페이지 1459 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  1,459/1,502
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설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF3711Z
Infineon Technologies

MOSFET N-CH 20V 92A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고390,000
MOSFET (Metal Oxide)
20V
92A (Tc)
4.5V, 10V
2.45V @ 250µA
24nC @ 4.5V
2150pF @ 10V
±20V
-
79W (Tc)
6 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BFL4037-1E
ON Semiconductor

MOSFET N-CH 500V 11A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 48.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3FS
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고3,936
MOSFET (Metal Oxide)
500V
11A (Tc)
10V
-
48.6nC @ 10V
1200pF @ 30V
±30V
-
2W (Ta), 40W (Tc)
430 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3FS
TO-220-3 Full Pack
VP0808B-E3
Vishay Siliconix

MOSFET P-CH 80V 0.88A TO-205

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
패키지: TO-205AD, TO-39-3 Metal Can
재고6,528
MOSFET (Metal Oxide)
80V
880mA (Ta)
10V
4.5V @ 1mA
-
150pF @ 25V
±20V
-
6.25W (Ta)
5 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AD, TO-39-3 Metal Can
2SJ665-DL-E
ON Semiconductor

MOSFET P-CH 100V 27A SMP-FD

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 77 mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMP-FD
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,704
MOSFET (Metal Oxide)
100V
27A (Ta)
4V, 10V
2.6V @ 1mA
74nC @ 10V
4200pF @ 20V
±20V
-
1.65W (Ta), 65W (Tc)
77 mOhm @ 14A, 10V
150°C (TJ)
Surface Mount
SMP-FD
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TK4A65DA(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 3.5A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 1.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고7,008
MOSFET (Metal Oxide)
650V
3.5A (Ta)
10V
4.4V @ 1mA
12nC @ 10V
600pF @ 25V
±30V
-
35W (Tc)
1.9 Ohm @ 1.8A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
PSMN9R0-25YLC,115
NXP

MOSFET N-CH 25V 46A LL LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.95V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 694pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
패키지: SC-100, SOT-669
재고7,776
MOSFET (Metal Oxide)
25V
46A (Tc)
4.5V, 10V
1.95V @ 1mA
12nC @ 10V
694pF @ 12V
±20V
-
34W (Tc)
9.1 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
HUF75842S3S
Fairchild/ON Semiconductor

MOSFET N-CH 150V 43A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 175nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,320
MOSFET (Metal Oxide)
150V
43A (Tc)
10V
4V @ 250µA
175nC @ 20V
2730pF @ 25V
±20V
-
230W (Tc)
42 mOhm @ 43A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FQP9N08L
Fairchild/ON Semiconductor

MOSFET N-CH 80V 9.3A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 210 mOhm @ 4.65A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고103,464
MOSFET (Metal Oxide)
80V
9.3A (Tc)
5V, 10V
5V @ 250µA
6.1nC @ 5V
280pF @ 25V
±20V
-
40W (Tc)
210 mOhm @ 4.65A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FDD107AN06LA0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 10.9A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 10.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 91 mOhm @ 10.9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,704
MOSFET (Metal Oxide)
60V
3.4A (Ta), 10.9A (Tc)
5V, 10V
3V @ 250µA
5.5nC @ 5V
360pF @ 25V
±20V
-
25W (Tc)
91 mOhm @ 10.9A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFI610G
Vishay Siliconix

MOSFET N-CH 200V 2.6A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
패키지: TO-220-3 Full Pack, Isolated Tab
재고2,944
MOSFET (Metal Oxide)
200V
2.6A (Ta)
-
-
-
-
-
-
-
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
IPP65R660CFDAAKSA1
Infineon Technologies

MOSFET N-CH 650V TO-220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 543pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 660 mOhm @ 3.2A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고4,576
MOSFET (Metal Oxide)
650V
6A (Tc)
10V
4.5V @ 200µA
20nC @ 10V
543pF @ 100V
±20V
-
62.5W (Tc)
660 mOhm @ 3.2A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
AOTF12T50P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 12A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1477pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3F
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고6,288
MOSFET (Metal Oxide)
500V
12A (Tc)
10V
5V @ 250µA
32nC @ 10V
1477pF @ 100V
±30V
-
43W (Tc)
500 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3F
TO-220-3 Full Pack
DMP3026SFDE-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1204pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type E)
  • Package / Case: 6-UDFN Exposed Pad
패키지: 6-UDFN Exposed Pad
재고5,776
MOSFET (Metal Oxide)
30V
10.4A (Ta)
4V, 10V
3V @ 250µA
19.6nC @ 10V
1204pF @ 15V
±25V
-
2W (Ta)
19 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-UDFN Exposed Pad
hot FDP8N50NZ
Fairchild/ON Semiconductor

MOSFET N-CH 500V TO-220AB-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고13,320
MOSFET (Metal Oxide)
500V
8A (Tc)
10V
5V @ 250µA
18nC @ 10V
735pF @ 25V
±25V
-
130W (Tc)
850 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FDMC6686P
Fairchild/ON Semiconductor

MOSFET P-CH 20V POWER33

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 122nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 18A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
  • Package / Case: 8-PowerWDFN
패키지: 8-PowerWDFN
재고5,568
MOSFET (Metal Oxide)
20V
18A (Ta), 56A (Tc)
1.8V, 4.5V
1V @ 250µA
122nC @ 4.5V
13200pF @ 10V
±8V
-
2.3W (Ta), 40W (Tc)
4 mOhm @ 18A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (3.3x3.3), Power33
8-PowerWDFN
TPN2R203NC,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 45A 8-TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고3,216
MOSFET (Metal Oxide)
30V
45A (Tc)
10V
2.3V @ 500µA
34nC @ 10V
2230pF @ 15V
±20V
-
700mW (Ta), 42W (Tc)
2.2 mOhm @ 22.5A, 10V
150°C (TJ)
Surface Mount
8-TSON Advance (3.3x3.3)
8-PowerVDFN
SSM3K7002CFU,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.17A SMD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: USM
  • Package / Case: SC-70, SOT-323
패키지: SC-70, SOT-323
재고3,952
MOSFET (Metal Oxide)
60V
170mA (Ta)
4.5V, 10V
2.1V @ 250µA
0.35nC @ 4.5V
17pF @ 10V
±20V
-
150mW (Ta)
3.9 Ohm @ 100mA, 10V
150°C (TJ)
Surface Mount
USM
SC-70, SOT-323
hot SPP17N80C3
Infineon Technologies

MOSFET N-CH 800V 17A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
패키지: TO-220-3
재고920,844
MOSFET (Metal Oxide)
800V
17A (Tc)
10V
3.9V @ 1mA
177nC @ 10V
2320pF @ 25V
±20V
-
208W (Tc)
290 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPD122N10N3GATMA1
Infineon Technologies

MOSFET N-CH 100V 59A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 46µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 46A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고146,892
MOSFET (Metal Oxide)
100V
59A (Tc)
6V, 10V
3.5V @ 46µA
35nC @ 10V
2500pF @ 50V
±20V
-
94W (Tc)
12.2 mOhm @ 46A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot CSD17302Q5A
Texas Instruments

MOSFET N-CH 30V 87A 8SON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Vgs(th) (Max) @ Id: 1.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
  • Vgs (Max): +10V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 14A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON (5x6)
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고19,620
MOSFET (Metal Oxide)
30V
16A (Ta), 87A (Tc)
3V, 8V
1.7V @ 250µA
7nC @ 4.5V
950pF @ 15V
+10V, -8V
-
3W (Ta)
7.9 mOhm @ 14A, 8V
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON (5x6)
8-PowerTDFN
DMN3066LVT-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 900mW
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
2.5V, 4.5V
1.5V @ 250µA
4 nC @ 4.5 V
328 pF @ 10 V
±12V
-
900mW
67mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
ICE20N60
IceMOS Technology

Superjunction MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 236W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
3.9V @ 250µA
59 nC @ 10 V
2064 pF @ 25 V
±20V
-
236W (Tc)
190mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
MSC025SMA120B
Microchip Technology

SICFET N-CH 1.2KV 103A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고432
SiCFET (Silicon Carbide)
1200 V
103A (Tc)
20V
2.8V @ 1mA
232 nC @ 20 V
3020 pF @ 1000 V
+25V, -10V
-
500W (Tc)
31mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
NTH4LN019N65S3H
onsemi

POWER MOSFET, N-CHANNEL, SUPERFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 14.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 282 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 15993 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 19.3mOhm @ 37.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
패키지: -
Request a Quote
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
4V @ 14.3mA
282 nC @ 10 V
15993 pF @ 400 V
±30V
-
625W (Tc)
19.3mOhm @ 37.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
DMN2400UFB4-7R
Diodes Incorporated

MOSFET N-CH X2-DFN1006-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 470mW (Ta)
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1006-3
  • Package / Case: 3-XFDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
20 V
750mA (Ta)
1.8V, 4.5V
900mV @ 250µA
0.5 nC @ 4.5 V
36 pF @ 16 V
±12V
-
470mW (Ta)
550mOhm @ 600mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
18N20F
Goford Semiconductor

MOSFET N-CH 200V 18A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: -
Request a Quote
MOSFET (Metal Oxide)
-
18A (Tc)
10V
3V @ 250µA
-
-
±20V
-
110W (Tc)
190mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
PMH850UPEH
Nexperia USA Inc.

MOSFET P-CH 30V 600MA DFN0606-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 62.2 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 660mW (Ta), 2.23W (Tc)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 500mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN0606-3
  • Package / Case: 3-XFDFN
패키지: -
재고12,684
MOSFET (Metal Oxide)
30 V
600mA (Ta)
1.5V, 4.5V
950mV @ 250µA
0.9 nC @ 4.5 V
62.2 pF @ 15 V
±8V
-
660mW (Ta), 2.23W (Tc)
1Ohm @ 500mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN0606-3
3-XFDFN
DMP2036UVTQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
Request a Quote
MOSFET (Metal Oxide)
20 V
6A (Ta)
1.8V, 4.5V
1V @ 250µA
20.5 nC @ 4.5 V
1808 pF @ 15 V
±8V
-
1.1W (Ta)
30mOhm @ 6.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6