페이지 39 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  39/138
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패키지
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Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
MAGX-000035-010000
M/A-Com Technology Solutions

TRANSISTOR GAN 10WCW 0.03-3.5GHZ

  • Transistor Type: HEMT
  • Frequency: 30MHz ~ 3.5GHz
  • Gain: 17.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 490mA
  • Power - Output: 40dBm
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,560
30MHz ~ 3.5GHz
17.5dB
50V
-
-
490mA
40dBm
65V
-
-
MRFE6VP6300HSR3
NXP

FET RF 2CH 130V 230MHZ NI780S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 26.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 130V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고7,744
230MHz
26.5dB
50V
-
-
100mA
300W
130V
NI-780S-4
NI-780S-4
MRF8S26120HR3
NXP

FET RF 65V 2.69GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 15.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고6,720
2.69GHz
15.6dB
28V
-
-
900mA
28W
65V
NI-780
NI-780
ON5238,118
NXP

MOSFET RF SOT426 D2PAK

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: SOT-426
패키지: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
재고2,272
-
-
-
-
-
-
-
-
TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
SOT-426
MRF7S18125AHR5
NXP

FET RF 65V 1.88GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 125W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고2,656
1.88GHz
17dB
28V
-
-
1.1A
125W
65V
NI-780
NI-780
MRFE6S9200HSR3
NXP

FET RF 66V 880MHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 58W
  • Voltage - Rated: 66V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
패키지: NI-880S
재고5,264
880MHz
21dB
28V
-
-
1.4A
58W
66V
NI-880S
NI-880S
hot MRF18090AR3
NXP

FET RF 65V 1.81GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz
  • Gain: 13.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 90W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고9,216
1.81GHz
13.5dB
26V
-
-
750mA
90W
65V
NI-880
NI-880
BF256AG
ON Semiconductor

JFET N-CH 30V 7MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 800MHz
  • Gain: 11dB
  • Voltage - Test: -
  • Current Rating: 7mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고3,664
800MHz
11dB
-
7mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot MRF5S9080NR1
NXP

FET RF 65V 960MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 80W
  • Voltage - Rated: 65V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고9,168
960MHz
18.5dB
26V
-
-
600mA
80W
65V
TO-270AB
TO-270 WB-4
NE55410GR-T3-AZ
CEL

FET RF 65V 2.14GHZ 16-HTSSOP

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: 250mA, 1A
  • Noise Figure: -
  • Current - Test: 20mA
  • Power - Output: 35.4dBm
  • Voltage - Rated: 65V
  • Package / Case: 16-DFF, Exposed Pad
  • Supplier Device Package: 16-HTSSOP
패키지: 16-DFF, Exposed Pad
재고4,912
2.14GHz
13.5dB
28V
250mA, 1A
-
20mA
35.4dBm
65V
16-DFF, Exposed Pad
16-HTSSOP
BLF4G20S-110B,112
NXP

FET RF 65V 1.99GHZ SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 100W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고2,768
1.93GHz ~ 1.99GHz
13.5dB
28V
12A
-
700mA
100W
65V
SOT-502B
SOT502B
MRF6V13250HR5
NXP

FET RF 120V 1.3GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 22.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 250W
  • Voltage - Rated: 120V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고2,240
1.3GHz
22.7dB
50V
-
-
100mA
250W
120V
NI-780
NI-780
VRF2944MP
Microsemi Corporation

MOSFET RF N-CH 170V 50A M177

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: 50A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 400W
  • Voltage - Rated: 170V
  • Package / Case: M177
  • Supplier Device Package: M177
패키지: M177
재고4,048
30MHz
25dB
50V
50A
-
250mA
400W
170V
M177
M177
BLF2425M6L180P,118
Ampleon USA Inc.

RF FET LDMOS 65V 13.3DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.45GHz
  • Gain: 13.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 180W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고3,008
2.45GHz
13.3dB
28V
-
-
10mA
180W
65V
SOT539A
SOT539A
BLF8G24LS-150GVQ
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT1244C

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244C
  • Supplier Device Package: CDFM6
패키지: SOT-1244C
재고5,120
2.3GHz ~ 2.4GHz
19dB
28V
-
-
1.3A
45W
65V
SOT-1244C
CDFM6
MMRF2005NR1
NXP

FET RF 65V 940MHZ

  • Transistor Type: LDMOS
  • Frequency: 940MHz
  • Gain: 35.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 106mA
  • Power - Output: 3.2W
  • Voltage - Rated: 65V
  • Package / Case: TO-270-16 Variant, Flat Leads
  • Supplier Device Package: TO-270 WBL-16
패키지: TO-270-16 Variant, Flat Leads
재고4,208
940MHz
35.9dB
28V
-
-
106mA
3.2W
65V
TO-270-16 Variant, Flat Leads
TO-270 WBL-16
CGHV1F025S
Cree/Wolfspeed

FET RF 100V 6GHZ 12DFN

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 16dB
  • Voltage - Test: 40V
  • Current Rating: 2A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 29W
  • Voltage - Rated: 100V
  • Package / Case: 12-VFDFN Exposed Pad
  • Supplier Device Package: 12-DFN (4x3)
패키지: 12-VFDFN Exposed Pad
재고7,312
6GHz
16dB
40V
2A
-
150mA
29W
100V
12-VFDFN Exposed Pad
12-DFN (4x3)
PD84008L-E
STMicroelectronics

FET RF 25V 870MHZ

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 15.5dB
  • Voltage - Test: 7.5V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 2W
  • Voltage - Rated: 25V
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFLAT? (5x5)
패키지: 8-PowerVDFN
재고3,632
870MHz
15.5dB
7.5V
7A
-
250mA
2W
25V
8-PowerVDFN
PowerFLAT? (5x5)
BLC9G20XS-160AVZ
Ampleon USA Inc.

RF FET LDMOS 65V 16.6DB SOT12753

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 16.6dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 200W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-3
  • Supplier Device Package: -
패키지: SOT1275-3
재고6,708
1.81GHz ~ 1.88GHz
16.6dB
30V
-
-
300mA
200W
65V
SOT1275-3
-
BLA6G1011-200R,112
Ampleon USA Inc.

RF FET LDMOS 65V 20DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: 49A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 200W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고7,824
1.03GHz ~ 1.09GHz
20dB
28V
49A
-
100mA
200W
65V
SOT-502A
LDMOST
UPA571T-T1-A
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
IGN2729M400R2
Integra Technologies Inc.

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고30
-
-
-
-
-
-
-
-
-
-
DE150-102N02A
IXYS-RF

RF MOSFET DE150

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 2A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 200W
  • Voltage - Rated: 1000 V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE150
패키지: -
Request a Quote
-
-
-
2A
-
-
200W
1000 V
6-SMD, Flat Lead Exposed Pad
DE150
BLF879PSIN
Ampleon USA Inc.

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTVA093002ND-V1-R5
MACOM Technology Solutions

RF MOSFET LDMOS HB1SOF-4

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
WP28007025
WAVEPIA.,Co.Ltd

RF MOSFET GAN HEMT 28V DIE

  • Transistor Type: GaN HEMT
  • Frequency: 7GHz
  • Gain: 17dB
  • Voltage - Test: 28 V
  • Current Rating: 800mA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 25W
  • Voltage - Rated: 28 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
재고195
7GHz
17dB
28 V
800mA
-
100 mA
25W
28 V
Die
Die
A3G26D055N-100
NXP

RF MOSFET GAN 48V 6DFN

  • Transistor Type: GaN
  • Frequency: 100MHz ~ 2.69GHz
  • Gain: 13.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40 mA
  • Power - Output: 8W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
패키지: -
재고3
100MHz ~ 2.69GHz
13.9dB
48 V
-
-
40 mA
8W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)
A3T21H360W23SR6
NXP

RF MOSFET LDMOS 28V ACP1230S-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 16.4dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 328W
  • Voltage - Rated: 65 V
  • Package / Case: ACP-1230S-4L2S
  • Supplier Device Package: ACP-1230S-4L2S
패키지: -
Request a Quote
2.11GHz ~ 2.2GHz
16.4dB
28 V
10µA
-
600 mA
328W
65 V
ACP-1230S-4L2S
ACP-1230S-4L2S