페이지 74 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  74/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA071701FV4XWSA1
Infineon Technologies

FET RF LDMOS 170W H37248-2

  • Transistor Type: LDMOS
  • Frequency: 765MHz
  • Gain: 18.7dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고3,392
765MHz
18.7dB
30V
-
-
900mA
150W
65V
2-Flatpack, Fin Leads, Flanged
H-37248-2
BLF8G20LS-140VU
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 35W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: SOT1244B
패키지: SOT-1244B
재고3,248
1.81GHz ~ 1.88GHz
18.5dB
28V
-
-
900mA
35W
65V
SOT-1244B
SOT1244B
BLP8G10S-45PJ
NXP

TRANS LDMOS 45W 4HSOPF

  • Transistor Type: LDMOS (Dual)
  • Frequency: 952.5MHz ~ 957.5MHz
  • Gain: 20.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 224mA
  • Power - Output: 2.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1223-1
  • Supplier Device Package: 4-HSOPF
패키지: SOT-1223-1
재고4,880
952.5MHz ~ 957.5MHz
20.8dB
28V
-
-
224mA
2.5W
65V
SOT-1223-1
4-HSOPF
MRF8S23120HR5
NXP

FET RF 65V 2.3GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고4,928
2.3GHz
16dB
28V
-
-
800mA
28W
65V
NI-780
NI-780
BF245A,126
NXP

JFET N-CH 30V 6.5MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 6.5mA
  • Noise Figure: 1.5dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고3,920
100MHz
-
15V
6.5mA
1.5dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRF6S19200HSR3
NXP

FET RF 66V 1.99GHZ NI780S

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 17.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 56W
  • Voltage - Rated: 66V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고6,384
1.93GHz ~ 1.99GHz
17.9dB
28V
-
-
1.6A
56W
66V
NI-780S
NI-780S
MRF7S27130HR5
NXP

FET RF 65V 2.7GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 23W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고6,240
2.7GHz
16.5dB
28V
-
-
1.5A
23W
65V
NI-780
NI-780
MRF7S21110HR5
NXP

FET RF 65V 2.17GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 33W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고3,312
2.17GHz
17.3dB
28V
-
-
1.1A
33W
65V
NI-780
NI-780
BLF6G22LS-130,118
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: 34A
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고6,272
2.11GHz ~ 2.17GHz
17dB
28V
34A
-
1.1A
30W
65V
SOT-502B
SOT502B
BF556C,215
NXP

JFET N-CH 30V 18MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 18mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고2,000
-
-
-
18mA
-
-
-
30V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
PTFB182557SHV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,680
-
-
-
-
-
-
-
-
-
-
ARF1519
Microsemi Corporation

RF PWR MOSFET 1000V 20A DIE

  • Transistor Type: N-Channel
  • Frequency: 13.56MHz
  • Gain: 20dB
  • Voltage - Test: 200V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 750W
  • Voltage - Rated: 1000V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고4,080
13.56MHz
20dB
200V
20A
-
-
750W
1000V
Die
Die
hot MRF8S21200HSR6
NXP

FET RF 2CH 65V 2.14GHZ NI-1230HS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.14GHz
  • Gain: 18.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 48W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고3,840
2.14GHz
18.1dB
28V
-
-
1.4A
48W
65V
NI-1230S
NI-1230S
BLC9G20XS-160AVY
Ampleon USA Inc.

BLC9G20XS-160AV/SOT1275/REELDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,032
-
-
-
-
-
-
-
-
-
-
MRF8S9102NR3
NXP

FET RF 70V 920MHZ OM780-2

  • Transistor Type: LDMOS
  • Frequency: 920MHz
  • Gain: 23.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 28W
  • Voltage - Rated: 70V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
패키지: OM-780-2
재고2,656
920MHz
23.1dB
28V
-
-
750mA
28W
70V
OM-780-2
OM-780-2
hot MRF8S21100HSR3
NXP

FET RF 65V 2.17GHZ NI780S

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고6,960
2.17GHz
18.3dB
28V
-
-
700mA
24W
65V
NI-780S
NI-780S
MMRF2010GNR1
NXP

TRANS RF LDMOS 250W 50V

  • Transistor Type: LDMOS
  • Frequency: 1.09GHz
  • Gain: 32.1dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 80mA
  • Power - Output: 250W
  • Voltage - Rated: 100V
  • Package / Case: TO-270-14 Variant, Gull Wing
  • Supplier Device Package: TO-270 WB-14 GULL
패키지: TO-270-14 Variant, Gull Wing
재고7,440
1.09GHz
32.1dB
50V
-
-
80mA
250W
100V
TO-270-14 Variant, Gull Wing
TO-270 WB-14 GULL
BLM7G22S-60PBY
Ampleon USA Inc.

RF FET LDMOS 65V 31.5DB SOT12121

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.14GHz
  • Gain: 31.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 75mA
  • Power - Output: 1.6W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1212-1
  • Supplier Device Package: 16-HSOP
패키지: SOT-1212-1
재고5,760
2.14GHz
31.5dB
28V
-
-
75mA
1.6W
65V
SOT-1212-1
16-HSOP
STAC2932BW
STMicroelectronics

TRANS RF PWR N-CH 300W STAC244B

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: -
  • Voltage - Test: 50V
  • Current Rating: 40A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 390W
  • Voltage - Rated: 125V
  • Package / Case: STAC244B
  • Supplier Device Package: STAC244B
패키지: STAC244B
재고5,568
175MHz
-
50V
40A
-
250mA
390W
125V
STAC244B
STAC244B
BF 998 E6327
Infineon Technologies

MOSFET N-CH 12V 200MA SOT-143

  • Transistor Type: N-Channel
  • Frequency: 45MHz
  • Gain: 28dB
  • Voltage - Test: 8V
  • Current Rating: 30mA
  • Noise Figure: 2.8dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 12V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
패키지: TO-253-4, TO-253AA
재고42,552
45MHz
28dB
8V
30mA
2.8dB
10mA
-
12V
TO-253-4, TO-253AA
PG-SOT143-4
BLF6G27-10G,112
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT975C

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 3.5A
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: SOT-975C
  • Supplier Device Package: CDFM2
패키지: SOT-975C
재고8,892
2.5GHz ~ 2.7GHz
19dB
28V
3.5A
-
130mA
2W
65V
SOT-975C
CDFM2
GTRA362802FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 13.5dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 280W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
패키지: -
재고150
3.4GHz ~ 3.6GHz
13.5dB
48 V
-
-
200 mA
280W
125 V
H-37248C-4
H-37248C-4
BLC10G22XS-401AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 32V DFM6

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 15dB
  • Voltage - Test: 32 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.085 A
  • Power - Output: 400W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
패키지: -
재고138
2.11GHz ~ 2.2GHz
15dB
32 V
1.4µA
-
1.085 A
400W
65 V
SOT-1275-1
DFM6
ART2K0TFEGJ
Ampleon USA Inc.

RF MOSFET 1230/TRAY

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1MHz ~ 400MHz
  • Gain: 29dB
  • Voltage - Test: 65 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 2000W
  • Voltage - Rated: 200 V
  • Package / Case: ACC-1230-6G-2
  • Supplier Device Package: ACC-1230-6G-2
패키지: -
재고135
1MHz ~ 400MHz
29dB
65 V
2.8µA
-
100 mA
2000W
200 V
ACC-1230-6G-2
ACC-1230-6G-2
PTFC262808FV-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37275G-6

  • Transistor Type: LDMOS
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 18dB
  • Voltage - Test: 28 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 10 mA
  • Power - Output: 280W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275G-6/2
  • Supplier Device Package: H-37275G-6/2
패키지: -
Request a Quote
2.62GHz ~ 2.69GHz
18dB
28 V
1µA
-
10 mA
280W
65 V
H-37275G-6/2
H-37275G-6/2
CE7613M4
CEL

RF MOSFET 2V 4MINIMOLD

  • Transistor Type: -
  • Frequency: 12GHz
  • Gain: 14.1dB
  • Voltage - Test: 2 V
  • Current Rating: 31.9mA
  • Noise Figure: 0.35dB
  • Current - Test: 10 mA
  • Power - Output: -
  • Voltage - Rated: 4 V
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-Super Mini Mold
패키지: -
재고366
12GHz
14.1dB
2 V
31.9mA
0.35dB
10 mA
-
4 V
SOT-343F
4-Super Mini Mold
BCP040C
BeRex Inc

RF MOSFET PHEMT FET 8V DIE

  • Transistor Type: pHEMT FET
  • Frequency: 6GHz ~ 18GHz
  • Gain: 13.5dB
  • Voltage - Test: 8 V
  • Current Rating: 150mA
  • Noise Figure: 1.05dB
  • Current - Test: 60 mA
  • Power - Output: 25.5dBm
  • Voltage - Rated: 12 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
6GHz ~ 18GHz
13.5dB
8 V
150mA
1.05dB
60 mA
25.5dBm
12 V
Die
Die
UPA509TA-T2-A
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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