페이지 91 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  91/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PXAC261202FCV1XWSA1
Infineon Technologies

FET RF 2CH 65V 2.61GHZ

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.61GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 230mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: H-37248-4
재고6,736
2.61GHz
13.5dB
28V
-
-
230mA
28W
65V
H-37248-4
H-37248-4
PTFA260851E V1 R250
Infineon Technologies

FET RF 65V 2.68GHZ H-30248-2

  • Transistor Type: LDMOS
  • Frequency: 2.68GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 85W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-30248-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고3,536
2.68GHz
14dB
28V
10µA
-
900mA
85W
65V
2-Flatpack, Fin Leads, Flanged
H-30248-2
PTFA181001EV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 100W H-36248-2

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 100W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
패키지: 2-Flatpack, Fin Leads
재고6,336
1.88GHz
16.5dB
28V
1µA
-
750mA
100W
65V
2-Flatpack, Fin Leads
H-36248-2
PTFA082201E V1
Infineon Technologies

FET RF 65V 894MHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 894MHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.95A
  • Power - Output: 220W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
패키지: 2-Flatpack, Fin Leads
재고3,216
894MHz
18dB
30V
10µA
-
1.95A
220W
65V
2-Flatpack, Fin Leads
H-36260-2
BF 5020R E6327
Infineon Technologies

MOSFET N-CH 8V 25MA SOT143-4

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 26dB
  • Voltage - Test: 5V
  • Current Rating: 25mA
  • Noise Figure: 1.2dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: SOT-143R
  • Supplier Device Package: PG-SOT143R-4
패키지: SOT-143R
재고2,208
800MHz
26dB
5V
25mA
1.2dB
10mA
-
8V
SOT-143R
PG-SOT143R-4
MRF8HP21130HR3
NXP

FET RF 2CH 65V 2.17GHZ NI780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 360mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
패키지: NI-780-4
재고5,264
2.17GHz
14dB
28V
-
-
360mA
28W
65V
NI-780-4
NI-780-4
MRF8S26120HSR3
NXP

FET RF 65V 2.69GHZ NI780S

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 15.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고7,776
2.69GHz
15.6dB
28V
-
-
900mA
28W
65V
NI-780S
NI-780S
ON5157,127
NXP

MOSFET RF TO220AB TO220AB

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고6,352
-
-
-
-
-
-
-
-
TO-220-3
TO-220AB
MRF6V14300HR3
NXP

FET RF 100V 1.4GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 1.4GHz
  • Gain: 18dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 330W
  • Voltage - Rated: 100V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고2,320
1.4GHz
18dB
50V
-
-
150mA
330W
100V
NI-780
NI-780
MD7P19130HR5
NXP

FET RF 2CH 65V 1.99GHZ NI780H-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.99GHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.25A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
패키지: NI-780-4
재고6,256
1.99GHz
20dB
28V
-
-
1.25A
40W
65V
NI-780-4
NI-780-4
MRF282SR1
NXP

FET RF 65V 2GHZ NI-200S

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 11.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 75mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-200S
  • Supplier Device Package: NI-200S
패키지: NI-200S
재고7,344
2GHz
11.5dB
26V
-
-
75mA
10W
65V
NI-200S
NI-200S
hot MRF6S27015GNR1
NXP

FET RF 68V 2.6GHZ TO270-2 GW

  • Transistor Type: LDMOS
  • Frequency: 2.6GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 160mA
  • Power - Output: 3W
  • Voltage - Rated: 68V
  • Package / Case: TO-270-2 Gull Wing
  • Supplier Device Package: TO-270-2 GULL
패키지: TO-270-2 Gull Wing
재고11,100
2.6GHz
14dB
28V
-
-
160mA
3W
68V
TO-270-2 Gull Wing
TO-270-2 GULL
MRF6S21140HR5
NXP

FET RF 68V 2.12GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 2.12GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 30W
  • Voltage - Rated: 68V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고4,560
2.12GHz
15.5dB
28V
-
-
1.2A
30W
68V
NI-880
NI-880
2N5484_D27Z
Fairchild/ON Semiconductor

JFET N-CH 25V 5MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 400MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 5mA
  • Noise Figure: 4dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고5,024
400MHz
-
15V
5mA
4dB
-
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PTFB213208FVV2R2XTMA1
Infineon Technologies

RF MOSFET TRANSISTORS RFP-LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,512
-
-
-
-
-
-
-
-
-
-
PTAB182002FCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,272
-
-
-
-
-
-
-
-
-
-
BLS9G2735L-50U
Ampleon USA Inc.

BLS9G2735L-50/SOT1135/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,896
-
-
-
-
-
-
-
-
-
-
AFT21S240-12SR3
NXP

FET RF 65V 2.17GHZ NI780S-2

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 20.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: NI-880XS-2L-2L
  • Supplier Device Package: NI-880XS-2L-2L
패키지: NI-880XS-2L-2L
재고4,800
2.17GHz
20.4dB
28V
-
-
1.4A
55W
65V
NI-880XS-2L-2L
NI-880XS-2L-2L
AFT21S230-12SR3
NXP

FET RF 65V 2.11GHZ NI780-2L2L

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz
  • Gain: 16.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고3,200
2.11GHz
16.7dB
28V
-
-
1.5A
50W
65V
NI-780S
NI-780S
hot AFT20P140-4WNR3
NXP

FET RF 2CH 65V 1.91GHZ OM780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.88GHz ~ 1.91GHz
  • Gain: 17.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: OM780-4
  • Supplier Device Package: OM780-4
패키지: OM780-4
재고5,952
1.88GHz ~ 1.91GHz
17.8dB
28V
-
-
500mA
24W
65V
OM780-4
OM780-4
BLF647PS,112
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.3GHz
  • Gain: 17.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 200W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121B
  • Supplier Device Package: CDFM4
패키지: SOT-1121B
재고4,000
1.3GHz
17.5dB
32V
-
-
100mA
200W
65V
SOT-1121B
CDFM4
BF992,215
NXP

MOSFET NCH DUAL GATE 20V SOT143B

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 200MHz
  • Gain: -
  • Voltage - Test: 10V
  • Current Rating: 40mA
  • Noise Figure: 1.2dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고28,770
200MHz
-
10V
40mA
1.2dB
15mA
-
20V
TO-253-4, TO-253AA
SOT-143B
BLP7G10S-160PY
Ampleon USA Inc.

RF MOSFET LDMOS 28V 4HSOPF

  • Transistor Type: LDMOS
  • Frequency: 600MHz ~ 960MHz
  • Gain: 19.4dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 160W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1223-2
  • Supplier Device Package: 4-HSOPF
패키지: -
Request a Quote
600MHz ~ 960MHz
19.4dB
28 V
1.4µA
-
100 mA
160W
65 V
SOT-1223-2
4-HSOPF
TAV-551
Mini-Circuits

RF MOSFET E-PHEMT 3V FG873

  • Transistor Type: E-pHEMT
  • Frequency: 6GHz
  • Gain: 16.3dB
  • Voltage - Test: 3 V
  • Current Rating: -
  • Noise Figure: 1.7dB
  • Current - Test: 15 mA
  • Power - Output: 20.1dB
  • Voltage - Rated: 5 V
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: FG873
패키지: -
Request a Quote
6GHz
16.3dB
3 V
-
1.7dB
15 mA
20.1dB
5 V
4-SMD, No Lead
FG873
BCG008
BeRex Inc

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 26GHz
  • Gain: 9.5dB
  • Voltage - Test: 28 V
  • Current Rating: 770mA
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 8W
  • Voltage - Rated: 90 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
26GHz
9.5dB
28 V
770mA
-
60 mA
8W
90 V
Die
Die
PTFC260202FC-V1
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 20dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 170 mA
  • Power - Output: 5W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
2.69GHz
20dB
28 V
-
-
170 mA
5W
65 V
H-37248-4
H-37248-4
MWT-PH27F
CML Microcircuits

RF MOSFET PHEMT FET 3V CHIP

  • Transistor Type: pHEMT FET
  • Frequency: 26GHz
  • Gain: 14dB
  • Voltage - Test: 3 V
  • Current Rating: 120mA
  • Noise Figure: -
  • Current - Test: 1 mA
  • Power - Output: 25dBm
  • Voltage - Rated: -
  • Package / Case: Die
  • Supplier Device Package: Chip
패키지: -
재고210
26GHz
14dB
3 V
120mA
-
1 mA
25dBm
-
Die
Chip
AFT05MP075N-54M
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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