페이지 44 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  44/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTRA093302DC V1 R250
Infineon Technologies

IC RF FET LDMOS 330W H-49248H-4

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,440
-
-
-
-
-
-
-
-
-
-
PXAC261212FCV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 280mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: H-37248-4
재고2,112
2.69GHz
15dB
28V
-
-
280mA
28W
65V
H-37248-4
H-37248-4
MRF8S9220HR3
NXP

FET RF 70V 960MHZ NI780H

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 65W
  • Voltage - Rated: 70V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고2,400
960MHz
19.4dB
28V
-
-
1.6A
65W
70V
NI-780
NI-780
ON5520,215
NXP

MOSFET RF SOT23 TO-236AB

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고6,112
-
-
-
-
-
-
-
-
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
MRF7S21150HR5
NXP

FET RF 65V 2.17GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.35A
  • Power - Output: 44W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고7,264
2.11GHz ~ 2.17GHz
17.5dB
28V
-
-
1.35A
44W
65V
NI-780
NI-780
hot BF256A
ON Semiconductor

JFET N-CH 30V 7MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 800MHz
  • Gain: 11dB
  • Voltage - Test: -
  • Current Rating: 7mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고29,880
800MHz
11dB
-
7mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MRF5S21045NR1
NXP

FET RF 68V 2.12GHZ TO270-4

  • Transistor Type: LDMOS
  • Frequency: 2.12GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 10W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고5,264
2.12GHz
14.5dB
28V
-
-
500mA
10W
68V
TO-270AB
TO-270 WB-4
J309
Fairchild/ON Semiconductor

JFET N-CH 25V 30MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 450MHz
  • Gain: 12dB
  • Voltage - Test: 10V
  • Current Rating: 30mA
  • Noise Figure: 3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고7,280
450MHz
12dB
10V
30mA
3dB
10mA
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PN4416
Fairchild/ON Semiconductor

JFET N-CH 30V TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 400MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: 4dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고7,856
400MHz
-
-
-
4dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2N3819_D74Z
Fairchild/ON Semiconductor

JFET N-CH 25V 50MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 50mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고3,104
-
-
-
50mA
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PTFA041501FV4R250XTMA1
Infineon Technologies

FET RF LDMOS 150W H37248-2

  • Transistor Type: LDMOS
  • Frequency: 470MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고6,768
470MHz
21dB
28V
-
-
900mA
150W
65V
2-Flatpack, Fin Leads, Flanged
H-37248-2
PTFB211503ELV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: H-33288-6
  • Supplier Device Package: H-33288-6
패키지: H-33288-6
재고6,592
2.17GHz
18dB
30V
-
-
1.2A
32W
65V
H-33288-6
H-33288-6
BLF8G22LS-200GVJ
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT1244C

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244C
  • Supplier Device Package: CDFM6
패키지: SOT-1244C
재고7,376
2.11GHz ~ 2.17GHz
19dB
28V
-
-
2A
55W
65V
SOT-1244C
CDFM6
ARF465BG
Microsemi Corporation

RF PWR MOSFET 1200V 6A TO-247

  • Transistor Type: N-Channel
  • Frequency: 40.68MHz
  • Gain: 15dB
  • Voltage - Test: 300V
  • Current Rating: 6A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 150W
  • Voltage - Rated: 1200V
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고3,344
40.68MHz
15dB
300V
6A
-
-
150W
1200V
TO-247-3
TO-247
BLP10H603AZ
Ampleon USA Inc.

RF FET LDMOS 104V 22DB 12VDFN

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 22.8dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 15mA
  • Power - Output: 2.5W
  • Voltage - Rated: 104V
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: 12-HVSON (5x6)
패키지: 12-VDFN Exposed Pad
재고4,000
860MHz
22.8dB
50V
-
-
15mA
2.5W
104V
12-VDFN Exposed Pad
12-HVSON (5x6)
MMRF1317HR5
NXP

TRANS 1030MHZ 1550W PEAK 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.03GHz
  • Gain: 18.2dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1300W
  • Voltage - Rated: 105V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고6,064
1.03GHz
18.2dB
50V
-
-
100mA
1300W
105V
SOT-979A
NI-1230-4H
MRF6V2150NBR1
NXP

FET RF 110V 220MHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 220MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 150W
  • Voltage - Rated: 110V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272BB
재고4,640
220MHz
25dB
50V
-
-
450mA
150W
110V
TO-272BB
TO-272 WB-4
BF861B,215
NXP

JFET N-CH 25V 15MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고83,178
-
-
-
15mA
-
-
-
25V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
SD2941-10W
STMicroelectronics

IC TRANS RF HF/VHF/UHF M174

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 15.8dB
  • Voltage - Test: 50V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 175W
  • Voltage - Rated: 130V
  • Package / Case: M174
  • Supplier Device Package: M174
패키지: M174
재고9,480
175MHz
15.8dB
50V
20A
-
250mA
175W
130V
M174
M174
BLC9G22XS-120AGWTY
Ampleon USA Inc.

RF MOSFET LDMOS SOT1278-1

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 17.1dB
  • Voltage - Test: -
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 120W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1278-1
  • Supplier Device Package: SOT1278-1
패키지: -
Request a Quote
2.11GHz ~ 2.2GHz
17.1dB
-
1.4µA
-
-
120W
65 V
SOT-1278-1
SOT1278-1
VRF141MP
Microchip Technology

RF MOSFET 28V M174

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 175MHz
  • Gain: 23dB
  • Voltage - Test: 28 V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 4 A
  • Power - Output: 150W
  • Voltage - Rated: 80 V
  • Package / Case: SOT-123A
  • Supplier Device Package: M174
패키지: -
Request a Quote
175MHz
23dB
28 V
20A
-
4 A
150W
80 V
SOT-123A
M174
CE7613M4-C2
CEL

RF MOSFET 2V 4MINIMOLD

  • Transistor Type: -
  • Frequency: 12GHz
  • Gain: 14.1dB
  • Voltage - Test: 2 V
  • Current Rating: 31.9mA
  • Noise Figure: 0.35dB
  • Current - Test: 10 mA
  • Power - Output: -
  • Voltage - Rated: 4 V
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-Super Mini Mold
패키지: -
Request a Quote
12GHz
14.1dB
2 V
31.9mA
0.35dB
10 mA
-
4 V
SOT-343F
4-Super Mini Mold
3SK323UG-TL-E
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
NPT35015D
MACOM Technology Solutions

RF MOSFET HEMT 28V 8SOIC

  • Transistor Type: HEMT
  • Frequency: 3.3GHz ~ 3.8GHz
  • Gain: 10.5dB
  • Voltage - Test: 28 V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 1.7W
  • Voltage - Rated: 100 V
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: -
Request a Quote
3.3GHz ~ 3.8GHz
10.5dB
28 V
5A
-
200 mA
1.7W
100 V
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
BLP5LA55SGZ
Ampleon USA Inc.

RF MOSFET LDMOS 15V TO270

  • Transistor Type: LDMOS
  • Frequency: 520MHz
  • Gain: 19.6dB
  • Voltage - Test: 15 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 893 mA
  • Power - Output: 55W
  • Voltage - Rated: 30 V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2F-1
패키지: -
Request a Quote
520MHz
19.6dB
15 V
1.4µA
-
893 mA
55W
30 V
TO-270AA
TO-270-2F-1
DU2880U
MACOM Technology Solutions

RF MOSFET 28V

  • Transistor Type: -
  • Frequency: 2MHz ~ 175MHz
  • Gain: 13dB
  • Voltage - Test: 28 V
  • Current Rating: 4mA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 80W
  • Voltage - Rated: 65 V
  • Package / Case: 4L-FLG
  • Supplier Device Package: -
패키지: -
Request a Quote
2MHz ~ 175MHz
13dB
28 V
4mA
-
400 mA
80W
65 V
4L-FLG
-
BLL9G1214L-600U
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 19dB
  • Voltage - Test: 32 V
  • Current Rating: 5µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 600W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502A
패키지: -
Request a Quote
1.2GHz ~ 1.4GHz
19dB
32 V
5µA
-
400 mA
600W
65 V
SOT-502A
SOT502A
MRF101AN-START
NXP

RF MOSFET LDMOS 50V TO220-3

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 250MHz
  • Gain: 21.1dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 115W
  • Voltage - Rated: 133 V
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: -
Request a Quote
1.8MHz ~ 250MHz
21.1dB
50 V
10µA
-
100 mA
115W
133 V
TO-220-3
TO-220-3