페이지 40 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  40/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BF2030WE6814BTSA1
Infineon Technologies

MOSFET N-CH 8V 40MA SOT-343

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 23dB
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 1.5dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고3,696
800MHz
23dB
5V
40mA
1.5dB
10mA
-
8V
SC-82A, SOT-343
PG-SOT343-4
XF1001-SC-0G0T
M/A-Com Technology Solutions

TRANS HFET 1W SOT89

  • Transistor Type: HFET
  • Frequency: 6GHz
  • Gain: 15.5dB
  • Voltage - Test: 8V
  • Current Rating: 450mA
  • Noise Figure: 4.5dB
  • Current - Test: 300mA
  • Power - Output: -
  • Voltage - Rated: 9V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
패키지: TO-243AA
재고5,312
6GHz
15.5dB
8V
450mA
4.5dB
300mA
-
9V
TO-243AA
SOT-89-3
hot MRF6V2010NBR1
NXP

FET RF 110V 220MHZ TO272-2

  • Transistor Type: LDMOS
  • Frequency: 220MHz
  • Gain: 23.9dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 10W
  • Voltage - Rated: 110V
  • Package / Case: TO-272BC
  • Supplier Device Package: TO-272-2
패키지: TO-272BC
재고6,640
220MHz
23.9dB
50V
-
-
30mA
10W
110V
TO-272BC
TO-272-2
BLF6G27LS-50BN,112
NXP

TRANSISTOR RF PWR LDMOS SOT1112B

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 430mA
  • Power - Output: 3W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1112B
  • Supplier Device Package: CDFM6
패키지: SOT-1112B
재고3,568
2.5GHz ~ 2.7GHz
16.5dB
28V
12A
-
430mA
3W
65V
SOT-1112B
CDFM6
BLF7G27L-150P,112
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 37A
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고4,816
2.5GHz ~ 2.7GHz
16.5dB
28V
37A
-
1.2A
30W
65V
SOT539A
SOT539A
ON5230,127
NXP

MOSFET RF SOT226 I2PAK

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: I2PAK
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고2,016
-
-
-
-
-
-
-
-
TO-262-3 Long Leads, I2Pak, TO-262AA
I2PAK
MRF7P20040HSR5
NXP

FET RF 2CH 65V 2.03GHZ NI780HS-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.03GHz
  • Gain: 18.2dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고4,048
2.03GHz
18.2dB
32V
-
-
150mA
10W
65V
NI-780S-4
NI-780S-4
hot MRF9120LR5
NXP

FET RF 65V 880MHZ NI-860

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 16.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 120W
  • Voltage - Rated: 65V
  • Package / Case: NI-860
  • Supplier Device Package: NI-860
패키지: NI-860
재고4,592
880MHz
16.5dB
26V
-
-
1A
120W
65V
NI-860
NI-860
MRF7S19100NR1
NXP

FET RF 65V 1.99GHZ TO270-4

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 29W
  • Voltage - Rated: 65V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고3,248
1.93GHz ~ 1.99GHz
17.5dB
28V
-
-
1A
29W
65V
TO-270AB
TO-270 WB-4
MRF6S9160HR5
NXP

FET RF 68V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 35W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고6,336
880MHz
20.9dB
28V
-
-
1.2A
35W
68V
NI-780
NI-780
hot MRF5S9070NR1
NXP

FET RF 68V 880MHZ TO-270-2

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 17.8dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 14W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
패키지: TO-270AA
재고14,664
880MHz
17.8dB
26V
-
-
600mA
14W
68V
TO-270AA
TO-270-2
BF245A_D75Z
Fairchild/ON Semiconductor

JFET N-CH 30V 6.5MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 6.5mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고5,600
-
-
-
6.5mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PTRA093302FCV1R2XTMA1
Infineon Technologies

IC RF FET LDMOS 330W H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 768MHz
  • Gain: 17.25dB
  • Voltage - Test: 48V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 79W
  • Voltage - Rated: 105V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: H-37248-4
재고3,952
768MHz
17.25dB
48V
10µA
-
400mA
79W
105V
H-37248-4
H-37248-4
BLC9G15XS-400AVTZ
Ampleon USA Inc.

BLC9G15XS-400AVT/SOT1258/TRAYD

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,840
-
-
-
-
-
-
-
-
-
-
MRF8S21120HSR3
NXP

FET RF 65V 2.17GHZ NI780HS

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고5,952
2.17GHz
17.6dB
28V
-
-
850mA
28W
65V
NI-780S
NI-780S
ATF-331M4-TR2
Broadcom Limited

IC PHEMT LOW NOISE 2GHZ MINIPAK

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 15dB
  • Voltage - Test: 4V
  • Current Rating: 305mA
  • Noise Figure: 0.6dB
  • Current - Test: 60mA
  • Power - Output: 19dBm
  • Voltage - Rated: 5.5V
  • Package / Case: 0505 (1412 Metric)
  • Supplier Device Package: MiniPak 1412
패키지: 0505 (1412 Metric)
재고3,264
2GHz
15dB
4V
305mA
0.6dB
60mA
19dBm
5.5V
0505 (1412 Metric)
MiniPak 1412
MMRF1019NR4
NXP

FET RF 100V 1.09GHZ PLD-1.5

  • Transistor Type: LDMOS
  • Frequency: 1.09GHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 10W
  • Voltage - Rated: 100V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고7,888
1.09GHz
25dB
50V
-
-
10mA
10W
100V
PLD-1.5
PLD-1.5
hot MRF158
M/A-Com Technology Solutions

FET RF 65V 500MHZ 305A-01

  • Transistor Type: N-Channel
  • Frequency: 500MHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 500mA
  • Noise Figure: -
  • Current - Test: 25mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: 305A-01
  • Supplier Device Package: 305A-01, Style 2
패키지: 305A-01
재고6,976
500MHz
18dB
28V
500mA
-
25mA
2W
65V
305A-01
305A-01, Style 2
BLF6G27LS-40P,112
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121B
  • Supplier Device Package: CDFM4
패키지: SOT-1121B
재고4,176
2.5GHz ~ 2.7GHz
17.5dB
28V
-
-
450mA
12W
65V
SOT-1121B
CDFM4
BLF8G09LS-400PGWQ
Ampleon USA Inc.

RF FET LDMOS 65V 20.6DB SOT1242C

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 718.5MHz ~ 725.5MHz
  • Gain: 20.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 3.4A
  • Power - Output: 95W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1242C
  • Supplier Device Package: CDFM8
패키지: SOT-1242C
재고6,848
718.5MHz ~ 725.5MHz
20.6dB
28V
-
-
3.4A
95W
65V
SOT-1242C
CDFM8
BLF573S,112
Ampleon USA Inc.

RF FET LDMOS 110V 27.2DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 225MHz
  • Gain: 27.2dB
  • Voltage - Test: 50V
  • Current Rating: 42A
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 300W
  • Voltage - Rated: 110V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고5,328
225MHz
27.2dB
50V
42A
-
900mA
300W
110V
SOT-502B
SOT502B
BLF574XR,112
Ampleon USA Inc.

RF FET LDMOS 110V 23DB SOT1214A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 225MHz
  • Gain: 23.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 110V
  • Package / Case: SOT-1214A
  • Supplier Device Package: SOT1214A
패키지: SOT-1214A
재고7,664
225MHz
23.5dB
50V
-
-
100mA
600W
110V
SOT-1214A
SOT1214A
hot MRF148A
M/A-Com Technology Solutions

FET RF 120V 175MHZ 211-07

  • Transistor Type: N-Channel
  • Frequency: 30MHz ~ 175MHz
  • Gain: 15dB ~ 18dB
  • Voltage - Test: 50V
  • Current Rating: 6A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 30W
  • Voltage - Rated: 120V
  • Package / Case: 211-07
  • Supplier Device Package: 211-07, Style 2
패키지: 211-07
재고9,048
30MHz ~ 175MHz
15dB ~ 18dB
50V
6A
-
100mA
30W
120V
211-07
211-07, Style 2
ART700FHU
Ampleon USA Inc.

RF MOSFET LDMOS 55V SOT1214A

  • Transistor Type: LDMOS
  • Frequency: 1MHz ~ 450MHz
  • Gain: 28.6dB
  • Voltage - Test: 55 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 25 mA
  • Power - Output: 700W
  • Voltage - Rated: 177 V
  • Package / Case: SOT-1214A
  • Supplier Device Package: SOT1214A
패키지: -
Request a Quote
1MHz ~ 450MHz
28.6dB
55 V
1.4µA
-
25 mA
700W
177 V
SOT-1214A
SOT1214A
BLP0427M9S20Z
Ampleon USA Inc.

RF MOSFET LDMOS 28V SOT1482-1

  • Transistor Type: LDMOS
  • Frequency: 400MHz ~ 2.7GHz
  • Gain: 19dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 20W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1482-1
  • Supplier Device Package: SOT-1482-1
패키지: -
재고1,029
400MHz ~ 2.7GHz
19dB
28 V
1.4µA
-
100 mA
20W
65 V
SOT-1482-1
SOT-1482-1
BLF8G38LS-75V
Ampleon USA Inc.

RF MOSFET LDMOS 30V CDFM6

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.8GHz
  • Gain: 15.5dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 75W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1239B
  • Supplier Device Package: CDFM6
패키지: -
Request a Quote
3.4GHz ~ 3.8GHz
15.5dB
30 V
2.8µA
-
600 mA
75W
65 V
SOT-1239B
CDFM6
WS1A2639-V1-R1
MACOM Technology Solutions

RF MOSFET GAN 48V 20LGA

  • Transistor Type: GaN
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 16.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50 mA
  • Power - Output: 8W
  • Voltage - Rated: 125 V
  • Package / Case: 20-TFLGA Exposed Pad
  • Supplier Device Package: 20-LGA (6x6)
패키지: -
Request a Quote
2.496GHz ~ 2.69GHz
16.9dB
48 V
-
-
50 mA
8W
125 V
20-TFLGA Exposed Pad
20-LGA (6x6)
MWT-PH31F
CML Microcircuits

RF MOSFET PHEMT FET 2V CHIP

  • Transistor Type: pHEMT FET
  • Frequency: 18GHz
  • Gain: 13dB
  • Voltage - Test: 2 V
  • Current Rating: 280mA
  • Noise Figure: -
  • Current - Test: 1 mA
  • Power - Output: 30dBm
  • Voltage - Rated: -
  • Package / Case: Die
  • Supplier Device Package: Chip
패키지: -
재고300
18GHz
13dB
2 V
280mA
-
1 mA
30dBm
-
Die
Chip