페이지 11 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  11/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGS4715DTRRPBF
Infineon Technologies

IGBT 650V D2-PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
  • Power - Max: 100W
  • Switching Energy: 200µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 30ns/100ns
  • Test Condition: 400V, 8A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 86ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,696
650V
21A
24A
2V @ 15V, 8A
100W
200µJ (on), 90µJ (off)
Standard
30nC
30ns/100ns
400V, 8A, 50 Ohm, 15V
86ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRGS4607DTRLPBF
Infineon Technologies

IGBT 600V 11A 58W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
  • Power - Max: 58W
  • Switching Energy: 140µJ (on), 62µJ (off)
  • Input Type: Standard
  • Gate Charge: 9nC
  • Td (on/off) @ 25°C: 27ns/120ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 48ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,864
600V
11A
12A
2.05V @ 15V, 4A
58W
140µJ (on), 62µJ (off)
Standard
9nC
27ns/120ns
400V, 4A, 100 Ohm, 15V
48ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRG6S320UTRLPBF
Infineon Technologies

IGBT 330V 50A 114W D2PAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 24A
  • Power - Max: 114W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 24ns/89ns
  • Test Condition: 196V, 12A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고860,748
330V
50A
-
1.65V @ 15V, 24A
114W
-
Standard
46nC
24ns/89ns
196V, 12A, 10 Ohm
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRG4PC30KD
Infineon Technologies

IGBT 600V 28A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 58A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고6,552
600V
28A
58A
2.7V @ 15V, 16A
100W
600µJ (on), 580µJ (off)
Standard
67nC
60ns/160ns
480V, 16A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
RJH60F5DPQ-A0#T0
Renesas Electronics America

IGBT 600V 80A 260.4W TO247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 260.4W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 53ns/105ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
패키지: TO-247-3
재고3,824
600V
80A
-
1.8V @ 15V, 40A
260.4W
-
Standard
-
53ns/105ns
400V, 30A, 5 Ohm, 15V
90ns
150°C (TJ)
Through Hole
TO-247-3
TO-247A
IXGH32N60B
IXYS

IGBT 600V 60A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
  • Power - Max: 200W
  • Switching Energy: 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 125nC
  • Td (on/off) @ 25°C: 25ns/100ns
  • Test Condition: 480V, 32A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고7,024
600V
60A
120A
2.5V @ 15V, 32A
200W
800µJ (off)
Standard
125nC
25ns/100ns
480V, 32A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IGW60N60H3FKSA1
Infineon Technologies

IGBT 600V TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 416W
  • Switching Energy: 2.1mJ (on), 1.13mJ (off)
  • Input Type: Standard
  • Gate Charge: 375nC
  • Td (on/off) @ 25°C: 27ns/252ns
  • Test Condition: 400V, 60A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고4,768
600V
80A
180A
2.3V @ 15V, 60A
416W
2.1mJ (on), 1.13mJ (off)
Standard
375nC
27ns/252ns
400V, 60A, 6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXGH24N170AH1
IXYS

IGBT 1700V 24A 250W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
  • Power - Max: 250W
  • Switching Energy: 2.97mJ (on), 790µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 21ns/336ns
  • Test Condition: 850V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고5,424
1700V
24A
75A
6V @ 15V, 16A
250W
2.97mJ (on), 790µJ (off)
Standard
140nC
21ns/336ns
850V, 24A, 10 Ohm, 15V
200ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
GPI040A060MN-FD
Global Power Technologies Group

IGBT 600V 80A 231W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 231W
  • Switching Energy: 1.46mJ (on), 540µJ (off)
  • Input Type: Standard
  • Gate Charge: 173nC
  • Td (on/off) @ 25°C: 35ns/85ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3PN
패키지: TO-3
재고2,272
600V
80A
120A
2.3V @ 15V, 40A
231W
1.46mJ (on), 540µJ (off)
Standard
173nC
35ns/85ns
400V, 40A, 5 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-3PN
hot FGA20S140P
Fairchild/ON Semiconductor

IGBT 1400V 40A 272W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1400V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 272W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 203.5nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고103,824
1400V
40A
60A
2.4V @ 15V, 20A
272W
-
Standard
203.5nC
-
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot NGTB15N60S1EG
ON Semiconductor

IGBT 600V 30A 117W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
  • Power - Max: 117W
  • Switching Energy: 550µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 88nC
  • Td (on/off) @ 25°C: 65ns/170ns
  • Test Condition: 400V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 270ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고5,216
600V
30A
120A
1.7V @ 15V, 15A
117W
550µJ (on), 350µJ (off)
Standard
88nC
65ns/170ns
400V, 15A, 22 Ohm, 15V
270ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
STGB30H60DFB
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, HB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 260W
  • Switching Energy: 383µJ (on), 293µJ (off)
  • Input Type: Standard
  • Gate Charge: 149nC
  • Td (on/off) @ 25°C: 37ns/146ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 53ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,800
600V
60A
120A
2V @ 15V, 30A
260W
383µJ (on), 293µJ (off)
Standard
149nC
37ns/146ns
400V, 30A, 10 Ohm, 15V
53ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
FGH75T65SHD_F155
Fairchild/ON Semiconductor

IGBT 650V 150A 455W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 455W
  • Switching Energy: 2.4mJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 123nC
  • Td (on/off) @ 25°C: 28ns/80ns
  • Test Condition: 400V, 75A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 43.4ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: TO-247-3
재고5,536
650V
150A
225A
2.1V @ 15V, 75A
455W
2.4mJ (on), 720µJ (off)
Standard
123nC
28ns/80ns
400V, 75A, 3 Ohm, 15V
43.4ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
AOKS40B60D1
Alpha & Omega Semiconductor Inc.

IGBT 600V 40A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 278W
  • Switching Energy: 1.55mJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 29ns/74ns
  • Test Condition: 400V, 40A, 7.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,056
600V
80A
140A
2.4V @ 15V, 40A
278W
1.55mJ (on), 300µJ (off)
Standard
45nC
29ns/74ns
400V, 40A, 7.5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
STGP6M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 88W
  • Switching Energy: 40µJ (on), 136µJ (off)
  • Input Type: Standard
  • Gate Charge: 21.2nC
  • Td (on/off) @ 25°C: 12ns/86ns
  • Test Condition: 400V, 6A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고21,726
650V
12A
24A
2V @ 15V, 6A
88W
40µJ (on), 136µJ (off)
Standard
21.2nC
12ns/86ns
400V, 6A, 22 Ohm, 15V
140ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
FGY75N60SMD
Fairchild/ON Semiconductor

IGBT 600V 150A 750W POWER-247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
  • Power - Max: 750W
  • Switching Energy: 2.3mJ (on), 770µJ (off)
  • Input Type: Standard
  • Gate Charge: 248nC
  • Td (on/off) @ 25°C: 24ns/136ns
  • Test Condition: 400V, 75A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Exposed Pad
  • Supplier Device Package: PowerTO-247-3
패키지: TO-247-3 Exposed Pad
재고16,296
600V
150A
225A
2.5V @ 15V, 75A
750W
2.3mJ (on), 770µJ (off)
Standard
248nC
24ns/136ns
400V, 75A, 3 Ohm, 15V
55ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Exposed Pad
PowerTO-247-3
IGW25N120H3
Infineon Technologies

IGBT 1200V 50A 326W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 326W
  • Switching Energy: 2.65mJ
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 27ns/277ns
  • Test Condition: 600V, 25A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고55,902
1200V
50A
100A
2.4V @ 15V, 25A
326W
2.65mJ
Standard
115nC
27ns/277ns
600V, 25A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
HGT1S12N60B3D
Harris Corporation

27A, 600V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 27 A
  • Current - Collector Pulsed (Icm): 110 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 104 W
  • Switching Energy: 304µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 78 nC
  • Td (on/off) @ 25°C: 26ns/150ns
  • Test Condition: 480V, 12A, 25Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: I2PAK (TO-262)
패키지: -
Request a Quote
600 V
27 A
110 A
2.1V @ 15V, 12A
104 W
304µJ (on), 250µJ (off)
Standard
78 nC
26ns/150ns
480V, 12A, 25Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
I2PAK (TO-262)
RGT50NS65DGTL
Rohm Semiconductor

IGBT TRENCH FIELD 650V 48A LPDS

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 48 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 194 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49 nC
  • Td (on/off) @ 25°C: 27ns/88ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
패키지: -
재고3,000
650 V
48 A
75 A
2.1V @ 15V, 25A
194 W
-
Standard
49 nC
27ns/88ns
400V, 25A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
RGCL80TK60DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 600V 35A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 35 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 57 W
  • Switching Energy: 1.11mJ (on), 1.68mJ (off)
  • Input Type: Standard
  • Gate Charge: 98 nC
  • Td (on/off) @ 25°C: 53ns/227ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: -
재고1,299
600 V
35 A
160 A
1.8V @ 15V, 40A
57 W
1.11mJ (on), 1.68mJ (off)
Standard
98 nC
53ns/227ns
400V, 40A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
RGW80TS65DHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 80A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 214 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 42ns/148ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,350
650 V
80 A
160 A
1.9V @ 15V, 40A
214 W
-
Standard
110 nC
42ns/148ns
400V, 20A, 10Ohm, 15V
92 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RJP30H1DPP-MZ-T2
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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RGW60TS65CHRC11
Rohm Semiconductor

IGBT 650V 64A TO247N

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 64 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 178 W
  • Switching Energy: 70µJ (on), 220µJ (off)
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 37ns/91ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 34 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,275
650 V
64 A
120 A
1.9V @ 15V, 30A
178 W
70µJ (on), 220µJ (off)
Standard
84 nC
37ns/91ns
400V, 15A, 10Ohm, 15V
34 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
STGF30H65DFB2
STMicroelectronics

DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 50 W
  • Switching Energy: 270µJ (on), 310µJ (off)
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 18.4ns/71ns
  • Test Condition: 400V, 30A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): 115 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
패키지: -
Request a Quote
650 V
50 A
90 A
2.1V @ 15V, 30A
50 W
270µJ (on), 310µJ (off)
Standard
90 nC
18.4ns/71ns
400V, 30A, 6.8Ohm, 15V
115 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
IKY150N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 160A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 160 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
  • Power - Max: 621 W
  • Switching Energy: 2.3mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 300 nC
  • Td (on/off) @ 25°C: 44ns/343ns
  • Test Condition: 400V, 150A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 65 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-2
패키지: -
재고624
650 V
160 A
600 A
1.65V @ 15V, 150A
621 W
2.3mJ (on), 2.9mJ (off)
Standard
300 nC
44ns/343ns
400V, 150A, 10Ohm, 15V
65 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-2
SIGC08T60EX1SA1
Infineon Technologies

IGBT TRENCH FS 600V 15A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
15 A
45 A
1.9V @ 15V, 15A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
HGT1S20N60B3S
Harris Corporation

40A, 600V, UFS N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: -
Request a Quote
600 V
40 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IGC03T60TEX7SA2
Infineon Technologies

IGBT 600V 3A WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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