페이지 116 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  116/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFB260605ELV1XWSA1
Infineon Technologies

IC FET RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,440
-
-
-
-
-
-
-
-
-
-
BG3430RE6327HTSA1
Infineon Technologies

MOSFET N-CH DUAL 8V 25MA SOT-363

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 800MHz
  • Gain: 25dB
  • Voltage - Test: 5V
  • Current Rating: 25mA
  • Noise Figure: 1.3dB
  • Current - Test: 14mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고5,728
800MHz
25dB
5V
25mA
1.3dB
14mA
-
8V
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
PTF080101S V1
Infineon Technologies

FET RF 65V 960MHZ H-32259-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: H32259-2
  • Supplier Device Package: H-32259-2
패키지: H32259-2
재고3,008
960MHz
18.5dB
28V
1µA
-
150mA
10W
65V
H32259-2
H-32259-2
hot MRF6S21140HR3
NXP

FET RF 68V 2.12GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 2.12GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 30W
  • Voltage - Rated: 68V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고4,832
2.12GHz
15.5dB
28V
-
-
1.2A
30W
68V
NI-880
NI-880
BLF7G10L-250,118
Ampleon USA Inc.

RF FET LDMOS 65V 19.5DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 19.5dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고3,936
920MHz ~ 960MHz
19.5dB
30V
-
-
1.8A
60W
65V
SOT-502A
LDMOST
ON5204,127
NXP

MOSFET RF SOT263 TO-220-5

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-220-5 Formed Leads
  • Supplier Device Package: SOT263-01
패키지: TO-220-5 Formed Leads
재고7,312
-
-
-
-
-
-
-
-
TO-220-5 Formed Leads
SOT263-01
BLF6G10LS-200,118
NXP

FET RF 65V 871.5MHZ SOT502B

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz
  • Gain: 20.2dB
  • Voltage - Test: 28V
  • Current Rating: 49A
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고3,200
871.5MHz
20.2dB
28V
49A
-
1.4A
40W
65V
SOT-502B
SOT502B
NE25139-T1-U73
CEL

FET RF 13V 900MHZ SOT-143

  • Transistor Type: MESFET Dual Gate
  • Frequency: 900MHz
  • Gain: 20dB
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 1.1dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 13V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
패키지: TO-253-4, TO-253AA
재고5,264
900MHz
20dB
5V
40mA
1.1dB
10mA
-
13V
TO-253-4, TO-253AA
SOT-143
BLF6G38-10,112
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT975B

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 3.1A
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: SOT-975B
  • Supplier Device Package: CDFM2
패키지: SOT-975B
재고7,232
3.4GHz ~ 3.6GHz
14dB
28V
3.1A
-
130mA
2W
65V
SOT-975B
CDFM2
BLF6G38-50,135
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 16.5A
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 9W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고2,512
3.4GHz ~ 3.6GHz
14dB
28V
16.5A
-
450mA
9W
65V
SOT-502A
LDMOST
BF1204,135
NXP

FET RF 10V 400MHZ 6TSSOP

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 30dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 0.9dB
  • Current - Test: 12mA
  • Power - Output: -
  • Voltage - Rated: 10V
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고4,320
400MHz
30dB
5V
30mA
0.9dB
12mA
-
10V
6-TSSOP, SC-88, SOT-363
6-TSSOP
NPT1007B
M/A-Com Technology Solutions

TRANSISTOR GAN DC-1200MHZ 200W

  • Transistor Type: HEMT
  • Frequency: 900MHz
  • Gain: 18.3dB
  • Voltage - Test: 28V
  • Current Rating: 20.5A
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 53dBm
  • Voltage - Rated: 100V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,016
900MHz
18.3dB
28V
20.5A
-
1.4A
53dBm
100V
-
-
PD54008TR-E
STMicroelectronics

TRANS RF PWR N-CH POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 11.5dB
  • Voltage - Test: 7.5V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 25V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
패키지: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
재고7,616
500MHz
11.5dB
7.5V
5A
-
150mA
8W
25V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
BF1108R,235
NXP

IC RF SWITCH SOT143R

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 10mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 3V
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
패키지: SOT-143R
재고3,648
-
-
-
10mA
-
-
-
3V
SOT-143R
SOT-143R
SMMBFJ309LT1G
ON Semiconductor

JFET N-CH 25V 30MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 30mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
패키지: TO-236-3, SC-59, SOT-23-3
재고2,864
-
-
-
30mA
-
-
-
25V
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
BLP05H635XRY
Ampleon USA Inc.

RF FET LDMOS 135V 27DB SOT12232

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 35W
  • Voltage - Rated: 135V
  • Package / Case: SOT-1223-2
  • Supplier Device Package: 4-HSOPF
패키지: SOT-1223-2
재고4,368
108MHz
27dB
50V
-
-
10mA
35W
135V
SOT-1223-2
4-HSOPF
PD55008L-E
STMicroelectronics

TRANSISTOR RF 5X5 POWERFLAT

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 19dB
  • Voltage - Test: 12.5V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 40V
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFLAT? (5x5)
패키지: 8-PowerVDFN
재고7,648
500MHz
19dB
12.5V
5A
-
150mA
8W
40V
8-PowerVDFN
PowerFLAT? (5x5)
BLP10H610Z
Ampleon USA Inc.

RF FET LDMOS 104V 22DB 12VDFN

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60mA
  • Power - Output: 10W
  • Voltage - Rated: 104V
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: 12-HVSON (5x6)
패키지: 12-VDFN Exposed Pad
재고15,060
860MHz
22dB
50V
-
-
60mA
10W
104V
12-VDFN Exposed Pad
12-HVSON (5x6)
PTFB183404F-V2-R250
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-37275-6

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 17dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.6 A
  • Power - Output: 80W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275-6/2
  • Supplier Device Package: H-37275-6/2
패키지: -
Request a Quote
1.88GHz
17dB
30 V
-
-
2.6 A
80W
65 V
H-37275-6/2
H-37275-6/2
STAC0912-250
STMicroelectronics

RF MOSFET LDMOS 36V STAC265B

  • Transistor Type: LDMOS
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 16.3dB
  • Voltage - Test: -
  • Current Rating: 2µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 285W
  • Voltage - Rated: 80 V
  • Package / Case: STAC265B
  • Supplier Device Package: STAC265B
패키지: -
Request a Quote
960MHz ~ 1.215GHz
16.3dB
-
2µA
-
-
285W
80 V
STAC265B
STAC265B
PTVA123501FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 50V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 350W
  • Voltage - Rated: 105 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
재고150
1.2GHz ~ 1.4GHz
17dB
50 V
-
-
150 mA
350W
105 V
H-37248-4
H-37248-4
LF2805A
MACOM Technology Solutions

RF MOSFET 28V 2L-FLG

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: -
  • Gain: 10dB
  • Voltage - Test: 28 V
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: 50 mA
  • Power - Output: 5W
  • Voltage - Rated: 65 V
  • Package / Case: 2L-FLG
  • Supplier Device Package: 2L-FLG
패키지: -
Request a Quote
-
10dB
28 V
1mA
-
50 mA
5W
65 V
2L-FLG
2L-FLG
PTFB090901FA-V2-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37265-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 650 mA
  • Power - Output: 25W
  • Voltage - Rated: 65 V
  • Package / Case: H-37265-2
  • Supplier Device Package: H-37265-2
패키지: -
Request a Quote
960MHz
19.5dB
28 V
-
-
650 mA
25W
65 V
H-37265-2
H-37265-2
BLC10G18XS-552AVTZ
Ampleon USA Inc.

RF MOSFET SOT1258

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고15
-
-
-
-
-
-
-
-
-
-
CGH27030P
MACOM Technology Solutions

RF MOSFET HEMT 28V 440196

  • Transistor Type: HEMT
  • Frequency: 2.3GHz ~ 2.9GHz
  • Gain: 14.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 30W
  • Voltage - Rated: 84 V
  • Package / Case: 440196
  • Supplier Device Package: 440196
패키지: -
재고132
2.3GHz ~ 2.9GHz
14.5dB
28 V
-
-
150 mA
30W
84 V
440196
440196
BLA9H0912LS-250U
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT502B

  • Transistor Type: LDMOS
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 22dB
  • Voltage - Test: 50 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 250W
  • Voltage - Rated: 106 V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: -
재고153
960MHz ~ 1.215GHz
22dB
50 V
1.4µA
-
100 mA
250W
106 V
SOT-502B
SOT502B
A3T19H455W23SR6
NXP

RF MOSFET LDMOS 30V ACP1230S-4

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 16.4dB
  • Voltage - Test: 30 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 540 mA
  • Power - Output: 81W
  • Voltage - Rated: 65 V
  • Package / Case: ACP-1230S-4L2S
  • Supplier Device Package: ACP-1230S-4L2S
패키지: -
Request a Quote
1.93GHz ~ 1.99GHz
16.4dB
30 V
10µA
-
540 mA
81W
65 V
ACP-1230S-4L2S
ACP-1230S-4L2S
1011GN-125EP
Microchip Technology

RF MOSFET HEMT 50V

  • Transistor Type: HEMT
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 18.75dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 150W
  • Voltage - Rated: 125 V
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
1.03GHz ~ 1.09GHz
18.75dB
50 V
-
-
60 mA
150W
125 V
Module
-