페이지 77 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  77/138
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제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BG3123RE6327HTSA1
Infineon Technologies

MOSFET N-CH DUAL 8V SOT-363

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 800MHz
  • Gain: 25dB
  • Voltage - Test: 5V
  • Current Rating: 25mA, 20mA
  • Noise Figure: 1.8dB
  • Current - Test: 14mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고3,376
800MHz
25dB
5V
25mA, 20mA
1.8dB
14mA
-
8V
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BLF8G24L-200P,118
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.74A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고3,392
2.3GHz ~ 2.4GHz
17.2dB
28V
-
-
1.74A
60W
65V
SOT539A
SOT539A
ON5441,518
NXP

MOSFET RF 20SOIC

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,504
-
-
-
-
-
-
-
-
-
-
BLF6G10LS-135R,118
Ampleon USA Inc.

RF FET LDMOS 65V 21DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: 32A
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 26.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고5,648
871.5MHz ~ 891.5MHz
21dB
28V
32A
-
950mA
26.5W
65V
SOT-502B
SOT502B
MRF7S38010HR5
NXP

FET RF 65V 3.6GHZ NI-400

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 15dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 160mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: NI-400-240
  • Supplier Device Package: NI-400-240
패키지: NI-400-240
재고6,160
3.4GHz ~ 3.6GHz
15dB
30V
-
-
160mA
2W
65V
NI-400-240
NI-400-240
MRF6S24140HSR5
NXP

FET RF 68V 2.39GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 2.39GHz
  • Gain: 15.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 28W
  • Voltage - Rated: 68V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
패키지: NI-880S
재고6,624
2.39GHz
15.2dB
28V
-
-
1.3A
28W
68V
NI-880S
NI-880S
MRF6S9045NR1
NXP

FET RF 68V 880MHZ TO-270-2

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 22.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 10W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
패키지: TO-270AA
재고3,856
880MHz
22.7dB
28V
-
-
350mA
10W
68V
TO-270AA
TO-270-2
BF245C_D75Z
Fairchild/ON Semiconductor

JFET N-CH 30V 25MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고3,856
-
-
-
25mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BF1201WR,135
NXP

MOSFET 2N-CH 10V 30MA SOT343R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 29dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 1dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 10V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
패키지: SC-82A, SOT-343
재고6,080
400MHz
29dB
5V
30mA
1dB
15mA
-
10V
SC-82A, SOT-343
CMPAK-4
BLF189XRBSU
Ampleon USA Inc.

BLF189XRBS/SOT539/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,264
-
-
-
-
-
-
-
-
-
-
MRFE6VP5600HSR5
NXP

FET RF 2CH 130V 230MHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 130V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고6,928
230MHz
25dB
50V
-
-
100mA
600W
130V
NI-1230S
NI-1230S
BLF8G22LS-240J
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고7,712
2.11GHz ~ 2.17GHz
19dB
28V
-
-
2A
55W
65V
SOT-502B
SOT502B
MMRF1318NR1
NXP

FET RF 110V 450MHZ

  • Transistor Type: LDMOS
  • Frequency: 450MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 300W
  • Voltage - Rated: 110V
  • Package / Case: TO-270-4
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270-4
재고2,336
450MHz
22dB
50V
-
-
900mA
300W
110V
TO-270-4
TO-270 WB-4
BLF2425M9LS30J
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT1135B

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 18.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 20mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1135B
  • Supplier Device Package: SOT1135B
패키지: SOT-1135B
재고6,128
2.45GHz
18.5dB
32V
-
-
20mA
30W
65V
SOT-1135B
SOT1135B
BLM8G0710S-60PBGY
Ampleon USA Inc.

RF FET LDMOS 65V 36.2DB SOT12122

  • Transistor Type: LDMOS (Dual)
  • Frequency: 957.5MHz
  • Gain: 36.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60mA
  • Power - Output: 6W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1211-2
  • Supplier Device Package: 16-HSOP
패키지: SOT-1211-2
재고6,352
957.5MHz
36.2dB
28V
-
-
60mA
6W
65V
SOT-1211-2
16-HSOP
PD57070-E
STMicroelectronics

FET RF 65V 945MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 14.7dB
  • Voltage - Test: 28V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 70W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
패키지: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
재고4,464
945MHz
14.7dB
28V
7A
-
250mA
70W
65V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
IXZR08N120A-00
IXYS

RF MOSFET N-CHANNEL PLUS247-3

  • Transistor Type: N-Channel
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 250W
  • Voltage - Rated: 1200V
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고6,072
100MHz
-
-
1mA
-
-
250W
1200V
TO-247-3
PLUS247?-3
CGHV14500F
Cree/Wolfspeed

FET RF 125V 1.4GHZ 440117

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: 36A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 500W
  • Voltage - Rated: 125V
  • Package / Case: 440117
  • Supplier Device Package: 440117
패키지: 440117
재고7,424
1.2GHz ~ 1.4GHz
17dB
50V
36A
-
500mA
500W
125V
440117
440117
CGH40120F
Cree/Wolfspeed

FET RF 84V 4GHZ 440193

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 4GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 120W
  • Voltage - Rated: 84V
  • Package / Case: 440193
  • Supplier Device Package: 440193
패키지: 440193
재고13,956
0Hz ~ 4GHz
19dB
28V
28A
-
1A
120W
84V
440193
440193
GTVA263202FC-V1-R2
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248-4

  • Transistor Type: HEMT
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 17dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 340W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
2.62GHz ~ 2.69GHz
17dB
48 V
-
-
200 mA
340W
125 V
H-37248-4
H-37248-4
A2V09H525-04NR6
NXP

RF MOSFET LDMOS 48V OM1230-4

  • Transistor Type: LDMOS
  • Frequency: 720MHz ~ 960MHz
  • Gain: 18.9dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 688 mA
  • Power - Output: 120W
  • Voltage - Rated: 105 V
  • Package / Case: OM-1230-4L
  • Supplier Device Package: OM-1230-4L
패키지: -
Request a Quote
720MHz ~ 960MHz
18.9dB
48 V
10µA
-
688 mA
120W
105 V
OM-1230-4L
OM-1230-4L
PTRA094252FC-V1-R2
MACOM Technology Solutions

RF MOSFET LDMOS H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 746MHz ~ 960MHz
  • Gain: 23dB
  • Voltage - Test: -
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 351.5W
  • Voltage - Rated: 105 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
746MHz ~ 960MHz
23dB
-
10µA
-
-
351.5W
105 V
H-37248-4
H-37248-4
BLP05H9S500PY
Ampleon USA Inc.

RF MOSFET LDMOS 50V OMP780

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: 25.2dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 50 mA
  • Power - Output: 500W
  • Voltage - Rated: 108 V
  • Package / Case: OMP-780-4F-1
  • Supplier Device Package: OMP-780-4F-1
패키지: -
재고102
-
25.2dB
50 V
2.8µA
-
50 mA
500W
108 V
OMP-780-4F-1
OMP-780-4F-1
NTD3055AVT4
onsemi

RF MOSFET 60V DPAK

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
UF28100M
MACOM Technology Solutions

RF MOSFET N-CHANNEL 28V

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 100MHz ~ 500MHz
  • Gain: 10dB
  • Voltage - Test: 28 V
  • Current Rating: 3mA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 100W
  • Voltage - Rated: 65 V
  • Package / Case: 4L-FLG
  • Supplier Device Package: -
패키지: -
Request a Quote
100MHz ~ 500MHz
10dB
28 V
3mA
-
600 mA
100W
65 V
4L-FLG
-
MRF8VP13350NR5
NXP

RF MOSFET LDMOS 50V OM780G-4

  • Transistor Type: LDMOS
  • Frequency: 700MHz ~ 1.3GHz
  • Gain: 19.2dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 350W
  • Voltage - Rated: 100 V
  • Package / Case: OM-780G-4L
  • Supplier Device Package: OM-780G-4L
패키지: -
Request a Quote
700MHz ~ 1.3GHz
19.2dB
50 V
10µA
-
100 mA
350W
100 V
OM-780G-4L
OM-780G-4L
BLP15H9S10GXY
Ampleon USA Inc.

RF MOSFET LDMOS 50V TO270

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 21dB
  • Voltage - Test: 50 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 50 mA
  • Power - Output: 10W
  • Voltage - Rated: 106 V
  • Package / Case: TO-270BA
  • Supplier Device Package: TO-270-2G-1
패키지: -
Request a Quote
2GHz
21dB
50 V
1.4µA
-
50 mA
10W
106 V
TO-270BA
TO-270-2G-1
TBB1012MMTL-E
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
-
-
-
-
-
-
-
-