페이지 80 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  80/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTAB182002TCV2XWSA1
Infineon Technologies

IC RF FET LDMOS 190W H-49248H-4

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,784
-
-
-
-
-
-
-
-
-
-
BF2030RE6814HTSA1
Infineon Technologies

MOSFET N-CH 8V 40MA SOT-143R

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 23dB
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 1.5dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: SOT-143R
  • Supplier Device Package: PG-SOT143R-4
패키지: SOT-143R
재고5,760
800MHz
23dB
5V
40mA
1.5dB
10mA
-
8V
SOT-143R
PG-SOT143R-4
MAGX-003135-120L00
M/A-Com Technology Solutions

FET RF 65V 3.5GHZ

  • Transistor Type: HEMT
  • Frequency: 3.1GHz ~ 3.5GHz
  • Gain: 11.2dB
  • Voltage - Test: 50V
  • Current Rating: 9mA
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 120W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,104
3.1GHz ~ 3.5GHz
11.2dB
50V
9mA
-
300mA
120W
65V
-
-
MRF8P26080HR3
NXP

FET RF 2CH 65V 2.62GHZ NI780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.62GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 14W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
패키지: NI-780-4
재고7,040
2.62GHz
15dB
28V
-
-
300mA
14W
65V
NI-780-4
NI-780-4
ON5402,518
NXP

MOSFET RF 8SOIC

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,584
-
-
-
-
-
-
-
-
8-SOIC (0.154", 3.90mm Width)
8-SO
MRF6VP3450HSR6
NXP

FET RF 2CH 110V 860MHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 860MHz
  • Gain: 22.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 90W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고3,056
860MHz
22.5dB
50V
-
-
1.4A
90W
110V
NI-1230S
NI-1230S
2N5247_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 400MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: 4dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고3,744
400MHz
-
-
-
4dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRF7S21170HSR5
NXP

FET RF 65V 2.17GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
패키지: NI-880S
재고3,232
2.17GHz
16dB
28V
-
-
1.4A
50W
65V
NI-880S
NI-880S
NE3514S02-T1C-A
CEL

HJ-FET NCH 10DB S02

  • Transistor Type: HFET
  • Frequency: 20GHz
  • Gain: 10dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.75dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S02
패키지: 4-SMD, Flat Leads
재고3,056
20GHz
10dB
2V
70mA
0.75dB
10mA
-
4V
4-SMD, Flat Leads
S02
PTFA092213ELV4R0XTMA1
Infineon Technologies

RFP-LDMOS GOLDMOS 8

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,576
-
-
-
-
-
-
-
-
-
-
PTAC260302FCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,096
-
-
-
-
-
-
-
-
-
-
PTFA091201EV4R0XTMA1
Infineon Technologies

RF MOSFET LDMOS 28V H-36248-2

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 120W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-36248-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고4,496
920MHz ~ 960MHz
19dB
28V
10µA
-
750mA
120W
65V
2-Flatpack, Fin Leads, Flanged
H-36248-2
AFT09H310-03SR6
NXP

FET RF 2CH 70V 920MHZ NI1230S-4S

  • Transistor Type: LDMOS
  • Frequency: 920MHz
  • Gain: 17.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 680mA
  • Power - Output: 56W
  • Voltage - Rated: 70V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고3,296
920MHz
17.9dB
28V
-
-
680mA
56W
70V
NI-1230S
NI-1230S
hot SD3933
STMicroelectronics

IC TRANS RF PWR HF/VHF/UHF M177

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 29dB
  • Voltage - Test: 100V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 350W
  • Voltage - Rated: 250V
  • Package / Case: M177
  • Supplier Device Package: M177
패키지: M177
재고4,912
30MHz
29dB
100V
20A
-
250mA
350W
250V
M177
M177
BLF7G20LS-250P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 65A
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 70W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: CDFM4
패키지: SOT539B
재고3,520
1.81GHz ~ 1.88GHz
18dB
28V
65A
-
1.9A
70W
65V
SOT539B
CDFM4
BLF10M6200U
Ampleon USA Inc.

RF FET LDMOS 65V 20DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502A
패키지: SOT-502A
재고2,880
871.5MHz ~ 891.5MHz
20dB
28V
-
-
1.4A
40W
65V
SOT-502A
SOT502A
SD57045-01
STMicroelectronics

FET RF 65V 945MHZ M250

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: M250
  • Supplier Device Package: M250
패키지: M250
재고5,856
945MHz
15dB
28V
5A
-
250mA
45W
65V
M250
M250
PD57045-E
STMicroelectronics

FET RF 65V 945MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
패키지: PowerSO-10 Exposed Bottom Pad
재고3,488
945MHz
14.5dB
28V
5A
-
250mA
45W
65V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
hot ATF-551M4-BLK
Broadcom Limited

IC PHEMT 2GHZ 2.7V 10MA MINIPAK

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 17.5dB
  • Voltage - Test: 2.7V
  • Current Rating: 100mA
  • Noise Figure: 0.5dB
  • Current - Test: 10mA
  • Power - Output: 14.6dBm
  • Voltage - Rated: 5V
  • Package / Case: 0505 (1412 Metric)
  • Supplier Device Package: MiniPak 1412
패키지: 0505 (1412 Metric)
재고13,248
2GHz
17.5dB
2.7V
100mA
0.5dB
10mA
14.6dBm
5V
0505 (1412 Metric)
MiniPak 1412
2SK209-Y(TE85L,F)
Toshiba Semiconductor and Storage

JFET N-CH SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: 1kHz
  • Gain: -
  • Voltage - Test: 10V
  • Current Rating: -
  • Noise Figure: 1dB
  • Current - Test: 500µA
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
패키지: TO-236-3, SC-59, SOT-23-3
재고26,622
1kHz
-
10V
-
1dB
500µA
-
-
TO-236-3, SC-59, SOT-23-3
SC-59
BLF8G10LS-270GVJ
Ampleon USA Inc.

RF FET LDMOS 65V 19.5DB SOT1244C

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 67W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244C
  • Supplier Device Package: CDFM6
패키지: SOT-1244C
재고6,144
871.5MHz ~ 891.5MHz
19.5dB
28V
-
-
2A
67W
65V
SOT-1244C
CDFM6
TBB1010KMWS-E
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLC10G22XS-570AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.18GHz
  • Gain: 15.7dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.15 A
  • Power - Output: 570W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
패키지: -
재고183
2.11GHz ~ 2.18GHz
15.7dB
30 V
2.8µA
-
1.15 A
570W
65 V
SOT-1258-4
SOT1258-4
PXFC191507FC-V1-R0
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
C4H22W500AY
Ampleon USA Inc.

RF MOSFET 50V SOT1273-1

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 16dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450 mA
  • Power - Output: 500W
  • Voltage - Rated: 150 V
  • Package / Case: SOT-1273-1
  • Supplier Device Package: SOT1273-1
패키지: -
재고90
2.11GHz ~ 2.17GHz
16dB
50 V
-
-
450 mA
500W
150 V
SOT-1273-1
SOT1273-1
BLM8G0710S-30PBYZ
Ampleon USA Inc.

RF FET LDMOS 65V 35DB SOT12112

  • Transistor Type: LDMOS (Dual)
  • Frequency: 700MHz ~ 1GHz
  • Gain: 35.7dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 120 mA
  • Power - Output: 3W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1211-3
  • Supplier Device Package: 16-HSOPF
패키지: -
Request a Quote
700MHz ~ 1GHz
35.7dB
28 V
1.4µA
-
120 mA
3W
65 V
SOT-1211-3
16-HSOPF
GTRB226002FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 15dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 450W
  • Voltage - Rated: 48 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
패키지: -
Request a Quote
2.11GHz ~ 2.2GHz
15dB
-
-
-
-
450W
48 V
H-37248C-4
H-37248C-4
MMRF1050HR6
NXP

RF MOSFET LDMOS 50V NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 850MHz ~ 950MHz
  • Gain: 21.3dB
  • Voltage - Test: 50 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 1050W
  • Voltage - Rated: 105 V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: -
Request a Quote
850MHz ~ 950MHz
21.3dB
50 V
1µA
-
100 mA
1050W
105 V
SOT-979A
NI-1230-4H