페이지 42 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Frequency	Gain	Voltage - Test	Current Rating	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
MRF7S18125AHR3	NXP	FET RF 65V 1.88GHZ NI780 Transistor Type: LDMOS Frequency: 1.88GHz Gain: 17dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.1A Power - Output: 125W Voltage - Rated: 65V Package / Case: NI-780 Supplier Device Package: NI-780	패키지: NI-780	재고5,200	1.88GHz	17dB	28V	-	-	1.1A	125W	65V	NI-780	NI-780
MRF5S4125NR1	NXP	FET RF 65V 465MHZ TO-270-4 Transistor Type: LDMOS Frequency: 465MHz Gain: 23dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.1A Power - Output: 25W Voltage - Rated: 65V Package / Case: TO-270AB Supplier Device Package: TO-270 WB-4	패키지: TO-270AB	재고3,440	465MHz	23dB	28V	-	-	1.1A	25W	65V	TO-270AB	TO-270 WB-4
MRF21030LR3	NXP	FET RF 65V 2.14GHZ NI-400 Transistor Type: LDMOS Frequency: 2.14GHz Gain: 13dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 250mA Power - Output: 30W Voltage - Rated: 65V Package / Case: NI-400 Supplier Device Package: NI-400	패키지: NI-400	재고9,180	2.14GHz	13dB	28V	-	-	250mA	30W	65V	NI-400	NI-400
MRF5S4140HR5	NXP	FET RF 65V 465MHZ NI-780 Transistor Type: LDMOS Frequency: 465MHz Gain: 21dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.25A Power - Output: 28W Voltage - Rated: 65V Package / Case: NI-780 Supplier Device Package: NI-780	패키지: NI-780	재고5,712	465MHz	21dB	28V	-	-	1.25A	28W	65V	NI-780	NI-780
BF245B_D74Z	Fairchild/ON Semiconductor	JFET N-CH 30V 15MA TO92 Transistor Type: N-Channel JFET Frequency: - Gain: - Voltage - Test: - Current Rating: 15mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 30V Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,768	-	-	-	15mA	-	-	-	30V	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BLF6G10-160RN,112	Ampleon USA Inc.	RF FET LDMOS 65V 22.5DB SOT502A Transistor Type: LDMOS Frequency: 922.5MHz ~ 957.5MHz Gain: 22.5dB Voltage - Test: 32V Current Rating: 39A Noise Figure: - Current - Test: 1.2A Power - Output: 32W Voltage - Rated: 65V Package / Case: SOT-502A Supplier Device Package: LDMOST	패키지: SOT-502A	재고3,568	922.5MHz ~ 957.5MHz	22.5dB	32V	39A	-	1.2A	32W	65V	SOT-502A	LDMOST
MMRF1007HSR5	NXP	FET RF 2CH 110V 1.03GHZ NI-1230S Transistor Type: LDMOS (Dual) Frequency: 1.03GHz Gain: 20dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 150mA Power - Output: 1000W Voltage - Rated: 110V Package / Case: NI-1230-4S Supplier Device Package: NI-1230-4S	패키지: NI-1230-4S	재고3,888	1.03GHz	20dB	50V	-	-	150mA	1000W	110V	NI-1230-4S	NI-1230-4S
BLF898U	Ampleon USA Inc.	BLF898/SOT539/TRAY Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,008	-	-	-	-	-	-	-	-	-	-
BLF888AS,112	Ampleon USA Inc.	RF FET LDMOS 110V 21DB SOT539B Transistor Type: LDMOS (Dual), Common Source Frequency: 860MHz Gain: 21dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 1.3A Power - Output: 250W Voltage - Rated: 110V Package / Case: SOT539B Supplier Device Package: SOT539B	패키지: SOT539B	재고3,488	860MHz	21dB	50V	-	-	1.3A	250W	110V	SOT539B	SOT539B
MRF8P20140WHR3	NXP	FET RF 2CH 65V 1.91GHZ NI780-4 Transistor Type: LDMOS (Dual) Frequency: 1.88GHz ~ 1.91GHz Gain: 16dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 500mA Power - Output: 24W Voltage - Rated: 65V Package / Case: NI-780-4 Supplier Device Package: NI-780-4	패키지: NI-780-4	재고4,528	1.88GHz ~ 1.91GHz	16dB	28V	-	-	500mA	24W	65V	NI-780-4	NI-780-4
BLF6H10LS-160,112	Ampleon USA Inc.	RF FET LDMOS 104V 20DB SOT467B Transistor Type: LDMOS Frequency: 952.5MHz ~ 957.5MHz Gain: 20dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 600mA Power - Output: 38W Voltage - Rated: 104V Package / Case: SOT467B Supplier Device Package: LDMOST	패키지: SOT467B	재고6,096	952.5MHz ~ 957.5MHz	20dB	50V	-	-	600mA	38W	104V	SOT467B	LDMOST
SD2941-10RW	STMicroelectronics	IC TRANS RF HF/VHF/UHF M174 Transistor Type: N-Channel Frequency: 175MHz Gain: 15.8dB Voltage - Test: 50V Current Rating: 20A Noise Figure: - Current - Test: 250mA Power - Output: 175W Voltage - Rated: 130V Package / Case: M174 Supplier Device Package: M174	패키지: M174	재고3,472	175MHz	15.8dB	50V	20A	-	250mA	175W	130V	M174	M174
PD84010TR-E	STMicroelectronics	FET RF 40V 870MHZ 10PWRSOIC Transistor Type: LDMOS Frequency: 870MHz Gain: 16.3dB Voltage - Test: 7.5V Current Rating: 8A Noise Figure: - Current - Test: 300mA Power - Output: 2W Voltage - Rated: 40V Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Supplier Device Package: PowerSO-10RF (Formed Lead)	패키지: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	재고6,352	870MHz	16.3dB	7.5V	8A	-	300mA	2W	40V	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	PowerSO-10RF (Formed Lead)
ATF-511P8-TR1	Broadcom Limited	FET RF 7V 2GHZ 8-LPCC Transistor Type: E-pHEMT Frequency: 2GHz Gain: 14.8dB Voltage - Test: 4.5V Current Rating: 1A Noise Figure: 1.4dB Current - Test: 200mA Power - Output: 30dBm Voltage - Rated: 7V Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-LPCC (2x2)	패키지: 8-WFDFN Exposed Pad	재고542,952	2GHz	14.8dB	4.5V	1A	1.4dB	200mA	30dBm	7V	8-WFDFN Exposed Pad	8-LPCC (2x2)
BLC8G27LS-60AVZ	Ampleon USA Inc.	TRANS RF 60W LDMOS DFM6F Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: SOT1275-3 Supplier Device Package: SOT1275-3	패키지: SOT1275-3	재고5,552	-	-	-	-	-	-	-	-	SOT1275-3	SOT1275-3
CGHV22100F	Cree/Wolfspeed	FET RF 125V 2.2GHZ 440162 Transistor Type: HEMT Frequency: 1.8GHz ~ 2.2GHz Gain: 20dB Voltage - Test: 50V Current Rating: 6A Noise Figure: - Current - Test: 500mA Power - Output: 100W Voltage - Rated: 125V Package / Case: 440162 Supplier Device Package: 440162	패키지: 440162	재고4,848	1.8GHz ~ 2.2GHz	20dB	50V	6A	-	500mA	100W	125V	440162	440162
275X2-501N16A-00	IXYS	RF MOSFET 2N-CHANNEL DE275 Transistor Type: 2 N-Channel (Dual) Frequency: 65MHz Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: 1180W Voltage - Rated: 500V Package / Case: 8-SMD, Flat Lead Exposed Pad Supplier Device Package: DE275	패키지: 8-SMD, Flat Lead Exposed Pad	재고7,184	65MHz	-	-	1mA	-	-	1180W	500V	8-SMD, Flat Lead Exposed Pad	DE275
BLF7G24LS-100	Ampleon USA Inc.	RF MOSFET LDMOS 28V SOT502B Transistor Type: LDMOS Frequency: 2.3GHz ~ 2.4GHz Gain: 18dB Voltage - Test: 28 V Current Rating: 5µA Noise Figure: - Current - Test: 900 mA Power - Output: 100W Voltage - Rated: 65 V Package / Case: SOT-502B Supplier Device Package: SOT502B	패키지: -	Request a Quote	2.3GHz ~ 2.4GHz	18dB	28 V	5µA	-	900 mA	100W	65 V	SOT-502B	SOT502B
SAV-331	Mini-Circuits	RF MOSFET D-PHEMT 4V MMM1362 Transistor Type: D-pHEMT Frequency: 10MHz ~ 4GHz Gain: 24.6dB Voltage - Test: 4 V Current Rating: - Noise Figure: 0.9dB Current - Test: 60 mA Power - Output: 21.1dBm Voltage - Rated: 5 V Package / Case: SC-82A, SOT-343 Supplier Device Package: MMM1362	패키지: -	재고3,804	10MHz ~ 4GHz	24.6dB	4 V	-	0.9dB	60 mA	21.1dBm	5 V	SC-82A, SOT-343	MMM1362
IGN1011L70	Integra Technologies Inc.	RF MOSFET GAN HEMT 50V PL32A2 Transistor Type: GaN HEMT Frequency: 1.03GHz ~ 1.09GHz Gain: 22dB Voltage - Test: 50 V Current Rating: - Noise Figure: - Current - Test: 22 mA Power - Output: 80W Voltage - Rated: 120 V Package / Case: PL32A2 Supplier Device Package: PL32A2	패키지: -	재고33	1.03GHz ~ 1.09GHz	22dB	50 V	-	-	22 mA	80W	120 V	PL32A2	PL32A2
BLA1011-300	Rochester Electronics, LLC	RF MOSFET LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
DE375-501N21A	IXYS-RF	RF MOSFET DE375 Transistor Type: MOSFET (Metal Oxide) Frequency: 50MHz Gain: - Voltage - Test: - Current Rating: 25A Noise Figure: - Current - Test: - Power - Output: 940W Voltage - Rated: 500 V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: DE375	패키지: -	Request a Quote	50MHz	-	-	25A	-	-	940W	500 V	6-SMD, Flat Lead Exposed Pad	DE375
BLF8G20LS-200V	Ampleon USA Inc.	RF MOSFET LDMOS 28V LDMOST Transistor Type: LDMOS Frequency: 1.8GHz ~ 2GHz Gain: 17.5dB Voltage - Test: 28 V Current Rating: 4.2µA Noise Figure: - Current - Test: 1.6 A Power - Output: 200W Voltage - Rated: 65 V Package / Case: SOT-1120B Supplier Device Package: LDMOST	패키지: -	Request a Quote	1.8GHz ~ 2GHz	17.5dB	28 V	4.2µA	-	1.6 A	200W	65 V	SOT-1120B	LDMOST
A3G22H400-04SR3	NXP	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
PXAC192908FV-V1-R0	MACOM Technology Solutions	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
PXAC243502FV-V1-R250	MACOM Technology Solutions	RF MOSFET LDMOS 28V H-37275-4 Transistor Type: LDMOS Frequency: 2.4GHz Gain: 15dB Voltage - Test: 28 V Current Rating: - Noise Figure: - Current - Test: 850 mA Power - Output: 68W Voltage - Rated: 65 V Package / Case: H-37275-4 Supplier Device Package: H-37275-4	패키지: -	Request a Quote	2.4GHz	15dB	28 V	-	-	850 mA	68W	65 V	H-37275-4	H-37275-4
A2V07H525-04NR6	NXP	RF MOSFET LDMOS 48V OM1230-4 Transistor Type: LDMOS Frequency: 595MHz ~ 851MHz Gain: 17.5dB Voltage - Test: 48 V Current Rating: 10µA Noise Figure: - Current - Test: 700 mA Power - Output: 120W Voltage - Rated: 105 V Package / Case: OM-1230-4L Supplier Device Package: OM-1230-4L	패키지: -	Request a Quote	595MHz ~ 851MHz	17.5dB	48 V	10µA	-	700 mA	120W	105 V	OM-1230-4L	OM-1230-4L
B11G2327N71DX	Ampleon USA Inc.	RF MOSFET LDMOS 28V 36QFN Transistor Type: LDMOS Frequency: 2.3GHz ~ 2.7GHz Gain: 30dB Voltage - Test: 28 V Current Rating: 1.4µA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 65 V Package / Case: 36-QFN Exposed Pad Supplier Device Package: 36-PQFN (12x7)	패키지: -	Request a Quote	2.3GHz ~ 2.7GHz	30dB	28 V	1.4µA	-	-	-	65 V	36-QFN Exposed Pad	36-PQFN (12x7)