Package: STAC244F
패키지: STAC244F
재고3,408
175MHz
-
50V
40A
-
250mA
450W
130V
STAC244F
STAC244F
LET16060C
STMicroelectronics

FET RF 80V 1.6GHZ M243

  • Transistor Type: LDMOS
  • Frequency: 1.6GHz
  • Gain: 13.8dB
  • Voltage - Test: 28V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 60W
  • Voltage - Rated: 80V
  • Package / Case: M243
  • Supplier Device Package: M243
패키지: M243
재고4,352
1.6GHz
13.8dB
28V
12A
-
400mA
60W
80V
M243
M243
BLM7G1822S-80PBY
Ampleon USA Inc.

RF FET LDMOS 65V 28DB SOT12122

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 28dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 80mA
  • Power - Output: 8W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1211-2
  • Supplier Device Package: 16-HSOPF
패키지: SOT-1211-2
재고5,184
2.17GHz
28dB
28V
-
-
80mA
8W
65V
SOT-1211-2
16-HSOPF
PRFX1K80HR5
NXP

RF FET 65V 1800W

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.8MHz ~ 470MHz
  • Gain: 24dB
  • Voltage - Test: -
  • Current Rating: 100mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 1800W
  • Voltage - Rated: 182V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고5,376
1.8MHz ~ 470MHz
24dB
-
100mA
-
-
1800W
182V
SOT-979A
NI-1230-4H
BLL8H1214L-250U
Ampleon USA Inc.

RF FET LDMOS 100V 17DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 250W
  • Voltage - Rated: 100V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502A
패키지: SOT-502A
재고6,672
1.2GHz ~ 1.4GHz
17dB
50V
-
-
100mA
250W
100V
SOT-502A
SOT502A
GTVA263202FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248-4

  • Transistor Type: HEMT
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 17dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 340W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
2.62GHz ~ 2.69GHz
17dB
48 V
-
-
200 mA
340W
125 V
H-37248-4
H-37248-4
BLC10G19XS-551AVZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-5

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 2GHz
  • Gain: 15dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 370 mA
  • Power - Output: 550W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-5
  • Supplier Device Package: SOT1258-5
패키지: -
Request a Quote
1.93GHz ~ 2GHz
15dB
30 V
2.8µA
-
370 mA
550W
65 V
SOT-1258-5
SOT1258-5
CLL3H0914L-700U
Ampleon USA Inc.

RF MOSFET GAN 50V SOT502A

  • Transistor Type: GaN
  • Frequency: 900MHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 700W
  • Voltage - Rated: 150 V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502A
패키지: -
재고84
900MHz ~ 1.4GHz
17dB
50 V
-
-
500 mA
700W
150 V
SOT-502A
SOT502A
CG2H40045P
MACOM Technology Solutions

RF MOSFET HEMT 28V 440206

  • Transistor Type: HEMT
  • Frequency: 4GHz
  • Gain: 16dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 45W
  • Voltage - Rated: 120 V
  • Package / Case: 440206
  • Supplier Device Package: 440206
패키지: -
Request a Quote
4GHz
16dB
28 V
-
-
400 mA
45W
120 V
440206
440206
BLP9LA25SXY
Ampleon USA Inc.

RF MOSFET LDMOS 13.6V TO270

  • Transistor Type: LDMOS
  • Frequency: 941MHz
  • Gain: 18.4dB
  • Voltage - Test: 13.6 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 25W
  • Voltage - Rated: 40 V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2F-1
패키지: -
Request a Quote
941MHz
18.4dB
13.6 V
1.4µA
-
500 mA
25W
40 V
TO-270AA
TO-270-2F-1
NPTB00025AB
MACOM Technology Solutions

RF MOSFET GAN AC360B-2

  • Transistor Type: GaN
  • Frequency: 1MHz ~ 4GHz
  • Gain: 13dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 28 V
  • Package / Case: AC360B-2
  • Supplier Device Package: AC360B-2
패키지: -
Request a Quote
1MHz ~ 4GHz
13dB
-
-
-
-
-
28 V
AC360B-2
AC360B-2
BCL015
BeRex Inc

RF MOSFET PHEMT FET 2V DIE

  • Transistor Type: pHEMT FET
  • Frequency: 1GHz ~ 26GHz
  • Gain: 12dB
  • Voltage - Test: 2 V
  • Current Rating: 40µA
  • Noise Figure: 0.43dB
  • Current - Test: 10 mA
  • Power - Output: 15dBm
  • Voltage - Rated: 5 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
1GHz ~ 26GHz
12dB
2 V
40µA
0.43dB
10 mA
15dBm
5 V
Die
Die
ST50V10200
STMicroelectronics

RF MOSFET LDMOS M246

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: 17.5dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 225W
  • Voltage - Rated: 110 V
  • Package / Case: M246
  • Supplier Device Package: M246
패키지: -
Request a Quote
-
17.5dB
-
1µA
-
-
225W
110 V
M246
M246
A5G26S004NT6
NXP

RF MOSFET DFN

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
CLL3H0914LS-700U
Ampleon USA Inc.

RF MOSFET GAN 50V SOT502B

  • Transistor Type: GaN
  • Frequency: 900MHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 700W
  • Voltage - Rated: 150 V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: -
재고156
900MHz ~ 1.4GHz
17dB
50 V
-
-
500 mA
700W
150 V
SOT-502B
SOT502B
BLC10G27LS-320AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 28V SOT1258-1

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 16dB
  • Voltage - Test: 28 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 320W
  • Voltage - Rated: 65 V
  • Package / Case: SOT1258-1
  • Supplier Device Package: SOT1258-1
패키지: -
재고132
2.5GHz ~ 2.7GHz
16dB
28 V
2.8µA
-
400 mA
320W
65 V
SOT1258-1
SOT1258-1
BLSC9G2731XS-200Z
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1270-1

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 14dB
  • Voltage - Test: 32 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 200W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1270-1
  • Supplier Device Package: SOT-1270-1
패키지: -
Request a Quote
2.7GHz ~ 3.1GHz
14dB
32 V
2.8µA
-
200 mA
200W
65 V
SOT-1270-1
SOT-1270-1