페이지 1460 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품

IXFH1837

IXYS

MOSFET N-CH TO-247AD

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고4,224

-

FQPF9N50T

Fairchild/ON Semiconductor

MOSFET N-CH 500V 5.3A TO-220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 730 mOhm @ 2.65A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

재고3,808

MOSFET (Metal Oxide)

500V

5.3A (Tc)

10V

5V @ 250µA

36nC @ 10V

1450pF @ 25V

±30V

-

50W (Tc)

730 mOhm @ 2.65A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

FQU7P06TU

Fairchild/ON Semiconductor

MOSFET P-CH 60V 5.4A IPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 451 mOhm @ 2.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

재고7,344

MOSFET (Metal Oxide)

60V

5.4A (Tc)

10V

4V @ 250µA

8.2nC @ 10V

295pF @ 25V

±25V

-

2.5W (Ta), 28W (Tc)

451 mOhm @ 2.7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

FDR844P

Fairchild/ON Semiconductor

MOSFET P-CH 20V 10A SSOT-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4951pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SuperSOT?-8
Package / Case: 8-SMD, Gull Wing

패키지: 8-SMD, Gull Wing

재고4,304

MOSFET (Metal Oxide)

20V

10A (Ta)

1.8V, 4.5V

1.5V @ 250µA

74nC @ 4.5V

4951pF @ 10V

±8V

-

1.8W (Ta)

11 mOhm @ 10A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SuperSOT?-8

8-SMD, Gull Wing

IPAN70R360P7SXKSA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고3,216

-

IXTV98N20T

IXYS

MOSFET N-CH 200V 98A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고6,704

MOSFET (Metal Oxide)

200V

98A (Tc)

-

Through Hole

PLUS220

TO-220-3, Short Tab

EPC2016

EPC

TRANS GAN 100V 11A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고6,448

GaNFET (Gallium Nitride)

100V

11A (Ta)

5V

2.5V @ 3mA

5.2nC @ 5V

520pF @ 50V

+6V, -5V

-

16 mOhm @ 11A, 5V

-40°C ~ 125°C (TJ)

Surface Mount

Die

AON7428

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 50A 3X3DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Package / Case: 8-PowerWDFN

패키지: 8-PowerWDFN

재고8,808

MOSFET (Metal Oxide)

30V

34A (Ta), 50A (Tc)

4.5V, 10V

2.3V @ 250µA

60nC @ 10V

3120pF @ 15V

±20V

-

6.2W (Ta), 83W (Tc)

2.8 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN-EP (3.3x3.3)

8-PowerWDFN

STD4NK60Z-1

STMicroelectronics

MOSFET N-CH 600V 4A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

재고223,380

MOSFET (Metal Oxide)

600V

4A (Tc)

10V

4.5V @ 50µA

26nC @ 10V

510pF @ 25V

±30V

-

70W (Tc)

2 Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

STB6N65K3

STMicroelectronics

MOSFET N-CH 650V D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고6,544

-

IXFQ60N25X3

IXYS

MOSFET N-CH 250V 60A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고5,440

MOSFET (Metal Oxide)

250V

60A (Tc)

10V

4.5V @ 1.5mA

50nC @ 10V

3610pF @ 25V

±20V

-

320W (Tc)

23 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3P

TO-3P-3, SC-65-3

DMP2540UCB9-7

Diodes Incorporated

MOSFET P-CH 25V 4A UWLB1515-9

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Vgs (Max): -6V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-WLB1515-9
Package / Case: 9-UFBGA, WLBGA

패키지: 9-UFBGA, WLBGA

재고216,000

MOSFET (Metal Oxide)

25V

4A (Ta)

1.8V, 4.5V

1.1V @ 250µA

6nC @ 4.5V

450pF @ 10V

-6V

-

1W (Ta)

40 mOhm @ 2A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

U-WLB1515-9

9-UFBGA, WLBGA

IRFSL3806PBF

Infineon Technologies

MOSFET N-CH 60V 43A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고19,788

MOSFET (Metal Oxide)

60V

43A (Tc)

10V

4V @ 50µA

30nC @ 10V

1150pF @ 50V

±20V

-

71W (Tc)

15.8 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2Pak, TO-262AA

ZXMP6A13FQTA

Diodes Incorporated

MOSFET P-CH 60V 0.9A SOT23-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 219pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 400 mOhm @ 900mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고178,656

MOSFET (Metal Oxide)

60V

900mA (Ta)

4.5V, 10V

3V @ 250µA

2.9nC @ 4.5V

219pF @ 30V

±20V

-

625mW (Ta)

400 mOhm @ 900mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

2SK3978-TL-E

onsemi

2SK3978 - N-CHANNEL SILICON MOSF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 2A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TP
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: -

Request a Quote

MOSFET (Metal Oxide)

200 V

4A (Ta)

4V, 10V

2.6V @ 1mA

21 nC @ 10 V

950 pF @ 20 V

±20V

-

1W (Ta), 20W (Tc)

550mOhm @ 2A, 10V

150°C

Through Hole

TP

TO-251-3 Short Leads, IPak, TO-251AA

ISC035N10NM5LF2ATMA1

Infineon Technologies

ISC035N10NM5LF2ATMA1 MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

패키지: -

Request a Quote

MOSFET (Metal Oxide)

100 V

19A (Ta), 164A (Tc)

10V

3.9V @ 115µA

88 nC @ 10 V

7200 pF @ 50 V

±20V

-

3W (Ta), 217W (Tc)

3.5mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

CDM7-650-TR13-PBFREE

Central Semiconductor Corp

MOSFET N-CH 650V 7A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 25 V
Vgs (Max): 30V
FET Feature: -
Power Dissipation (Max): 1.12W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

재고6,498

MOSFET (Metal Oxide)

650 V

7A (Ta)

10V

4V @ 250µA

16.8 nC @ 10 V

754 pF @ 25 V

30V

-

1.12W (Ta), 140W (Tc)

1.5Ohm @ 3.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

DPAK

TO-252-3, DPAK (2 Leads + Tab), SC-63

FSS134A-TL-E

onsemi

PCH 4V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

BUK7M11-40HX

Nexperia USA Inc.

MOSFET N-CH 40V 35A LFPAK33

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 25 V
Vgs (Max): +20V, -10V
FET Feature: -
Power Dissipation (Max): 50W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK33
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

패키지: -

재고11,277

MOSFET (Metal Oxide)

40 V

35A (Ta)

10V

3.6V @ 1mA

16 nC @ 10 V

1022 pF @ 25 V

+20V, -10V

-

50W (Ta)

11mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

LFPAK33

SOT-1210, 8-LFPAK33 (5-Lead)

IPL60R160CFD7AUMA1

Infineon Technologies

MOSFET N CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4-1
Package / Case: 4-PowerTSFN

패키지: -

재고9,147

MOSFET (Metal Oxide)

600 V

16A (Tc)

10V

4.5V @ 340µA

31 nC @ 10 V

1330 pF @ 400 V

±20V

-

95W (Tc)

160mOhm @ 6.8A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4-1

4-PowerTSFN

FDD6030BL

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

Request a Quote

MOSFET (Metal Oxide)

30 V

10A (Ta), 42A (Tc)

4.5V, 10V

3V @ 250µA

31 nC @ 10 V

1143 pF @ 15 V

±20V

-

1.6W (Ta), 50W (Tc)

16mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252 (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

MCPF12N65-BP

Micro Commercial Co

MOSFET N-CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 12A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2W
Rds On (Max) @ Id, Vgs: 850mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

패키지: -

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MOSFET (Metal Oxide)

650 V

12A

10V

4V @ 250µA

5 nC @ 10 V

1800 pF @ 25 V

±30V

-

2W

850mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

SQJQ150E-T1_GE3

Vishay Siliconix

AUTOMOTIVE N-CHANNEL 40 V (D-S)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 233A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4643 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: PowerPAK® 8 x 8

패키지: -

재고5,976

MOSFET (Metal Oxide)

40 V

233A (Tc)

10V

3.5V @ 250µA

92 nC @ 10 V

4643 pF @ 25 V

±20V

-

187W (Tc)

1.9mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® 8 x 8

NVMYS021N06CLTWG

onsemi

MOSFET N-CH 60V 9.8A/27A 4LFPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 16µA
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK4 (5x6)
Package / Case: SOT-1023, 4-LFPAK

패키지: -

재고9,000

MOSFET (Metal Oxide)

60 V

9.8A (Ta), 27A (Tc)

4.5V, 10V

2V @ 16µA

5 nC @ 10 V

410 pF @ 25 V

±20V

-

3.8W (Ta), 28W (Tc)

21mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

LFPAK4 (5x6)

SOT-1023, 4-LFPAK

SI2316BDS-T1-BE3

Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: -

재고32,670

MOSFET (Metal Oxide)

30 V

3.9A (Ta), 4.5A (Tc)

4.5V, 10V

3V @ 250µA

9.6 nC @ 10 V

350 pF @ 15 V

±20V

-

1.25W (Ta), 1.66W (Tc)

50mOhm @ 3.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 (TO-236)

TO-236-3, SC-59, SOT-23-3

IXFX1985

IXYS

MOSFET N-CH 19A PLUS247-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

SSU1N60BTU-WS

onsemi

MOSFET N-CH 600V 900MA IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK
Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA

패키지: -

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MOSFET (Metal Oxide)

600 V

900mA (Tc)

10V

4V @ 250µA

7.7 nC @ 10 V

215 pF @ 25 V

±30V

-

2.5W (Ta), 28W (Tc)

12Ohm @ 450mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

IPAK

TO-251-3 Short Leads, IPAK, TO-251AA

MRH25N12U3SR

Microchip Technology

RH MOSFET 250V U3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U3 (SMD-0.5)
Package / Case: 3-SMD, No Lead

패키지: -

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MOSFET (Metal Oxide)

250 V

12.4A (Tc)

12V

4V @ 1mA

50 nC @ 12 V

1980 pF @ 25 V

±20V

-

75W (Tc)

210mOhm @ 7.8A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

U3 (SMD-0.5)

3-SMD, No Lead

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFH1837	IXYS	MOSFET N-CH TO-247AD FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고4,224	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQPF9N50T	Fairchild/ON Semiconductor	MOSFET N-CH 500V 5.3A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 730 mOhm @ 2.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	패키지: TO-220-3 Full Pack	재고3,808	MOSFET (Metal Oxide)	500V	5.3A (Tc)	10V	5V @ 250µA	36nC @ 10V	1450pF @ 25V	±30V	-	50W (Tc)	730 mOhm @ 2.65A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQU7P06TU	Fairchild/ON Semiconductor	MOSFET P-CH 60V 5.4A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 451 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고7,344	MOSFET (Metal Oxide)	60V	5.4A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	295pF @ 25V	±25V	-	2.5W (Ta), 28W (Tc)	451 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDR844P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 10A SSOT-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4951pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-8 Package / Case: 8-SMD, Gull Wing	패키지: 8-SMD, Gull Wing	재고4,304	MOSFET (Metal Oxide)	20V	10A (Ta)	1.8V, 4.5V	1.5V @ 250µA	74nC @ 4.5V	4951pF @ 10V	±8V	-	1.8W (Ta)	11 mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-8	8-SMD, Gull Wing
IPAN70R360P7SXKSA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,216	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTV98N20T	IXYS	MOSFET N-CH 200V 98A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	패키지: TO-220-3, Short Tab	재고6,704	MOSFET (Metal Oxide)	200V	98A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	PLUS220	TO-220-3, Short Tab
EPC2016	EPC	TRANS GAN 100V 11A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고6,448	GaNFET (Gallium Nitride)	100V	11A (Ta)	5V	2.5V @ 3mA	5.2nC @ 5V	520pF @ 50V	+6V, -5V	-	-	16 mOhm @ 11A, 5V	-40°C ~ 125°C (TJ)	Surface Mount	Die	Die
AON7428	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 50A 3X3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3.3x3.3) Package / Case: 8-PowerWDFN	패키지: 8-PowerWDFN	재고8,808	MOSFET (Metal Oxide)	30V	34A (Ta), 50A (Tc)	4.5V, 10V	2.3V @ 250µA	60nC @ 10V	3120pF @ 15V	±20V	-	6.2W (Ta), 83W (Tc)	2.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3.3x3.3)	8-PowerWDFN
STD4NK60Z-1	STMicroelectronics	MOSFET N-CH 600V 4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고223,380	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	510pF @ 25V	±30V	-	70W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STB6N65K3	STMicroelectronics	MOSFET N-CH 650V D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고6,544	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFQ60N25X3	IXYS	MOSFET N-CH 250V 60A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고5,440	MOSFET (Metal Oxide)	250V	60A (Tc)	10V	4.5V @ 1.5mA	50nC @ 10V	3610pF @ 25V	±20V	-	320W (Tc)	23 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
DMP2540UCB9-7	Diodes Incorporated	MOSFET P-CH 25V 4A UWLB1515-9 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V Vgs (Max): -6V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-WLB1515-9 Package / Case: 9-UFBGA, WLBGA	패키지: 9-UFBGA, WLBGA	재고216,000	MOSFET (Metal Oxide)	25V	4A (Ta)	1.8V, 4.5V	1.1V @ 250µA	6nC @ 4.5V	450pF @ 10V	-6V	-	1W (Ta)	40 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-WLB1515-9	9-UFBGA, WLBGA
IRFSL3806PBF	Infineon Technologies	MOSFET N-CH 60V 43A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고19,788	MOSFET (Metal Oxide)	60V	43A (Tc)	10V	4V @ 50µA	30nC @ 10V	1150pF @ 50V	±20V	-	71W (Tc)	15.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
ZXMP6A13FQTA	Diodes Incorporated	MOSFET P-CH 60V 0.9A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 219pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 400 mOhm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고178,656	MOSFET (Metal Oxide)	60V	900mA (Ta)	4.5V, 10V	3V @ 250µA	2.9nC @ 4.5V	219pF @ 30V	±20V	-	625mW (Ta)	400 mOhm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
2SK3978-TL-E	onsemi	2SK3978 - N-CHANNEL SILICON MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	200 V	4A (Ta)	4V, 10V	2.6V @ 1mA	21 nC @ 10 V	950 pF @ 20 V	±20V	-	1W (Ta), 20W (Tc)	550mOhm @ 2A, 10V	150°C	Through Hole	TP	TO-251-3 Short Leads, IPak, TO-251AA
ISC035N10NM5LF2ATMA1	Infineon Technologies	ISC035N10NM5LF2ATMA1 MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 115µA Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 217W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	100 V	19A (Ta), 164A (Tc)	10V	3.9V @ 115µA	88 nC @ 10 V	7200 pF @ 50 V	±20V	-	3W (Ta), 217W (Tc)	3.5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
CDM7-650-TR13-PBFREE	Central Semiconductor Corp	MOSFET N-CH 650V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 25 V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 1.12W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	재고6,498	MOSFET (Metal Oxide)	650 V	7A (Ta)	10V	4V @ 250µA	16.8 nC @ 10 V	754 pF @ 25 V	30V	-	1.12W (Ta), 140W (Tc)	1.5Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
FSS134A-TL-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK7M11-40HX	Nexperia USA Inc.	MOSFET N-CH 40V 35A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 25 V Vgs (Max): +20V, -10V FET Feature: - Power Dissipation (Max): 50W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	패키지: -	재고11,277	MOSFET (Metal Oxide)	40 V	35A (Ta)	10V	3.6V @ 1mA	16 nC @ 10 V	1022 pF @ 25 V	+20V, -10V	-	50W (Ta)	11mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
IPL60R160CFD7AUMA1	Infineon Technologies	MOSFET N CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4-1 Package / Case: 4-PowerTSFN	패키지: -	재고9,147	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	4.5V @ 340µA	31 nC @ 10 V	1330 pF @ 400 V	±20V	-	95W (Tc)	160mOhm @ 6.8A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4-1	4-PowerTSFN
FDD6030BL	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta), 42A (Tc)	4.5V, 10V	3V @ 250µA	31 nC @ 10 V	1143 pF @ 15 V	±20V	-	1.6W (Ta), 50W (Tc)	16mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCPF12N65-BP	Micro Commercial Co	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W Rds On (Max) @ Id, Vgs: 850mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	12A	10V	4V @ 250µA	5 nC @ 10 V	1800 pF @ 25 V	±30V	-	2W	850mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SQJQ150E-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 40 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 233A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4643 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: PowerPAK® 8 x 8	패키지: -	재고5,976	MOSFET (Metal Oxide)	40 V	233A (Tc)	10V	3.5V @ 250µA	92 nC @ 10 V	4643 pF @ 25 V	±20V	-	187W (Tc)	1.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8	PowerPAK® 8 x 8
NVMYS021N06CLTWG	onsemi	MOSFET N-CH 60V 9.8A/27A 4LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 16µA Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) Package / Case: SOT-1023, 4-LFPAK	패키지: -	재고9,000	MOSFET (Metal Oxide)	60 V	9.8A (Ta), 27A (Tc)	4.5V, 10V	2V @ 16µA	5 nC @ 10 V	410 pF @ 25 V	±20V	-	3.8W (Ta), 28W (Tc)	21mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
SI2316BDS-T1-BE3	Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: -	재고32,670	MOSFET (Metal Oxide)	30 V	3.9A (Ta), 4.5A (Tc)	4.5V, 10V	3V @ 250µA	9.6 nC @ 10 V	350 pF @ 15 V	±20V	-	1.25W (Ta), 1.66W (Tc)	50mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IXFX1985	IXYS	MOSFET N-CH 19A PLUS247-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSU1N60BTU-WS	onsemi	MOSFET N-CH 600V 900MA IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	900mA (Tc)	10V	4V @ 250µA	7.7 nC @ 10 V	215 pF @ 25 V	±30V	-	2.5W (Ta), 28W (Tc)	12Ohm @ 450mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
MRH25N12U3SR	Microchip Technology	RH MOSFET 250V U3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U3 (SMD-0.5) Package / Case: 3-SMD, No Lead	패키지: -	Request a Quote	MOSFET (Metal Oxide)	250 V	12.4A (Tc)	12V	4V @ 1mA	50 nC @ 12 V	1980 pF @ 25 V	±20V	-	75W (Tc)	210mOhm @ 7.8A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	U3 (SMD-0.5)	3-SMD, No Lead