페이지 79 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  79/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA190451FV4XWSA1
Infineon Technologies

IC FET RF LDMOS 45W H-37265-2

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 11W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37265-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고7,968
1.96GHz
17.5dB
28V
10µA
-
450mA
11W
65V
2-Flatpack, Fin Leads, Flanged
H-37265-2
PTFA092201FV4XWSA1
Infineon Technologies

IC FET RF LDMOS 220W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.85A
  • Power - Output: 220W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고6,176
960MHz
18.5dB
30V
10µA
-
1.85A
220W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
BLC9G24LS-170AVZ
Ampleon USA Inc.

TRANS RF 170W LDMOS DFM6F

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: DFM6
패키지: -
재고3,280
-
-
-
-
-
-
-
-
-
DFM6
MAGX-002731-030L00
M/A-Com Technology Solutions

TRANSISTOR GAN 30WPK 2.7-3.1GHZ

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 11.2dB
  • Voltage - Test: 50V
  • Current Rating: 1.5A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,464
2.7GHz ~ 3.1GHz
11.2dB
50V
1.5A
-
250mA
30W
65V
-
-
MRF6S19100NR1
NXP

FET RF 68V 1.99GHZ TO270-4

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 22W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고3,152
1.99GHz
14.5dB
28V
-
-
950mA
22W
68V
TO-270AB
TO-270 WB-4
MRF5S4140HSR5
NXP

FET RF 65V 465MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 465MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.25A
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고4,896
465MHz
21dB
28V
-
-
1.25A
28W
65V
NI-780S
NI-780S
MRF5S21100HSR5
NXP

FET RF 65V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.16GHz ~ 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.05A
  • Power - Output: 23W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고4,624
2.16GHz ~ 2.17GHz
13.5dB
28V
-
-
1.05A
23W
65V
NI-780S
NI-780S
SD56150
STMicroelectronics

FET RF 65V 860MHZ M252

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 16.5dB
  • Voltage - Test: 32V
  • Current Rating: 17A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: M252
  • Supplier Device Package: M252
패키지: M252
재고2,752
860MHz
16.5dB
32V
17A
-
500mA
150W
65V
M252
M252
2N3819_D27Z
Fairchild/ON Semiconductor

JFET N-CH 25V 50MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 50mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고6,816
-
-
-
50mA
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLF404,115
Ampleon USA Inc.

RF FET NCHA 40V 11.5DB SOT409A

  • Transistor Type: N-Channel
  • Frequency: 500MHz
  • Gain: 11.5dB
  • Voltage - Test: 12.5V
  • Current Rating: 1.5A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 4W
  • Voltage - Rated: 40V
  • Package / Case: SOT-409A
  • Supplier Device Package: 8-CDIP
패키지: SOT-409A
재고4,512
500MHz
11.5dB
12.5V
1.5A
-
50mA
4W
40V
SOT-409A
8-CDIP
PTFB090901EAV2R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,856
-
-
-
-
-
-
-
-
-
-
MMRF1312GSR5
NXP

TRANS 960-1215MHZ 1000W PEAK 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.03GHz
  • Gain: 19.6dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 112V
  • Package / Case: NI-1230-4S GW
  • Supplier Device Package: NI-1230-4S Gull Wing
패키지: NI-1230-4S GW
재고5,024
1.03GHz
19.6dB
50V
-
-
100mA
1000W
112V
NI-1230-4S GW
NI-1230-4S Gull Wing
MHT1001HR5
NXP

IC TRANS RF LDMOS 2450MHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.39GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 40W
  • Voltage - Rated: 68V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고7,824
2.39GHz
14dB
28V
-
-
1.9A
40W
68V
SOT-979A
NI-1230-4H
BLF6G10L-260PBM,11
Ampleon USA Inc.

RF FET LDMOS 65V SOT1110A

  • Transistor Type: LDMOS (Dual)
  • Frequency: -
  • Gain: -
  • Voltage - Test: 28V
  • Current Rating: 64A
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1110A
  • Supplier Device Package: CDFM8
패키지: SOT-1110A
재고6,640
-
-
28V
64A
-
1.8A
40W
65V
SOT-1110A
CDFM8
AFT09S200W02SR3
NXP

TRANSISTOR RF LDMOS 4W PLD

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,816
-
-
-
-
-
-
-
-
-
-
AFT09S200W02NR3
NXP

FET RF 70V 960MHZ PLD

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 56W
  • Voltage - Rated: 70V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
패키지: OM-780-2
재고4,896
960MHz
19.2dB
28V
-
-
1.4A
56W
70V
OM-780-2
OM-780-2
BLM7G1822S-40PBY
Ampleon USA Inc.

RF FET LDMOS 65V 31.5DB SOT12111

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.81GHz ~ 2.17GHz
  • Gain: 31.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40mA
  • Power - Output: 4W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1211-1
  • Supplier Device Package: 16-HSOP
패키지: SOT-1211-1
재고5,696
1.81GHz ~ 2.17GHz
31.5dB
28V
-
-
40mA
4W
65V
SOT-1211-1
16-HSOP
BF545A,215
NXP

JFET N-CH 30V 6.5MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 6.5mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고6,096
-
-
-
6.5mA
-
-
-
30V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BLF1721M8LS200U
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고7,776
2.11GHz ~ 2.17GHz
19dB
28V
-
-
2A
55W
65V
SOT-502B
SOT502B
FH2164
MACOM Technology Solutions

RF MOSFET 12V

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 30MHz ~ 90MHz
  • Gain: 13dB
  • Voltage - Test: 12 V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 8W
  • Voltage - Rated: 65 V
  • Package / Case: 4L-FLG
  • Supplier Device Package: -
패키지: -
Request a Quote
30MHz ~ 90MHz
13dB
12 V
4A
-
600 mA
8W
65 V
4L-FLG
-
CGH35240F
MACOM Technology Solutions

RF MOSFET HEMT 28V 440201

  • Transistor Type: HEMT
  • Frequency: 3.1GHz ~ 3.5GHz
  • Gain: 11.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1 A
  • Power - Output: 220W
  • Voltage - Rated: 120 V
  • Package / Case: 440201
  • Supplier Device Package: 440201
패키지: -
재고54
3.1GHz ~ 3.5GHz
11.5dB
28 V
-
-
1 A
220W
120 V
440201
440201
BLS6G2933P-200-117
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOM038

  • Transistor Type: LDMOS
  • Frequency: 2.9GHz ~ 3.3GHz
  • Gain: 11dB
  • Voltage - Test: 32 V
  • Current Rating: 66A
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 215W
  • Voltage - Rated: 60 V
  • Package / Case: SOM038
  • Supplier Device Package: SOM038
패키지: -
Request a Quote
2.9GHz ~ 3.3GHz
11dB
32 V
66A
-
100 mA
215W
60 V
SOM038
SOM038
A5G35H120NT2
NXP

RF MOSFET GAN 48V 10DFN

  • Transistor Type: GaN
  • Frequency: 3.3GHz ~ 3.7GHz
  • Gain: 14.1dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 70 mA
  • Power - Output: 18W
  • Voltage - Rated: 125 V
  • Package / Case: 10-PowerLDFN
  • Supplier Device Package: 10-DFN (7x10)
패키지: -
Request a Quote
3.3GHz ~ 3.7GHz
14.1dB
48 V
-
-
70 mA
18W
125 V
10-PowerLDFN
10-DFN (7x10)
PTRA094808NF-V1-R5
MACOM Technology Solutions

RF MOSFET LDMOS 48V 6HBSOF

  • Transistor Type: LDMOS
  • Frequency: 859MHz ~ 960MHz
  • Gain: 17.5dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 450 mA
  • Power - Output: 300W
  • Voltage - Rated: 105 V
  • Package / Case: HBSOF-6-2
  • Supplier Device Package: PG-HBSOF-6-2
패키지: -
Request a Quote
859MHz ~ 960MHz
17.5dB
48 V
10µA
-
450 mA
300W
105 V
HBSOF-6-2
PG-HBSOF-6-2
CGHV35060MP-AMP1
MACOM Technology Solutions

RF MOSFET HEMT 50V 20TSSOP

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 3.8GHz
  • Gain: 14.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 125 mA
  • Power - Output: 60W
  • Voltage - Rated: 150 V
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
패키지: -
Request a Quote
2.7GHz ~ 3.8GHz
14.5dB
50 V
-
-
125 mA
60W
150 V
20-TSSOP (0.173", 4.40mm Width)
20-TSSOP
MWT-7F
CML Microcircuits

RF MOSFET MESFET 4V CHIP

  • Transistor Type: MESFET
  • Frequency: 500MHz ~ 26GHz
  • Gain: 8dB
  • Voltage - Test: 4 V
  • Current Rating: 85mA
  • Noise Figure: 2dB
  • Current - Test: 85 mA
  • Power - Output: 21dBm
  • Voltage - Rated: 6 V
  • Package / Case: Die
  • Supplier Device Package: Chip
패키지: -
재고90
500MHz ~ 26GHz
8dB
4 V
85mA
2dB
85 mA
21dBm
6 V
Die
Chip
PTVA101K02EV-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 50V H-36275-4

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 21dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 900W
  • Voltage - Rated: 105 V
  • Package / Case: H-36275-4
  • Supplier Device Package: H-36275-4
패키지: -
재고282
1.03GHz ~ 1.09GHz
21dB
50 V
-
-
150 mA
900W
105 V
H-36275-4
H-36275-4
BLC6G27LS-100-118
NXP Semiconductors

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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