페이지 117 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  117/138
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설명
패키지
재고
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Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTRA093302DC V1
Infineon Technologies

IC RF FET LDMOS 330W H-49248H-4

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,224
-
-
-
-
-
-
-
-
-
-
BLF8G24L-200P,112
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.74A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고6,224
2.3GHz ~ 2.4GHz
17.2dB
28V
-
-
1.74A
60W
65V
SOT539A
SOT539A
BLF7G22L-160,118
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 36A
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 43W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고6,336
2.11GHz ~ 2.17GHz
18dB
28V
36A
-
1.3A
43W
65V
SOT-502A
LDMOST
BLD6G21L-50,112
Ampleon USA Inc.

RF FET LDMOS 65V 14.5DB SOT1130A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.02GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: 10.2A
  • Noise Figure: -
  • Current - Test: 170mA
  • Power - Output: 8W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1130A
  • Supplier Device Package: CDFM4
패키지: SOT-1130A
재고3,584
2.02GHz
14.5dB
28V
10.2A
-
170mA
8W
65V
SOT-1130A
CDFM4
ON5250,135
NXP

MOSFET RF SOT223 SC-73

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: TO-261-4, TO-261AA
재고7,600
-
-
-
-
-
-
-
-
TO-261-4, TO-261AA
SOT-223
hot MRFG35010R1
NXP

FET RF 15V 3.55GHZ NI360HF

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 10W
  • Voltage - Rated: 15V
  • Package / Case: NI-360HF
  • Supplier Device Package: NI-360HF
패키지: NI-360HF
재고6,060
3.55GHz
10dB
12V
-
-
180mA
10W
15V
NI-360HF
NI-360HF
BLF1043,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT538A

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 26V
  • Current Rating: 2.2A
  • Noise Figure: -
  • Current - Test: 85mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: SOT-538A
  • Supplier Device Package: 2-CDIP
패키지: SOT-538A
재고4,688
960MHz
18.5dB
26V
2.2A
-
85mA
10W
65V
SOT-538A
2-CDIP
BF1109R,215
NXP

MOSFET 2N-CH 11V 30MA SOT143R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: 20dB
  • Voltage - Test: 9V
  • Current Rating: 30mA
  • Noise Figure: 1.5dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 11V
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
패키지: SOT-143R
재고5,888
800MHz
20dB
9V
30mA
1.5dB
-
-
11V
SOT-143R
SOT-143R
BLF6G15LS-500H,112
Ampleon USA Inc.

RF FET LDMOS 100V 16DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.45Ghz ~ 1.49GHz
  • Gain: 16dB
  • Voltage - Test: 50V
  • Current Rating: 45A
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 65W
  • Voltage - Rated: 100V
  • Package / Case: SOT539B
  • Supplier Device Package: CDFM4
패키지: SOT539B
재고2,976
1.45Ghz ~ 1.49GHz
16dB
50V
45A
-
1.3A
65W
100V
SOT539B
CDFM4
SD4931
STMicroelectronics

TRANSISTOR RF MOSFET N-CH M174

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 14.8dB
  • Voltage - Test: 50V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 150W
  • Voltage - Rated: 200V
  • Package / Case: M174
  • Supplier Device Package: M174
패키지: M174
재고7,072
175MHz
14.8dB
50V
20A
-
250mA
150W
200V
M174
M174
BLF7G20LS-90P,112
Ampleon USA Inc.

RF FET LDMOS 65V 19.5DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121B
  • Supplier Device Package: CDFM4
패키지: SOT-1121B
재고6,992
1.81GHz ~ 1.88GHz
19.5dB
28V
18A
-
550mA
40W
65V
SOT-1121B
CDFM4
BLF10M6LS135U
Ampleon USA Inc.

RF FET LDMOS 65V 21DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 26.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고4,656
871.5MHz ~ 891.5MHz
21dB
28V
-
-
950mA
26.5W
65V
SOT-502B
SOT502B
BLF25M612G,118
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT975C

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: SOT-975C
  • Supplier Device Package: CDFM2
패키지: SOT-975C
재고5,248
2.45GHz
19dB
28V
-
-
10mA
12W
65V
SOT-975C
CDFM2
PD55003TR-E
STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 17dB
  • Voltage - Test: 12.5V
  • Current Rating: 2.5A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 3W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
패키지: PowerSO-10 Exposed Bottom Pad
재고6,368
500MHz
17dB
12.5V
2.5A
-
50mA
3W
40V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
UF2820P
M/A-Com Technology Solutions

MOSFET 20W 28V 100-500MHZ

  • Transistor Type: N-Channel
  • Frequency: 100MHz ~ 500MHz
  • Gain: 10dB
  • Voltage - Test: 28V
  • Current Rating: 2.8A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,024
100MHz ~ 500MHz
10dB
28V
2.8A
-
200mA
20W
65V
-
-
hot MRF6VP11KHR5
NXP

FET RF 2CH 110V 130MHZ NI-1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 130MHz
  • Gain: 26dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고5,328
130MHz
26dB
50V
-
-
150mA
1000W
110V
NI-1230
NI-1230
AFT05MP075NR1
NXP

FET RF 2CH 40V 520MHZ TO270-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 520MHz
  • Gain: 18.5dB
  • Voltage - Test: 12.5V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 70W
  • Voltage - Rated: 40V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고3,136
520MHz
18.5dB
12.5V
-
-
400mA
70W
40V
TO-270AB
TO-270 WB-4
AFT09MS015NT1
NXP

FET RF 40V 870MHZ PLD

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 17.2dB
  • Voltage - Test: 12.5V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 16W
  • Voltage - Rated: 40V
  • Package / Case: PLD-1.5W-2
  • Supplier Device Package: PLD-1.5W-2
패키지: PLD-1.5W-2
재고5,648
870MHz
17.2dB
12.5V
-
-
100mA
16W
40V
PLD-1.5W-2
PLD-1.5W-2
BLF184XRSU
Ampleon USA Inc.

RF FET LDMOS 135V 23DB SOT1214B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 23.9dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 700W
  • Voltage - Rated: 135V
  • Package / Case: SOT-1214B
  • Supplier Device Package: SOT1214B
패키지: SOT-1214B
재고6,576
108MHz
23.9dB
50V
-
-
100mA
700W
135V
SOT-1214B
SOT1214B
BLC10G18XS-301AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V DFM6

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 15.6dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 300W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
패키지: -
재고168
1.805GHz ~ 1.88GHz
15.6dB
30 V
-
-
300 mA
300W
65 V
SOT-1275-1
DFM6
78161GNP
Microchip Technology

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTVA043502EC-V1-R2
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BB504CDS-WS-E
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
GTRB266502FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 14dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 630W
  • Voltage - Rated: 48 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
패키지: -
Request a Quote
2.62GHz ~ 2.69GHz
14dB
-
-
-
-
630W
48 V
H-37248C-4
H-37248C-4
B10G3438N55DZ
Ampleon USA Inc.

RF MOSFET LDMOS 28V

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.8GHz
  • Gain: 34.2dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 75 mA
  • Power - Output: 47.5dBm
  • Voltage - Rated: 65 V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고1,125
3.4GHz ~ 3.8GHz
34.2dB
28 V
-
-
75 mA
47.5dBm
65 V
-
-
NE3517S03-T1D-A
Renesas Electronics Corporation

RF MOSFET HFET 2V S03

  • Transistor Type: HFET
  • Frequency: 20GHz
  • Gain: 13.5dB
  • Voltage - Test: 2 V
  • Current Rating: 70mA
  • Noise Figure: 0.7dB
  • Current - Test: 10 mA
  • Power - Output: -
  • Voltage - Rated: 4 V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S03
패키지: -
Request a Quote
20GHz
13.5dB
2 V
70mA
0.7dB
10 mA
-
4 V
4-SMD, Flat Leads
S03
CG2H80015D-GP4
MACOM Technology Solutions

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 8GHz
  • Gain: 17dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 15W
  • Voltage - Rated: 84 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
재고126
8GHz
17dB
28 V
-
-
-
15W
84 V
Die
Die
PXFC192207NF-V1-R500
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
-
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