페이지 105 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  105/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA210601EV4XWSA1
Infineon Technologies

IC FET RF LDMOS 60W H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36265-2
패키지: 2-Flatpack, Fin Leads
재고5,088
2.14GHz
16dB
28V
10µA
-
550mA
12W
65V
2-Flatpack, Fin Leads
H-36265-2
BLC9G24LS-170AVY
Ampleon USA Inc.

TRANS RF 170W LDMOS DFM6F

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: DFM6
패키지: -
재고3,520
-
-
-
-
-
-
-
-
-
DFM6
BLF6G27LS-50BN,118
NXP

TRANSISTOR RF PWR LDMOS SOT1112B

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 430mA
  • Power - Output: 3W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1112B
  • Supplier Device Package: CDFM6
패키지: SOT-1112B
재고3,920
2.5GHz ~ 2.7GHz
16.5dB
28V
12A
-
430mA
3W
65V
SOT-1112B
CDFM6
MRF8S19140HSR5
NXP

FET RF 65V 1.96GHZ NI780HS

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 19.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 34W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고2,832
1.96GHz
19.1dB
28V
-
-
1.1A
34W
65V
NI-780S
NI-780S
MRF6S21190HR3
NXP

FET RF 68V 2.17GHZ NI880

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 54W
  • Voltage - Rated: 68V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고3,328
2.11GHz ~ 2.17GHz
16dB
28V
-
-
1.6A
54W
68V
NI-880
NI-880
MRF7S27130HSR5
NXP

FET RF 65V 2.7GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 23W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고7,152
2.7GHz
16.5dB
28V
-
-
1.5A
23W
65V
NI-780S
NI-780S
MRF7S21150HR3
NXP

FET RF 65V 2.17GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.35A
  • Power - Output: 44W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고7,776
2.11GHz ~ 2.17GHz
17.5dB
28V
-
-
1.35A
44W
65V
NI-780
NI-780
MRF5S21150HR5
NXP

FET RF 65V 2.17GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 12.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 33W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고5,552
2.11GHz ~ 2.17GHz
12.5dB
28V
-
-
1.3A
33W
65V
NI-880
NI-880
BLF6G27-45,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT608A

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 7W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608A
  • Supplier Device Package: CDFM2
패키지: SOT-608A
재고3,024
2.7GHz
18dB
28V
20A
-
350mA
7W
65V
SOT-608A
CDFM2
A2T18S162W31SR3
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 1.84GHz
  • Gain: 20.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-2L2LA
  • Supplier Device Package: NI-780S-2L2LA
패키지: NI-780S-2L2LA
재고6,128
1.84GHz
20.1dB
28V
-
-
1A
32W
65V
NI-780S-2L2LA
NI-780S-2L2LA
BLF7G27LS-140,118
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고3,472
2.5GHz ~ 2.7GHz
16.5dB
28V
28A
-
1.3A
30W
65V
SOT-502B
SOT502B
AFT09S220-02NR3
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 920MHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 54W
  • Voltage - Rated: 70V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
패키지: OM-780-2
재고5,984
920MHz
19.5dB
28V
-
-
1.4A
54W
70V
OM-780-2
OM-780-2
NE552R679A-A
CEL

FET RF 3V 460MHZ 79A-PKG

  • Transistor Type: LDMOS
  • Frequency: 460MHz
  • Gain: 20dB
  • Voltage - Test: 3V
  • Current Rating: 350mA
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 28dbm
  • Voltage - Rated: 3V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
패키지: 4-SMD, Flat Leads
재고6,832
460MHz
20dB
3V
350mA
-
300mA
28dbm
3V
4-SMD, Flat Leads
79A
hot SMMBFJ310LT1G
ON Semiconductor

JFET N-CH 25V 10MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 10mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
패키지: TO-236-3, SC-59, SOT-23-3
재고72,000
-
-
-
10mA
-
-
-
25V
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
CE3520K3
CEL

RF FET 4V 20GHZ 4MICROX

  • Transistor Type: pHEMT FET
  • Frequency: 20GHz
  • Gain: 13.8dB
  • Voltage - Test: 2V
  • Current Rating: 15mA
  • Noise Figure: 0.8dB
  • Current - Test: 10mA
  • Power - Output: 125mW
  • Voltage - Rated: 4V
  • Package / Case: 4-Micro-X
  • Supplier Device Package: 4-Micro-X
패키지: 4-Micro-X
재고17,028
20GHz
13.8dB
2V
15mA
0.8dB
10mA
125mW
4V
4-Micro-X
4-Micro-X
BLP05H6110XRY
Ampleon USA Inc.

RF FET LDMOS 135V 27DB SOT12232

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 20mA
  • Power - Output: 110W
  • Voltage - Rated: 135V
  • Package / Case: SOT-1223-2
  • Supplier Device Package: 4-HSOPF
패키지: SOT-1223-2
재고6,800
108MHz
27dB
50V
-
-
20mA
110W
135V
SOT-1223-2
4-HSOPF
BLF6G38-10G,118
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT975C

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 3.1A
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: SOT-975C
  • Supplier Device Package: CDFM2
패키지: SOT-975C
재고6,576
3.4GHz ~ 3.6GHz
14dB
28V
3.1A
-
130mA
2W
65V
SOT-975C
CDFM2
hot 3SK291(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH SMQ

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: 22.5dB
  • Voltage - Test: 6V
  • Current Rating: 30mA
  • Noise Figure: 2.5dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 12.5V
  • Package / Case: SC-61AA
  • Supplier Device Package: SMQ
패키지: SC-61AA
재고54,072
800MHz
22.5dB
6V
30mA
2.5dB
10mA
-
12.5V
SC-61AA
SMQ
BLF182XRU
Ampleon USA Inc.

RF FET LDMOS 135V 28DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 28dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 250W
  • Voltage - Rated: 135V
  • Package / Case: SOT-1121B
  • Supplier Device Package: -
패키지: SOT-1121B
재고6,696
108MHz
28dB
50V
-
-
100mA
250W
135V
SOT-1121B
-
MRF085HR3
NXP

RF MOSFET LDMOS 50V NI650

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 1.215GHz
  • Gain: 25.6dB
  • Voltage - Test: 50 V
  • Current Rating: 2µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 85W
  • Voltage - Rated: 133 V
  • Package / Case: NI-650H-4L
  • Supplier Device Package: NI-650H-4L
패키지: -
Request a Quote
1.8MHz ~ 1.215GHz
25.6dB
50 V
2µA
-
100 mA
85W
133 V
NI-650H-4L
NI-650H-4L
BCF080T
BeRex Inc

RF MOSFET MESFET 8V DIE

  • Transistor Type: MESFET
  • Frequency: 26.5GHz
  • Gain: 9.7dB
  • Voltage - Test: 8 V
  • Current Rating: 320mA
  • Noise Figure: -
  • Current - Test: 160 mA
  • Power - Output: 26dBm
  • Voltage - Rated: 12 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
26.5GHz
9.7dB
8 V
320mA
-
160 mA
26dBm
12 V
Die
Die
GTRA262802FC-V2-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 2.49GHz ~ 2.69GHz
  • Gain: 14dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 250W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
패키지: -
Request a Quote
2.49GHz ~ 2.69GHz
14dB
48 V
-
-
200 mA
250W
125 V
H-37248C-4
H-37248C-4
PTFB212503FL-V2-R0
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-34288-4

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18.1dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.85 A
  • Power - Output: 55W
  • Voltage - Rated: 65 V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-34288-4/2
패키지: -
Request a Quote
2.17GHz
18.1dB
30 V
-
-
1.85 A
55W
65 V
2-Flatpack, Fin Leads, Flanged
H-34288-4/2
NE5511279A-T1-A
CEL

FET RF 20V 900MHZ 79A-PKG

  • Transistor Type: LDMOS
  • Frequency: 900MHz
  • Gain: 15dB
  • Voltage - Test: 7.5 V
  • Current Rating: 3A
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 40dBm
  • Voltage - Rated: 20 V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
패키지: -
Request a Quote
900MHz
15dB
7.5 V
3A
-
400 mA
40dBm
20 V
4-SMD, Flat Leads
79A
BLF7G10LS-250
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT502B

  • Transistor Type: LDMOS
  • Frequency: 869MHz ~ 960MHz
  • Gain: 19.5dB
  • Voltage - Test: 30 V
  • Current Rating: 5µA
  • Noise Figure: -
  • Current - Test: 1.8 A
  • Power - Output: 250W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: -
Request a Quote
869MHz ~ 960MHz
19.5dB
30 V
5µA
-
1.8 A
250W
65 V
SOT-502B
SOT502B
PTVA123501EC-V2-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BF998E6327HTSA1
Infineon Technologies

RF MOSFET 8V SOT143

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 45MHz
  • Gain: 28dB
  • Voltage - Test: 8 V
  • Current Rating: 30mA
  • Noise Figure: 2.8dB
  • Current - Test: 10 mA
  • Power - Output: -
  • Voltage - Rated: 12 V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT-143-3D
패키지: -
Request a Quote
45MHz
28dB
8 V
30mA
2.8dB
10 mA
-
12 V
TO-253-4, TO-253AA
PG-SOT-143-3D
MHT1801A
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
-
-
-
-
-
-
-
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