페이지 115 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  115/138
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제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BF 5030 E6327
Infineon Technologies

MOSFET N-CH 8V 25MA SOT143

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 24dB
  • Voltage - Test: 3V
  • Current Rating: 25mA
  • Noise Figure: 1.3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
패키지: TO-253-4, TO-253AA
재고5,552
800MHz
24dB
3V
25mA
1.3dB
10mA
-
8V
TO-253-4, TO-253AA
PG-SOT143-4
PTFA142401FLV4XWSA1
Infineon Technologies

IC FET RF LDMOS 240W H-34288-2

  • Transistor Type: LDMOS
  • Frequency: 1.5GHz
  • Gain: 16.5dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 240W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-34288-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고7,536
1.5GHz
16.5dB
30V
10µA
-
2A
240W
65V
2-Flatpack, Fin Leads, Flanged
H-34288-2
BLF6G27-10GHJ
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT975C

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 3.5A
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: SOT-975C
  • Supplier Device Package: SOT-975C
패키지: SOT-975C
재고2,624
2.5GHz ~ 2.7GHz
19dB
28V
3.5A
-
130mA
2W
65V
SOT-975C
SOT-975C
BLC8G27LS-245AVY
Ampleon USA Inc.

RF FET LDMOS 65V 14.5DB SOT12512

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.69GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 56W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1251-2
  • Supplier Device Package: SOT-1251-2
패키지: SOT-1251-2
재고3,360
2.5GHz ~ 2.69GHz
14.5dB
28V
-
-
500mA
56W
65V
SOT-1251-2
SOT-1251-2
MRF6VP41KHR6
NXP

FET RF 2CH 110V 450MHZ NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 450MHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고7,744
450MHz
20dB
50V
-
-
150mA
1000W
110V
NI-1230
NI-1230
hot SHF-0289Z
RFMD

FET RF 9V 1.96GHZ SOT-89

  • Transistor Type: HFET
  • Frequency: 1.96GHz
  • Gain: 20dB
  • Voltage - Test: 7V
  • Current Rating: 400mA
  • Noise Figure: 4dB
  • Current - Test: 200mA
  • Power - Output: 30.2dBm
  • Voltage - Rated: 9V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
패키지: TO-243AA
재고136,728
1.96GHz
20dB
7V
400mA
4dB
200mA
30.2dBm
9V
TO-243AA
SOT-89
PD54008
STMicroelectronics

FET RF 25V 500MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 11.5dB
  • Voltage - Test: 7.5V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 25V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
패키지: PowerSO-10 Exposed Bottom Pad
재고2,608
500MHz
11.5dB
7.5V
5A
-
150mA
8W
25V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
MRF6S9060MR1
NXP

FET RF 68V 880MHZ TO-270-2

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 21.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 14W
  • Voltage - Rated: 68V
  • Package / Case: TO-270-2
  • Supplier Device Package: TO-270-2
패키지: TO-270-2
재고2,816
880MHz
21.4dB
28V
-
-
450mA
14W
68V
TO-270-2
TO-270-2
MRF6S19120HR5
NXP

FET RF 68V 1.99GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 19W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고4,784
1.99GHz
15dB
28V
-
-
1A
19W
68V
NI-780
NI-780
MRF5S21150HSR3
NXP

FET RF 65V 2.17GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 12.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 33W
  • Voltage - Rated: 65V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
패키지: NI-880S
재고2,048
2.11GHz ~ 2.17GHz
12.5dB
28V
-
-
1.3A
33W
65V
NI-880S
NI-880S
BF245C_D27Z
Fairchild/ON Semiconductor

JFET N-CH 30V 25MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고4,016
-
-
-
25mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BF1105,215
NXP

MOSFET N-CH 7V DUAL SOT143

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: 20dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 1.7dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고5,136
800MHz
20dB
5V
30mA
1.7dB
-
-
7V
TO-253-4, TO-253AA
SOT-143B
PTVA123501FCV1R0XTMA1
Infineon Technologies

IC AMP RF LDMOS H-37248-2

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 350W
  • Voltage - Rated: 105V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: H-37248-4
재고7,152
1.2GHz ~ 1.4GHz
17dB
50V
-
-
150mA
350W
105V
H-37248-4
H-37248-4
MRF8VP13350GNR3
NXP

TRANS RF LDMOS 350W 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.3GHz
  • Gain: 19.2dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 350W
  • Voltage - Rated: 100V
  • Package / Case: OM-780G-4L
  • Supplier Device Package: OM-780G-4L
패키지: OM-780G-4L
재고2,912
1.3GHz
19.2dB
50V
-
-
100mA
350W
100V
OM-780G-4L
OM-780G-4L
MRFE6VP6300HSR5
NXP

FET RF 2CH 130V 230MHZ NI780S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 26.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 130V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고5,984
230MHz
26.5dB
50V
-
-
100mA
300W
130V
NI-780S-4
NI-780S-4
MRF6V3090NR1
NXP

FET RF 110V 860MHZ TO270-4

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 110V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고4,816
860MHz
22dB
50V
-
-
350mA
18W
110V
TO-270AB
TO-270 WB-4
CGHV1J006D
Cree/Wolfspeed

RF MOSFET HEMT 40V DIE

  • Transistor Type: HEMT
  • Frequency: 18GHz
  • Gain: 17dB
  • Voltage - Test: 40V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 6W
  • Voltage - Rated: 100V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,672
18GHz
17dB
40V
-
-
30mA
6W
100V
Die
Die
2SK209-BL(TE85L,F)
Toshiba Semiconductor and Storage

JFET N-CH SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: 1kHz
  • Gain: -
  • Voltage - Test: 10V
  • Current Rating: -
  • Noise Figure: 1dB
  • Current - Test: 500µA
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
패키지: TO-236-3, SC-59, SOT-23-3
재고22,836
1kHz
-
10V
-
1dB
500µA
-
-
TO-236-3, SC-59, SOT-23-3
SC-59
IXZH10N50L2B
IXYS

RF MOSFET N-CHANNEL TO-247

  • Transistor Type: N-Channel
  • Frequency: 2MHz ~ 110MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 200W
  • Voltage - Rated: 500V
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXFH)
패키지: TO-247-3
재고6,936
2MHz ~ 110MHz
-
-
1mA
-
-
200W
500V
TO-247-3
TO-247 (IXFH)
BCF040T
BeRex Inc

RF MOSFET MESFET 8V DIE

  • Transistor Type: MESFET
  • Frequency: 26.5GHz
  • Gain: 10.4dB
  • Voltage - Test: 8 V
  • Current Rating: 160mA
  • Noise Figure: 1.7dB
  • Current - Test: 80 mA
  • Power - Output: 23dBm
  • Voltage - Rated: 12 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
26.5GHz
10.4dB
8 V
160mA
1.7dB
80 mA
23dBm
12 V
Die
Die
BLS9G3135LS-115U
Ampleon USA Inc.

RF MOSFET LDMOS 50V CDFM2

  • Transistor Type: LDMOS
  • Frequency: 3.1GHz ~ 3.5GHz
  • Gain: 11dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 115W
  • Voltage - Rated: 28 V
  • Package / Case: SOT-1135B
  • Supplier Device Package: CDFM2
패키지: -
재고171
3.1GHz ~ 3.5GHz
11dB
50 V
-
-
600 mA
115W
28 V
SOT-1135B
CDFM2
DRF1510
Microchip Technology

RF MOSFET 500V

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
GTVA107001EC-V1-R250
MACOM Technology Solutions

RF MOSFET HEMT 50V H-36248-2

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 20dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 700W
  • Voltage - Rated: 125 V
  • Package / Case: H-36248-2
  • Supplier Device Package: H-36248-2
패키지: -
Request a Quote
960MHz ~ 1.215GHz
20dB
50 V
-
-
100 mA
700W
125 V
H-36248-2
H-36248-2
MWT-PH7F
CML Microcircuits

RF MOSFET MESFET 3V CHIP

  • Transistor Type: MESFET
  • Frequency: 28GHz
  • Gain: 16dB
  • Voltage - Test: 3 V
  • Current Rating: 110mA
  • Noise Figure: -
  • Current - Test: 110 mA
  • Power - Output: 24dBm
  • Voltage - Rated: -
  • Package / Case: Die
  • Supplier Device Package: Chip
패키지: -
Request a Quote
28GHz
16dB
3 V
110mA
-
110 mA
24dBm
-
Die
Chip
BLF189XRASU
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT539B

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 26.2dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 1700W
  • Voltage - Rated: 135 V
  • Package / Case: SOT-539B
  • Supplier Device Package: SOT539B
패키지: -
재고177
500MHz
26.2dB
50 V
2.8µA
-
150 mA
1700W
135 V
SOT-539B
SOT539B
RF2L24280CB4
STMicroelectronics

RF MOSFET LDMOS 28V D4E

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz ~ 2.5GHz
  • Gain: 13dB
  • Voltage - Test: 28 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 10 mA
  • Power - Output: 280W
  • Voltage - Rated: 65 V
  • Package / Case: D4E
  • Supplier Device Package: D4E
패키지: -
Request a Quote
2.4GHz ~ 2.5GHz
13dB
28 V
1µA
-
10 mA
280W
65 V
D4E
D4E
NTA4153NT1H
onsemi

RF MOSFET 20V SC75

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLC9H10XS-606AZ
Ampleon USA Inc.

RF MOSFET LDMOS 48V SOT1250-4

  • Transistor Type: LDMOS
  • Frequency: 616MHz ~ 960MHz
  • Gain: 18dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.8 A
  • Power - Output: 600W
  • Voltage - Rated: -
  • Package / Case: SOT-1250-4
  • Supplier Device Package: SOT1250-4
패키지: -
재고21
616MHz ~ 960MHz
18dB
48 V
-
-
1.8 A
600W
-
SOT-1250-4
SOT1250-4