페이지 45 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  45/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
MRF8S21140HSR5
NXP

FET RF 65V 2.14GHZ NI780S

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 17.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 970mA
  • Power - Output: 34W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고3,264
2.14GHz
17.9dB
28V
-
-
970mA
34W
65V
NI-780S
NI-780S
MRFG35003MT1
NXP

FET RF 15V 3.55GHZ 1.5-PLD

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 11.5dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 55mA
  • Power - Output: 3W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고3,216
3.55GHz
11.5dB
12V
-
-
55mA
3W
15V
PLD-1.5
PLD-1.5
MRF5S21150HR3
NXP

FET RF 65V 2.17GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 12.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 33W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고3,872
2.11GHz ~ 2.17GHz
12.5dB
28V
-
-
1.3A
33W
65V
NI-880
NI-880
MRF5S21100HR3
NXP

FET RF 65V 2.17GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.16GHz ~ 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.05A
  • Power - Output: 23W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고7,472
2.16GHz ~ 2.17GHz
13.5dB
28V
-
-
1.05A
23W
65V
NI-780
NI-780
NE651R479A-T1-A
CEL

FET RF 8V 1.9GHZ 79A

  • Transistor Type: HFET
  • Frequency: 1.9GHz
  • Gain: 12dB
  • Voltage - Test: 3.5V
  • Current Rating: 1A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 27dBm
  • Voltage - Rated: 8V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
패키지: 4-SMD, Flat Leads
재고5,056
1.9GHz
12dB
3.5V
1A
-
50mA
27dBm
8V
4-SMD, Flat Leads
79A
hot NE3508M04-T2-A
CEL

FET RF 4V 2GHZ 4-TSMM

  • Transistor Type: HFET
  • Frequency: 2GHz
  • Gain: 14dB
  • Voltage - Test: 2V
  • Current Rating: 120mA
  • Noise Figure: 0.45dB
  • Current - Test: 10mA
  • Power - Output: 18dBm
  • Voltage - Rated: 4V
  • Package / Case: SOT-343F
  • Supplier Device Package: F4TSMM, M04
패키지: SOT-343F
재고236,124
2GHz
14dB
2V
120mA
0.45dB
10mA
18dBm
4V
SOT-343F
F4TSMM, M04
BF991,215
NXP

MOSFET NCH DUAL GATE 20V SOT143B

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 100MHz
  • Gain: 29dB
  • Voltage - Test: 10V
  • Current Rating: 20mA
  • Noise Figure: 0.7dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고7,808
100MHz
29dB
10V
20mA
0.7dB
10mA
-
20V
TO-253-4, TO-253AA
SOT-143B
MMRF1024HSR5
NXP

FET RF 2CH 65V 2.5GHZ NI-1230-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.5GHz
  • Gain: 14.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
패키지: NI-1230-4LS2L
재고5,728
2.5GHz
14.1dB
28V
-
-
700mA
50W
65V
NI-1230-4LS2L
NI-1230-4LS2L
PD57070S-E
STMicroelectronics

FET RF 65V 945MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 14.7dB
  • Voltage - Test: 28V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 70W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
패키지: PowerSO-10 Exposed Bottom Pad
재고4,496
945MHz
14.7dB
28V
7A
-
250mA
70W
65V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
A2I20H060GNR1
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.84GHz
  • Gain: 28.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 24mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: TO-270-14 Variant, Gull Wing
  • Supplier Device Package: TO-270WBG-15
패키지: TO-270-14 Variant, Gull Wing
재고4,272
1.84GHz
28.9dB
28V
-
-
24mA
12W
65V
TO-270-14 Variant, Gull Wing
TO-270WBG-15
MRF6S20010NR1
NXP

FET RF 68V 2.17GHZ TO270-2

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 10W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
패키지: TO-270AA
재고6,608
2.17GHz
15.5dB
28V
-
-
130mA
10W
68V
TO-270AA
TO-270-2
hot ATF-33143-TR1G
Broadcom Limited

FET RF 5.5V 2GHZ SOT-343

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 15dB
  • Voltage - Test: 4V
  • Current Rating: 305mA
  • Noise Figure: 0.5dB
  • Current - Test: 80mA
  • Power - Output: 22dBm
  • Voltage - Rated: 5.5V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
패키지: SC-82A, SOT-343
재고629,520
2GHz
15dB
4V
305mA
0.5dB
80mA
22dBm
5.5V
SC-82A, SOT-343
SOT-343
CLF1G0035S-50,112
Ampleon USA Inc.

RF FET HEMT 150V 11.5DB SOT467B

  • Transistor Type: HEMT
  • Frequency: 3GHz
  • Gain: 11.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 50W
  • Voltage - Rated: 150V
  • Package / Case: SOT467B
  • Supplier Device Package: SOT467B
패키지: SOT467B
재고6,016
3GHz
11.5dB
50V
-
-
150mA
50W
150V
SOT467B
SOT467B
IXZR18N50A-00
IXYS

RF MOSFET N-CHANNEL PLUS247-3

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 350W
  • Voltage - Rated: 500V
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고6,792
-
-
-
1mA
-
-
350W
500V
TO-247-3
PLUS247?-3
AFT05MS006NT1
NXP

FET RF 30V 520MHZ PLD

  • Transistor Type: LDMOS
  • Frequency: 520MHz
  • Gain: 18.3dB
  • Voltage - Test: 7.5V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 6W
  • Voltage - Rated: 30V
  • Package / Case: PLD-1.5W-2
  • Supplier Device Package: PLD-1.5W-2
패키지: PLD-1.5W-2
재고3,408
520MHz
18.3dB
7.5V
-
-
100mA
6W
30V
PLD-1.5W-2
PLD-1.5W-2
BLC2425M8LS300PZ
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT12501

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.45GHz
  • Gain: 17.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 20mA
  • Power - Output: 300W
  • Voltage - Rated: 65V
  • Package / Case: SOT1250-1
  • Supplier Device Package: SOT1250-1
패키지: SOT1250-1
재고7,168
2.45GHz
17.5dB
32V
-
-
20mA
300W
65V
SOT1250-1
SOT1250-1
BLC9G20XS-400AVTZ
Ampleon USA Inc.

RF FET LDMOS 65V 16.2DB SOT12587

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 16.2dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 570W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1258-7
  • Supplier Device Package: -
패키지: SOT-1258-7
재고6,112
1.81GHz ~ 1.88GHz
16.2dB
32V
-
-
800mA
570W
65V
SOT-1258-7
-
IXZR08N120
IXYS

RF MOSFET N-CHANNEL PLUS247-3

  • Transistor Type: N-Channel
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 250W
  • Voltage - Rated: 1200V
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고6,012
100MHz
-
-
1mA
-
-
250W
1200V
TO-247-3
PLUS247?-3
hot 2SK3557-7-TB-E
ON Semiconductor

JFET N-CH 15V 50MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: 1kHz
  • Gain: -
  • Voltage - Test: 5V
  • Current Rating: 50mA
  • Noise Figure: 1dB
  • Current - Test: 1mA
  • Power - Output: -
  • Voltage - Rated: 15V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
패키지: TO-236-3, SC-59, SOT-23-3
재고76,968
1kHz
-
5V
50mA
1dB
1mA
-
15V
TO-236-3, SC-59, SOT-23-3
3-CP
hot ATF-54143-TR1G
Broadcom Limited

FET RF 5V 2GHZ SOT-343

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 16.6dB
  • Voltage - Test: 3V
  • Current Rating: 120mA
  • Noise Figure: 0.5dB
  • Current - Test: 60mA
  • Power - Output: 20.4dBm
  • Voltage - Rated: 5V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
패키지: SC-82A, SOT-343
재고1,561,968
2GHz
16.6dB
3V
120mA
0.5dB
60mA
20.4dBm
5V
SC-82A, SOT-343
SOT-343
MRF13750HSR5
NXP

RF MOSFET LDMOS 50V NI1230

  • Transistor Type: LDMOS
  • Frequency: 700MHz ~ 1.3GHz
  • Gain: 20.4dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 750W
  • Voltage - Rated: 105 V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
패키지: -
Request a Quote
700MHz ~ 1.3GHz
20.4dB
50 V
10µA
-
200 mA
750W
105 V
NI-1230-4S
NI-1230-4S
BLC2425M10LS250Z
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1270-1

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz ~ 2.5GHz
  • Gain: 14.4dB
  • Voltage - Test: 32 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 250W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1270-1
  • Supplier Device Package: SOT-1270-1
패키지: -
Request a Quote
2.4GHz ~ 2.5GHz
14.4dB
32 V
2.8µA
-
100 mA
250W
65 V
SOT-1270-1
SOT-1270-1
WAS110M12BM2
MACOM Technology Solutions

RF MOSFET 1200V

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
RF5L05750CF2
STMicroelectronics

RF MOSFET LDMOS C2

  • Transistor Type: LDMOS
  • Frequency: 1.5GHz
  • Gain: 20dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 2500W
  • Voltage - Rated: 50 V
  • Package / Case: C2
  • Supplier Device Package: C2
패키지: -
Request a Quote
1.5GHz
20dB
-
-
-
-
2500W
50 V
C2
C2
A2T20H330W24NR6
NXP

RF MOSFET LDMOS 28V OM1230-42

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz ~ 2.025GHz
  • Gain: 15.9dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 700 mA
  • Power - Output: 229W
  • Voltage - Rated: 65 V
  • Package / Case: OM-1230-4L2L
  • Supplier Device Package: OM-1230-4L2L
패키지: -
Request a Quote
1.88GHz ~ 2.025GHz
15.9dB
28 V
10µA
-
700 mA
229W
65 V
OM-1230-4L2L
OM-1230-4L2L
CGH21240F
MACOM Technology Solutions

RF MOSFET HEMT 28V 440117

  • Transistor Type: HEMT
  • Frequency: 1.8GHz ~ 2.3GHz
  • Gain: 15dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1 A
  • Power - Output: 240W
  • Voltage - Rated: 84 V
  • Package / Case: 440117
  • Supplier Device Package: 440117
패키지: -
Request a Quote
1.8GHz ~ 2.3GHz
15dB
28 V
-
-
1 A
240W
84 V
440117
440117
A3T21H400W23SR6
NXP

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTFA041501E-V4-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-36248-2

  • Transistor Type: LDMOS
  • Frequency: 420MHz ~ 500MHz
  • Gain: 21dB
  • Voltage - Test: 28 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 900 mA
  • Power - Output: 150W
  • Voltage - Rated: 65 V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
패키지: -
Request a Quote
420MHz ~ 500MHz
21dB
28 V
1µA
-
900 mA
150W
65 V
2-Flatpack, Fin Leads
H-36248-2