페이지 75 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  75/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA261702E V1
Infineon Technologies

IC FET RF LDMOS 170W H-30275-4

  • Transistor Type: LDMOS
  • Frequency: 2.66GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 170W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-30275-4
패키지: 2-Flatpack, Fin Leads
재고5,184
2.66GHz
15dB
28V
10µA
-
1.8A
170W
65V
2-Flatpack, Fin Leads
H-30275-4
BLF6G27LS-40PHJ
Ampleon USA Inc.

RF FET LDMOS 65V 17DB

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: -
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,440
2.5GHz ~ 2.7GHz
17.5dB
28V
-
-
450mA
-
65V
-
-
hot MRF9080LR5
NXP

FET RF 65V 960MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 70W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고8,748
960MHz
18.5dB
26V
-
-
600mA
70W
65V
NI-780
NI-780
MRF6S19140HR3
NXP

FET RF 68V 1.99GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.15A
  • Power - Output: 29W
  • Voltage - Rated: 68V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고2,544
1.93GHz ~ 1.99GHz
16dB
28V
-
-
1.15A
29W
68V
NI-880
NI-880
NE6510179A-A
CEL

FET RF 8V 1.9GHZ 79A

  • Transistor Type: HFET
  • Frequency: 1.9GHz
  • Gain: 10dB
  • Voltage - Test: 3.5V
  • Current Rating: 2.8A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 32.5dBm
  • Voltage - Rated: 8V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
패키지: 4-SMD, Flat Leads
재고3,376
1.9GHz
10dB
3.5V
2.8A
-
200mA
32.5dBm
8V
4-SMD, Flat Leads
79A
BF904WR,115
NXP

MOSFET N-CH 7V 30MA SOT343

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 200MHz
  • Gain: -
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 1dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
패키지: SC-82A, SOT-343
재고5,344
200MHz
-
5V
30mA
1dB
10mA
-
7V
SC-82A, SOT-343
CMPAK-4
PTFA220081MV4XUMA1
Infineon Technologies

FET RF LDMOS 8W SON10

  • Transistor Type: LDMOS
  • Frequency: 940MHz
  • Gain: 20.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 8W
  • Voltage - Rated: 65V
  • Package / Case: 10-LDFN Exposed Pad
  • Supplier Device Package: PG-SON-10
패키지: 10-LDFN Exposed Pad
재고2,752
940MHz
20.7dB
28V
-
-
100mA
8W
65V
10-LDFN Exposed Pad
PG-SON-10
VRF154FLMP
Microsemi Corporation

RF MOSFET N-CHANNEL 50V 4SMD

  • Transistor Type: N-Channel
  • Frequency: 80MHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: 4mA
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 600W
  • Voltage - Rated: 170V
  • Package / Case: 4-SMD
  • Supplier Device Package: -
패키지: 4-SMD
재고7,456
80MHz
17dB
50V
4mA
-
800mA
600W
170V
4-SMD
-
NPT35050AB
M/A-Com Technology Solutions

HEMT N-CH 28V 65W 3300-3800MHZ

  • Transistor Type: HEMT
  • Frequency: 3.3GHz ~ 3.8GHz
  • Gain: 12dB
  • Voltage - Test: 28V
  • Current Rating: 19.5A
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 6W
  • Voltage - Rated: 100V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,144
3.3GHz ~ 3.8GHz
12dB
28V
19.5A
-
750mA
6W
100V
-
-
BLF8G10LS-160,112
Ampleon USA Inc.

RF FET LDMOS 65V 19.7DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 19.7dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 35W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고7,104
920MHz ~ 960MHz
19.7dB
30V
-
-
1.1A
35W
65V
SOT-502B
SOT502B
BLC9G27LS-151AVY
Ampleon USA Inc.

RF FET LDMOS 65V 15.6DB SOT12753

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.69GHz
  • Gain: 15.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 280mA
  • Power - Output: 155W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-3
  • Supplier Device Package: SOT1275-3
패키지: SOT1275-3
재고3,824
2.5GHz ~ 2.69GHz
15.6dB
28V
-
-
280mA
155W
65V
SOT1275-3
SOT1275-3
hot MRFE6S9046GNR1
NXP

FET RF 66V 960MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 35.5W
  • Voltage - Rated: 66V
  • Package / Case: TO-270BB
  • Supplier Device Package: TO-270 WB-4 Gull
패키지: TO-270BB
재고9,516
960MHz
19dB
28V
-
-
300mA
35.5W
66V
TO-270BB
TO-270 WB-4 Gull
MW7IC2020NT1
NXP

FET RF 65V 2.14GHZ 24PQFN

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 32.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40mA
  • Power - Output: 2.4W
  • Voltage - Rated: 65V
  • Package / Case: 24-PowerQFN
  • Supplier Device Package: 24-PQFN (8x8)
패키지: 24-PowerQFN
재고7,520
2.14GHz
32.6dB
28V
-
-
40mA
2.4W
65V
24-PowerQFN
24-PQFN (8x8)
BLF6G38S-25,112
Ampleon USA Inc.

RF FET LDMOS 65V 15DB SOT608B

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 8.2A
  • Noise Figure: -
  • Current - Test: 225mA
  • Power - Output: 4.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608B
  • Supplier Device Package: CDFM2
패키지: SOT-608B
재고7,488
3.4GHz ~ 3.6GHz
15dB
28V
8.2A
-
225mA
4.5W
65V
SOT-608B
CDFM2
BF545B,215
NXP

JFET N-CH 30V 15MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고7,232
-
-
-
15mA
-
-
-
30V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
CGHV50200F
Cree/Wolfspeed

200-W 4400-5000-MHZ 50-OHM I

  • Transistor Type: HEMT
  • Frequency: 5GHz
  • Gain: 11.8dB
  • Voltage - Test: 40V
  • Current Rating: 17A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 200W
  • Voltage - Rated: 125V
  • Package / Case: 440217
  • Supplier Device Package: 440217
패키지: 440217
재고4,144
5GHz
11.8dB
40V
17A
-
1A
200W
125V
440217
440217
PTVA102001EA-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 50V H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz ~ 1.6GHz
  • Gain: 18.5dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 200W
  • Voltage - Rated: 105 V
  • Package / Case: H-36265-2
  • Supplier Device Package: H-36265-2
패키지: -
재고105
960MHz ~ 1.6GHz
18.5dB
50 V
10µA
-
100 mA
200W
105 V
H-36265-2
H-36265-2
BLC10G18XS-600AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 15.4dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 800 mA
  • Power - Output: 600W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
패키지: -
재고87
1.805GHz ~ 1.88GHz
15.4dB
30 V
2.8µA
-
800 mA
600W
65 V
SOT-1258-4
SOT1258-4
IRFAE32
International Rectifier

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PXAC261212FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 15dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 280 mA
  • Power - Output: 28W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
2.69GHz
15dB
28 V
-
-
280 mA
28W
65 V
H-37248-4
H-37248-4
BLP0427M9S20GZ
Ampleon USA Inc.

RF MOSFET LDMOS 28V SOT1483-1

  • Transistor Type: LDMOS
  • Frequency: 400MHz ~ 2.7GHz
  • Gain: 19dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 20W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1483-1
  • Supplier Device Package: SOT1483-1
패키지: -
Request a Quote
400MHz ~ 2.7GHz
19dB
28 V
1.4µA
-
100 mA
20W
65 V
SOT-1483-1
SOT1483-1
PTFB072707FH-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
B11G3338N80DYZ
Ampleon USA Inc.

RF MOSFET LDMOS 36QFN

  • Transistor Type: LDMOS
  • Frequency: 3.3GHz ~ 3.8GHz
  • Gain: 38dB
  • Voltage - Test: -
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 65 V
  • Package / Case: 36-QFN Exposed Pad
  • Supplier Device Package: 36-PQFN (12x7)
패키지: -
Request a Quote
3.3GHz ~ 3.8GHz
38dB
-
1.4µA
-
-
-
65 V
36-QFN Exposed Pad
36-PQFN (12x7)
MHT2025NR1
NXP

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLC10G22XS-400AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 28V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 17dB
  • Voltage - Test: 28 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 800 mA
  • Power - Output: 400W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
패키지: -
재고144
2.11GHz ~ 2.2GHz
17dB
28 V
2.8µA
-
800 mA
400W
65 V
SOT-1258-4
SOT1258-4
0912GN-15EP
Microchip Technology

RF MOSFET GAN 50V

  • Transistor Type: GaN
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 18.1dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10 mA
  • Power - Output: 19W
  • Voltage - Rated: 150 V
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
960MHz ~ 1.215GHz
18.1dB
50 V
-
-
10 mA
19W
150 V
Module
-
GTVA311801FA-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 50V H-37265J-2

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 15dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 20 mA
  • Power - Output: 180W
  • Voltage - Rated: 125 V
  • Package / Case: H-37265J-2
  • Supplier Device Package: H-37265J-2
패키지: -
재고144
2.7GHz ~ 3.1GHz
15dB
50 V
-
-
20 mA
180W
125 V
H-37265J-2
H-37265J-2
MDSGN-750ELMV
Microchip Technology

RF MOSFET HEMT 50V 55-KR

  • Transistor Type: HEMT
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 19.1dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 800W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
패키지: -
Request a Quote
1.03GHz ~ 1.09GHz
19.1dB
50 V
-
-
100 mA
800W
150 V
55-KR
55-KR